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Materials Science

D-Index
45
Citations
6537
World Ranking
11842
National Ranking
2750

Overview

Sergey D. Lopatin is a researcher affiliated with Applied Materials in the United States. Their work focuses primarily on the field of Engineering, with a specialization in the Mechanics of Materials subfield.

The core topics of their research include:

  • Composite Structure Analysis and Optimization
  • Numerical methods in engineering
  • Elasticity and Wave Propagation

They have contributed publications to the venue Construction Materials and Products, which is also the outlet for their known recent paper:

  • COMPLETE SOLUTION OF LAME PROBLEM FOR A THICK-WALLED COMPOSITE NONLINEARLY DEFORMABLE CYLINDER, 2020, Construction Materials and Products

This work involves an analytical approach to mechanics problems in composite materials, addressing nonlinear deformation behaviors. The paper has been cited multiple times, indicating its relevance within the research community.

Among frequent collaborators, Sergey D. Lopatin has worked with A. L. Kravchuk on two occasions, suggesting an ongoing research partnership.

Best Publications

  • Interconnect structure formed in porous dielectric material with minimized degradation and electromigration

    Sergey Lopatin;Fei Wang;Diana Schonauer;Steven C. Avanzino

  • Method of forming copper/copper alloy interconnection with reduced electromigration

    Takeshi Nogami;Sergey Lopatin;Young-Chang Joo

  • Semiconductor metalization barrier

    Sergey D. Lopatin;Shekhar Pramanick;Dirk Brown

  • Apparatus for electroless deposition

    Dmitry Lubomirsky;Arulkumar Shanmugasundram;Ian A. Pancham;Sergey Lopatin

  • Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failure

    Robin Cheung;Sergey Lopatin

  • Manufacturing method for semiconductor metalization barrier

    Sergey D. Lopatin;Shekhar Pramanick;Dirk Brown

  • Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed

    Sergey Lopatin;Krishnashree Achuthan

  • Method of copper interconnect formation using atomic layer copper deposition and a device thereby formed

    Sergey D. Lopatin;Carl Galewski;Takeshi T. N. Nogami

  • Correlation of stress and texture evolution during self- and thermal annealing of electroplated Cu films

    Haebum Lee;S. Simon Wong;Sergey D. Lopatin

  • Integrated electroless metallization for ULSI

    Yosi Shacham-Diamand;Sergey Lopatin

  • Composite materials containing metallized carbon nanotubes and nanofibers

    Sergey D. Lopatin;Robert Z. Bachrach;Liang-Yuh Chen

  • Thin electroless barrier for copper films

    Sergey D. Lopatin;Yosi Y. Shacham-Diamand;Valery M. Dubin;Yoon So Kim

  • Method of encapsulated copper (Cu) interconnect formation

    Sergey D. Lopatin;Robin W. Cheung

  • Method of forming copper sulfide for memory cell

    Minh Van Ngo;Sergey D. Lopatin;Suzette K. Pangrle;Nicholas H. Tripsas

  • Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers

    Sergey Lopatin;Arulkumar Shanmugasundram;Yosef Shacham-Diamand;Timothy Weidman

  • Methdo and equipment for electroplating on roll-to-roll flexible solar cell substrates

    Sergey Lopatin;David Eaglesham

  • Scalable process for application of stabilized lithium metal powder in Li-ion batteries

    Guo Ai;Zhihui Wang;Hui Zhao;Wenfeng Mao

  • Method of metallizing a solar cell substrate

    Sergey Lopatin;Nicolay Y. Kovarsky;David Eaglesham;John O. Dukovic

  • Porous three dimensional copper, tin, copper-tin, copper-tin-cobalt, and copper-tin-cobalt-titanium electrodes for batteries and ultra capacitors

    Sergey D. Lopatin;Dmitri A. Brevnov;Robert Z. Bachrach

  • Pulse plating of a low stress film on a solar cell substrate

    Sergey Lopatin;David Eaglesham;John O. Dukovic

  • Process for formation of a wiring network using a porous interlevel dielectric and related structures

    Steven C. Avanzino;Darrell M. Erb;Fei Wang;Sergey Lopatin

Frequent Co-Authors

Minh Van Ngo
Minh Van Ngo Advanced Micro Devices (United States)
Dmitry Lubomirsky
Dmitry Lubomirsky Applied Materials (United States)
S. Simon Wong
S. Simon Wong Stanford University
Gao Liu
Gao Liu Lawrence Berkeley National Laboratory
Donghai Wang
Donghai Wang Pennsylvania State University
Yosi Shacham-Diamand
Yosi Shacham-Diamand Tel Aviv University
Timothy W. Weidman
Timothy W. Weidman Applied Materials (United States)
Frank G. Shi
Frank G. Shi University of California, Irvine
Noel C. MacDonald
Noel C. MacDonald University of California, Santa Barbara
Ran Yi
Ran Yi Pacific Northwest National Laboratory

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