World's Best Scientists 2026 revealed!
Marko Radosavljevic

Marko Radosavljevic

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
57
Citations
15725
World Ranking
1935
National Ranking
761

Materials Science

D-Index
57
Citations
15575
World Ranking
7869
National Ranking
1950

Marko Radosavljevic publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Marko Radosavljevic sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 257 publications — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Marko Radosavljevic D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Marko Radosavljevic sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 57 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Marko Radosavljevic is affiliated with Intel in the United States and has produced notable work within the fields of Engineering and Physics and Astronomy. Their research predominantly focuses on Electrical and Electronic Engineering as well as several specialized subfields including Condensed Matter Physics, Atomic and Molecular Physics and Optics, Materials Chemistry, and Electronic, Optical and Magnetic Materials.

The primary topics covered in Marko Radosavljevic's work include semiconductor materials and devices, GaN-based semiconductor devices and materials, advancements in semiconductor devices and circuit design, ferroelectric and negative capacitance devices, radio frequency integrated circuit design, silicon carbide semiconductor technologies, and ferroelectric and piezoelectric materials.

Frequent publication venues for their research are:

  • IEEE Transactions on Electron Devices
  • 2021 IEEE International Electron Devices Meeting (IEDM)
  • IEEE Microwave and Wireless Technology Letters
  • 2022 International Electron Devices Meeting (IEDM)
  • Nature Communications

Marko Radosavljevic has co-authored multiple papers with several researchers, notably including:

  • Han Wui Then
  • Pratik Koirala
  • Michael Beumer
  • Scott B. Clendenning
  • P. Fischer

Selected recent papers include:

  • "Process integration and future outlook of 2D transistors," 2023, Nature Communications
  • "Toward attojoule switching energy in logic transistors," 2022, Science
  • "Gallium Nitride and Silicon Transistors on 300 mm Silicon Wafers Enabled by 3-D Monolithic Heterogeneous Integration," 2020, IEEE Transactions on Electron Devices
  • "Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration," 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • "Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications," 2023, IEEE Microwave and Wireless Technology Letters

Best Publications

  • Carbon nanotube composites for thermal management

    M. J Biercuk;Mark C Llaguno;M. Radosavljevic;J. K Hyun

  • Carbon nanotube composites for thermal management

    M.J. Biercuk;M.C. Llaguno;M. Radosavljevic;J.K. Hyun

  • Benchmarking nanotechnology for high-performance and low-power logic transistor applications

    R. Chau;S. Datta;M. Doczy;B. Doyle

  • Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors

    M. Radosavljević;M. Freitag;K. V. Thadani;A. T. Johnson

  • Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors

    M. Radosavljevic;M. Freitag;K. V. Thadani;A. T. Johnson

  • Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

    G. Dewey;B. Chu-Kung;J. Boardman;J. M. Fastenau

  • Tunneling versus thermionic emission in one-dimensional semiconductors.

    J. Appenzeller;M. Radosavljević;J. Knoch;Ph. Avouris

  • Block Contact Architectures for Nanoscale Channel Transistors

    Marko Radosavljevic;Amlan Majumdar;Brian S. Doyle;Jack Kavalieros

  • Tri-Gate Transistor Architecture with High-k Gate Dielectrics, Metal Gates and Strain Engineering

    J. Kavalieros;B. Doyle;S. Datta;G. Dewey

  • Drain voltage scaling in carbon nanotube transistors

    M. Radosavljević;S. Heinze;J. Tersoff;Ph. Avouris

  • Advanced high-K gate dielectric for high-performance short-channel In 0.7 Ga 0.3 As quantum well field effect transistors on silicon substrate for low power logic applications

    M. Radosavljevic;B. Chu-Kung;S. Corcoran;G. Dewey

  • IEEE International Electron Devices Meeting

    M. Radosavljevic;T. Ashley;A. Andreev;S. D. Coomber

  • Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology

    Robert Chau;Justin Brask;Suman Datta;Gilbert Dewey

  • Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors

    S. Heinze;M. Radosavljević;J. Tersoff;Ph. Avouris

  • Controlled creation of a carbon nanotube diode by a scanned gate

    Marcus Freitag;Marko Radosavljevic;Yangxin Zhou;A. T. Johnson

  • Catalyst-Free Growth of Ordered Single-Walled Carbon Nanotube Networks

    V. Derycke;R. Martel;M. Radosavljević;and F. M. Ross

  • High performance of potassium n-doped carbon nanotube field-effect transistors

    M. Radosavljević;J. Appenzeller;Ph. Avouris;J. Knoch

  • Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

    M. Radosavljevic;G. Dewey;D. Basu;J. Boardman

  • CMOS implementation of Germanium, III-V nano-wires and nano-belts in grid-wound framework

    M Radosavljevic;R Pillarisetty;G Dewey;N Mukherjee

  • High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III–V CMOS architecture

    R. Pillarisetty;B. Chu-Kung;S. Corcoran;G. Dewey

  • High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

    M. Radosavljevic;T. Ashley;A. Andreev;S.D. Coomber

Frequent Co-Authors

Robert S. Chau
Robert S. Chau Intel (United States)
jack t kavalieros
jack t kavalieros Intel (United States)
matthew v metz
matthew v metz Intel (United States)
Mantu K. Hudait
Mantu K. Hudait Virginia Tech
Suman Datta
Suman Datta Georgia Institute of Technology
Brian S. Doyle
Brian S. Doyle Intel (United States)
Uday Shah
Uday Shah Intel (United States)
Phaedon Avouris
Phaedon Avouris IBM (United States)
Justin K. Brask
Justin K. Brask Intel (United States)
Joerg Appenzeller
Joerg Appenzeller Purdue University West Lafayette

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Related Online Degrees & Career Pathways

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