Hugo Bender

Overview

Best Publications

• 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

  B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv

  607
  Citations

• Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices.

  Umberto Celano;Ludovic Goux;Attilio Belmonte;Karl Opsomer

  378
  Citations

• High-k dielectrics for future generation memory devices (Invited Paper)

  J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  326
  Citations

• Nanometer-scale magnetic MnAs particles in GaAs grown by molecular beam epitaxy

  J. De Boeck;R. Oesterholt;A. Van Esch;H. Bender

  315
  Citations

• Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

  Benjamin Vincent;Federica Gencarelli;Hugo Bender;Clement Merckling

  255
  Citations

• Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

  F. Gencarelli;B. Vincent;J. Demeulemeester;A. Vantomme

  247
  Citations

• Direct mapping of strain in a strained silicon transistor by high-resolution electron microscopy.

  Florian Hüe;Martin Hÿtch;Hugo Bender;Florent Houdellier

  221
  Citations

• Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge

  H.Y. Yu;J.D. Chen;M.F. Li;S.J. Lee

  207
  Citations

• Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

  H. Mertens;R. Ritzenthaler;A. Hikavyy;M. S. Kim

  207
  Citations

• Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

  Riikka L. Puurunen;Wilfried Vandervorst;Wim F. A. Besling;Olivier Richard

  202
  Citations

• Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

  Umberto Celano;Ludovic Goux;Robin Degraeve;Andrea Fantini

  201
  Citations

• Ternary rare-earth metal oxide high-k layers on silicon oxide

  C Zhao;T Witters;B Brijs;H Bender

  197
  Citations

• Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies

  Anne Lauwers;An Steegen;Muriel de Potter;Richard Lindsay

  195
  Citations

• Experimental determination of the maximum post-process annealing temperature for standard CMOS wafers

  S. Sedky;A. Witvrouw;H. Bender;K. Baert

  195
  Citations

• Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

  H. Mertens;R. Ritzenthaler;A. Chasin;T. Schram

  155
  Citations

• Comparison between wet HF etching and vapor HF etching for sacrificial oxide removal

  Ann Witvrouw;Bert Du Bois;Piet De Moor;Agnes Verbist

  153
  Citations

• AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

  Kai Cheng;Hu Liang;Marleen Van Hove;Karen Geens

  142
  Citations

• Site Selective Integration of III–V Materials on Si for Nanoscale Logic and Photonic Devices

  Mohanchand Paladugu;Clement Merckling;Roger Loo;Olivier Richard

  130
  Citations

• In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines

  V. Teodorescu;L. Nistor;H. Bender;A. Steegen

  129
  Citations

• TWO-STEP ROOM TEMPERATURE GRAIN GROWTH IN ELECTROPLATED COPPER

  Sywert Brongersma;Emmanuel Richard;Iwan Vervoort;Hugo Bender

  127
  Citations