The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ben Kaczer sits on this spectrum.
This scientist: 672 publications — 93rd percentile
93% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ben Kaczer sits on this spectrum.
This scientist: 65 D-Index — 83rd percentile
83% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Ben Kaczer is affiliated with Imec in Belgium and has contributed extensively to the field of engineering, particularly within electrical and electronic engineering. Their research primarily focuses on semiconductor materials and devices, with specific interest in advancements in semiconductor devices and circuit design, integrated circuits and semiconductor failure analysis, and ferroelectric and negative capacitance devices.
Their scientific work spans various subfields including materials chemistry, atomic and molecular physics, optics, electronic, optical and magnetic materials, and artificial intelligence. These diverse interests highlight a multidisciplinary approach to research centered on semiconductor technologies and related physical phenomena.
Ben Kaczer's frequent co-authors include J. Franco, Alexander Grill, E. Bury, R. Degraeve, and Stanislav Tyaginov.
The scientist has published numerous papers over the years, with selected recent publications including:
Ben Kaczer has frequently published in the following venues:
The main research topics addressed by Ben Kaczer include:
This body of work demonstrates a sustained engagement with both fundamental and applied aspects of semiconductor technology, highlighting key areas such as device reliability, noise phenomena at cryogenic temperatures, and new circuit integration concepts. Their publications contribute to a broad understanding of electronic device performance and material behavior within advanced semiconductor processes.
T. Grasser;B. Kaczer;W. Goes;H. Reisinger
B. Kaczer;T. Grasser;Ph. J. Roussel;J. Franco
T. Grasser;H. Reisinger;P.-J. Wagner;F. Schanovsky
J. A. Kittl;K. Opsomer;M. Popovici;N. Menou
B. Kaczer;T. Grasser;P.J. Roussel;J. Martin-Martinez
T. Grasser;B. Kaczer;W. Goes;Th. Aichinger
B. Kaczer;R. Degraeve;G. Groeseneken;M. Rasras
B. Kaczer;R. Degraeve;A. De Keersgieter;K. Van de Mieroop
Robin Degraeve;Ben Kaczer;Guido Groeseneken
B. Kaczer;V. Arkhipov;R. Degraeve;N. Collaert
T. Grasser;P.-J. Wagner;H. Reisinger;Th. Aichinger
T. Grasser;W. Gos;V. Sverdlov;B. Kaczer
Gerhard Rzepa;Jacopo Franco;Barry J. O'Sullivan;A. Subirats
Tibor Grasser;Hans Reisinger;Paul-Jürgen Wagner;Ben Kaczer
G. Gielen;P. De Wit;E. Maricau;J. Loeckx
B. Kaczer;S. Mahato;V. Valduga de Almeida Camargo;M. Toledano-Luque
R. Fernandez;B. Kaczer;A. Nackaerts;S. Demuynck
T. Grasser;B. Kaczer;P. Hehenberger;W. Gos
P. Zimmerman;G. Nicholas;B. De Jaeger;B. Kaczer
T. Grasser;H. Reisinger;W. Goes;Th. Aichinger
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