What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Electrical engineering
- Transistor
His primary scientific interests are in Optoelectronics, Nanowire, Electrical engineering, Layer and Semiconductor.
The Optoelectronics study combines topics in areas such as Field-effect transistor, Semiconductor device and Gate oxide.
His Gate oxide research is multidisciplinary, relying on both Trench and Lithography.
He has researched Nanowire in several fields, including Inverter, Voltage, Wafer, Gate dielectric and Electronic engineering.
His work on Substrate as part of his general Layer study is frequently connected to Stack, thereby bridging the divide between different branches of science.
His Semiconductor research incorporates themes from Nanolithography and Silicon nitride.
His most cited work include:
- Fin field effect transistor devices with self-aligned source and drain regions (221 citations)
- High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling (199 citations)
- Nanowire mesh device and method of fabricating same (150 citations)
What are the main themes of his work throughout his whole career to date?
Optoelectronics, Layer, Electrical engineering, Nanotechnology and Nanowire are his primary areas of study.
His research in Optoelectronics intersects with topics in Field-effect transistor, Substrate, Gate oxide and Electronic engineering.
His studies in Layer integrate themes in fields like Transistor, Gate stack and Dielectric.
His work in the fields of Electrical engineering, such as MOSFET, Metal gate, Logic gate and Parasitic element, intersects with other areas such as Planar.
He combines subjects such as Critical dimension, CMOS and Lithography with his study of Nanotechnology.
His work focuses on many connections between Nanowire and other disciplines, such as Wafer, that overlap with his field of interest in Trench.
He most often published in these fields:
- Optoelectronics (65.90%)
- Layer (36.41%)
- Electrical engineering (20.74%)
What were the highlights of his more recent work (between 2015-2021)?
- Optoelectronics (65.90%)
- Layer (36.41%)
- Field-effect transistor (17.51%)
In recent papers he was focusing on the following fields of study:
His main research concerns Optoelectronics, Layer, Field-effect transistor, Nanosheet and Nanowire.
His primary area of study in Optoelectronics is in the field of Semiconductor.
His Layer research entails a greater understanding of Composite material.
His Field-effect transistor research incorporates elements of Directed self assembly and Second source.
Michael A. Guillorn works mostly in the field of Nanowire, limiting it down to topics relating to Die and, in certain cases, Manufacturing process and Josephson effect.
His Semiconductor device research integrates issues from Semiconductor materials, Electrical engineering, Dielectric, Fin and Gate oxide.
Between 2015 and 2021, his most popular works were:
- Nanosheet MOSFET with full-height air-gap spacer (86 citations)
- A Scalable Multi- TeraOPS Deep Learning Processor Core for AI Trainina and Inference (24 citations)
- High density programmable e-fuse co-integrated with vertical FETs (16 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Electrical engineering
- Transistor
His primary areas of study are Optoelectronics, Nanosheet, Layer, Stack and Field-effect transistor.
His study in Optoelectronics is interdisciplinary in nature, drawing from both Line edge roughness, Semiconductor device, Electronic engineering, Transistor and Substrate.
His Nanosheet study combines topics from a wide range of disciplines, such as CMOS and MOSFET.
The study of Layer is intertwined with the study of Threshold voltage in a number of ways.
In his research, Composite material is intimately related to Gate stack, which falls under the overarching field of Field-effect transistor.
He usually deals with Semiconductor and limits it to topics linked to Doping and Nanowire.
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