Marko Radosavljevic focuses on Optoelectronics, Transistor, Nanotechnology, Field-effect transistor and Carbon nanotube. Marko Radosavljevic has researched Optoelectronics in several fields, including Quantum well and Substrate. His Nanotechnology study combines topics from a wide range of disciplines, such as Schottky diode, Subthreshold slope, Semiconductor and Voltage.
His work deals with themes such as Gate dielectric, Logic gate and Low-power electronics, which intersect with Field-effect transistor. In the field of Carbon nanotube, his study on Nanotube and Carbon nanotube quantum dot overlaps with subjects such as Atomic force microscopy. In general Composite material study, his work on Thermal conductivity and Epoxy often relates to the realm of Thermal and Vickers hardness test, thereby connecting several areas of interest.
His main research concerns Optoelectronics, Transistor, Layer, Substrate and Semiconductor. Marko Radosavljevic is studying Silicon, which is a component of Optoelectronics. Marko Radosavljevic studies Field-effect transistor, a branch of Transistor.
His research on Field-effect transistor also deals with topics like
Marko Radosavljevic spends much of his time researching Optoelectronics, Transistor, Substrate, Layer and Epitaxy. The concepts of his Optoelectronics study are interwoven with issues in Gallium nitride, Semiconductor device and Nitride. His primary area of study in Transistor is in the field of NMOS logic.
His Substrate research includes elements of Communication channel and Dielectric. His Layer research is multidisciplinary, relying on both Semiconductor device fabrication, Diamond and Vacancy defect. In his work, Schottky barrier is strongly intertwined with Schottky diode, which is a subfield of Epitaxy.
The scientist’s investigation covers issues in Optoelectronics, Epitaxy, Substrate, Transistor and Schottky diode. Marko Radosavljevic has included themes like Layer, Gallium nitride and Radio frequency in his Optoelectronics study. The study incorporates disciplines such as Indium, Doping, Core, Light-emitting diode and OLED in addition to Substrate.
His Transistor research incorporates themes from High-κ dielectric and CMOS. Marko Radosavljevic works mostly in the field of CMOS, limiting it down to concerns involving Metal gate and, occasionally, PMOS logic, RF switch, Moore's law and Inverter. In his research, Semiconductor device and Cathode is intimately related to Schottky barrier, which falls under the overarching field of Schottky diode.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Carbon nanotube composites for thermal management
M. J Biercuk;Mark C Llaguno;M. Radosavljevic;J. K Hyun.
Applied Physics Letters (2002)
Carbon nanotube composites for thermal management
M. J Biercuk;Mark C Llaguno;M. Radosavljevic;J. K Hyun.
Applied Physics Letters (2002)
Carbon nanotube composites for thermal management
M.J. Biercuk;M.C. Llaguno;M. Radosavljevic;J.K. Hyun.
arXiv: Materials Science (2002)
Carbon nanotube composites for thermal management
M.J. Biercuk;M.C. Llaguno;M. Radosavljevic;J.K. Hyun.
arXiv: Materials Science (2002)
Benchmarking nanotechnology for high-performance and low-power logic transistor applications
R. Chau;S. Datta;M. Doczy;B. Doyle.
IEEE Transactions on Nanotechnology (2005)
Benchmarking nanotechnology for high-performance and low-power logic transistor applications
R. Chau;S. Datta;M. Doczy;B. Doyle.
IEEE Transactions on Nanotechnology (2005)
Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors
M. Radosavljević;M. Freitag;K. V. Thadani;A. T. Johnson.
Nano Letters (2002)
Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors
M. Radosavljević;M. Freitag;K. V. Thadani;A. T. Johnson.
Nano Letters (2002)
Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors
M. Radosavljevic;M. Freitag;K. V. Thadani;A. T. Johnson.
arXiv: Mesoscale and Nanoscale Physics (2002)
Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors
M. Radosavljevic;M. Freitag;K. V. Thadani;A. T. Johnson.
arXiv: Mesoscale and Nanoscale Physics (2002)
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