What is he best known for?
The fields of study he is best known for:
- Quantum mechanics
- Semiconductor
- Electron
The scientist’s investigation covers issues in Optoelectronics, Electrical engineering, MOSFET, Dielectric and Silicon.
His Optoelectronics research is multidisciplinary, incorporating elements of Equivalent oxide thickness, Electrode, Gate dielectric, Threshold voltage and Electronic engineering.
His Gate dielectric research includes themes of High-κ dielectric, Metal gate and Passivation.
Voltage and Transistor are among the areas of Electrical engineering where Ming-Fu Li concentrates his study.
Ming-Fu Li interconnects Electron mobility, CMOS and Gate oxide in the investigation of issues within MOSFET.
His biological study spans a wide range of topics, including Capacitance, Wafer and Capacitor.
His most cited work include:
- N-type Schottky barrier source/drain MOSFET using ytterbium silicide (229 citations)
- Dynamic NBTI of PMOS transistors and its impact on device lifetime (162 citations)
- Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling (161 citations)
What are the main themes of his work throughout his whole career to date?
Ming-Fu Li mostly deals with Optoelectronics, MOSFET, Electrical engineering, Condensed matter physics and Dielectric.
Ming-Fu Li combines subjects such as Transistor, Gate dielectric, Metal gate and Electronic engineering with his study of Optoelectronics.
His MOSFET research also works with subjects such as
- Analytical chemistry which connect with Doping,
- Electron mobility and related Extrinsic semiconductor.
His Electrical engineering study integrates concerns from other disciplines, such as Substrate and Silicon.
In his research, Quantization is intimately related to Effective mass, which falls under the overarching field of Condensed matter physics.
He focuses mostly in the field of Dielectric, narrowing it down to topics relating to Capacitor and, in certain cases, Capacitance and Insulator.
He most often published in these fields:
- Optoelectronics (57.79%)
- MOSFET (32.79%)
- Electrical engineering (27.05%)
What were the highlights of his more recent work (between 2008-2017)?
- Optoelectronics (57.79%)
- Electrical engineering (27.05%)
- Dielectric (21.31%)
In recent papers he was focusing on the following fields of study:
His primary scientific interests are in Optoelectronics, Electrical engineering, Dielectric, MOSFET and Gate dielectric.
He has researched Optoelectronics in several fields, including Field-effect transistor, Transistor and Logic gate.
His Electrical engineering research incorporates themes from Stress, Acceptor, Electrode and Gallium arsenide.
His biological study spans a wide range of topics, including Leakage, Voltage, Capacitor and Microelectronics.
His MOSFET research incorporates elements of Threshold voltage, High-κ dielectric and Atomic physics.
His Gate dielectric research includes elements of Molecular physics, Phase and Gate oxide.
Between 2008 and 2017, his most popular works were:
- Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure (81 citations)
- A High-Yield $\hbox{HfO}_{x}$ -Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration (47 citations)
- New degradation mechanisms and reliability performance in tunneling field effect transistors (40 citations)
In his most recent research, the most cited papers focused on:
- Quantum mechanics
- Semiconductor
- Electron
His scientific interests lie mostly in Electrical engineering, Optoelectronics, Resistive random-access memory, Stress and Electrode.
His research on Electrical engineering focuses in particular on Transistor.
Ming-Fu Li combines subjects such as Field-effect transistor and Voltage with his study of Optoelectronics.
He works mostly in the field of Resistive random-access memory, limiting it down to concerns involving Resistive switching and, occasionally, CMOS.
His work deals with themes such as Acceptor, Gate dielectric, Band gap and Transconductance, which intersect with Stress.
His studies deal with areas such as Molecular physics, Gallium arsenide and MOSFET as well as Band gap.
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