The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Tahir Ghani sits on this spectrum.
This scientist: 181 publications — 23rd percentile
23% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Tahir Ghani sits on this spectrum.
This scientist: 55 D-Index — 69th percentile
69% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Tahir Ghani is affiliated with Intel in the United States and has contributed to multiple research fields, primarily focused on engineering and medicine. Their work spans several areas including electrical and electronic engineering, public health, environmental and occupational health, renewable energy, sustainability and the environment, anesthesiology and pain medicine, and materials chemistry.
The scientist's research topics cover a diverse range of subjects. These include advancements in semiconductor devices and circuit design, semiconductor materials and devices, advanced memory and neural computing, reproductive health and contraception, anesthesia and sedative agents, pregnancy and medication impact, and TiO2 photocatalysis and solar cells.
Recent publications by Tahir Ghani include:
The scientist has collaborated frequently with several co-authors, including Wei Cao, Huiming Bu, M. Vinet, Min Cao, and Shinichi Takagi.
Publications appear frequently in journals such as Nature, DOAJ (Directory of Open Access Journals), International Journal of Infertility & Fetal Medicine, and Materials Chemistry and Physics.
Awards received by Tahir Ghani include membership in the National Academy of Engineering awarded in 2015 for the development of transistor technologies for logic products. In 2012, they received the IEEE Jun-ichi Nishizawa Medal for sustained leadership in developing innovative transistor technologies for advanced logic products. Additionally, Ghani was named an IEEE Fellow in 2009 for contributions to deep submicron metal oxide semiconductor transistor development for microprocessors.
K. Mistry;C. Allen;C. Auth;B. Beattie
T. Ghani;M. Armstrong;C. Auth;M. Bost
C. Auth;C. Allen;A. Blattner;D. Bergstrom
S.E. Thompson;M. Armstrong;C. Auth;M. Alavi
S.E. Thompson;M. Armstrong;C. Auth;S. Cea
Anand Murthy;Robert S. Chau;Tahir Ghani;Kaizad R. Mistry
S. Natarajan;M. Agostinelli;S. Akbar;M. Bost
M.T. Bohr;R.S. Chau;T. Ghani;K. Mistry
C. Auth;A. Cappellani;J.-S. Chun;A. Dalis
Jan Chia-Hong;Tsai Julie A;Yang Simon;Ghani Tahir
Unknown
S. Thompson;N. Anand;M. Armstrong;C. Auth
P. Packan;S. Akbar;M. Armstrong;D. Bergstrom
S. Natarajan;M. Armstrong;M. Bost;R. Brain
ティー． ボーア，マーク;T Bohr Mark;ガーニ，タヒル;Tahir Ghani
S.E. Thompson;R.S. Chau;T. Ghani;K. Mistry
Anand S. Murthy;Daniel Bourne Aubertine;Tahir Ghani;Abhijit Jayant Pethe
T. Ghani;K. Mistry;P. Packan;S. Thompson
A. Keshavarzi;S. Ma;S. Narendra;B. Bloechel
Bohr Mark;Ghani Tahir;Cea Stephen;Mistry Kaizad
Glass Glenn A;Murthy Anand S;Ghani Tahir
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