D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 49 Citations 13,424 153 World Ranking 6061 National Ranking 1658
Electronics and Electrical Engineering D-index 51 Citations 13,962 240 World Ranking 1636 National Ranking 725

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Optoelectronics

Marko Radosavljevic focuses on Optoelectronics, Transistor, Nanotechnology, Field-effect transistor and Carbon nanotube. Marko Radosavljevic has researched Optoelectronics in several fields, including Quantum well and Substrate. His Nanotechnology study combines topics from a wide range of disciplines, such as Schottky diode, Subthreshold slope, Semiconductor and Voltage.

His work deals with themes such as Gate dielectric, Logic gate and Low-power electronics, which intersect with Field-effect transistor. In the field of Carbon nanotube, his study on Nanotube and Carbon nanotube quantum dot overlaps with subjects such as Atomic force microscopy. In general Composite material study, his work on Thermal conductivity and Epoxy often relates to the realm of Thermal and Vickers hardness test, thereby connecting several areas of interest.

His most cited work include:

  • Carbon nanotube composites for thermal management (1444 citations)
  • Carbon nanotube composites for thermal management (1215 citations)
  • Benchmarking nanotechnology for high-performance and low-power logic transistor applications (592 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Transistor, Layer, Substrate and Semiconductor. Marko Radosavljevic is studying Silicon, which is a component of Optoelectronics. Marko Radosavljevic studies Field-effect transistor, a branch of Transistor.

His research on Field-effect transistor also deals with topics like

  • Carbon nanotube which is related to area like Electrical resistivity and conductivity,
  • Nanotechnology, which have a strong connection to Carbon nanotube field-effect transistor and Schottky barrier. His work on Trench as part of general Layer research is frequently linked to Fin, Stack and Group, bridging the gap between disciplines. His Substrate research is multidisciplinary, incorporating elements of Doping and Germanium.

He most often published in these fields:

  • Optoelectronics (81.99%)
  • Transistor (45.21%)
  • Layer (27.59%)

What were the highlights of his more recent work (between 2017-2020)?

  • Optoelectronics (81.99%)
  • Transistor (45.21%)
  • Substrate (23.37%)

In recent papers he was focusing on the following fields of study:

Marko Radosavljevic spends much of his time researching Optoelectronics, Transistor, Substrate, Layer and Epitaxy. The concepts of his Optoelectronics study are interwoven with issues in Gallium nitride, Semiconductor device and Nitride. His primary area of study in Transistor is in the field of NMOS logic.

His Substrate research includes elements of Communication channel and Dielectric. His Layer research is multidisciplinary, relying on both Semiconductor device fabrication, Diamond and Vacancy defect. In his work, Schottky barrier is strongly intertwined with Schottky diode, which is a subfield of Epitaxy.

Between 2017 and 2020, his most popular works were:

  • 3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact power delivery, RF (5G and beyond) and SoC applications (12 citations)
  • GaN devices on engineered silicon substrates (5 citations)
  • Wafer-scale integration of vacancy centers for spin qubits (3 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Integrated circuit

The scientist’s investigation covers issues in Optoelectronics, Epitaxy, Substrate, Transistor and Schottky diode. Marko Radosavljevic has included themes like Layer, Gallium nitride and Radio frequency in his Optoelectronics study. The study incorporates disciplines such as Indium, Doping, Core, Light-emitting diode and OLED in addition to Substrate.

His Transistor research incorporates themes from High-κ dielectric and CMOS. Marko Radosavljevic works mostly in the field of CMOS, limiting it down to concerns involving Metal gate and, occasionally, PMOS logic, RF switch, Moore's law and Inverter. In his research, Semiconductor device and Cathode is intimately related to Schottky barrier, which falls under the overarching field of Schottky diode.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Carbon nanotube composites for thermal management

M. J Biercuk;Mark C Llaguno;M. Radosavljevic;J. K Hyun.
Applied Physics Letters (2002)

2305 Citations

Carbon nanotube composites for thermal management

M. J Biercuk;Mark C Llaguno;M. Radosavljevic;J. K Hyun.
Applied Physics Letters (2002)

2305 Citations

Carbon nanotube composites for thermal management

M.J. Biercuk;M.C. Llaguno;M. Radosavljevic;J.K. Hyun.
arXiv: Materials Science (2002)

2081 Citations

Carbon nanotube composites for thermal management

M.J. Biercuk;M.C. Llaguno;M. Radosavljevic;J.K. Hyun.
arXiv: Materials Science (2002)

2081 Citations

Benchmarking nanotechnology for high-performance and low-power logic transistor applications

R. Chau;S. Datta;M. Doczy;B. Doyle.
IEEE Transactions on Nanotechnology (2005)

852 Citations

Benchmarking nanotechnology for high-performance and low-power logic transistor applications

R. Chau;S. Datta;M. Doczy;B. Doyle.
IEEE Transactions on Nanotechnology (2005)

852 Citations

Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors

M. Radosavljević;M. Freitag;K. V. Thadani;A. T. Johnson.
Nano Letters (2002)

529 Citations

Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors

M. Radosavljević;M. Freitag;K. V. Thadani;A. T. Johnson.
Nano Letters (2002)

529 Citations

Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors

M. Radosavljevic;M. Freitag;K. V. Thadani;A. T. Johnson.
arXiv: Mesoscale and Nanoscale Physics (2002)

435 Citations

Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors

M. Radosavljevic;M. Freitag;K. V. Thadani;A. T. Johnson.
arXiv: Mesoscale and Nanoscale Physics (2002)

435 Citations

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