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D-Index & Metrics

Materials Science

D-Index
63
Citations
15021
World Ranking
6136
National Ranking
1565

Suvi Haukka publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Suvi Haukka sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 141 publications — 11th percentile

11% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Suvi Haukka D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Suvi Haukka sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 63 D-Index — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Suvi Haukka is affiliated with ASM International in the United States and specializes in Engineering with a focus on Electrical and Electronic Engineering, Materials Chemistry, and Mechanics of Materials. Their research primarily revolves around semiconductor materials and devices, plasma diagnostics and applications, electronic and structural properties of oxides, metal and thin film mechanics, advancements in semiconductor devices and circuit design, and molecular junctions and nanostructures.

Haukka's recent publications include:

  • Thermal Atomic Layer Etching of Aluminum Oxide (Al2O3) Using Sequential Exposures of Niobium Pentafluoride (NbF5) and Carbon Tetrachloride (CCl4): A Combined Experimental and Density Functional Theory Study of the Etch Mechanism, 2021, Chemistry of Materials
  • Thermal gas-phase etching of titanium nitride (TiN) by thionyl chloride (SOCl2), 2020, Applied Surface Science
  • Combining Experimental and DFT Investigation of the Mechanism Involved in Thermal Etching of Titanium Nitride Using Alternate Exposures of NbF5 and CCl4, or CCl4 Only, 2021, Advanced Materials Interfaces
  • Erratum: "History of atomic layer deposition and its relationship with the American Vacuum Society" [J. Vac. Sci. Technol. A 31, 050818 (2013)], 2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Frequent co-authors in Haukka's research include:

  • Mikko Ritala
  • Varun Sharma
  • Tom Blomberg
  • Michael Givens
  • M. Tuominen

Publications by Haukka have appeared in venues such as:

  • Chemistry of Materials
  • Applied Surface Science
  • Advanced Materials Interfaces
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Best Publications

  • Methods for making a dielectric stack in an integrated circuit

    Suvi P. Haukka;Jarmo Skarp;Marko Tuominen

  • Conformal thin films over textured capacitor electrodes

    Ivo Raaijmakers;Suvi P. Haukka;Ernst H. A. Granneman

  • Method for bottomless deposition of barrier layers in integrated circuit metallization schemes

    Alessandra Satta;Karen Maex;Kai-Erik Elers;Ville Antero Saanila

  • Method of growing oxide thin films

    Eva Tois;Suvi Haukka;Marko Tuominen

  • Trap-assisted tunneling in high permittivity gate dielectric stacks

    Michel Houssa;M Tuominen;M Naili;Valeri Afanas'ev

  • Method of depositing barrier layer from metal gates

    Suvi Haukka;Hannu Huotari

  • Method of growing electrical conductors

    Juhana Kostamo;Pekka J. Soininen;Kai-Erik Elers;Suvi Haukka

  • Method for depositing nanolaminate thin films on sensitive surfaces

    Kai-Erik Elers;Suvi P. Haukka;Ville Antero Saanila;Sari Johanna Kaipio

  • Low temperature gate stack

    Suvi Haukka;Eric Shero;Christophe Pomarede;Jan Hub Maes

  • Deposition of transition metal carbides

    Kai-Erik Elers;Suvi P. Haukka;Ville Antero Saanila;Sari Johanna Kaipio

  • Method for depositing thin films by mixed pulsed CVD and ALD

    Menso Hendriks;Martin Knapp;Suvi Haukka

  • Film Uniformity in Atomic Layer Deposition

    Kai-Erik Elers;Tom Blomberg;Marko Peussa;Brad Aitchison

  • Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

    Charles M. Perkins;Baylor B. Triplett;Paul C. McIntyre;Krishna C. Saraswat

  • Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES

    Antti J. Niskanen;Shang Chen;Viljami Pore;Atsuki Fukazawa

  • PROCESS FOR PRODUCING A THIN FILM COMPRISING SILICON DIOXIDE

    Matero Raija H;Haukka Suvi P

  • Selective formation of metallic films on metallic surfaces

    Suvi P. Haukka;Antti Niskanen;Marko Tuominen

  • Deposition of complex nitride films

    Suvi P. Haukka;Tanja Claasen;Peter Zagwijn

  • Method of producing thin films

    Suvi Haukka;Hannu Huotari

  • Method for forming Si-containing film using two precursors by ALD

    Naoto Tsuji;Atsuki Fukazawa;Noboru Takamure;Suvi Haukka

  • Deposition of silicon dioxide on hydrophobic surfaces

    Suvi Haukka;Marko Tuominen

Frequent Co-Authors

Mikko Ritala
Mikko Ritala University of Helsinki
S. De Gendt
S. De Gendt KU Leuven
M.M. Heyns
M.M. Heyns KU Leuven
Markku Leskelä
Markku Leskelä University of Helsinki
Wilhelmus M. M. Kessels
Wilhelmus M. M. Kessels Eindhoven University of Technology
Ki-Bum Kim
Ki-Bum Kim Seoul National University
Michel Houssa
Michel Houssa KU Leuven
Fred Roozeboom
Fred Roozeboom University of Twente

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