World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
59
Citations
11616
World Ranking
2372
National Ranking
482

Bin Yu publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Bin Yu sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 223 publications — 56th percentile

56% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Bin Yu D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Bin Yu sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 59 D-Index — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Research.com Recognitions

  • 2017 - Fellow, National Academy of Inventors

Overview

Bin Yu is affiliated with Southeast University in China and has a research portfolio primarily situated in the fields of engineering and materials science. Their work spans subfields such as electrical and electronic engineering, materials chemistry, artificial intelligence, biomedical engineering, and cellular and molecular neuroscience.

The scientist's main research topics include:

  • Advanced Memory and Neural Computing
  • 2D Materials and Applications
  • Ferroelectric and Negative Capacitance Devices
  • Graphene Research and Applications
  • Neuroscience and Neural Engineering
  • CCD and CMOS Imaging Sensors
  • Nanowire Synthesis and Applications

Bin Yu has published extensively in several notable venues, with recurring contributions in:

  • Advanced Materials
  • Nature Communications
  • IEEE Electron Device Letters
  • Advanced Functional Materials
  • InfoMat

The scientist has collaborated frequently with several coauthors over their career. The most frequent collaborators include:

  • Yang Xu
  • Yuda Zhao
  • Jiachao Zhou
  • Jiayang Hu
  • Srikrishna Chanakya Bodepudi

Among Bin Yu's recent papers are:

  • "2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges" (2022), published in Chemical Reviews
  • "Graphene charge-injection photodetectors" (2022), published in Nature Electronics
  • "Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions" (2021), published in Nature Communications
  • "Microfabrication of peptide self-assemblies: inspired by nature towards applications" (2022), published in Chemical Society Reviews
  • "Macroscopic assembled graphene nanofilms based room temperature ultrafast mid-infrared photodetectors" (2022), published in InfoMat

Bin Yu was recognized as a Fellow of the National Academy of Inventors in 2017.

Best Publications

  • MOSFET having a double gate

    Bin Yu;Eric N. Paton

  • FinFET scaling to 10 nm gate length

    Bin Yu;Leland Chang;S. Ahmed;Haihong Wang

  • Method for forming multiple structures in a semiconductor device

    Bin Yu;Judy Xilin An;Cyrus E. Tabery;HaiHong Wang

  • Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications

    Eric N. Paton;Qi Xiang;Bin Yu

  • Climate sensitivity and response

    G. J. Boer;B. Yu

  • Life cycle assessment of pavement: Methodology and case study

    Bin Yu;Qing Lu

  • Method for forming fins in a FinFET device using sacrificial carbon layer

    Matthew S. Buynoski;Srikanteswara Dakshina-Murthy;Cyrus E. Tabery;HaiHong Wang

  • An analysis on the physical process of the influence of AO on ENSO

    Shangfeng Chen;Bin Yu;Wen Chen

  • Efficient semantic-based content search in P2P network

    H.T. Shen;Y. Shu;B. Yu

  • Method of manufacturing a semiconductor device having a fin structure

    Bin Yu;Shibly S. Ahmed;Judy Xilin An;Srikanteswara Dakshina-Murthy

  • The impact of combined ENSO and PDO on the PNA climate: a 1,000-year climate modeling study

    B. Yu;F. W. Zwiers

  • FinFET device with multiple fin structures

    Matthew S. Buynoski;Judy Xilin An;HaiHong Wang;Bin Yu

  • Shallow trench isolation (STI) region with high-K liner and method of formation

    Olov B. Karlsson;HaiHong Wang;Bin Yu;Zoran Krivokapic

  • Double spacer FinFET formation

    Matthew S. Buynoski;Judy Xilin An;HaiHong Wang;Bin Yu

  • Strained channel FinFET

    Srikanteswara Dakshina-Murthy;Judy Xilin An;Zoran Krivokapic;HaiHong Wang

  • Semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layer and method of fabrication using wafer bonding

    Bin Yu;William G. En;Judy Xilin An;Concetta E. Riccobene

  • Multi-objective optimization for asphalt pavement maintenance plans at project level: Integrating performance, cost and environment

    Bin Yu;Xingyu Gu;Fujian Ni;Rui Guo

  • 15 nm gate length planar CMOS transistor

    Bin Yu;Haihong Wang;A. Joshi;Qi Xiang

  • Molecular dynamics simulation of distribution and adhesion of asphalt components on steel slag

    Jinzhou Liu;Bin Yu;Qianzhe Hong

  • Structure and dynamics of a springtime atmospheric wave train over the North Atlantic and Eurasia

    Shangfeng Chen;Renguang Wu;Renguang Wu;Wen Chen;Kaiming Hu

  • Method for forming super-steep retrograded channel (SSRC) for cmos transistor using rapid laser annealing to reduce thermal budget

    Bin Yu

  • Double gate semiconductor device having separate gates

    Shibly S. Ahmed;Haihong Wang;Bin Yu

  • Gate engineering for deep-submicron CMOS transistors

    Bin Yu;Dong-Hyuk Ju;Wen-Chin Lee;N. Kepler

Frequent Co-Authors

Shao-Quan Liu
Shao-Quan Liu National University of Singapore
Qi Xiang
Qi Xiang Xilinx (United States)
Zoran Krivokapic
Zoran Krivokapic GlobalFoundries (United States)
Renguang Wu
Renguang Wu Zhejiang University
George J. Boer
George J. Boer Environment and Climate Change Canada
Francis W. Zwiers
Francis W. Zwiers University of Victoria
Chenming Hu
Chenming Hu University of California, Berkeley
Leland Chang
Leland Chang IBM Research - Thomas J. Watson Research Center
Tsu-Jae King
Tsu-Jae King University of California, Berkeley
Anne-Claude Gingras
Anne-Claude Gingras Lunenfeld-Tanenbaum Research Institute

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