2026 Bin Yu: Engineering and Technology Researcher – H-Index, Publications & Awards

D-Index & Metrics

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Engineering and Technology	59	2370	2268	483	482	223	11616

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Engineering and Technology

2370

2268

483

482

223

11616

Engineering and Technology

D-Index

Citations

11616

World Ranking

2370

National Ranking

483

Research.com Recognitions

2017 - Fellow, National Academy of Inventors

Overview

Bin Yu is affiliated with Southeast University in China and has a research portfolio primarily situated in the fields of engineering and materials science. Their work spans subfields such as electrical and electronic engineering, materials chemistry, artificial intelligence, biomedical engineering, and cellular and molecular neuroscience.

The scientist's main research topics include:

Advanced Memory and Neural Computing
2D Materials and Applications
Ferroelectric and Negative Capacitance Devices
Graphene Research and Applications
Neuroscience and Neural Engineering
CCD and CMOS Imaging Sensors
Nanowire Synthesis and Applications

Bin Yu has published extensively in several notable venues, with recurring contributions in:

Advanced Materials
Nature Communications
IEEE Electron Device Letters
Advanced Functional Materials
InfoMat

The scientist has collaborated frequently with several coauthors over their career. The most frequent collaborators include:

Yang Xu
Yuda Zhao
Jiachao Zhou
Jiayang Hu
Srikrishna Chanakya Bodepudi

Among Bin Yu's recent papers are:

"2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges" (2022), published in Chemical Reviews
"Graphene charge-injection photodetectors" (2022), published in Nature Electronics
"Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions" (2021), published in Nature Communications
"Microfabrication of peptide self-assemblies: inspired by nature towards applications" (2022), published in Chemical Society Reviews
"Macroscopic assembled graphene nanofilms based room temperature ultrafast mid-infrared photodetectors" (2022), published in InfoMat

Bin Yu was recognized as a Fellow of the National Academy of Inventors in 2017.

Best Publications

MOSFET having a double gate

Bin Yu;Eric N. Paton

947
Citations
FinFET scaling to 10 nm gate length

Bin Yu;Leland Chang;S. Ahmed;Haihong Wang

839
Citations
Method for forming multiple structures in a semiconductor device

Bin Yu;Judy Xilin An;Cyrus E. Tabery;HaiHong Wang

570
Citations
Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications

Eric N. Paton;Qi Xiang;Bin Yu

284
Citations
Climate sensitivity and response

G. J. Boer;B. Yu

262
Citations
Life cycle assessment of pavement: Methodology and case study

Bin Yu;Qing Lu

214
Citations
Method for forming fins in a FinFET device using sacrificial carbon layer

Matthew S. Buynoski;Srikanteswara Dakshina-Murthy;Cyrus E. Tabery;HaiHong Wang

212
Citations
An analysis on the physical process of the influence of AO on ENSO

Shangfeng Chen;Bin Yu;Wen Chen

200
Citations
Efficient semantic-based content search in P2P network

H.T. Shen;Y. Shu;B. Yu

178
Citations
Method of manufacturing a semiconductor device having a fin structure

Bin Yu;Shibly S. Ahmed;Judy Xilin An;Srikanteswara Dakshina-Murthy

160
Citations
The impact of combined ENSO and PDO on the PNA climate: a 1,000-year climate modeling study

B. Yu;F. W. Zwiers

155
Citations
FinFET device with multiple fin structures

Matthew S. Buynoski;Judy Xilin An;HaiHong Wang;Bin Yu

143
Citations
Shallow trench isolation (STI) region with high-K liner and method of formation

Olov B. Karlsson;HaiHong Wang;Bin Yu;Zoran Krivokapic

134
Citations
Double spacer FinFET formation

Matthew S. Buynoski;Judy Xilin An;HaiHong Wang;Bin Yu

133
Citations
Strained channel FinFET

Srikanteswara Dakshina-Murthy;Judy Xilin An;Zoran Krivokapic;HaiHong Wang

131
Citations
Semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layer and method of fabrication using wafer bonding

Bin Yu;William G. En;Judy Xilin An;Concetta E. Riccobene

131
Citations
Multi-objective optimization for asphalt pavement maintenance plans at project level: Integrating performance, cost and environment

Bin Yu;Xingyu Gu;Fujian Ni;Rui Guo

129
Citations
15 nm gate length planar CMOS transistor

Bin Yu;Haihong Wang;A. Joshi;Qi Xiang

128
Citations
Molecular dynamics simulation of distribution and adhesion of asphalt components on steel slag

Jinzhou Liu;Bin Yu;Qianzhe Hong

126
Citations
Structure and dynamics of a springtime atmospheric wave train over the North Atlantic and Eurasia

Shangfeng Chen;Renguang Wu;Renguang Wu;Wen Chen;Kaiming Hu

124
Citations
Method for forming super-steep retrograded channel (SSRC) for cmos transistor using rapid laser annealing to reduce thermal budget

Bin Yu

122
Citations
Double gate semiconductor device having separate gates

Shibly S. Ahmed;Haihong Wang;Bin Yu

119
Citations
Gate engineering for deep-submicron CMOS transistors

Bin Yu;Dong-Hyuk Ju;Wen-Chin Lee;N. Kepler

118
Citations