World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
56
Citations
13793
World Ranking
2049
National Ranking
805

Materials Science

D-Index
58
Citations
14424
World Ranking
7600
National Ranking
1886

Research.com Recognitions

  • 2019 - IEEE Fellow For contributions to fully depleted Silicon-on-Insulator Complementary Metal-Oxide Semiconductor process technology

Overview

Kangguo Cheng is affiliated with IBM in the United States and has contributed to the field of engineering with a focus on electrical and electronic engineering. Their research intersects multiple subfields, including spectroscopy, materials chemistry, artificial intelligence, and analytical chemistry.

Cheng's work spans several main topics, which include:

  • CCD and CMOS Imaging Sensors
  • Analytical Chemistry and Chromatography
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Photonic and Optical Devices
  • Advanced Memory and Neural Computing
  • Phase-change materials and chalcogenides

Their publication record covers various reputable venues such as:

  • IEEE Transactions on Electron Devices
  • Advanced Intelligent Systems
  • Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials
  • 2021 IEEE International Electron Devices Meeting (IEDM)
  • SSRN Electronic Journal

Some notable recent papers by Kangguo Cheng include:

  • Improved Air Spacer for Highly Scaled CMOS Technology, 2020, IEEE Transactions on Electron Devices
  • Impact of Phase-Change Memory Flicker Noise and Weight Drift on Analog Hardware Inference for Large-Scale Deep Learning Networks, 2022, Advanced Intelligent Systems
  • Impact of PCM Flicker Noise and Weight Drift on Analog Hardware Inference for state-of-the-art Deep Learning Networks, 2020, Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials
  • Award Presentations [Various awards], 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • In-Depth Exploration of 2,5-Dimethylpyrazine in Traditional Charcoal-Grilled Lamb: A Study Using Food and Model Reaction Systems and Density Functional Theory, 2025, SSRN Electronic Journal

Kangguo Cheng frequently collaborates with several co-authors. Those most frequently working alongside Cheng include:

  • Zuoguang Liu
  • Tenko Yamashita
  • Chanro Park
  • Juntao Li
  • S. Nguyen

Throughout their career, Cheng has obtained recognition including the IEEE Fellow award in 2019. This honor was granted for contributions to fully depleted Silicon-on-Insulator Complementary Metal-Oxide Semiconductor process technology.

Best Publications

  • Smooth and vertical semiconductor fin structure

    Kangguo Cheng;Bruce B. Doris;Johnathan E. Faltermeier;Ying Zhang

  • Integrated circuit with a thin body field effect transistor and capacitor

    Kangguo Cheng;Bruce Doris;Ali Khakifirooz;Ghavam G. Shahidi

  • Extrem-dünner-Halbleiter-auf-Isolator(ETSOI)-FET mit einem Rück-Gate und verringerter Parasitärkapazität sowie Verfahren zu dessen Herstellung

    Khakifirooz Ali;Doris Bruce B;Cheng Kangguo

  • High-k/metal gate cmos finfet with improved pfet threshold voltage

    Veeraraghavan S. Basker;Kangguo Cheng;Bruce B. Doris;Johnathan E. Faltermeier

  • Semiconductor fin isolation by a well trapping fin portion

    Henry K. Utomo;Kangguo Cheng;Ramachandra Divakaruni;Ravikumar Ramachandran

  • Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications

    K. Cheng;A. Khakifirooz;P. Kulkarni;S. Ponoth

  • Structure of vertical strained silicon devices

    Kangguo Cheng;Dureseti Chidambarrao;Rama Divakaruni;Oleg G. Gluschenkov

  • Method for fabricating an integrated circuit

    Bruce Doris;Ying Zhang;Kangguo Cheng

  • Method of forming a bottle-shaped trench by ion implantation

    Kangguo Cheng;Johnathan E. Faltermeier;Carl Radens

  • Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation

    Kangguo Cheng;Bruce B. Doris;Pranita Kulkarni;Ghavam Shahidi

  • FinFET spacer formation by oriented implantation

    Veeraraghavan S. Basker;Kangguo Cheng;Bruce B. Doris;Johnathan E. Faltermeier

  • Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures

    Kangguo Cheng;Louis Lu-Chen Hsu;Jack Allan Mandelman

  • High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET

    K. Cheng;A. Khakifirooz;N. Loubet;S. Luning

  • Integrated circuits including finfet devices and methods for fabricating the same

    Ruilong Xie;Xiuyu Cai;Ali Khakifirooz;Kangguo Cheng

  • Finfet structures having silicon germanium and silicon fins

    Kangguo Cheng;Bruce B. Doris;Ali Khakifirooz;Alexander Reznicek

  • Nanosheet MOSFET with full-height air-gap spacer

    Kangguo Cheng;Bruce B. Doris;Michael A. Guillorn;Xin Miao

  • PIN diode and method for making PIN diode and forming semiconductor fin structure

    Kangguo Cheng;Lu-Chen Hsu Louis;Allan Mandelman Jack

  • Methods for forming semiconductor structures with buried isolation collars and semiconductor structures formed by these methods

    Kangguo Cheng;Jack Allan Mandelman

  • Vertical transistor with air-gap spacer

    Kangguo Cheng;Tak H. Ning

  • Borderless Contacts For Semiconductor Devices

    Kangguo Cheng;Bruce B. Doris;Keith Kwong Hon Wong

Frequent Co-Authors

Ali Khakifirooz
Ali Khakifirooz Intel (United States)
Alexander Reznicek
Alexander Reznicek IBM (United States)
Bruce B. Doris
Bruce B. Doris IBM (United States)
Ruilong Xie
Ruilong Xie IBM (United States)
Ghavam G. Shahidi
Ghavam G. Shahidi IBM (United States)
Qing Cao
Qing Cao IBM (United States)
Jack A. Mandelman
Jack A. Mandelman Independent Scientist / Consultant, US
Carl J. Radens
Carl J. Radens IBM (United States)
Louis L. Hsu
Louis L. Hsu IBM (United States)
William R. Tonti
William R. Tonti Institute of Electrical and Electronics Engineers

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