World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
83
Citations
25968
World Ranking
2356
National Ranking
682

Jamie H. Warner publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jamie H. Warner sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 379 publications — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Jamie H. Warner D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jamie H. Warner sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 83 D-Index — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Jamie H. Warner is affiliated with The University of Texas at Austin in the United States. Their research primarily focuses on materials science and engineering, with a substantial output in subfields such as materials chemistry, electrical and electronic engineering, biomedical engineering, renewable energy, sustainability and the environment, and atomic and molecular physics and optics.

The topics covered in their work include 2D materials and applications, graphene research and applications, MXene and MAX phase materials, perovskite materials and applications, advanced memory and neural computing, advancements in battery materials, and electrocatalysts for energy conversion.

Recent published work by Jamie H. Warner includes the following papers:

  • Beyond Ti-based MXenes: A review of emerging non-Ti based metal-MXene structure, properties, and applications, 2023, Materials Today
  • In-Depth Analysis of the Degradation Mechanisms of High-Nickel, Low/No-Cobalt Layered Oxide Cathodes for Lithium-Ion Batteries, 2021, Advanced Energy Materials
  • Unraveling the Intricacies of Residual Lithium in High-Ni Cathodes for Lithium-Ion Batteries, 2021, ACS Energy Letters
  • Ultra-fast switching memristors based on two-dimensional materials, 2024, Nature Communications
  • 2D layered noble metal dichalcogenides (Pt, Pd, Se, S) for electronics and energy applications, 2020, Materials Today Advances

Their frequent co-authors include:

  • Hyoju Park
  • Matthew Coupin
  • Kevin C. Matthews
  • Yang Lu
  • Yi Wen

Jamie H. Warner's publications frequently appear in the following venues:

  • ACS Nano
  • ACS Applied Materials & Interfaces
  • Nano Letters
  • Advanced Materials
  • Chemistry of Materials

Best Publications

  • Shape Evolution of Monolayer MoS2 Crystals Grown by Chemical Vapor Deposition

    Shanshan Wang;Youmin Rong;Ye Fan;Mercè Pacios

  • MoS2 monolayer catalyst doped with isolated Co atoms for the hydrodeoxygenation reaction

    Guoliang Liu;Alex W. Robertson;Molly Meng Jung Li;Winson C.H. Kuo

  • Broadband transparent optical phase change materials for high-performance nonvolatile photonics.

    Yifei Zhang;Jeffrey B. Chou;Junying Li;Huashan Li

  • Water‐Soluble Photoluminescent Silicon Quantum Dots

    Jamie H. Warner;Akiyoshi Hoshino;Kenji Yamamoto;Richard. D. Tilley

  • Extreme Broadband Transparent Optical Phase Change Materials for High-Performance Nonvolatile Photonics

    Yifei Zhang;Jeffrey B. Chou;Junying Li;Huashan Li

  • Superparamagnetic Fe3O4 nanocrystals@graphene composites for energy storage devices

    Baojun Li;Huaqiang Cao;Jin Shao;Meizhen Qu

  • Atomic resolution imaging and topography of boron nitride sheets produced by chemical exfoliation.

    Jamie H. Warner;Mark H. Rümmeli;Alicja Bachmatiuk;Bernd Büchner

  • Dislocation-driven deformations in graphene.

    Jamie H. Warner;Elena Roxana Margine;Masaki Mukai;Alexander W. Robertson

  • All Chemical Vapor Deposition Growth of MoS2:h-BN Vertical van der Waals Heterostructures

    Shanshan Wang;Xiaochen Wang;Jamie H Warner

  • Spatial control of defect creation in graphene at the nanoscale

    Alex W. Robertson;Christopher S. Allen;Yimin A. Wu;Kuang He

  • Direct Low-Temperature Nanographene CVD Synthesis over a Dielectric Insulator

    Mark H. Rümmeli;Alicja Bachmatiuk;Andrew Scott;Felix Börrnert

  • Hexagonal single crystal domains of few-layer graphene on copper foils.

    Alex W. Robertson;Jamie H. Warner

  • Graphene: Fundamentals and emergent applications

    Jamie H. Warner;Franziska Schäffel;Alicja Bachmatiuk;Mark H. Rümmeli

  • Ultrathin 2D Photodetectors Utilizing Chemical Vapor Deposition Grown WS2 With Graphene Electrodes

    Haijie Tan;Ye Fan;Yingqiu Zhou;Qu Chen

  • Large single crystals of graphene on melted copper using chemical vapour deposition

    Yimin A. Wu;Susannah Speller;Graham Creeth;Jurek Sadowski

  • Direct imaging of rotational stacking faults in few layer graphene.

    Jamie H Warner;Mark H Rümmeli;Thomas Gemming;Bernd Büchner

  • Atomic Structure and Dynamics of Metal Dopant Pairs in Graphene

    Zhengyu He;Kuang He;Alex W. Robertson;Angus I. Kirkland

  • Structural transformations in graphene studied with high spatial and temporal resolution

    Jamie H. Warner;Mark H. Rümmeli;Ling Ge;Thomas Gemming

  • Dynamics of single Fe atoms in graphene vacancies.

    Alex W. Robertson;Barbara Montanari;Kuang He;Judy Kim

  • Atomic structure of defects and dopants in 2D layered transition metal dichalcogenides.

    Shanshan Wang;Alex Robertson;Jamie H Warner

  • Shape Evolution of Monolayer MoS 2 Crystals Grown by Chemical Vapor Deposition

    Shanshan Wang;Youmin Rong;Harish Bhaskaran;Jamie H. Warner

  • Direct Low-Temperature Nanographene CVD Synthesis over a Dielectric

    Alicja Bachmatiuk;Andrew Scott;Jamie H. Warner;Volker Hoffman

Frequent Co-Authors

Alex W. Robertson
Alex W. Robertson University of Oxford
Angus I. Kirkland
Angus I. Kirkland University of Oxford
Mark H. Rümmeli
Mark H. Rümmeli Soochow University
Alicja Bachmatiuk
Alicja Bachmatiuk Wrocław University of Science and Technology
Bernd Büchner
Bernd Büchner Leibniz Institute for Solid State and Materials Research
Harish Bhaskaran
Harish Bhaskaran University of Oxford
Hisanori Shinohara
Hisanori Shinohara Nagoya University
Jun Luo
Jun Luo Nanyang Technological University
Richard D. Tilley
Richard D. Tilley University of New South Wales

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