World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
89
Citations
33030
World Ranking
308
National Ranking
147

Materials Science

D-Index
88
Citations
32061
World Ranking
1842
National Ranking
560

Overview

Jeffrey Bokor is affiliated with the University of California, Berkeley in the United States. Their research spans multiple fields including Materials Science, Engineering, and Physics and Astronomy, with a strong emphasis on Electrical and Electronic Engineering, Materials Chemistry, and Atomic and Molecular Physics, and Optics.

The scope of their work covers diverse subfields such as Electronic, Optical and Magnetic Materials, and Biomedical Engineering. Major research topics include the magnetic properties of thin films, graphene research and applications, magneto-optical properties and applications, multiferroics and related materials, magnetic and transport properties of perovskites and related materials, ferroelectric and piezoelectric materials, and molecular junctions and nanostructures.

Recent papers by Jeffrey Bokor illustrate various aspects of their research interests:

  • Ultralow contact resistance between semimetal and monolayer semiconductors, 2021, Nature
  • Local negative permittivity and topological phase transition in polar skyrmions, 2020, Nature Materials
  • Spin-orbit torque switching of a ferromagnet with picosecond electrical pulses, 2020, Nature Electronics
  • Progress towards ultrafast spintronics applications, 2020, Journal of Magnetism and Magnetic Materials
  • Manipulating magnetoelectric energy landscape in multiferroics, 2020, Nature Communications

Frequent coauthors contributing to their research include Debanjan Polley, Yuxuan Lin, Zafer Mutlu, Akshay Pattabi, and Juan Pablo Llinas.

Publication venues where their work has appeared most often include:

  • arXiv (Cornell University)
  • Journal of Magnetism and Magnetic Materials
  • Nature Communications
  • Physical Review B
  • Advanced Functional Materials

Best Publications

  • FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

    D. Hisamoto;Wen-Chin Lee;J. Kedzierski;H. Takeuchi

  • MoS2 transistors with 1-nanometer gate lengths

    Sujay B. Desai;Sujay B. Desai;Surabhi R. Madhvapathy;Surabhi R. Madhvapathy;Angada B. Sachid;Angada B. Sachid;Juan Pablo Llinas;Juan Pablo Llinas

  • Ultralow contact resistance between semimetal and monolayer semiconductors.

    Pin-Chun Shen;Cong Su;Yuxuan Lin;Yuxuan Lin;Ang-Sheng Chou;Ang-Sheng Chou

  • FinFET scaling to 10 nm gate length

    Bin Yu;Leland Chang;S. Ahmed;Haihong Wang

  • Sub 50-nm FinFET: PMOS

    Xuejue Huang;Wen-Chin Lee;Charles Kuo;D. Hisamoto

  • Electron thermalization in gold.

    W. S. Fann;R. Storz;H. W. K. Tom;J. Bokor

  • Direct measurement of nonequilibrium electron-energy distributions in subpicosecond laser-heated gold films

    W. S. Fann;R. Storz;H. W. K. Tom;J. Bokor

  • Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture

    Chenming Hu;Tsu-Jae King;Vivek Subramanian;Leland Chang

  • Direct chemical vapor deposition of graphene on dielectric surfaces

    Yuegang Zhang;Ariel Ismach

  • Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI

    F. Assaderaghi;D. Sinitsky;S.A. Parke;J. Bokor

  • Gold nanoparticle self-similar chain structure organized by DNA origami.

    Baoquan Ding;Zhengtao Deng;Hao Yan;Stefano Cabrini

  • Sub-50 nm P-channel FinFET

    Xuejue Huang;Wen-Chin Lee;C. Kuo;D. Hisamoto

  • Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

    Juan Pablo Llinas;Juan Pablo Llinas;Andrew Fairbrother;Gabriela Borin Barin;Wu Shi;Wu Shi

  • Diameter-dependent electron mobility of InAs nanowires.

    Alexandra C. Ford;Johnny C. Ho;Johnny C. Ho;Johnny C. Ho;Yu-Lun Chueh;Yu-Lun Chueh;Yu-Lun Chueh;Yu-Chih Tseng;Yu-Chih Tseng;Yu-Chih Tseng

  • Sub-20 nm CMOS FinFET technologies

    Yang-Kyu Choi;N. Lindert;Peiqi Xuan;S. Tang

  • Formation of bandgap and subbands in graphene nanomeshes with sub-10 nm ribbon width fabricated via nanoimprint lithography.

    Xiaogan Liang;Yeon Sik Jung;Shiwei Wu;Ariel Ismach

  • A folded-channel MOSFET for deep-sub-tenth micron era

    D. Hisamoto;Wen-Chin Lee;J. Kedzierski;E. Anderson

  • Extremely scaled silicon nano-CMOS devices

    L. Chang;Yang-kyu Choi;D. Ha;P. Ranade

  • Nanofocusing in a metal-insulator-metal gap plasmon waveguide with a three-dimensional linear taper

    Hyuck Choo;Myung Ki Kim;Myung Ki Kim;Matteo Staffaroni;Tae Joon Seok

  • Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

    Yang-Kyu Choi;K. Asano;N. Lindert;V. Subramanian

  • Direct measurement of nonequilibrium electron-energy distributions in sub-picosecond laser-heated gold films

    W.S. Fann;R. Storz;H.W.K. Tom;J. Bokor

Frequent Co-Authors

Chenming Hu
Chenming Hu University of California, Berkeley
Tsu-Jae King
Tsu-Jae King University of California, Berkeley
Yang-Kyu Choi
Yang-Kyu Choi Korea Advanced Institute of Science and Technology
Sayeef Salahuddin
Sayeef Salahuddin University of California, Berkeley
Erik H. Anderson
Erik H. Anderson Lawrence Berkeley National Laboratory
Philip H. Bucksbaum
Philip H. Bucksbaum SLAC National Accelerator Laboratory
Stefano Cabrini
Stefano Cabrini Lawrence Berkeley National Laboratory
Leland Chang
Leland Chang IBM Research - Thomas J. Watson Research Center
Rob N. Candler
Rob N. Candler University of California, Los Angeles
Vivek Subramanian
Vivek Subramanian École Polytechnique Fédérale de Lausanne

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