World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
5393
World Ranking
4751
National Ranking
1666

Prashant Majhi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Prashant Majhi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 297 publications — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Prashant Majhi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Prashant Majhi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 39 D-Index — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Prashant Majhi is affiliated with Intel in the United States. Their research spans multiple fields within mathematics and computer science, with significant focus on applied mathematics, geometry, topology, and artificial intelligence. The main topics covered in their body of work include geometric analysis and curvature flows, geometry and complex manifolds, imbalanced data classification techniques, data mining algorithms and applications, data stream mining techniques, fixed point theorems analysis, and advanced differential geometry research.

Majhi's publications have appeared in a handful of specialized scientific venues. These include:

  • Bulletin of the "Transilvania" University of Braşov. Series III, Mathematics and Computer Science (3 publications)
  • Electronic Journal of Mathematical Analysis and Applications (1 publication)

The recent papers authored or coauthored by Majhi are as follows:

  • "Three dimensional Sasakian manifolds admitting η-Ricci solitons," published in 2020 in the Bulletin of the "Transilvania" University of Braşov. Series III, Mathematics and Computer Science
  • "*-Critical point equation on N(k)-contact manifolds," published in 2020 in the Bulletin of the "Transilvania" University of Braşov. Series III, Mathematics and Computer Science
  • "CONTACT METRIC MANIFOLDS SATISFYING FISCHER-MARSDEN EQUATION," published in 2021 in the Electronic Journal of Mathematical Analysis and Applications
  • "Almost η-Ricci solitons on two classes of almost Kenmotsu manifolds," published in 2024 in the Bulletin of the "Transilvania" University of Braşov. Series III, Mathematics and Computer Science

Frequent coauthors collaborating with Majhi include:

  • D. Kar
  • Dibakar Dey
  • Gopikrishna Panda
  • Sunil Kumar Dhal
  • Manifolds Satisfying

The research contributions demonstrate a combination of theoretical exploration in differential geometry and applications of computational techniques related to data classification and mining. Majhi's involvement spans both advanced mathematical structures such as Sasakian and contact metric manifolds, as well as algorithmic approaches in machine learning contexts.

Best Publications

  • Forming a type i heterostructure in a group iv semiconductor

    Chi On Chui;Prashant Majhi;Wilman Tsai;Jack T. Kavalieros

  • Si tunnel transistors with a novel silicided source and 46mV/dec swing

    Kanghoon Jeon;Wei-Yip Loh;Pratik Patel;Chang Yong Kang

  • Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

    P. D. Kirsch;P. Sivasubramani;J. Huang;C. D. Young

  • Wafer-scale, sub-5 nm junction formation by monolayer doping and conventional spike annealing.

    Johnny C. Ho;Roie Yerushalmi;Gregory Smith;Prashant Majhi

  • InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition

    N. Goel;P. Majhi;C. O. Chui;W. Tsai

  • Work function engineering using lanthanum oxide interfacial layers

    H. N. Alshareef;M. Quevedo-Lopez;H. C. Wen;R. Harris

  • Prospect of tunneling green transistor for 0.1V CMOS

    Chenming Hu;Pratik Patel;Anupama Bowonder;Kanghoon Jeon

  • Nanoscale doping of InAs via sulfur monolayers

    Johnny C. Ho;Johnny C. Ho;Alexandra C. Ford;Alexandra C. Ford;Yu Lun Chueh;Yu Lun Chueh;Paul W. Leu;Paul W. Leu

  • Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO/sub 2/ and HfO/sub 2/

    Ching-Huang Lu;G.M.T. Wong;M.D. Deal;W. Tsai

  • Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)

    B.H. Lee;C.D. Young;R. Choi;J.H. Sim

  • Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains

    Prashant Majhi;Mantu K. Hudait;Jack T. Kavalieros;Ravi Pillarisetty

  • High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric

    N. Goel;P. Majhi;W. Tsai;M. Warusawithana

  • Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

    InJo Ok;H. Kim;M. Zhang;F. Zhu

  • IMPROVEMENT IN CONDUCTIVITY OF GROUP III-V SEMICONDUCTOR DEVICE

    Jack T Kavalieros;Willy Rachmady;Niloy Mukherjee;Marko Radosavljevic

  • Transistors and methods of manufacture thereof

    Hongfa Luan;Prashant Majhi

  • electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress

    S. Chatterjee;Yue Kuo;J. Lu;J.-Y. Tewg

  • Metal gate work function engineering using AlNx interfacial layers

    H. N. Alshareef;H. N. Alshareef;H. F. Luan;K. Choi;H. R. Harris

  • Addressing the gate stack challenge for high mobility In x Ga 1-x As channels for NFETs

    N. Goel;D. Heh;S. Koveshnikov;I. Ok

  • Near band edge Schottky barrier height modulation using high-κ dielectric dipole tuning mechanism

    B. E. Coss;W.-Y. Loh;R. M. Wallace;J. Kim

  • Growth mechanism of TiN film on dielectric films and the effects on the work function

    K. Choi;P. Lysaght;H. Alshareef;C. Huffman

  • Band-Engineered Low PMOS V T with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme

    H.R. Harris;P. Kalra;P. Majhi;M. Hussain

Frequent Co-Authors

Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Paul Kirsch
Paul Kirsch Samsung Austin Semiconductor
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Husam N. Alshareef
Husam N. Alshareef King Abdullah University of Science and Technology
Rino Choi
Rino Choi Inha University
Sanjay K. Banerjee
Sanjay K. Banerjee The University of Texas at Austin
Muhammad Mustafa Hussain
Muhammad Mustafa Hussain Purdue University West Lafayette
Manuel Quevedo-Lopez
Manuel Quevedo-Lopez The University of Texas at Dallas
Uday Shah
Uday Shah Intel (United States)
Brian S. Doyle
Brian S. Doyle Intel (United States)

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