World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
71
Citations
19660
World Ranking
864
National Ranking
16

Materials Science

D-Index
72
Citations
20217
World Ranking
4012
National Ranking
141

Byung Jin Cho publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Byung Jin Cho sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 558 publications — 88th percentile

88% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Byung Jin Cho D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Byung Jin Cho sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 71 D-Index — 88th percentile

88% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Byung Jin Cho is affiliated with the Korea Advanced Institute of Science and Technology in South Korea. Their research spans the fields of Engineering and Materials Science, with significant focus on Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Biomedical Engineering, and Electronic, Optical and Magnetic Materials.

The scientist's work covers key topics including Semiconductor materials and devices, Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Advanced Sensor and Energy Harvesting Materials, Conducting polymers and applications, Ga2O3 and related materials, and Advanced Thermoelectric Materials and Devices.

Frequent publication venues for Byung Jin Cho include IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Advanced Electronic Materials, Solid-State Electronics, and Advanced Materials. The highest number of publications appear in IEEE Electron Device Letters and IEEE Transactions on Electron Devices.

Recent papers authored by Byung Jin Cho focus on various aspects of materials science and applied engineering:

  • "Thermal display glove for interacting with virtual reality" (2020, Scientific Reports)
  • "Hydrothermal Synthesis and Photocatalytic Property of Sn-doped β-Ga2O3 Nanostructure" (2020, ECS Journal of Solid State Science and Technology)
  • "Method to Achieve the Morphotropic Phase Boundary in HfxZr1−xO2 by Electric Field Cycling for DRAM Cell Capacitor Applications" (2021, IEEE Electron Device Letters)
  • "Impact of Al doping on a hydrothermally synthesized β-Ga2O3 nanostructure for photocatalysis applications" (2021, RSC Advances)
  • "Electrical and photocurrent properties of a polycrystalline Sn-doped β-Ga2O3 thin film" (2020, Materials Science in Semiconductor Processing)

The scientist collaborates frequently with other researchers. Notable coauthors include Min Ju Kim, Jaejoong Jeong, Youngkeun Park, Wan Sik Hwang, and Seongho Kim.

Best Publications

  • A wearable thermoelectric generator fabricated on a glass fabric

    Sun Jin Kim;Ju Hyung We;Byung Jin Cho

  • Charge-transfer-based gas sensing using atomic-layer MoS2.

    Byungjin Cho;Myung Gwan Hahm;Minseok Choi;Jongwon Yoon

  • Graphene oxide thin films for flexible nonvolatile memory applications.

    Hu Young Jeong;Jong Yun Kim;Jong Yun Kim;Jeong Won Kim;Jin Ok Hwang

  • Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

    Byungjin Cho;Sunghun Song;Yongsung Ji;Tae-Wook Kim

  • Direct Measurement of Adhesion Energy of Monolayer Graphene As-Grown on Copper and Its Application to Renewable Transfer Process

    Taeshik Yoon;Woo Cheol Shin;Taek Yong Kim;Jeong Hun Mun

  • Chemical Sensing of 2D Graphene/MoS2 Heterostructure device

    Byungjin Cho;Jongwon Yoon;Sung Kwan Lim;Ah Ra Kim

  • Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance

    Seung Min Song;Jong Kyung Park;One Jae Sul;Byung Jin Cho

  • Energy gap and band alignment for (HfO2)x(Al2O3)1−x on (100) Si

    Unknown

  • Self-Powered Wearable Electrocardiography Using a Wearable Thermoelectric Power Generator

    Choong Sun Kim;Hyeong Man Yang;Jinseok Lee;Gyu Soup Lee

  • Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics

    Hanul Moon;Hyejeong Seong;Woo Cheol Shin;Won-Tae Park

  • Ultrasmooth, extremely deformable and shape recoverable Ag nanowire embedded transparent electrode

    Sanggil Nam;Myungkwan Song;Dong-Ho Kim;Byungjin Cho

  • Hybrid composite of screen-printed inorganic thermoelectric film and organic conducting polymer for flexible thermoelectric power generator

    Ju Hyung We;Sun Jin Kim;Byung Jin Cho

  • Three-dimensional integration of organic resistive memory devices

    Sunghoon Song;Byungjin Cho;Tae Wook Kim;Yongsung Ji

  • High-Performance Flexible Thermoelectric Power Generator Using Laser Multiscanning Lift-Off Process

    Sun Jin Kim;Han Eol Lee;Hyeongdo Choi;Yongjun Kim

  • Electromagnetic interference shielding effectiveness of monolayer graphene

    Seul Ki Hong;Ki Yeong Kim;Taek Yong Kim;Jong Hoon Kim

  • Graphene-based gas sensor: metal decoration effect and application to a flexible device

    Byungjin Cho;Jongwon Yoon;Myung Gwan Hahm;Dong-Ho Kim

  • Large-area single-layer MoSe2 and its van der Waals heterostructures.

    Gi Woong Shim;Kwonjae Yoo;Seung-Bum Seo;Jongwoo Shin

  • Structural design of a flexible thermoelectric power generator for wearable applications

    Choong Sun Kim;Gyu Soup Lee;Hyeongdo Choi;Yong Jun Kim

  • Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

    Nan Wu;Qingchun Zhang;Chunxiang Zhu;Chia Chin Yeo

  • Rewritable Switching of One Diode–One Resistor Nonvolatile Organic Memory Devices

    Byungjin Cho;Tae-Wook Kim;Tae-Wook Kim;Sunghoon Song;Yongsung Ji

  • Electrical and Interfacial Characterization of Atomic Layer Deposited High- $\kappa$ Gate Dielectrics on GaAs for Advanced CMOS Devices

    G.K. Dalapati;Yi Tong;Wei-Yip Loh;Hoe Keat Mun

Frequent Co-Authors

Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Chunxiang Zhu
Chunxiang Zhu National University of Singapore
Albert Chin
Albert Chin National Yang Ming Chiao Tung University
Ming-Fu Li
Ming-Fu Li Fudan University
D.S.H. Chan
D.S.H. Chan National University of Singapore
Sung-Yool Choi
Sung-Yool Choi Korea Advanced Institute of Science and Technology
Sung Gap Im
Sung Gap Im Korea Advanced Institute of Science and Technology
Yongfeng Lu
Yongfeng Lu University of Nebraska–Lincoln
Choong-Ki Kim
Choong-Ki Kim Korea Advanced Institute of Science and Technology
Yang-Kyu Choi
Yang-Kyu Choi Korea Advanced Institute of Science and Technology

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