World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
37
Citations
8156
World Ranking
8265
National Ranking
101

Kin Leong Pey publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Kin Leong Pey sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 374 publications — 86th percentile

86% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Kin Leong Pey D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Kin Leong Pey sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 37 D-Index — 16th percentile

16% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Best Publications

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Dielectric breakdown mechanisms in gate oxides

    Salvatore Lombardo;James H. Stathis;Barry P. Linder;Kin Leong Pey

  • Carbon nanotube membranes with ultrahigh specific adsorption capacity for water desalination and purification

    Hui Ying Yang;Zhao Jun Han;Siu Fung Yu;Kin Leong Pey

  • Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing

    K. K. Ong;K. L. Pey;P. S. Lee;A. T. S. Wee

  • Standards for the Characterization of Endurance in Resistive Switching Devices.

    Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang

  • A study of thermo-mechanical stress and its impact on through-silicon vias

    N Ranganathan;N Ranganathan;K Prasad;N Balasubramanian;K L Pey

  • Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication

    A. Heryanto;A. Heryanto;W. N. Putra;W. N. Putra;Alastair David Trigg;S. Gao

  • Excimer laser-annealed dopant segregated Schottky (ELA-DSS) Si nanowire gate-all-around (GAA) pFET with near zero effective Schottky barrier height (SBH)

    Y. K. Chin;K. L. Pey;N. Singh;G. Q. Lo

  • New salicidation technology with Ni(Pt) alloy for MOSFETs

    P.S. Lee;K.L. Pey;D. Mangelinck;J. Ding

  • The nature of dielectric breakdown

    Unknown

  • Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells

    X. Wang;K. L. Pey;C. H. Yip;E. A. Fitzgerald

  • Two-dimensional analytical Mott-Gurney law for a trap-filled solid

    Unknown

  • Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient

    Unknown

  • Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths

    Y. F. Chong;K. L. Pey;A. T. S. Wee;A. See

  • Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization

    C. L. Gan;C. V. Thompson;K. L. Pey;W. K. Choi

  • Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs

    Unknown

  • Salicide formation on narrow poly lines by pulling back of spacer

    Kin-Leong Pey;Soh-Yun Siah

  • Intrinsic nanofilamentation in resistive switching

    Xing Wu;Dongkyu Cha;Michel Bosman;Nagarajan Raghavan

  • Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing

    H. B. Zhao;Kin Leong Pey;W. K. Choi;Sujay Chattopadhyay

  • A High-Yield $\hbox{HfO}_{x}$ -Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

    X A Tran;H Y Yu;Y C Yeo;L Wu

  • Designettes: An Approach to Multidisciplinary Engineering Design Education

    Cassandra Telenko;Kristin Wood;Kevin Otto;Mohan Rajesh Elara

  • A Compact Model for Undoped Silicon-Nanowire MOSFETs With Schottky-Barrier Source/Drain

    Guojun Zhu;Xing Zhou;Teck Seng Lee;Lay Kee Ang

  • Ultra-low sheet resistance metal/poly-SI gate for deep sub-micron CMOS application

    Chong Wee Lim;Kin Leong Pey;Soh Yun Siah;Eng Hwa Lim

  • Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM

    Nagarajan Raghavan;Kin Leong Pey;Wenhu Liu;Xing Wu

  • Bilayer gate dielectric study by scanning tunneling microscopy

    Y. C. Ong;D. S. Ang;K. L. Pey;S. J. O’Shea

  • Germanium coated vertically-aligned multiwall carbon nanotubes as lithium-ion battery anodes

    Rahmat Agung Susantyoko;Rahmat Agung Susantyoko;Xinghui Wang;Leimeng Sun;Kin Leong Pey

  • Direct visualization and in-depth physical study of metal filament formation in percolated high-κ dielectrics

    X. Li;K. L. Pey;M. Bosman;W. H. Liu

  • Activating source and drain junctions and extensions using a single laser anneal

    Yung Fu Chong;Kin Leong Pey;Alex See

  • High performance unipolar AlO y /HfO x /Ni based RRAM compatible with Si diodes for 3D application

    X.A. Tran;B. Gao;J.F. Kang;L. Wu

Frequent Co-Authors

Pooi See Lee
Pooi See Lee Nanyang Technological University
Michel Bosman
Michel Bosman National University of Singapore
Lap Chan
Lap Chan Independent Scientist / Consultant, Singapore
Dongzhi Chi
Dongzhi Chi Agency for Science, Technology and Research
Andrew T. S. Wee
Andrew T. S. Wee National University of Singapore
Xing Wu
Xing Wu East China Normal University
Guo-Qiang Lo
Guo-Qiang Lo Global Foundries

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