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Dureseti Chidambarrao

Dureseti Chidambarrao

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
46
Citations
7854
World Ranking
3408
National Ranking
1251

Overview

Dureseti Chidambarrao is affiliated with IBM in the United States. Their research primarily focuses on areas within Computer Science and Engineering, with notable subfields including Hardware and Architecture, Computer Networks and Communications, and Electrical and Electronic Engineering.

Their work covers several main topics such as Parallel Computing and Optimization Techniques, Interconnection Networks and Systems, and Low-power high-performance VLSI design.

Dureseti Chidambarrao has contributed to multiple publications. Some recent papers include:

  • Cores, Cache, Content, and Characterization: IBM's Second Generation 14-nm Product, z15 (2020), published in IEEE Journal of Solid-State Circuits
  • IBM z15: Physical design improvements to significantly increase content in the same technology (2020), published in IBM Journal of Research and Development
  • IBM Telum II Microprocessor: 5.5 GHz With On-Die AI and Data Processing, and Design-Technology Co-Optimizations for Power, Area, and Reliability (2025), published in IEEE Journal of Solid-State Circuits

Frequent collaborators in their research include David Wolpert, Christopher Berry, Mark Cichanowski, Adam Jatkowski, and John Isakson.

The venues where Dureseti Chidambarrao's work is often published consist of:

  • IEEE Journal of Solid-State Circuits
  • IBM Journal of Research and Development

Best Publications

  • Structure and method of making strained semiconductor CMOS transistors

    Huajie Chen;Dureseti Chidambarrao

  • Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing

    H.S. Yang;R. Malik;S. Narasimha;Y. Li

  • Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model

    MeiKei Ieong;P.M. Solomon;S.E. Laux;H.-S.P. Wong

  • High performance strained silicon finfets device and method for forming same

    Stephen W. Bedell;Kevin K. Chan;Dureseti Chidambarrao;Silke H. Christiansen

  • Methods and system for analysis and management of parametric yield

    James A. Culp;Paul Chang;Dureseti Chidambarrao;Praveen Elakkumanan

  • Structure and method to improve channel mobility by gate electrode stress modification

    Michael P. Belyansky;Dureseti Chidambarrao;Omer H. Dokumaci;Bruce B. Doris

  • Stress leading space layer

    Chadanbalao D;Documach O H;Duoris B B

  • Vertical Fin-FET MOS devices

    Jochen Beintner;Dureseti Chidambarrao;Ramachandra Divkaruni

  • Field effect transistor with stressed channel and producing method thereof

    Doris Brews B;Zidambarao Dursedi

  • SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

    Chidambarrao Dureseti;Dokumaci Omer H;Gluschenkov Oleg G

  • High performance 14nm SOI FinFET CMOS technology with 0.0174µm 2 embedded DRAM and 15 levels of Cu metallization

    C-H. Lin;B. Greene;S. Narasimha;J. Cai

  • Strained finfet cmos device structures

    Bruce B. Doris;Dureseti Chidambarrao;Meikei Ieong;Jack A. Mandelman

  • Structure of vertical strained silicon devices

    Kangguo Cheng;Dureseti Chidambarrao;Rama Divakaruni;Oleg G. Gluschenkov

  • High performance cmos device structures and method of manufacture

    Bruce B. Doris;Dureseti Chidambarrao;Suk Hoon Ku

  • Structure and method for improved stress and yield in pFETS with embedded SiGe source/drain regions

    Dureseti Chidambarrao;Brian J. Greene

  • Strained silicon NMOS devices with embedded source/drain

    Dureseti Chidambarrao;Effendi Leobandung;Anda C. Mocuta;Haining S. Yang

  • Method of manufacture of FinFET devices with T-shaped fins and devices manufactured thereby

    Dureseti Chidambarrao;Omer Dokumaci

  • Strain effects on device characteristics: Implementation in drift-diffusion simulators

    J.L. Egley;D. Chidambarrao

  • Structure and method for mobility enhanced mosfets with unalloyed silicide

    Yaocheng Liu;Dureseti Chidambarrao;Oleg Gluschenkov;Judson R. Holt

  • Silicon device on Si:C-OI and SGOI and method of manufacture

    Dureseti Chidambarrao;Omer H. Dokumaci;Oleg G. Gluschenkov

Frequent Co-Authors

Oleg Gluschenkov
Oleg Gluschenkov IBM (United States)
Jack A. Mandelman
Jack A. Mandelman Independent Scientist / Consultant, US
Huilong Zhu
Huilong Zhu Chinese Academy of Sciences
Bruce B. Doris
Bruce B. Doris IBM (United States)
Carl J. Radens
Carl J. Radens IBM (United States)
Dominic J. Schepis
Dominic J. Schepis Global Foundries
Meikei Ieong
Meikei Ieong Simbury Limited
Jeffrey W. Sleight
Jeffrey W. Sleight IBM (United States)
Kangguo Cheng
Kangguo Cheng IBM (United States)
Gregory G. Freeman
Gregory G. Freeman IBM (United States)

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