2019 - IEEE Fellow For contributions to fully depleted Silicon-on-Insulator Complementary Metal-Oxide Semiconductor process technology
Optoelectronics, Semiconductor device, Electrical engineering, Layer and Semiconductor are his primary areas of study. His Optoelectronics research incorporates elements of Substrate, Gate oxide, Electronic engineering and Epitaxy. Kangguo Cheng combines subjects such as Fin, High-κ dielectric, Nanowire and Substrate with his study of Semiconductor device.
His biological study deals with issues like Transistor, which deal with fields such as Etching and Air gap. His Semiconductor research is multidisciplinary, incorporating elements of Structural engineering, Doping, Dopant and Insulator. Within one scientific family, Kangguo Cheng focuses on topics pertaining to Trench under Dielectric, and may sometimes address concerns connected to Geotechnical engineering.
Kangguo Cheng spends much of his time researching Optoelectronics, Layer, Semiconductor device, Semiconductor and Transistor. His biological study spans a wide range of topics, including Electronic engineering, Substrate, Electrical engineering and Epitaxy. His Layer study combines topics in areas such as Fin, Doping and Field-effect transistor.
His Semiconductor device research integrates issues from Nanowire, Dielectric layer, Etching, Electrical conductor and Gate stack. His work deals with themes such as Silicon on insulator, Fin and Insulator, which intersect with Semiconductor. His Transistor study incorporates themes from Nanosheet and CMOS.
Kangguo Cheng mostly deals with Optoelectronics, Transistor, Semiconductor device, Layer and Dielectric. His research on Optoelectronics focuses in particular on Semiconductor. His studies in Transistor integrate themes in fields like Parasitic capacitance, Trench and Epitaxy.
His work carried out in the field of Semiconductor device brings together such families of science as Semiconductor materials, Second source, Dielectric layer, Silicon-germanium and Insulator. His study in Layer is interdisciplinary in nature, drawing from both Oxide and Doping. The study incorporates disciplines such as Air gap and Resistive random-access memory in addition to Dielectric.
Kangguo Cheng focuses on Optoelectronics, Transistor, Semiconductor device, Layer and Dielectric. The concepts of his Optoelectronics study are interwoven with issues in Nanosheet, Substrate, Field-effect transistor, Fin and Substrate. His Transistor research includes themes of Parasitic capacitance, Semiconductor and Epitaxy.
His research integrates issues of Resistor and Electrical engineering, Insulator in his study of Semiconductor device. His Layer study integrates concerns from other disciplines, such as Semiconductor materials, Doping and Band gap. His research in Dielectric intersects with topics in Semiconductor structure, Trench, Conductive materials and Air gap.
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Smooth and vertical semiconductor fin structure
Kangguo Cheng;Bruce B. Doris;Johnathan E. Faltermeier;Ying Zhang.
(2008)
Integrated circuit with a thin body field effect transistor and capacitor
Kangguo Cheng;Bruce Doris;Ali Khakifirooz;Ghavam G. Shahidi.
(2012)
Extrem-dünner-Halbleiter-auf-Isolator(ETSOI)-FET mit einem Rück-Gate und verringerter Parasitärkapazität sowie Verfahren zu dessen Herstellung
Khakifirooz Ali;Doris Bruce B;Cheng Kangguo.
(2012)
High-k/metal gate cmos finfet with improved pfet threshold voltage
Veeraraghavan S. Basker;Kangguo Cheng;Bruce B. Doris;Johnathan E. Faltermeier.
(2009)
Semiconductor fin isolation by a well trapping fin portion
Henry K. Utomo;Kangguo Cheng;Ramachandra Divakaruni;Ravikumar Ramachandran.
(2013)
Structure of vertical strained silicon devices
Kangguo Cheng;Dureseti Chidambarrao;Rama Divakaruni;Oleg G. Gluschenkov.
(2003)
Method for fabricating an integrated circuit
Bruce Doris;Ying Zhang;Kangguo Cheng.
(2010)
Method of forming a bottle-shaped trench by ion implantation
Kangguo Cheng;Johnathan E. Faltermeier;Carl Radens.
(2008)
Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation
Kangguo Cheng;Bruce B. Doris;Pranita Kulkarni;Ghavam Shahidi.
(2009)
FinFET spacer formation by oriented implantation
Veeraraghavan S. Basker;Kangguo Cheng;Bruce B. Doris;Johnathan E. Faltermeier.
(2012)
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