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Ming-Fu Li

Ming-Fu Li

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
5741
World Ranking
5132
National Ranking
752

Overview

Ming-Fu Li is a researcher affiliated with Fudan University in China, specializing predominantly in the field of Engineering. Their work spans various subfields including Electrical and Electronic Engineering, Mechanical Engineering, Civil and Structural Engineering, Computer Networks and Communications, and Computer Vision and Pattern Recognition.

Their research interests cover a range of technical topics with a focus on energy and materials science. Key topics include:

  • Energy Harvesting in Wireless Networks
  • Advanced MIMO Systems Optimization
  • High Entropy Alloys Studies
  • Wireless Power Transfer Systems
  • Additive Manufacturing Materials and Processes
  • Intermetallics and Advanced Alloy Properties
  • Concrete and Cement Materials Research

Ming-Fu Li has contributed scholarly articles to several prominent publication venues. Frequent venues include:

  • Journal of Mechanical Engineering
  • SSRN Electronic Journal
  • Materials Letters X
  • Construction and Building Materials
  • Sensors

Their notable recent papers include:

  • "Effect of magnetic-electric-ultrasonic fields on microstructure and properties of Ni60A laser cladding coating," 2022, Materials Letters X
  • "Effect of magnetic field waveform on microstructure and properties of laser cladding," 2021, Materials Letters X
  • "Extreme High Speed Laser Cladding 316L Coating," 2021, Journal of Physics Conference Series
  • "On-Demand Energy Transfer and Energy-Aware Polling-Based MAC for Wireless Powered Sensor Networks," 2022, Sensors
  • "WC electron microscopy image segmentation based on improved watershed and Hu-moment edge matching algorithms," 2024, Computational Materials Science

Collaboration is an integral part of their research. Frequent coauthors include:

  • Huei-Wen Ferng
  • Ching-Chieh Fang
  • Houming Zhou
  • Zixin Chen
  • Caixing Xu

This body of work reflects a multidisciplinary approach linking advanced materials processing, wireless network optimization, and computational image analysis methods.

Best Publications

  • N-type Schottky barrier source/drain MOSFET using ytterbium silicide

    Shiyang Zhu;Jingde Chen;M.-F. Li;M.-F. Li;S.J. Lee

  • Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge

    H.Y. Yu;J.D. Chen;M.F. Li;S.J. Lee

  • A high performance MIM capacitor using HfO 2 dielectrics

    Hang Hu;Chunxiang Zhu;Y.F. Lu;M.F. Li

  • Fermi pinning-induced thermal instability of metal-gate work functions

    H.Y. Yu;C. Ren;Yee-Chia Yeo;J.F. Kang

  • Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure

    Wei Cao;C J Yao;G F Jiao;Daming Huang

  • Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

    Nan Wu;Qingchun Zhang;Chunxiang Zhu;D. S.H. Chan

  • An analysis of temperature dependent photoluminescence line shapes in InGaN

    K. L. Teo;J. S. Colton;P. Y. Yu;E. R. Weber

  • Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon source/drain stressors

    Kah-Wee Ang;King-Jien Chui;Vladimir Bliznetsov;Chih-Hang Tung

  • Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions

    Kah Wee Ang;King Jien Chui;V. Bliznetsov;Anyan Du

  • Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for si analog circuit applications

    Hang Hu;Chunxiang Zhu;Y. F. Lu;Y. H. Wu

  • Improvement of voltage linearity in high-/spl kappa/ MIM capacitors using HfO/sub 2/-SiO/sub 2/ stacked dielectric

    Sun Jung Kim;Byung Jin Cho;Ming-Fu Li;Shi-Jin Ding

  • Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode

    Shiyang Zhu;H.Y. Yu;S.J. Whang;J.H. Chen

  • RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications

    Shi-Jin Ding;Hang Hu;Chunxiang Zhu;Sun Jung Kim

  • Understand NBTI Mechanism by Developing Novel Measurement Techniques

    Ming-Fu Li;Daming Huang;Chen Shen;T. Yang

  • Metal gate work function engineering on gate leakage of MOSFETs

    Yong-Tian Hou;Ming-Fu Li;T. Low;Dim-Lee Kwong

  • Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications

    HongYu Yu;Ming-Fu Li;Dim-Lee Kwong

  • PVD HfO 2 for high-precision MIM capacitor applications

    Sun Jung Kim;Byung Jin Cho;Ming Fu Li;Xiongfei Yu

  • Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process

    K.T. Chan;A. Chin;Y.D. Lin;C.Y. Chang

  • New degradation mechanisms and reliability performance in tunneling field effect transistors

    G. F. Jiao;Z. X. Chen;H. Y. Yu;X. Y. Huang

  • Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs

    X.P. Wang;Ming-Fu Li;C. Ren;X.F. Yu

  • Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit application

    T. Yang;M.F. Li;C. Shen;C.H. Ang

Frequent Co-Authors

Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Chunxiang Zhu
Chunxiang Zhu National University of Singapore
Albert Chin
Albert Chin National Yang Ming Chiao Tung University
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Byung Jin Cho
Byung Jin Cho Chungbuk National University
Ganesh S. Samudra
Ganesh S. Samudra National University of Singapore
Kah-Wee Ang
Kah-Wee Ang National University of Singapore
Sungjoo Lee
Sungjoo Lee Sungkyunkwan University
Tony Low
Tony Low University of Minnesota
Tow Chong Chong
Tow Chong Chong Singapore University of Technology and Design

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