2009 - IEEE Fellow For contributions to semiconductor device physics, defect engineering, and low frequency noise characterization
Cor Claeys mainly focuses on Optoelectronics, Electrical engineering, Silicon, MOSFET and Condensed matter physics. His study on High-κ dielectric is often connected to Flicker noise as part of broader study in Optoelectronics. His Electrical engineering research includes themes of Silicon on insulator and Communication channel.
His studies deal with areas such as Diode, Substrate and Raman spectroscopy, Analytical chemistry as well as Silicon. His research in MOSFET intersects with topics in Oxide, Wafer, Nanoelectronics, PMOS logic and Function. Cor Claeys interconnects Silicon oxide, Critical radius and Electrical breakdown in the investigation of issues within Condensed matter physics.
Cor Claeys mainly investigates Optoelectronics, Silicon on insulator, Electrical engineering, Silicon and MOSFET. His Optoelectronics study deals with Infrasound intersecting with Noise. As a member of one scientific family, Cor Claeys mostly works in the field of Silicon on insulator, focusing on Gate oxide and, on occasion, Gate dielectric.
His research links Quantum tunnelling with Electrical engineering. His Silicon research integrates issues from Diode, Substrate, Wafer and Analytical chemistry. His MOSFET study combines topics in areas such as Logic gate and Depletion region.
Optoelectronics, Infrasound, Silicon, Noise and Silicon on insulator are his primary areas of study. His Optoelectronics study incorporates themes from Logic gate, Voltage, Threshold voltage, Transistor and Electrical engineering. As part of one scientific family, he deals mainly with the area of Infrasound, narrowing it down to issues related to the Scattering, and often Shallow trench isolation.
His study in Silicon is interdisciplinary in nature, drawing from both Getter, Wafer, CMOS and Semiconductor. His Noise research focuses on subjects like Work function, which are linked to Dielectric. In his study, which falls under the umbrella issue of Silicon on insulator, Strain engineering is strongly linked to Substrate.
His primary scientific interests are in Optoelectronics, Infrasound, Noise, Silicon on insulator and Electrical engineering. Cor Claeys has included themes like Substrate, Scattering and Logic gate in his Optoelectronics study. His studies in Infrasound integrate themes in fields like Metal gate and Transistor.
His Noise research includes elements of Silicon, Work function, Amplitude, MOSFET and Signal. His work deals with themes such as Electronic engineering and Condensed matter physics, which intersect with Silicon. The concepts of his Silicon on insulator study are interwoven with issues in Time domain, Gate oxide and Analytical chemistry.
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Germanium-based technologies : from materials to devices
Cor L. Claeys;E. Simoen.
Radiation Effects in Advanced Semiconductor Materials and Devices
Cor L. Claeys;Eddy R. Simoen.
Silicon-on-insulator 'gate-all-around device'
J.P. Colinge;M.H. Gao;A. Romano-Rodriguez;H. Maes.
international electron devices meeting (1990)
On the flicker noise in submicron silicon MOSFETs
Eddy Simoen;Cor Claeys.
Solid-state Electronics (1999)
A Foveated Retina-Like Sensor Using CCD Technology
J. Van der Spiegel;G. Kreider;C. Claeys;I. Debusschere.
Analog VLSI Implementation of Neural Systems (1989)
Explaining the amplitude of RTS noise in submicrometer MOSFETs
E. Simoen;B. Dierickx;C.L. Claeys;G.J. Declerck.
IEEE Transactions on Electron Devices (1992)
"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS
A. Mercha;J.M. Rafi;E. Simoen;E. Augendre.
IEEE Transactions on Electron Devices (2003)
$1/f$ Noise in Drain and Gate Current of MOSFETs With High- $k$ Gate Stacks
P. Magnone;F. Crupi;G. Giusi;C. Pace.
IEEE Transactions on Device and Materials Reliability (2009)
Low-frequency noise behavior of SiO/sub 2/--HfO/sub 2/ dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness
E. Simoen;A. Mercha;L. Pantisano;C. Claeys.
IEEE Transactions on Electron Devices (2004)
A 1006 element hybrid silicon pixel detector with strobed binary output
F. Anghinolfi;P. Aspell;K. Bass;W. Beusch.
nuclear science symposium and medical imaging conference (1991)
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