World's Best Scientists 2026 revealed!
Ben Kaczer

Ben Kaczer

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
65
Citations
17007
World Ranking
1208
National Ranking
28

Materials Science

D-Index
65
Citations
17163
World Ranking
5570
National Ranking
53

Overview

Ben Kaczer is affiliated with Imec in Belgium and has contributed extensively to the field of engineering, particularly within electrical and electronic engineering. Their research primarily focuses on semiconductor materials and devices, with specific interest in advancements in semiconductor devices and circuit design, integrated circuits and semiconductor failure analysis, and ferroelectric and negative capacitance devices.

Their scientific work spans various subfields including materials chemistry, atomic and molecular physics, optics, electronic, optical and magnetic materials, and artificial intelligence. These diverse interests highlight a multidisciplinary approach to research centered on semiconductor technologies and related physical phenomena.

Ben Kaczer's frequent co-authors include J. Franco, Alexander Grill, E. Bury, R. Degraeve, and Stanislav Tyaginov.

The scientist has published numerous papers over the years, with selected recent publications including:

  • Understanding and modelling the PBTI reliability of thin-film IGZO transistors, 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?, 2022, Advanced Materials
  • Investigation of Imprint in FE-HfO₂ and Its Recovery, 2020, IEEE Transactions on Electron Devices
  • Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures, 2023, IEEE Transactions on Electron Devices
  • Defect profiling in FEFET Si:HfO2 layers, 2020, Applied Physics Letters

Ben Kaczer has frequently published in the following venues:

  • IEEE Transactions on Electron Devices
  • 2022 IEEE International Reliability Physics Symposium (IRPS)
  • Solid-State Electronics
  • IEEE Electron Device Letters
  • Micromachines

The main research topics addressed by Ben Kaczer include:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Integrated Circuits and Semiconductor Failure Analysis
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Silicon Carbide Semiconductor Technologies
  • Quantum and electron transport phenomena

This body of work demonstrates a sustained engagement with both fundamental and applied aspects of semiconductor technology, highlighting key areas such as device reliability, noise phenomena at cryogenic temperatures, and new circuit integration concepts. Their publications contribute to a broad understanding of electronic device performance and material behavior within advanced semiconductor processes.

Best Publications

  • The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

    T. Grasser;B. Kaczer;W. Goes;H. Reisinger

  • Origin of NBTI variability in deeply scaled pFETs

    B. Kaczer;T. Grasser;Ph. J. Roussel;J. Franco

  • The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

    T. Grasser;H. Reisinger;P.-J. Wagner;F. Schanovsky

  • High-k dielectrics for future generation memory devices (Invited Paper)

    J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  • Ubiquitous relaxation in BTI stressing—New evaluation and insights

    B. Kaczer;T. Grasser;P.J. Roussel;J. Martin-Martinez

  • A two-stage model for negative bias temperature instability

    T. Grasser;B. Kaczer;W. Goes;Th. Aichinger

  • Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

    B. Kaczer;R. Degraeve;G. Groeseneken;M. Rasras

  • Consistent model for short-channel nMOSFET after hard gate oxide breakdown

    B. Kaczer;R. Degraeve;A. De Keersgieter;K. Van de Mieroop

  • Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction

    Robin Degraeve;Ben Kaczer;Guido Groeseneken

  • Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification

    B. Kaczer;V. Arkhipov;R. Degraeve;N. Collaert

  • Analytic modeling of the bias temperature instability using capture/emission time maps

    T. Grasser;P.-J. Wagner;H. Reisinger;Th. Aichinger

  • The Universality of NBTI Relaxation and its Implications for Modeling and Characterization

    T. Grasser;W. Gos;V. Sverdlov;B. Kaczer

  • Comphy — A compact-physics framework for unified modeling of BTI

    Gerhard Rzepa;Jacopo Franco;Barry J. O'Sullivan;A. Subirats

  • Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors

    Tibor Grasser;Hans Reisinger;Paul-Jürgen Wagner;Ben Kaczer

  • Emerging yield and reliability challenges in nanometer CMOS technologies

    G. Gielen;P. De Wit;E. Maricau;J. Loeckx

  • Atomistic approach to variability of bias-temperature instability in circuit simulations

    B. Kaczer;S. Mahato;V. Valduga de Almeida Camargo;M. Toledano-Luque

  • AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits

    R. Fernandez;B. Kaczer;A. Nackaerts;S. Demuynck

  • Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability

    T. Grasser;B. Kaczer;P. Hehenberger;W. Gos

  • High performance Ge pMOS devices using a Si-compatible process flow

    P. Zimmerman;G. Nicholas;B. De Jaeger;B. Kaczer

  • Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise

    T. Grasser;H. Reisinger;W. Goes;Th. Aichinger

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