World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
84
Citations
35364
World Ranking
402
National Ranking
190

Muhammad A. Alam publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Muhammad A. Alam sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 688 publications — 94th percentile

94% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Muhammad A. Alam D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Muhammad A. Alam sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 84 D-Index — 94th percentile

94% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Muhammad A. Alam is affiliated with Purdue University West Lafayette in the United States. Their research primarily spans the field of Engineering, with a focus on Electrical and Electronic Engineering, Materials Chemistry, Renewable Energy, Sustainability and the Environment, Biomedical Engineering, and Artificial Intelligence.

The scientist's work includes notable publications in various high-impact scientific journals and conferences. Their recent papers feature:

  • Two-dimensional perovskite templates for durable, efficient formamidinium perovskite solar cells, 2024, Science
  • Deterministic fabrication of 3D/2D perovskite bilayer stacks for durable and efficient solar cells, 2022, Science
  • Moore's law: The journey ahead, 2022, Science
  • Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry, 2021, Nature Communications
  • Light-activated interlayer contraction in two-dimensional perovskites for high-efficiency solar cells, 2021, Nature Nanotechnology

Their frequent coauthors include Marco Fratus, Reza Asadpour, Nauman Zafar Butt, M. Ryyan Khan, and Ajanta Saha. This indicates ongoing collaborations with experts across related disciplines.

Muhammad A. Alam has published extensively in recognized venues such as IEEE Transactions on Electron Devices, IEEE Journal of Photovoltaics, arXiv (Cornell University), Applied Physics Letters, and IEEE Sensors Journal. These publication venues reinforce their active involvement in semiconductor device research and photovoltaic technology.

Their main areas of research topics cover:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Solar cell performance optimization
  • Analytical Chemistry and Sensors
  • Photovoltaic Systems and Sustainability
  • Photovoltaic System Optimization Techniques
  • Solar Thermal and Photovoltaic Systems

Muhammad A. Alam has contributed to the literature with a book titled Principles of Solar Cells, published by World Scientific in 2020.

Best Publications

  • High-efficiency solution-processed perovskite solar cells with millimeter-scale grains

    Wanyi Nie;Hsinhan Tsai;Reza Asadpour;Jean Christophe Blancon

  • High-efficiency two-dimensional Ruddlesden–Popper perovskite solar cells

    Hsinhan Tsai;Hsinhan Tsai;Wanyi Nie;Jean Christophe Blancon;Constantinos C. Stoumpos

  • High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes

    Seong Jun Kang;Coskun Kocabas;Taner Ozel;Moonsub Shim

  • Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates

    John A. Rogers;Qing Cao;Muhammad Alam;Ninad Pimparkar

  • A comprehensive model of PMOS NBTI degradation

    Muhammad Ashraful Alam;S. Mahapatra

  • Light-activated photocurrent degradation and self-healing in perovskite solar cells

    Wanyi Nie;Jean Christophe Blancon;Amanda J. Neukirch;Kannatassen Appavoo

  • Steep-slope hysteresis-free negative capacitance MoS 2 transistors

    Mengwei Si;Chun-Jung Su;Chunsheng Jiang;Chunsheng Jiang;Nathan J. Conrad

  • Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates

    Qing Cao;Hoon-sik Kim;Ninad Pimparkar;Jaydeep P. Kulkarni

  • DNA-mediated fluctuations in ionic current through silicon oxide nanopore channels

    H. Chang;F. Kosari;G. Andreadakis;M. A. Alam

  • A critical examination of the mechanics of dynamic NBTI for PMOSFETs

    M.A. Alam

  • Macroelectronics: Perspectives on Technology and Applications

    R.H. Reuss;B.R. Chalamala;A. Moussessian;M.G. Kane

  • Performance limits of nanobiosensors

    P. R. Nair;M. A. Alam

  • Design Considerations of Silicon Nanowire Biosensors

    P.R. Nair;M.A. Alam

  • A comprehensive model for PMOS NBTI degradation: Recent progress.

    Muhammad Ashraful Alam;Haldun Kufluoglu;D. Varghese;D. Varghese;S. Mahapatra

  • Impact of NBTI on the temporal performance degradation of digital circuits

    B.C. Paul;Kunhyuk Kang;H. Kufluoglu;M.A. Alam

  • Optimization and performance of bifacial solar modules: A global perspective

    Xingshu Sun;Mohammad Ryyan Khan;Chris Deline;Muhammad Ashraful Alam

  • Two-dimensional Layered MoS2 Biosensors Enable Highly Sensitive Detection of Biomolecules

    Joonhyung Lee;Piyush Dak;Yeonsung Lee;Heekyeong Park

  • Experimental and Theoretical Studies of Transport through Large Scale, Partially Aligned Arrays of Single-Walled Carbon Nanotubes in Thin Film Type Transistors

    C. Kocabas;N. Pimparkar;O. Yesilyurt;S. J. Kang

  • Percolating Conduction in Finite Nanotube Networks

    S. Kumar;Jayathi Murthy;M. A. Alam

  • A Comparative Study of Different Physics-Based NBTI Models

    S. Mahapatra;N. Goel;S. Desai;S. Gupta

  • Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation

    A.E. Islam;H. Kufluoglu;D. Varghese;S. Mahapatra

Frequent Co-Authors

Mark Lundstrom
Mark Lundstrom Purdue University West Lafayette
Souvik Mahapatra
Souvik Mahapatra Indian Institute of Technology Bombay
John A. Rogers
John A. Rogers Northwestern University
Hsinhan Tsai
Hsinhan Tsai University of California, Berkeley
Aditya D. Mohite
Aditya D. Mohite Rice University
Peide D. Ye
Peide D. Ye Purdue University West Lafayette
Jayathi Y. Murthy
Jayathi Y. Murthy Oregon State University
B. E. Weir
B. E. Weir Broadcom (United States)
Wanyi Nie
Wanyi Nie Los Alamos National Laboratory
Rashid Bashir
Rashid Bashir University of Illinois at Urbana-Champaign

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