His primary areas of study are Optoelectronics, Nanotechnology, Analytical chemistry, Monolayer and Chemical vapor deposition. His Optoelectronics research is multidisciplinary, incorporating perspectives in Gate dielectric, Passivation and Nitride. His study in Nanotechnology is interdisciplinary in nature, drawing from both Photocatalysis, Semiconductor, Transition metal and Photon upconversion.
His work deals with themes such as Sapphire, Transmission electron microscopy and Dislocation, which intersect with Analytical chemistry. His Monolayer study combines topics in areas such as Doping, Band gap and Molybdenum disulfide. His studies deal with areas such as Stress relaxation, Metalorganic vapour phase epitaxy and High-electron-mobility transistor as well as Chemical vapor deposition.
His primary areas of investigation include Optoelectronics, Analytical chemistry, Thin film, Annealing and Silicon. The study incorporates disciplines such as Electronic engineering, Gate dielectric and MOSFET in addition to Optoelectronics. Dongzhi Chi works mostly in the field of Analytical chemistry, limiting it down to topics relating to Chemical vapor deposition and, in certain cases, Metalorganic vapour phase epitaxy.
The Thin film study combines topics in areas such as Composite material, Heterojunction and Epitaxy. His studies in Annealing integrate themes in fields like Crystallography, Amorphous solid, Sheet resistance and Nickel. His Silicon study combines topics from a wide range of disciplines, such as Passivation and Semiconductor.
Optoelectronics, Monolayer, Molybdenum disulfide, Condensed matter physics and Transition metal are his primary areas of study. His Optoelectronics research is mostly focused on the topic Semiconductor. His biological study spans a wide range of topics, including Chemical physics, Chemical vapor deposition, Molybdenum, Crystallography and Metal.
His Molybdenum disulfide research includes themes of Fermi level, Flexible electronics, Field-effect transistor, Substrate and Band gap. His Condensed matter physics research is multidisciplinary, relying on both Seebeck coefficient and Anisotropy. His Transition metal research includes elements of Inorganic chemistry, Spectroscopic ellipsometry and Graphene.
Dongzhi Chi mostly deals with Monolayer, Optoelectronics, Molybdenum disulfide, Transition metal and Band gap. His research integrates issues of Fermi level, Chemical vapor deposition, Molybdenum, Raman spectroscopy and Transistor in his study of Monolayer. His Optoelectronics research incorporates elements of Crystallite, Acceptor and Electronics.
The concepts of his Molybdenum disulfide study are interwoven with issues in Seebeck coefficient, Condensed matter physics and Thermoelectric materials. The various areas that Dongzhi Chi examines in his Transition metal study include Inorganic chemistry, Selectivity and Graphene. He focuses mostly in the field of Band gap, narrowing it down to matters related to X-ray photoelectron spectroscopy and, in some cases, Sputter deposition, Crystallinity, Molecular physics and Relaxation.
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Enhancing multiphoton upconversion through energy clustering at sublattice level
Juan Wang;Renren Deng;Mark A. MacDonald;Bolei Chen.
Nature Materials (2014)
Growth of wafer-scale MoS2 monolayer by magnetron sputtering
Junguang Tao;Jianwei Chai;Xin Lu;Lai Mun Wong.
Sol–gel deposited Cu2O and CuO thin films for photocatalytic water splitting
Yee-Fun Lim;Chin Sheng Chua;Coryl Jing Jun Lee;Dongzhi Chi.
Physical Chemistry Chemical Physics (2014)
Novel Epitaxial Nickel Aluminide-Silicide with Low Schottky-Barrier and Series Resistance for Enhanced Performance of Dopant-Segregated Source/Drain N-channel MuGFETs
R.T.P. Lee;Tsung-Yang Liow;Kian-Ming Tan;A.E.-J. Lim.
symposium on vlsi technology (2007)
Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application
Lin Wang;Wugang Liao;Swee Liang Wong;Zhi Gen Yu.
Advanced Functional Materials (2019)
Lanthanide-doped upconversion materials: emerging applications for photovoltaics and photocatalysis.
Weifeng Yang;Xiyan Li;Dongzhi Chi;Hongjie Zhang.
Vapor-phase growth and characterization of Mo1−xWxS2 (0 ≤ x ≤ 1) atomic layers on 2-inch sapphire substrates
Hongfei Liu;K. K. Ansah Antwi;Soojin Chua;Dongzhi Chi.
New salicidation technology with Ni(Pt) alloy for MOSFETs
P.S. Lee;K.L. Pey;D. Mangelinck;J. Ding.
IEEE Electron Device Letters (2001)
Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering for Realizing N-Channel FinFETs With Reduced External Resistance
R.T.-P. Lee;A.E.-J. Lim;Kian-Ming Tan;Tsung-Yang Liow.
IEEE Electron Device Letters (2009)
Assignment of deep levels causing yellow luminescence in GaN
C. B. Soh;S. J. Chua;H. F. Lim;D. Z. Chi.
Journal of Applied Physics (2004)
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