2026 Michael A. Guillorn: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	42	12546	12136	2877	2677	119	7126

Overview

Michael A. Guillorn is affiliated with IBM in the United States. Their research spans several fields related to engineering and computer science, with a focus on electrical and electronic engineering as well as hardware and architecture.

Their main fields of study include:

Engineering
Computer Science

Subfields of study emphasize:

Electrical and Electronic Engineering
Hardware and Architecture
Computer Vision and Pattern Recognition

Michael A. Guillorn's research covers a range of established topics:

Ferroelectric and Negative Capacitance Devices
Parallel Computing and Optimization Techniques
Advanced Memory and Neural Computing
Advanced Neural Network Applications
Low-power high-performance VLSI design
Advancements in Semiconductor Devices and Circuit Design
VLSI and Analog Circuit Testing

The scientist has published papers in notable venues, with frequent publications in:

IEEE Journal of Solid-State Circuits
Proceedings of the IEEE

Recent publications include:

"Efficient AI System Design With Cross-Layer Approximate Computing", 2020, Proceedings of the IEEE
"A 7-nm Four-Core Mixed-Precision AI Chip With 26.2-TFLOPS Hybrid-FP8 Training, 104.9-TOPS INT4 Inference, and Workload-Aware Throttling", 2021, IEEE Journal of Solid-State Circuits
"Power-Limited Inference Performance Optimization Using a Software-Assisted Peak Current Regulation Scheme in a 5-nm AI SoC", 2024, IEEE Journal of Solid-State Circuits

Michael A. Guillorn has collaborated frequently with several co-authors throughout their career. These include:

Swagath Venkataramani
Nianzheng Cao
Bruce Fleischer
Marcel Schaal
J. A. Silberman

Best Publications

Vertically Aligned Carbon Nanofibers and Related Structures: Controlled Synthesis and Directed Assembly

Anatoli Vasilievich Melechko;Vladimir I Merkulov;Timothy E McKnight;M. A. Guillorn

926
Citations
High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

S. Bangsaruntip;G. M. Cohen;A. Majumdar;Y. Zhang

526
Citations
Alignment mechanism of carbon nanofibers produced by plasma-enhanced chemical-vapor deposition

Vladimir I. Merkulov;Anatoli V. Melechko;Michael A. Guillorn;Douglas H. Lowndes

331
Citations
Shaping carbon nanostructures by controlling the synthesis process

Vladimir I. Merkulov;Michael A. Guillorn;Douglas H. Lowndes;Michael L. Simpson

257
Citations
Intracellular integration of synthetic nanostructures with viable cells for controlled biochemical manipulation

Timothy E McKnight;Anatoli V Melechko;Guy D Griffin;Michael A Guillorn

250
Citations
Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm

S. Bangsaruntip;A. Majumdar;G. M. Cohen;S. U. Engelmann

226
Citations
Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

Zhen Zhang;F Pagette;C D'Emic;B Yang

216
Citations
Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond

H. Kawasaki;V. S. Basker;T. Yamashita;C.-H. Lin

188
Citations
Controlled alignment of carbon nanofibers in a large-scale synthesis process

Vladimir I. Merkulov;A. V. Melechko;M. A. Guillorn;M. L. Simpson

180
Citations
Two-Dimensional Pattern Formation Using Graphoepitaxy of PS-b-PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication

Hsinyu Tsai;Jed W. Pitera;Hiroyuki Miyazoe;Sarunya Bangsaruntip

180
Citations
Individually addressable vertically aligned carbon nanofiber-based electrochemical probes

M. A. Guillorn;T. E. McKnight;A. Melechko;V. I. Merkulov

175
Citations
High- $\kappa$ /Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length

M.H. Khater;Zhen Zhang;Jin Cai;C. Lavoie

167
Citations
Performance trade-offs in FinFET and gate-all-around device architectures for 7nm-node and beyond

Seong-Dong Kim;Michael Guillorn;Isaac Lauer;Phil Oldiges

144
Citations
A Scalable Multi- TeraOPS Deep Learning Processor Core for AI Trainina and Inference

Bruce Fleischer;Sunil Shukla;Matthew Ziegler;Joel Silberman

137
Citations
Operation of a gated field emitter using an individual carbon nanofiber cathode

M. A. Guillorn;A. V. Melechko;V. I. Merkulov;E. D. Ellis

136
Citations
FinFET performance advantage at 22nm: An AC perspective

M. Guillorn;J. Chang;A. Bryant;N. Fuller

126
Citations
Large-scale synthesis of arrays of high-aspect-ratio rigid vertically aligned carbon nanofibres

A V Melechko;A V Melechko;T E McKnight;D K Hensley;M A Guillorn;M A Guillorn

124
Citations
Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond

S. Bangsaruntip;K. Balakrishnan;S.-L Cheng;J. Chang

114
Citations
Four-probe charge transport measurements on individual vertically aligned carbon nanofibers

Lan Zhang;Derek Austin;Vladimir I. Merkulov;Anatoli V. Meleshko

114
Citations
Field emission from isolated individual vertically aligned carbon nanocones

L. R. Baylor;V. I. Merkulov;E. D. Ellis;M. A. Guillorn

108
Citations