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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
5393
World Ranking
4751
National Ranking
1665

Overview

Prashant Majhi is affiliated with Intel in the United States. Their research spans multiple fields within mathematics and computer science, with significant focus on applied mathematics, geometry, topology, and artificial intelligence. The main topics covered in their body of work include geometric analysis and curvature flows, geometry and complex manifolds, imbalanced data classification techniques, data mining algorithms and applications, data stream mining techniques, fixed point theorems analysis, and advanced differential geometry research.

Majhi's publications have appeared in a handful of specialized scientific venues. These include:

  • Bulletin of the "Transilvania" University of Braşov. Series III, Mathematics and Computer Science (3 publications)
  • Electronic Journal of Mathematical Analysis and Applications (1 publication)

The recent papers authored or coauthored by Majhi are as follows:

  • "Three dimensional Sasakian manifolds admitting η-Ricci solitons," published in 2020 in the Bulletin of the "Transilvania" University of Braşov. Series III, Mathematics and Computer Science
  • "*-Critical point equation on N(k)-contact manifolds," published in 2020 in the Bulletin of the "Transilvania" University of Braşov. Series III, Mathematics and Computer Science
  • "CONTACT METRIC MANIFOLDS SATISFYING FISCHER-MARSDEN EQUATION," published in 2021 in the Electronic Journal of Mathematical Analysis and Applications
  • "Almost η-Ricci solitons on two classes of almost Kenmotsu manifolds," published in 2024 in the Bulletin of the "Transilvania" University of Braşov. Series III, Mathematics and Computer Science

Frequent coauthors collaborating with Majhi include:

  • D. Kar
  • Dibakar Dey
  • Gopikrishna Panda
  • Sunil Kumar Dhal
  • Manifolds Satisfying

The research contributions demonstrate a combination of theoretical exploration in differential geometry and applications of computational techniques related to data classification and mining. Majhi's involvement spans both advanced mathematical structures such as Sasakian and contact metric manifolds, as well as algorithmic approaches in machine learning contexts.

Best Publications

  • Forming a type i heterostructure in a group iv semiconductor

    Chi On Chui;Prashant Majhi;Wilman Tsai;Jack T. Kavalieros

  • Si tunnel transistors with a novel silicided source and 46mV/dec swing

    Kanghoon Jeon;Wei-Yip Loh;Pratik Patel;Chang Yong Kang

  • Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

    P. D. Kirsch;P. Sivasubramani;J. Huang;C. D. Young

  • Wafer-scale, sub-5 nm junction formation by monolayer doping and conventional spike annealing.

    Johnny C. Ho;Roie Yerushalmi;Gregory Smith;Prashant Majhi

  • InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition

    N. Goel;P. Majhi;C. O. Chui;W. Tsai

  • Work function engineering using lanthanum oxide interfacial layers

    H. N. Alshareef;M. Quevedo-Lopez;H. C. Wen;R. Harris

  • Prospect of tunneling green transistor for 0.1V CMOS

    Chenming Hu;Pratik Patel;Anupama Bowonder;Kanghoon Jeon

  • Nanoscale doping of InAs via sulfur monolayers

    Johnny C. Ho;Johnny C. Ho;Alexandra C. Ford;Alexandra C. Ford;Yu Lun Chueh;Yu Lun Chueh;Paul W. Leu;Paul W. Leu

  • Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO/sub 2/ and HfO/sub 2/

    Ching-Huang Lu;G.M.T. Wong;M.D. Deal;W. Tsai

  • Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)

    B.H. Lee;C.D. Young;R. Choi;J.H. Sim

  • Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains

    Prashant Majhi;Mantu K. Hudait;Jack T. Kavalieros;Ravi Pillarisetty

  • High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric

    N. Goel;P. Majhi;W. Tsai;M. Warusawithana

  • Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

    InJo Ok;H. Kim;M. Zhang;F. Zhu

  • IMPROVEMENT IN CONDUCTIVITY OF GROUP III-V SEMICONDUCTOR DEVICE

    Jack T Kavalieros;Willy Rachmady;Niloy Mukherjee;Marko Radosavljevic

  • Transistors and methods of manufacture thereof

    Hongfa Luan;Prashant Majhi

  • electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress

    S. Chatterjee;Yue Kuo;J. Lu;J.-Y. Tewg

  • Metal gate work function engineering using AlNx interfacial layers

    H. N. Alshareef;H. N. Alshareef;H. F. Luan;K. Choi;H. R. Harris

  • Addressing the gate stack challenge for high mobility In x Ga 1-x As channels for NFETs

    N. Goel;D. Heh;S. Koveshnikov;I. Ok

  • Near band edge Schottky barrier height modulation using high-κ dielectric dipole tuning mechanism

    B. E. Coss;W.-Y. Loh;R. M. Wallace;J. Kim

  • Growth mechanism of TiN film on dielectric films and the effects on the work function

    K. Choi;P. Lysaght;H. Alshareef;C. Huffman

  • Band-Engineered Low PMOS V T with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme

    H.R. Harris;P. Kalra;P. Majhi;M. Hussain

Frequent Co-Authors

Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Paul Kirsch
Paul Kirsch Samsung Austin Semiconductor
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Husam N. Alshareef
Husam N. Alshareef King Abdullah University of Science and Technology
Sanjay K. Banerjee
Sanjay K. Banerjee The University of Texas at Austin
Rino Choi
Rino Choi Inha University
Muhammad Mustafa Hussain
Muhammad Mustafa Hussain Purdue University West Lafayette
Uday Shah
Uday Shah Intel (United States)
Robert S. Chau
Robert S. Chau Intel (United States)
Brian S. Doyle
Brian S. Doyle Intel (United States)

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