World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
51
Citations
9081
World Ranking
2699
National Ranking
47

Kah-Wee Ang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Kah-Wee Ang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 247 publications — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Kah-Wee Ang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Kah-Wee Ang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 51 D-Index — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Kah-Wee Ang is affiliated with the National University of Singapore in Singapore. Their research primarily focuses on the fields of engineering and materials science, with a notable emphasis on electrical and electronic engineering and materials chemistry. The scientist's work also intersects with cellular and molecular neuroscience, biomedical engineering, and artificial intelligence as subfields of their study.

Their research topics include advanced memory and neural computing, ferroelectric and negative capacitance devices, and applications of two-dimensional (2D) materials. Additional areas of focus are neural networks and reservoir computing, neuroscience and neural engineering, photoreceptor and optogenetics research, and materials such as MXene and MAX phase materials.

Kah-Wee Ang has published extensively in several venues. The most frequent publication outlets include:

  • Advanced Materials
  • Advanced Electronic Materials
  • ACS Nano
  • Nature Communications
  • Advanced Functional Materials

Recent papers authored or coauthored by Kah-Wee Ang cover a range of topics in memristor technology, 2D materials, and neural networks. Selected recent works include:

  • Hardware implementation of memristor-based artificial neural networks, 2024, Nature Communications
  • Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries, 2021, Nature Electronics
  • Zero-bias mid-infrared graphene photodetectors with bulk photoresponse and calibration-free polarization detection, 2020, Nature Communications
  • Hardware Implementation of Neuromorphic Computing Using Large-Scale Memristor Crossbar Arrays, 2020, Advanced Intelligent Systems
  • Wafer-Scale 2D Hafnium Diselenide Based Memristor Crossbar Array for Energy-Efficient Neural Network Hardware, 2021, Advanced Materials

The scientist collaborates frequently with several colleagues, with repeated partnerships including:

  • Sifan Li
  • Yu-Chieh Chien
  • Yong-Wei Zhang
  • Haofei Zheng
  • Zhi Gen Yu

The convergence of their work on advanced neural computing architectures, energy-efficient hardware implementations, and emerging 2D materials reflects engagement with contemporary challenges in materials chemistry, device engineering, and artificial intelligence applications. Their contributions span highly specialized topics related to evolving technologies in memristor arrays and neuromorphic systems.

Best Publications

  • Silicon Modulators and Germanium Photodetectors on SOI: Monolithic Integration, Compatibility, and Performance Optimization

    Tsung-Yang Liow;Kah-Wee Ang;Qing Fang;Jun-Feng Song

  • Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application

    Lin Wang;Wugang Liao;Swee Liang Wong;Zhi Gen Yu

  • Waveguide-Integrated Black Phosphorus Photodetector for Mid-Infrared Applications

    Li Huang;Bowei Dong;Xin Guo;Yuhua Chang

  • Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

    Yesheng Li;Leyi Loh;Sifan Li;Li Chen

  • Zero-bias mid-infrared graphene photodetectors with bulk photoresponse and calibration-free polarization detection

    Jingxuan Wei;Ying Li;Lin Wang;Wugang Liao

  • A Fully Printed Flexible MoS 2 Memristive Artificial Synapse with Femtojoule Switching Energy

    Xuewei Feng;Yida Li;Lin Wang;Shuai Chen

  • Hardware Implementation of Neuromorphic Computing Using Large-Scale Memristor Crossbar Arrays

    Yesheng Li;Kah-Wee Ang

  • 2D Photovoltaic Devices: Progress and Prospects

    Lin Wang;Li Huang;Wee Chong Tan;Xuewei Feng

  • Wafer-Scale 2D Hafnium Diselenide Based Memristor Crossbar Array for Energy-Efficient Neural Network Hardware

    Sifan Li;Mei-Er Pam;Yesheng Li;Li Chen

  • Al-Doped Black Phosphorus p–n Homojunction Diode for High Performance Photovoltaic

    Yuanda Liu;Yuanda Liu;Yongqing Cai;Gang Zhang;Yong-Wei Zhang

  • Wearable Triboelectric-Human-Machine Interface (THMI) Using Robust Nanophotonic Readout

    Bowei Dong;Yanqin Yang;Qiongfeng Shi;Siyu Xu

  • Monolithic Polarization and Phase Diversity Coherent Receiver in Silicon

    C.R. Doerr;P.J. Winzer;Young-Kai Chen;S. Chandrasekhar

  • Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping.

    Wee Chong Tan;Yongqing Cai;Rui Jie Ng;Li Huang

  • Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon source/drain stressors

    Kah-Wee Ang;King-Jien Chui;Vladimir Bliznetsov;Chih-Hang Tung

  • Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing.

    Xuewei Feng;Sifan Li;Swee Liang Wong;Shiwun Tong

  • Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions

    Kah Wee Ang;King Jien Chui;V. Bliznetsov;Anyan Du

  • WDM multi-channel silicon photonic receiver with 320 Gbps data transmission capability

    Qing Fang;Tsung-Yang Liow;Jun Feng Song;Kah Wee Ang

  • Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS2 Field-Effect Transistors by Atomic Nitrogen Treatment.

    Baoshan Tang;Zhi Gen Yu;Li Huang;Jianwei Chai

  • Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS 2 and HfO 2 High-k Dielectric

    Pengkun Xia;Xuewei Feng;Rui Jie Ng;Shijie Wang

  • Large-scale two-dimensional MoS 2 photodetectors by magnetron sputtering

    Z. P. Ling;R. Yang;J. W. Chai;S. J. Wang

  • A Black Phosphorus Carbide Infrared Phototransistor

    Wee Chong Tan;Li Huang;Rui Jie Ng;Lin Wang

Frequent Co-Authors

Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Ganesh S. Samudra
Ganesh S. Samudra National University of Singapore
Li Huang
Li Huang Southern University of Science and Technology
Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Chengkuo Lee
Chengkuo Lee National University of Singapore
Dongzhi Chi
Dongzhi Chi Agency for Science, Technology and Research
Yong-Wei Zhang
Yong-Wei Zhang Institute of High Performance Computing
Ming-Fu Li
Ming-Fu Li Fudan University
Xiao Gong
Xiao Gong National University of Singapore
Guo-Qiang Lo
Guo-Qiang Lo Global Foundries

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