World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
58
Citations
11330
World Ranking
7732
National Ranking
139

Engineering and Technology

D-Index
58
Citations
11134
World Ranking
2531
National Ranking
33

Overview

Dongzhi Chi is affiliated with the Agency for Science, Technology and Research in Singapore. Their research contributions focus predominantly on materials science and engineering, with a considerable number of publications related to the study and application of two-dimensional materials.

Their recent papers include:

  • Wafer-Scale 2D Hafnium Diselenide Based Memristor Crossbar Array for Energy-Efficient Neural Network Hardware, 2021, Advanced Materials
  • Improving carrier mobility in two-dimensional semiconductors with rippled materials, 2022, Nature Electronics
  • Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing, 2021, ACS Nano
  • Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook, 2023, ACS Nano
  • Low-Symmetry PdSe2 for High Performance Thermoelectric Applications, 2020, Advanced Functional Materials

Frequent co-authors in Dongzhi Chi's work include:

  • Jing Wu
  • Jianwei Chai
  • Yunshan Zhao
  • Ming Yang
  • Mingxi Chen

Their publications are often found in the following venues:

  • Advanced Materials
  • Advanced Functional Materials
  • Advanced Science
  • ACS Nano
  • Nature Electronics

Dongzhi Chi's main fields of study are materials science and engineering. Within these broad domains, their subfields of work include:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Mechanical Engineering

The primary topics covered in their research are:

  • 2D Materials and Applications
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Thermoelectric Materials and Devices
  • Graphene research and applications
  • MXene and MAX Phase Materials
  • Perovskite Materials and Applications

Best Publications

  • Enhancing multiphoton upconversion through energy clustering at sublattice level

    Juan Wang;Renren Deng;Mark A. MacDonald;Bolei Chen

  • Growth of wafer-scale MoS2 monolayer by magnetron sputtering

    Junguang Tao;Jianwei Chai;Xin Lu;Lai Mun Wong

  • Sol–gel deposited Cu2O and CuO thin films for photocatalytic water splitting

    Yee-Fun Lim;Chin Sheng Chua;Coryl Jing Jun Lee;Dongzhi Chi

  • Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application

    Lin Wang;Wugang Liao;Swee Liang Wong;Zhi Gen Yu

  • The organic-2D transition metal dichalcogenide heterointerface

    Yu Li Huang;Yu Jie Zheng;Zhibo Song;Dongzhi Chi

  • CVD Growth of MoS2‐based Two‐dimensional Materials

    H. F. Liu;S. L. Wong;D. Z. Chi

  • Lanthanide-doped upconversion materials: emerging applications for photovoltaics and photocatalysis.

    Weifeng Yang;Xiyan Li;Dongzhi Chi;Hongjie Zhang

  • A Fully Printed Flexible MoS 2 Memristive Artificial Synapse with Femtojoule Switching Energy

    Xuewei Feng;Yida Li;Lin Wang;Shuai Chen

  • Nanocrystal Engineering of Sputter-Grown CuO Photocathode for Visible-Light-Driven Electrochemical Water Splitting.

    Saeid Masudy-Panah;Roozbeh Siavash Moakhar;Chin Sheng Chua;Hui Ru Tan

  • High-throughput screening of transition metal single atom catalysts anchored on molybdenum disulfide for nitrogen fixation

    Tong Yang;Ting Ting Song;Jun Zhou;Shijie Wang

  • Wafer-Scale 2D Hafnium Diselenide Based Memristor Crossbar Array for Energy-Efficient Neural Network Hardware

    Sifan Li;Mei-Er Pam;Yesheng Li;Li Chen

  • Novel Epitaxial Nickel Aluminide-Silicide with Low Schottky-Barrier and Series Resistance for Enhanced Performance of Dopant-Segregated Source/Drain N-channel MuGFETs

    R.T.P. Lee;Tsung-Yang Liow;Kian-Ming Tan;A.E.-J. Lim

  • Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide

    Baochen Liao;Bram Hoex;Armin G. Aberle;Dongzhi Chi

  • Vapor-phase growth and characterization of Mo1−xWxS2 (0 ≤ x ≤ 1) atomic layers on 2-inch sapphire substrates

    Hongfei Liu;K. K. Ansah Antwi;Soojin Chua;Dongzhi Chi

  • Microstructural characteristics and mechanical properties of carbon nanotube reinforced Inconel 625 parts fabricated by selective laser melting

    Pei Wang;Baicheng Zhang;Cheng Cheh Tan;Srinivasan Raghavan

  • Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing.

    Xuewei Feng;Sifan Li;Swee Liang Wong;Shiwun Tong

  • Far out-of-equilibrium spin populations trigger giant spin injection into atomically thin MoS2

    Liang Cheng;Xinbo Wang;Xinbo Wang;Weifeng Yang;Jianwei Chai

  • Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS2 Field-Effect Transistors by Atomic Nitrogen Treatment.

    Baoshan Tang;Zhi Gen Yu;Li Huang;Jianwei Chai

  • New salicidation technology with Ni(Pt) alloy for MOSFETs

    P.S. Lee;K.L. Pey;D. Mangelinck;J. Ding

  • Assignment of deep levels causing yellow luminescence in GaN

    C. B. Soh;S. J. Chua;H. F. Lim;D. Z. Chi

  • Thermal Stability of (HfO2)x(Al2O3)1−x on Si

    H. Y. Yu;N. Wu;M. F. Li;Chunxiang Zhu

  • Piezotronic effect on the transport properties of GaN nanobelts for active flexible electronics.

    Ruomeng Yu;Lin Dong;Lin Dong;Caofeng Pan;Simiao Niu

Frequent Co-Authors

Soo Jin Chua
Soo Jin Chua National University of Singapore
Shijie Wang
Shijie Wang Agency for Science, Technology and Research
Kin Leong Pey
Kin Leong Pey Singapore University of Technology and Design
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Ming Yang
Ming Yang Hong Kong Polytechnic University
Jing Wu
Jing Wu Agency for Science, Technology and Research
Sungjoo Lee
Sungjoo Lee Sungkyunkwan University
Ganesh S. Samudra
Ganesh S. Samudra National University of Singapore
Pooi See Lee
Pooi See Lee Nanyang Technological University
Kah-Wee Ang
Kah-Wee Ang National University of Singapore

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