Optoelectronics, MOSFET, Nanotechnology, Electrical engineering and CMOS are his primary areas of study. His Optoelectronics research is multidisciplinary, incorporating elements of Transistor, Gate dielectric and Gate oxide. His study in the fields of Short-channel effect under the domain of MOSFET overlaps with other disciplines such as Planar.
His Nanotechnology research is multidisciplinary, incorporating perspectives in Field-effect transistor, Capacitance and Nanoimprint lithography. In his study, which falls under the umbrella issue of Capacitance, Scattering and Electron is strongly linked to Surface modification. Many of his research projects under Electrical engineering are closely connected to Fin with Fin, tying the diverse disciplines of science together.
His primary areas of investigation include Optoelectronics, Optics, Condensed matter physics, Atomic physics and Extreme ultraviolet lithography. Jeffrey Bokor has researched Optoelectronics in several fields, including Transistor, Gate oxide, MOSFET and Nanotechnology. His work deals with themes such as Threshold voltage, Silicon on insulator and Electronic engineering, CMOS, which intersect with MOSFET.
His studies examine the connections between Condensed matter physics and genetics, as well as such issues in Magnetization, with regards to Ultrashort pulse and Spintronics. His research on Atomic physics also deals with topics like
His primary scientific interests are in Condensed matter physics, Optoelectronics, Magnetization, Ultrashort pulse and Ferromagnetism. His Condensed matter physics study integrates concerns from other disciplines, such as Thin film, Electric field, Ferrimagnetism, Multiferroics and Domain wall. His Optoelectronics research incorporates themes from Graphene nanoribbons and Femtosecond.
The study incorporates disciplines such as Amorphous solid, Spintronics, Heterojunction and Coercivity in addition to Magnetization. Jeffrey Bokor has included themes like Switching time, Magnetization dynamics, Demagnetizing field, Electron and Picosecond in his Ultrashort pulse study. His work in Semiconductor addresses issues such as Monolayer, which are connected to fields such as Ohmic contact, Transistor, Gate oxide, Effective mass and Silicon.
Jeffrey Bokor mainly investigates Condensed matter physics, Magnetization, Optoelectronics, Ultrashort pulse and Electron. His Condensed matter physics research integrates issues from Magnetic anisotropy and Magnetic field. He works mostly in the field of Magnetization, limiting it down to topics relating to Heterojunction and, in certain cases, Electric field and Multiferroics.
His biological study spans a wide range of topics, including Transistor, Gate dielectric and Gate oxide. His work is dedicated to discovering how Transistor, Solution process are connected with Field-effect transistor and other disciplines. His studies deal with areas such as Nanotechnology and Carbon nanotube as well as Field-effect transistor.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
D. Hisamoto;Wen-Chin Lee;J. Kedzierski;H. Takeuchi.
IEEE Transactions on Electron Devices (2000)
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
D. Hisamoto;Wen-Chin Lee;J. Kedzierski;H. Takeuchi.
IEEE Transactions on Electron Devices (2000)
MoS2 transistors with 1-nanometer gate lengths
Sujay B. Desai;Sujay B. Desai;Surabhi R. Madhvapathy;Surabhi R. Madhvapathy;Angada B. Sachid;Angada B. Sachid;Juan Pablo Llinas;Juan Pablo Llinas.
Science (2016)
MoS2 transistors with 1-nanometer gate lengths
Sujay B. Desai;Sujay B. Desai;Surabhi R. Madhvapathy;Surabhi R. Madhvapathy;Angada B. Sachid;Angada B. Sachid;Juan Pablo Llinas;Juan Pablo Llinas.
Science (2016)
Sub 50-nm FinFET: PMOS
Xuejue Huang;Wen-Chin Lee;Charles Kuo;D. Hisamoto.
international electron devices meeting (1999)
Sub 50-nm FinFET: PMOS
Xuejue Huang;Wen-Chin Lee;Charles Kuo;D. Hisamoto.
international electron devices meeting (1999)
FinFET scaling to 10 nm gate length
Bin Yu;Leland Chang;S. Ahmed;Haihong Wang.
international electron devices meeting (2002)
FinFET scaling to 10 nm gate length
Bin Yu;Leland Chang;S. Ahmed;Haihong Wang.
international electron devices meeting (2002)
Electron thermalization in gold.
W. S. Fann;R. Storz;H. W. K. Tom;J. Bokor.
Physical Review B (1992)
Electron thermalization in gold.
W. S. Fann;R. Storz;H. W. K. Tom;J. Bokor.
Physical Review B (1992)
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