World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
58
Citations
11330
World Ranking
7730
National Ranking
138

Engineering and Technology

D-Index
58
Citations
11134
World Ranking
2533
National Ranking
34

Dongzhi Chi publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Dongzhi Chi sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 349 publications — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Dongzhi Chi D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Dongzhi Chi sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 58 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Dongzhi Chi is affiliated with the Agency for Science, Technology and Research in Singapore. Their research contributions focus predominantly on materials science and engineering, with a considerable number of publications related to the study and application of two-dimensional materials.

Their recent papers include:

  • Wafer-Scale 2D Hafnium Diselenide Based Memristor Crossbar Array for Energy-Efficient Neural Network Hardware, 2021, Advanced Materials
  • Improving carrier mobility in two-dimensional semiconductors with rippled materials, 2022, Nature Electronics
  • Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing, 2021, ACS Nano
  • Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook, 2023, ACS Nano
  • Low-Symmetry PdSe2 for High Performance Thermoelectric Applications, 2020, Advanced Functional Materials

Frequent co-authors in Dongzhi Chi's work include:

  • Jing Wu
  • Jianwei Chai
  • Yunshan Zhao
  • Ming Yang
  • Mingxi Chen

Their publications are often found in the following venues:

  • Advanced Materials
  • Advanced Functional Materials
  • Advanced Science
  • ACS Nano
  • Nature Electronics

Dongzhi Chi's main fields of study are materials science and engineering. Within these broad domains, their subfields of work include:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Mechanical Engineering

The primary topics covered in their research are:

  • 2D Materials and Applications
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Thermoelectric Materials and Devices
  • Graphene research and applications
  • MXene and MAX Phase Materials
  • Perovskite Materials and Applications

Best Publications

  • Enhancing multiphoton upconversion through energy clustering at sublattice level

    Juan Wang;Renren Deng;Mark A. MacDonald;Bolei Chen

  • Growth of wafer-scale MoS2 monolayer by magnetron sputtering

    Junguang Tao;Jianwei Chai;Xin Lu;Lai Mun Wong

  • Sol–gel deposited Cu2O and CuO thin films for photocatalytic water splitting

    Yee-Fun Lim;Chin Sheng Chua;Coryl Jing Jun Lee;Dongzhi Chi

  • Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application

    Lin Wang;Wugang Liao;Swee Liang Wong;Zhi Gen Yu

  • The organic-2D transition metal dichalcogenide heterointerface

    Yu Li Huang;Yu Jie Zheng;Zhibo Song;Dongzhi Chi

  • CVD Growth of MoS2‐based Two‐dimensional Materials

    H. F. Liu;S. L. Wong;D. Z. Chi

  • Lanthanide-doped upconversion materials: emerging applications for photovoltaics and photocatalysis.

    Weifeng Yang;Xiyan Li;Dongzhi Chi;Hongjie Zhang

  • A Fully Printed Flexible MoS 2 Memristive Artificial Synapse with Femtojoule Switching Energy

    Xuewei Feng;Yida Li;Lin Wang;Shuai Chen

  • Nanocrystal Engineering of Sputter-Grown CuO Photocathode for Visible-Light-Driven Electrochemical Water Splitting.

    Saeid Masudy-Panah;Roozbeh Siavash Moakhar;Chin Sheng Chua;Hui Ru Tan

  • High-throughput screening of transition metal single atom catalysts anchored on molybdenum disulfide for nitrogen fixation

    Tong Yang;Ting Ting Song;Jun Zhou;Shijie Wang

  • Wafer-Scale 2D Hafnium Diselenide Based Memristor Crossbar Array for Energy-Efficient Neural Network Hardware

    Sifan Li;Mei-Er Pam;Yesheng Li;Li Chen

  • Novel Epitaxial Nickel Aluminide-Silicide with Low Schottky-Barrier and Series Resistance for Enhanced Performance of Dopant-Segregated Source/Drain N-channel MuGFETs

    R.T.P. Lee;Tsung-Yang Liow;Kian-Ming Tan;A.E.-J. Lim

  • Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide

    Baochen Liao;Bram Hoex;Armin G. Aberle;Dongzhi Chi

  • Vapor-phase growth and characterization of Mo1−xWxS2 (0 ≤ x ≤ 1) atomic layers on 2-inch sapphire substrates

    Hongfei Liu;K. K. Ansah Antwi;Soojin Chua;Dongzhi Chi

  • Microstructural characteristics and mechanical properties of carbon nanotube reinforced Inconel 625 parts fabricated by selective laser melting

    Pei Wang;Baicheng Zhang;Cheng Cheh Tan;Srinivasan Raghavan

  • Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing.

    Xuewei Feng;Sifan Li;Swee Liang Wong;Shiwun Tong

  • Far out-of-equilibrium spin populations trigger giant spin injection into atomically thin MoS2

    Liang Cheng;Xinbo Wang;Xinbo Wang;Weifeng Yang;Jianwei Chai

  • Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS2 Field-Effect Transistors by Atomic Nitrogen Treatment.

    Baoshan Tang;Zhi Gen Yu;Li Huang;Jianwei Chai

  • New salicidation technology with Ni(Pt) alloy for MOSFETs

    P.S. Lee;K.L. Pey;D. Mangelinck;J. Ding

  • Assignment of deep levels causing yellow luminescence in GaN

    C. B. Soh;S. J. Chua;H. F. Lim;D. Z. Chi

  • Thermal Stability of (HfO2)x(Al2O3)1−x on Si

    H. Y. Yu;N. Wu;M. F. Li;Chunxiang Zhu

  • Piezotronic effect on the transport properties of GaN nanobelts for active flexible electronics.

    Ruomeng Yu;Lin Dong;Lin Dong;Caofeng Pan;Simiao Niu

Frequent Co-Authors

Soo Jin Chua
Soo Jin Chua National University of Singapore
Shijie Wang
Shijie Wang Agency for Science, Technology and Research
Kin Leong Pey
Kin Leong Pey Singapore University of Technology and Design
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Ming Yang
Ming Yang Hong Kong Polytechnic University
Jing Wu
Jing Wu Agency for Science, Technology and Research
Sungjoo Lee
Sungjoo Lee Sungkyunkwan University
Ganesh S. Samudra
Ganesh S. Samudra National University of Singapore
Pooi See Lee
Pooi See Lee Nanyang Technological University
Kah-Wee Ang
Kah-Wee Ang National University of Singapore

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