D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 83 Citations 25,880 346 World Ranking 883 National Ranking 337
Electronics and Electrical Engineering D-index 84 Citations 26,448 413 World Ranking 207 National Ranking 116

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Optics

Optoelectronics, MOSFET, Nanotechnology, Electrical engineering and CMOS are his primary areas of study. His Optoelectronics research is multidisciplinary, incorporating elements of Transistor, Gate dielectric and Gate oxide. His study in the fields of Short-channel effect under the domain of MOSFET overlaps with other disciplines such as Planar.

His Nanotechnology research is multidisciplinary, incorporating perspectives in Field-effect transistor, Capacitance and Nanoimprint lithography. In his study, which falls under the umbrella issue of Capacitance, Scattering and Electron is strongly linked to Surface modification. Many of his research projects under Electrical engineering are closely connected to Fin with Fin, tying the diverse disciplines of science together.

His most cited work include:

  • FinFET-a self-aligned double-gate MOSFET scalable to 20 nm (1336 citations)
  • MoS2 transistors with 1-nanometer gate lengths (586 citations)
  • MoS2 transistors with 1-nanometer gate lengths (586 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Optics, Condensed matter physics, Atomic physics and Extreme ultraviolet lithography. Jeffrey Bokor has researched Optoelectronics in several fields, including Transistor, Gate oxide, MOSFET and Nanotechnology. His work deals with themes such as Threshold voltage, Silicon on insulator and Electronic engineering, CMOS, which intersect with MOSFET.

His studies examine the connections between Condensed matter physics and genetics, as well as such issues in Magnetization, with regards to Ultrashort pulse and Spintronics. His research on Atomic physics also deals with topics like

  • Electron which intersects with area such as Scattering,
  • Ion together with Dopant. His Extreme ultraviolet lithography research includes themes of Diffraction and Photolithography.

He most often published in these fields:

  • Optoelectronics (52.75%)
  • Optics (30.55%)
  • Condensed matter physics (20.96%)

What were the highlights of his more recent work (between 2014-2021)?

  • Condensed matter physics (20.96%)
  • Optoelectronics (52.75%)
  • Magnetization (12.08%)

In recent papers he was focusing on the following fields of study:

His primary scientific interests are in Condensed matter physics, Optoelectronics, Magnetization, Ultrashort pulse and Ferromagnetism. His Condensed matter physics study integrates concerns from other disciplines, such as Thin film, Electric field, Ferrimagnetism, Multiferroics and Domain wall. His Optoelectronics research incorporates themes from Graphene nanoribbons and Femtosecond.

The study incorporates disciplines such as Amorphous solid, Spintronics, Heterojunction and Coercivity in addition to Magnetization. Jeffrey Bokor has included themes like Switching time, Magnetization dynamics, Demagnetizing field, Electron and Picosecond in his Ultrashort pulse study. His work in Semiconductor addresses issues such as Monolayer, which are connected to fields such as Ohmic contact, Transistor, Gate oxide, Effective mass and Silicon.

Between 2014 and 2021, his most popular works were:

  • MoS2 transistors with 1-nanometer gate lengths (586 citations)
  • MoS2 transistors with 1-nanometer gate lengths (586 citations)
  • Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy (146 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Optics

Jeffrey Bokor mainly investigates Condensed matter physics, Magnetization, Optoelectronics, Ultrashort pulse and Electron. His Condensed matter physics research integrates issues from Magnetic anisotropy and Magnetic field. He works mostly in the field of Magnetization, limiting it down to topics relating to Heterojunction and, in certain cases, Electric field and Multiferroics.

His biological study spans a wide range of topics, including Transistor, Gate dielectric and Gate oxide. His work is dedicated to discovering how Transistor, Solution process are connected with Field-effect transistor and other disciplines. His studies deal with areas such as Nanotechnology and Carbon nanotube as well as Field-effect transistor.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

D. Hisamoto;Wen-Chin Lee;J. Kedzierski;H. Takeuchi.
IEEE Transactions on Electron Devices (2000)

2195 Citations

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

D. Hisamoto;Wen-Chin Lee;J. Kedzierski;H. Takeuchi.
IEEE Transactions on Electron Devices (2000)

2195 Citations

MoS2 transistors with 1-nanometer gate lengths

Sujay B. Desai;Sujay B. Desai;Surabhi R. Madhvapathy;Surabhi R. Madhvapathy;Angada B. Sachid;Angada B. Sachid;Juan Pablo Llinas;Juan Pablo Llinas.
Science (2016)

1046 Citations

MoS2 transistors with 1-nanometer gate lengths

Sujay B. Desai;Sujay B. Desai;Surabhi R. Madhvapathy;Surabhi R. Madhvapathy;Angada B. Sachid;Angada B. Sachid;Juan Pablo Llinas;Juan Pablo Llinas.
Science (2016)

1046 Citations

Sub 50-nm FinFET: PMOS

Xuejue Huang;Wen-Chin Lee;Charles Kuo;D. Hisamoto.
international electron devices meeting (1999)

813 Citations

Sub 50-nm FinFET: PMOS

Xuejue Huang;Wen-Chin Lee;Charles Kuo;D. Hisamoto.
international electron devices meeting (1999)

813 Citations

FinFET scaling to 10 nm gate length

Bin Yu;Leland Chang;S. Ahmed;Haihong Wang.
international electron devices meeting (2002)

779 Citations

FinFET scaling to 10 nm gate length

Bin Yu;Leland Chang;S. Ahmed;Haihong Wang.
international electron devices meeting (2002)

779 Citations

Electron thermalization in gold.

W. S. Fann;R. Storz;H. W. K. Tom;J. Bokor.
Physical Review B (1992)

770 Citations

Electron thermalization in gold.

W. S. Fann;R. Storz;H. W. K. Tom;J. Bokor.
Physical Review B (1992)

770 Citations

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