World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
56
Citations
13793
World Ranking
2049
National Ranking
806

Materials Science

D-Index
58
Citations
14424
World Ranking
7598
National Ranking
1884

Kangguo Cheng publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Kangguo Cheng sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 1,095 publications — 99th percentile

99% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Kangguo Cheng D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Kangguo Cheng sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 56 D-Index — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2019 - IEEE Fellow For contributions to fully depleted Silicon-on-Insulator Complementary Metal-Oxide Semiconductor process technology

Overview

Kangguo Cheng is affiliated with IBM in the United States and has contributed to the field of engineering with a focus on electrical and electronic engineering. Their research intersects multiple subfields, including spectroscopy, materials chemistry, artificial intelligence, and analytical chemistry.

Cheng's work spans several main topics, which include:

  • CCD and CMOS Imaging Sensors
  • Analytical Chemistry and Chromatography
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Photonic and Optical Devices
  • Advanced Memory and Neural Computing
  • Phase-change materials and chalcogenides

Their publication record covers various reputable venues such as:

  • IEEE Transactions on Electron Devices
  • Advanced Intelligent Systems
  • Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials
  • 2021 IEEE International Electron Devices Meeting (IEDM)
  • SSRN Electronic Journal

Some notable recent papers by Kangguo Cheng include:

  • Improved Air Spacer for Highly Scaled CMOS Technology, 2020, IEEE Transactions on Electron Devices
  • Impact of Phase-Change Memory Flicker Noise and Weight Drift on Analog Hardware Inference for Large-Scale Deep Learning Networks, 2022, Advanced Intelligent Systems
  • Impact of PCM Flicker Noise and Weight Drift on Analog Hardware Inference for state-of-the-art Deep Learning Networks, 2020, Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials
  • Award Presentations [Various awards], 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • In-Depth Exploration of 2,5-Dimethylpyrazine in Traditional Charcoal-Grilled Lamb: A Study Using Food and Model Reaction Systems and Density Functional Theory, 2025, SSRN Electronic Journal

Kangguo Cheng frequently collaborates with several co-authors. Those most frequently working alongside Cheng include:

  • Zuoguang Liu
  • Tenko Yamashita
  • Chanro Park
  • Juntao Li
  • S. Nguyen

Throughout their career, Cheng has obtained recognition including the IEEE Fellow award in 2019. This honor was granted for contributions to fully depleted Silicon-on-Insulator Complementary Metal-Oxide Semiconductor process technology.

Best Publications

  • Smooth and vertical semiconductor fin structure

    Kangguo Cheng;Bruce B. Doris;Johnathan E. Faltermeier;Ying Zhang

  • Integrated circuit with a thin body field effect transistor and capacitor

    Kangguo Cheng;Bruce Doris;Ali Khakifirooz;Ghavam G. Shahidi

  • Extrem-dünner-Halbleiter-auf-Isolator(ETSOI)-FET mit einem Rück-Gate und verringerter Parasitärkapazität sowie Verfahren zu dessen Herstellung

    Khakifirooz Ali;Doris Bruce B;Cheng Kangguo

  • High-k/metal gate cmos finfet with improved pfet threshold voltage

    Veeraraghavan S. Basker;Kangguo Cheng;Bruce B. Doris;Johnathan E. Faltermeier

  • Semiconductor fin isolation by a well trapping fin portion

    Henry K. Utomo;Kangguo Cheng;Ramachandra Divakaruni;Ravikumar Ramachandran

  • Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications

    K. Cheng;A. Khakifirooz;P. Kulkarni;S. Ponoth

  • Structure of vertical strained silicon devices

    Kangguo Cheng;Dureseti Chidambarrao;Rama Divakaruni;Oleg G. Gluschenkov

  • Method for fabricating an integrated circuit

    Bruce Doris;Ying Zhang;Kangguo Cheng

  • Method of forming a bottle-shaped trench by ion implantation

    Kangguo Cheng;Johnathan E. Faltermeier;Carl Radens

  • Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation

    Kangguo Cheng;Bruce B. Doris;Pranita Kulkarni;Ghavam Shahidi

  • FinFET spacer formation by oriented implantation

    Veeraraghavan S. Basker;Kangguo Cheng;Bruce B. Doris;Johnathan E. Faltermeier

  • Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures

    Kangguo Cheng;Louis Lu-Chen Hsu;Jack Allan Mandelman

  • High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET

    K. Cheng;A. Khakifirooz;N. Loubet;S. Luning

  • Integrated circuits including finfet devices and methods for fabricating the same

    Ruilong Xie;Xiuyu Cai;Ali Khakifirooz;Kangguo Cheng

  • Finfet structures having silicon germanium and silicon fins

    Kangguo Cheng;Bruce B. Doris;Ali Khakifirooz;Alexander Reznicek

  • Nanosheet MOSFET with full-height air-gap spacer

    Kangguo Cheng;Bruce B. Doris;Michael A. Guillorn;Xin Miao

  • PIN diode and method for making PIN diode and forming semiconductor fin structure

    Kangguo Cheng;Lu-Chen Hsu Louis;Allan Mandelman Jack

  • Methods for forming semiconductor structures with buried isolation collars and semiconductor structures formed by these methods

    Kangguo Cheng;Jack Allan Mandelman

  • Vertical transistor with air-gap spacer

    Kangguo Cheng;Tak H. Ning

  • Borderless Contacts For Semiconductor Devices

    Kangguo Cheng;Bruce B. Doris;Keith Kwong Hon Wong

Frequent Co-Authors

Ali Khakifirooz
Ali Khakifirooz Intel (United States)
Alexander Reznicek
Alexander Reznicek IBM (United States)
Bruce B. Doris
Bruce B. Doris IBM (United States)
Ruilong Xie
Ruilong Xie IBM (United States)
Ghavam G. Shahidi
Ghavam G. Shahidi IBM (United States)
Qing Cao
Qing Cao IBM (United States)
Jack A. Mandelman
Jack A. Mandelman Independent Scientist / Consultant, US
Carl J. Radens
Carl J. Radens IBM (United States)
Louis L. Hsu
Louis L. Hsu IBM (United States)
William R. Tonti
William R. Tonti Institute of Electrical and Electronics Engineers

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