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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
61
Citations
15860
World Ranking
1518
National Ranking
619

Overview

Leland Chang is affiliated with IBM Research - Thomas J. Watson Research Center in the United States. Their research spans across multiple fields including Medicine and Engineering, with a focus on subfields such as Radiology, Nuclear Medicine and Imaging, Mechanics of Materials, Materials Chemistry, Electrical and Electronic Engineering, and Health Informatics.

The main topics addressed in their work include:

  • Radiomics and Machine Learning in Medical Imaging
  • Metal and Thin Film Mechanics
  • Fuel Cells and Related Materials
  • Artificial Intelligence in Healthcare and Education
  • Machine Learning in Healthcare
  • Diamond and Carbon-based Materials Research
  • Boron and Carbon Nanomaterials Research

Recent papers authored or coauthored by Chang cover a variety of areas and include:

  • Research on the Cultivation Strategies of Management Psychology Students' Abilities under the Background of "Four Integrations", 2024, Journal of Higher Education Research
  • Unleashing the Power of Language Models in Clinical Settings: A Trailblazing Evaluation Unveiling Novel Test Design, 2023, bioRxiv (Cold Spring Harbor Laboratory)
  • Effects of DC pulse mode on the performance of nitride coatings: a case study of NbN coatings, 2025, Applied Surface Science
  • Unveiling the Failure Mechanism of Pt Coating on Ti Porous Transport Layer in Simulated PEMEC Environment, 2025, ACS Applied Materials & Interfaces
  • Editorial for "Differentiating Benign Thyroid Nodules and Papillary Thyroid Carcinoma Using Time-Dependent Diffusion MRI: A Feasibility Study", 2025, Journal of Magnetic Resonance Imaging

Chang's frequent coauthors include Jing Li, Jih-Jen Wu, Xingyuan Lu, Xiaoping Li, and Li Lin. These collaborations have contributed to interdisciplinary research outputs spanning medical imaging, materials science, and engineering.

Their work is regularly published in venues such as:

  • bioRxiv (Cold Spring Harbor Laboratory)
  • Applied Surface Science
  • ACS Applied Materials & Interfaces
  • Journal of Higher Education Research
  • Journal of Magnetic Resonance Imaging

Best Publications

  • Stable SRAM cell design for the 32 nm node and beyond

    L. Chang;D.M. Fried;J. Hergenrother;J.W. Sleight

  • New Transport Phenomenon in a Semiconductor "Superlattice"

    L. Esaki;L. L. Chang

  • FinFET scaling to 10 nm gate length

    Bin Yu;Leland Chang;S. Ahmed;Haihong Wang

  • Sub 50-nm FinFET: PMOS

    Xuejue Huang;Wen-Chin Lee;Charles Kuo;D. Hisamoto

  • Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture

    Chenming Hu;Tsu-Jae King;Vivek Subramanian;Leland Chang

  • Sub-50 nm P-channel FinFET

    Xuejue Huang;Wen-Chin Lee;C. Kuo;D. Hisamoto

  • An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches

    L. Chang;R.K. Montoye;Y. Nakamura;K.A. Batson

  • A 45nm CMOS neuromorphic chip with a scalable architecture for learning in networks of spiking neurons

    Jae-sun Seo;Bernard Brezzo;Yong Liu;Benjamin D. Parker

  • Extremely scaled silicon nano-CMOS devices

    L. Chang;Yang-kyu Choi;D. Ha;P. Ranade

  • Ultralow-voltage, minimum-energy CMOS

    S. Hanson;B. Zhai;K. Bernstein;D. Blaauw

  • Content addressable memory array programmed to perform logic operations

    Leland Chang;Gary S. Ditlow;Brian L. Ji;Robert K. Montoye

  • In1−xGaxAs‐GaSb1−yAsy heterojunctions by molecular beam epitaxy

    H. Sakaki;L. L. Chang;R. Ludeke;Chin‐An Chang

  • Integrated Circuit Having Gates and Active Regions Forming a Regular Grating

    Leland Chang;Hon-Sum Philip Wong

  • Practical Strategies for Power-Efficient Computing Technologies

    L. Chang;D.J. Frank;R.K. Montoye;S.J. Koester

  • CMOS circuit performance enhancement by surface orientation optimization

    Leland Chang;Meikei Ieong;Min Yang

  • Gate length scaling and threshold voltage control of double-gate MOSFETs

    L. Chang;S. Tang;Tsu-Jae King;J. Bokor

  • Sub-60-nm quasi-planar FinFETs fabricated using a simplified process

    N. Lindert;L. Chang;Yang-Kyu Choi;E.H. Anderson

  • Optical absorption of In1−xGaxAsGaSb1−yAsy superlattices

    G.A. Sai-Halasz;L.L. Chang;J.-M. Welter;C.-A. Chang

  • 1 Mb 0.41 µm² 2T-2R Cell Nonvolatile TCAM With Two-Bit Encoding and Clocked Self-Referenced Sensing

    Jing Li;Robert K. Montoye;Masatoshi Ishii;Leland Chang

  • A fully-integrated switched-capacitor 2∶1 voltage converter with regulation capability and 90% efficiency at 2.3A/mm 2

    Leland Chang;Robert K. Montoye;Brian L. Ji;Alan J. Weger

Frequent Co-Authors

Jeffrey W. Sleight
Jeffrey W. Sleight IBM (United States)
Josephine B. Chang
Josephine B. Chang Northrop Grumman (United States)
Tsu-Jae King
Tsu-Jae King University of California, Berkeley
Chenming Hu
Chenming Hu University of California, Berkeley
Jeffrey Bokor
Jeffrey Bokor University of California, Berkeley
Yang-Kyu Choi
Yang-Kyu Choi Korea Advanced Institute of Science and Technology
Wilfried Haensch
Wilfried Haensch Argonne National Laboratory
Swagath Venkataramani
Swagath Venkataramani IBM (United States)
Michael A. Guillorn
Michael A. Guillorn IBM (United States)
Robert H. Dennard
Robert H. Dennard IBM (United States)

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