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Sina Najmaei publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Sina Najmaei sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

The last bar groups every scientist with 1,163 publications or more.

Sina Najmaei D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Sina Najmaei sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

The last bar groups every scientist with 165 D-Index or more.

Overview

Sina Najmaei is affiliated with the United States Army Research Laboratory in the United States. Their research primarily focuses on engineering and materials science, with particular emphasis on electrical and electronic engineering and materials chemistry as subfields.

Their scientific work centers around several key topics:

  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • MXene and MAX Phase Materials
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices

Najmaei has contributed to a number of recent publications. Notable papers include:

  • "Observation of Multi-Phonon Emission in Monolayer WS2 on Various Substrates" (2023), published in Nanomaterials
  • "Monolithic Integration and Ferroelectric Phase Evolution of Hafnium Zirconium Oxide in 2d Neuromorphic Synaptic Devices" (2023), published in SSRN Electronic Journal

Collaborations have involved frequent coauthors such as Eli R. Adler, Thy Doan Mai Le, Ibrahim Boulares, Robert K. Boyd, and Yangchen He.

Najmaei's work has appeared predominantly in the venues Nanomaterials and SSRN Electronic Journal, reflecting their research interests in emerging materials and electronic device technologies.

Best Publications

  • Intrinsic Structural Defects in Monolayer Molybdenum Disulfide

    Wu Zhou;Xiaolong Zou;Sina Najmaei;Zheng Liu

  • Large-area vapor-phase growth and characterization of MoS(2) atomic layers on a SiO(2) substrate.

    Yongjie Zhan;Zheng Liu;Sina Najmaei;Pulickel M. Ajayan

  • Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers

    Sina Najmaei;Zheng Liu;Wu Zhou;Wu Zhou;Xiaolong Zou

  • Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

    Sina Najmaei;Zheng Liu;Wu Zhou;Xiaolong Zou

  • Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode

    Yexin Deng;Zhe Luo;Nathan J. Conrad;Han Liu

  • Second harmonic microscopy of monolayer MoS 2

    Nardeep Kumar;Sina Najmaei;Qiannan Cui;Frank Ceballos

  • Evolution of the Electronic Band Structure and Efficient Photo-Detection in Atomic Layers of InSe

    Sidong Lei;Liehui Ge;Sina Najmaei;Antony George

  • Plasmonic Hot Electron Induced Structural Phase Transition in a MoS2 Monolayer

    Yimin Kang;Sina Najmaei;Zheng Liu;Yanjun Bao

  • Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition.

    Zheng Liu;Matin Amani;Sina Najmaei;Quan Xu

  • Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide.

    Yongji Gong;Zheng Liu;Zheng Liu;Andrew R. Lupini;Gang Shi

  • Synthesis and Photoresponse of Large GaSe Atomic Layers

    Sidong Lei;Liehui Ge;Zheng Liu;Sina Najmaei

  • Facile Synthesis of Single Crystal Vanadium Disulfide Nanosheets by Chemical Vapor Deposition for Efficient Hydrogen Evolution Reaction

    Jiangtan Yuan;Jingjie Wu;Will J. Hardy;Philip Loya

  • An Atomically Layered InSe Avalanche Photodetector

    Sidong Lei;Fangfang Wen;Liehui Ge;Sina Najmaei

  • Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.

    Han Liu;Mengwei Si;Yexin Deng;Adam T. Neal

  • Thermal effects on the characteristic Raman spectrum of molybdenum disulfide (MoS2) of varying thicknesses

    S. Najmaei;Z. Liu;P. M. Ajayan;J. Lou

  • Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

    Matin Amani;Matthew L. Chin;A. Glen Birdwell;Terrance P. O’Regan

  • Temperature-dependent phonon shifts in monolayer MoS2

    Nicholas A. Lanzillo;A. Glen Birdwell;Matin Amani;Frank J. Crowne

  • Optoelectronic devices based on two-dimensional transition metal dichalcogenides

    He Tian;Matthew L. Chin;Sina Najmaei;Qiushi Guo

  • Enhancing the photocurrent and photoluminescence of single crystal monolayer MoS2 with resonant plasmonic nanoshells

    Ali Sobhani;Adam Lauchner;Sina Najmaei;Ciceron Ayala-Orozco

  • Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

    Yongjie Zhan;Zheng Liu;Sina Najmaei;Pulickel M. Ajayan

Frequent Co-Authors

Jun Lou
Jun Lou Rice University
Pulickel M. Ajayan
Pulickel M. Ajayan Rice University
Madan Dubey
Madan Dubey United States Army Research Laboratory
Zheng Liu
Zheng Liu Nanyang Technological University
Boris I. Yakobson
Boris I. Yakobson Rice University
Robert Vajtai
Robert Vajtai Rice University
Wu Zhou
Wu Zhou University of Chinese Academy of Sciences
Aditya D. Mohite
Aditya D. Mohite Rice University
Peide D. Ye
Peide D. Ye Purdue University West Lafayette
Xiaolong Zou
Xiaolong Zou Tsinghua University

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