World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
42
Citations
6789
World Ranking
4136
National Ranking
1480

Overview

Stephen W. Bedell is affiliated with IBM in the United States. Their research primarily spans the fields of Physics and Astronomy as well as Engineering, with significant contributions to both areas.

The scientist's work focuses on several subfields, including Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Artificial Intelligence, Condensed Matter Physics, and Biomedical Engineering. Their research topics encompass a broad range of quantum and semiconductor-related areas such as Quantum and Electron Transport Phenomena, Quantum Information and Cryptography, Semiconductor Quantum Structures and Devices, Photonic and Optical Devices, Quantum Computing Algorithms and Architecture, Advancements in Semiconductor Devices and Circuit Design, and GaN-based Semiconductor Devices and Materials.

Frequent co-authors in Stephen W. Bedell's work include Stephan Paredes, M. Mergenthaler, Andreas Fuhrer, L. Massai, and Felix Schupp.

The scientist has published extensively in several venues, with the most common publication platforms being arXiv (Cornell University), Advanced Materials, Nature Materials, Communications Materials, and PRX Quantum.

  • "Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity", 2024, Nature Materials
  • "Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures", 2024, Communications Materials
  • "Dust-Sized High-Power-Density Photovoltaic Cells on Si and SOI Substrates for Wafer-Level-Packaged Small Edge Computers", 2020, Advanced Materials
  • "Direct Microwave Spectroscopy of Andreev Bound States in Planar Ge Josephson Junctions", 2024, PRX Quantum
  • "Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity", 2023, arXiv (Cornell University)

Best Publications

  • Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

    Jeehwan Kim;Can Bayram;Hongsik Park;Cheng Wei Cheng

  • Layer-Resolved Graphene Transfer via Engineered Strain Layers

    Jeehwan Kim;Hongsik Park;James B. Hannon;Stephen W. Bedell

  • Germanium channel MOSFETs: opportunities and challenges

    H. Shang;M. M. Frank;E. P. Gusev;J. O. Chu

  • High performance strained silicon finfets device and method for forming same

    Stephen W. Bedell;Kevin K. Chan;Dureseti Chidambarrao;Silke H. Christiansen

  • Spalling methods to form multi-junction photovoltaic structure and photovoltaic device

    Bedell Stephen W;Sadana Devendra K;Shahrjerdi Davood

  • CMOS-integrated high-speed MSM germanium waveguide photodetector

    Solomon Assefa;Fengnian Xia;Stephen W. Bedell;Ying Zhang

  • Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic.

    Davood Shahrjerdi;Stephen W. Bedell

  • Kerf-Less Removal of Si, Ge, and III–V Layers by Controlled Spalling to Enable Low-Cost PV Technologies

    S. W. Bedell;D. Shahrjerdi;B. Hekmatshoar;K. Fogel

  • Techniques for Layer Transfer Processing

    Stephen W. Bedell;Keith Edward Fogel;Bruce Kenneth Furman;Sampath Purushothaman

  • Fabricating Method for Nanowire Mesh Device

    Chang Josephine;Stephen Bedell;Chang Paul;Michael Guillorn

  • Layer transfer by controlled spalling

    Stephen W Bedell;Keith Fogel;Paul Lauro;Davood Shahrjerdi

  • A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

    S. Krishnan;U. Kwon;N. Moumen;M.W. Stoker

  • High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology

    D. Shahrjerdi;S. W. Bedell;C. Ebert;C. Bayram

  • Strain scaling for CMOS

    S. W. Bedell;A. Khakifirooz;D. K. Sadana

  • Ion implantation combined with in situ or ex situ heat treatment for improved field effect transistors

    Stephen W. Bedell;Joel P. Desouza;Zhibin Ren;Alexander Reznicek

  • METHOD OF CREATING HIGH-QUALITY RELAXED SiGe-ON-INSULATOR FOR STRAINED Si CMOS APPLICATIONS

    Stephen W. Bedell;Jack O. Chu;Keith E. Fogel;Stephen J. Koester

  • Substrate material and heterostructure

    Bedell Stephen W;Fogel Keith E;Sadana Devendra A

  • Low cost soi substrates for monolithic solar cells

    Stephen W. Bedell;Joel P. de Souza;Keith E. Fogel;Harold J. Hovel

  • Ultralight High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic

    Davood Shahrjerdi;Stephen W. Bedell;Can Bayram;Cristina C. Lubguban

  • Relaxed, low-defect SGOI for strained Si CMOS applications

    Paul D. Agnello;Stephen W. Bedell;Robert H. Dennard;Anthony G. Domenicucci

  • Investigation of surface blistering of hydrogen implanted crystals

    Stephen W. Bedell;William A. Lanford

Frequent Co-Authors

Devendra K. Sadana
Devendra K. Sadana IBM (United States)
Davood Shahrjerdi
Davood Shahrjerdi New York University
Ghavam G. Shahidi
Ghavam G. Shahidi IBM (United States)
John A. Ott
John A. Ott IBM (United States)
Alexander Reznicek
Alexander Reznicek IBM (United States)
Katherine L. Saenger
Katherine L. Saenger Auburn University
Ali Khakifirooz
Ali Khakifirooz Intel (United States)
Bruce B. Doris
Bruce B. Doris IBM (United States)
Kangguo Cheng
Kangguo Cheng IBM (United States)

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