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Dureseti Chidambarrao

Dureseti Chidambarrao

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
46
Citations
7854
World Ranking
3408
National Ranking
1252

Dureseti Chidambarrao publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Dureseti Chidambarrao sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 227 publications — 38th percentile

38% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Dureseti Chidambarrao D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Dureseti Chidambarrao sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 46 D-Index — 52nd percentile

52% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Dureseti Chidambarrao is affiliated with IBM in the United States. Their research primarily focuses on areas within Computer Science and Engineering, with notable subfields including Hardware and Architecture, Computer Networks and Communications, and Electrical and Electronic Engineering.

Their work covers several main topics such as Parallel Computing and Optimization Techniques, Interconnection Networks and Systems, and Low-power high-performance VLSI design.

Dureseti Chidambarrao has contributed to multiple publications. Some recent papers include:

  • Cores, Cache, Content, and Characterization: IBM's Second Generation 14-nm Product, z15 (2020), published in IEEE Journal of Solid-State Circuits
  • IBM z15: Physical design improvements to significantly increase content in the same technology (2020), published in IBM Journal of Research and Development
  • IBM Telum II Microprocessor: 5.5 GHz With On-Die AI and Data Processing, and Design-Technology Co-Optimizations for Power, Area, and Reliability (2025), published in IEEE Journal of Solid-State Circuits

Frequent collaborators in their research include David Wolpert, Christopher Berry, Mark Cichanowski, Adam Jatkowski, and John Isakson.

The venues where Dureseti Chidambarrao's work is often published consist of:

  • IEEE Journal of Solid-State Circuits
  • IBM Journal of Research and Development

Best Publications

  • Structure and method of making strained semiconductor CMOS transistors

    Huajie Chen;Dureseti Chidambarrao

  • Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing

    H.S. Yang;R. Malik;S. Narasimha;Y. Li

  • Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model

    MeiKei Ieong;P.M. Solomon;S.E. Laux;H.-S.P. Wong

  • High performance strained silicon finfets device and method for forming same

    Stephen W. Bedell;Kevin K. Chan;Dureseti Chidambarrao;Silke H. Christiansen

  • Methods and system for analysis and management of parametric yield

    James A. Culp;Paul Chang;Dureseti Chidambarrao;Praveen Elakkumanan

  • Structure and method to improve channel mobility by gate electrode stress modification

    Michael P. Belyansky;Dureseti Chidambarrao;Omer H. Dokumaci;Bruce B. Doris

  • Stress leading space layer

    Chadanbalao D;Documach O H;Duoris B B

  • Vertical Fin-FET MOS devices

    Jochen Beintner;Dureseti Chidambarrao;Ramachandra Divkaruni

  • Field effect transistor with stressed channel and producing method thereof

    Doris Brews B;Zidambarao Dursedi

  • SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

    Chidambarrao Dureseti;Dokumaci Omer H;Gluschenkov Oleg G

  • High performance 14nm SOI FinFET CMOS technology with 0.0174µm 2 embedded DRAM and 15 levels of Cu metallization

    C-H. Lin;B. Greene;S. Narasimha;J. Cai

  • Strained finfet cmos device structures

    Bruce B. Doris;Dureseti Chidambarrao;Meikei Ieong;Jack A. Mandelman

  • Structure of vertical strained silicon devices

    Kangguo Cheng;Dureseti Chidambarrao;Rama Divakaruni;Oleg G. Gluschenkov

  • High performance cmos device structures and method of manufacture

    Bruce B. Doris;Dureseti Chidambarrao;Suk Hoon Ku

  • Structure and method for improved stress and yield in pFETS with embedded SiGe source/drain regions

    Dureseti Chidambarrao;Brian J. Greene

  • Strained silicon NMOS devices with embedded source/drain

    Dureseti Chidambarrao;Effendi Leobandung;Anda C. Mocuta;Haining S. Yang

  • Method of manufacture of FinFET devices with T-shaped fins and devices manufactured thereby

    Dureseti Chidambarrao;Omer Dokumaci

  • Strain effects on device characteristics: Implementation in drift-diffusion simulators

    J.L. Egley;D. Chidambarrao

  • Structure and method for mobility enhanced mosfets with unalloyed silicide

    Yaocheng Liu;Dureseti Chidambarrao;Oleg Gluschenkov;Judson R. Holt

  • Silicon device on Si:C-OI and SGOI and method of manufacture

    Dureseti Chidambarrao;Omer H. Dokumaci;Oleg G. Gluschenkov

Frequent Co-Authors

Oleg Gluschenkov
Oleg Gluschenkov IBM (United States)
Jack A. Mandelman
Jack A. Mandelman Independent Scientist / Consultant, US
Huilong Zhu
Huilong Zhu Chinese Academy of Sciences
Bruce B. Doris
Bruce B. Doris IBM (United States)
Carl J. Radens
Carl J. Radens IBM (United States)
Dominic J. Schepis
Dominic J. Schepis Global Foundries
Meikei Ieong
Meikei Ieong Simbury Limited
Jeffrey W. Sleight
Jeffrey W. Sleight IBM (United States)
Kangguo Cheng
Kangguo Cheng IBM (United States)
Gregory G. Freeman
Gregory G. Freeman IBM (United States)

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