Qi Xiang

What is he best known for?

The fields of study he is best known for:

• Semiconductor
• Silicon
• Integrated circuit

His main research concerns Optoelectronics, Gate oxide, Electronic engineering, Layer and Gate dielectric. Qi Xiang combines subjects such as Transistor, MOSFET, Semiconductor device and Electrical engineering with his study of Optoelectronics. His research on Gate oxide focuses in particular on Metal gate.

He interconnects PMOS logic and Silicon in the investigation of issues within Electronic engineering. His research in Layer intersects with topics in High-κ dielectric and Oxide. Qi Xiang works mostly in the field of Gate dielectric, limiting it down to topics relating to Dielectric and, in certain cases, Wafer, Plating and NMOS logic.

His most cited work include:

• FinFET scaling to 10 nm gate length (507 citations)
• Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications (177 citations)
• Method for forming a thin, high quality buffer layer in a field effect transistor and related structure (156 citations)

What are the main themes of his work throughout his whole career to date?

Optoelectronics, Electronic engineering, Gate oxide, MOSFET and Layer are his primary areas of study. His Optoelectronics research is multidisciplinary, incorporating elements of Semiconductor device, Substrate, Gate dielectric, Strained silicon and Electrical engineering. His Electronic engineering study combines topics from a wide range of disciplines, such as Silicon on insulator, Silicide, Silicon, Dopant and Transistor.

Qi Xiang has researched Gate oxide in several fields, including Annealing and Copper interconnect. His MOSFET study integrates concerns from other disciplines, such as Threshold voltage, Ion implantation, Electron mobility and Leakage. His Layer research is multidisciplinary, incorporating perspectives in Semiconductor materials, Oxide and Metal.

He most often published in these fields:

• Optoelectronics (92.37%)
• Electronic engineering (48.85%)
• Gate oxide (37.40%)

What were the highlights of his more recent work (between 2002-2009)?

• Optoelectronics (92.37%)
• Electronic engineering (48.85%)
• MOSFET (32.82%)

In recent papers he was focusing on the following fields of study:

His scientific interests lie mostly in Optoelectronics, Electronic engineering, MOSFET, Strained silicon and Gate oxide. His Optoelectronics research integrates issues from Layer, Substrate and Transistor. His studies in Electronic engineering integrate themes in fields like Monocrystalline silicon, Dopant and Oxide thin-film transistor.

MOSFET is a subfield of Electrical engineering that Qi Xiang explores. His study in Strained silicon is interdisciplinary in nature, drawing from both Silicon, Germanium, Trench, Silicon carbide and Semiconductor. His studies deal with areas such as Ion implantation, Gate dielectric and Atomic layer deposition as well as Gate oxide.

Between 2002 and 2009, his most popular works were:

• Method for forming a thin, high quality buffer layer in a field effect transistor and related structure (156 citations)
• Shallow trench isolation (STI) region with high-K liner and method of formation (105 citations)
• Mosfets incorporating nickel germanosilicided gate and methods of their formation (100 citations)

In his most recent research, the most cited papers focused on:

• Semiconductor
• Integrated circuit
• Silicon

Qi Xiang mainly focuses on Optoelectronics, Gate oxide, MOSFET, Strained silicon and Silicon-germanium. His work carried out in the field of Optoelectronics brings together such families of science as Electronic engineering, Substrate and Electrical engineering. His research in Substrate intersects with topics in Field-effect transistor and Transistor.

His research integrates issues of Trench, Gate dielectric and Semiconductor in his study of Gate oxide. He has included themes like Silicide and Nickel in his MOSFET study. His Silicon-germanium study also includes fields such as

• Epitaxy together with LOCOS and Oxide,
• Electron mobility, which have a strong connection to Leakage, Inverter, Ring oscillator and CMOS.