World's Best Scientists 2026 revealed!
Jerome Mitard

Jerome Mitard

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
6245
World Ranking
5300
National Ranking
113

Jerome Mitard publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jerome Mitard sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 383 publications — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Jerome Mitard D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jerome Mitard sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Jerome Mitard is affiliated with Imec in Belgium and specializes in the field of Engineering, with a specific focus on Electrical and Electronic Engineering. Their research work primarily addresses advancements in semiconductor devices and circuit design, semiconductor materials and devices, as well as integrated circuits and semiconductor failure analysis.

Their range of research topics includes:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Thin-Film Transistor Technologies
  • Semiconductor materials and interfaces
  • Ferroelectric and Negative Capacitance Devices
  • Silicon Carbide Semiconductor Technologies

Jerome Mitard has contributed extensively to scholarly literature with multiple papers published in prominent venues. Some of their recent works are:

  • Understanding and modelling the PBTI reliability of thin-film IGZO transistors (2021), published in the 2021 IEEE International Electron Devices Meeting (IEDM)
  • Buried Power Rail Integration With FinFETs for Ultimate CMOS Scaling (2020), published in IEEE Transactions on Electron Devices
  • Comparison of Electrical Performance of Co-Integrated Forksheets and Nanosheets Transistors for the 2nm Technological Node and Beyond (2021), published in the 2021 IEEE International Electron Devices Meeting (IEDM)
  • Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors (2021), published in IEEE Transactions on Nuclear Science
  • Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB (2021), published in the 2021 IEEE International Electron Devices Meeting (IEDM)

Collaboration plays an important role in their research, with frequent co-authors including:

  • Naoto Horiguchi
  • Adrian Chasin
  • En Xia Zhang
  • Ronald D. Schrimpf
  • Robert A. Reed

Their publications are often featured in specialized venues, with multiple contributions to:

  • IEEE Transactions on Electron Devices
  • IEEE Transactions on Nuclear Science
  • 2021 IEEE International Electron Devices Meeting (IEDM)
  • Advanced Intelligent Systems
  • ECS Transactions

Jerome Mitard's work situates them at the intersection of materials science and applied electrical engineering, focusing on innovative semiconductor technologies and transistor scaling challenges relevant to emerging technological nodes.

Best Publications

  • Review on high-k dielectrics reliability issues

    G. Ribes;J. Mitard;M. Denais;S. Bruyere

  • Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

    D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard

  • Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters

    M. Casse;L. Thevenod;B. Guillaumot;L. Tosti

  • Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

    A. Belmonte;H. Oh;N. Rassoul;G.L. Donadio

  • Characterization and modeling of hysteresis phenomena in high K dielectrics

    C. Leroux;J. Mitard;G. Ghibaudo;X. Garros

  • Record I ON /I OFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

    J. Mitard;B. De Jaeger;F.E. Leys;G. Hellings

  • Electrical TCAD Simulations of a Germanium pMOSFET Technology

    Geert Hellings;Geert Eneman;Raymond Krom;B De Jaeger

  • Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs

    J. Franco;B. Kaczer;M. Toledano-Luque;Ph. J. Roussel

  • SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices—Part I: NBTI

    J. Franco;B. Kaczer;P. J. Roussel;J. Mitard

  • An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

    N. Waldron;C. Merckling;W. Guo;P. Ong

  • Challenges and opportunities in advanced Ge pMOSFETs

    E Simoen;J Mitard;Geert Hellings;Geert Eneman

  • Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects

    Eddy Simoen;Dennis Han-Chung Lin;A. Alian;G. Brammertz

  • Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors with Reduced Vertical Nanowires Separation, New Work Function Metal Gate Solutions, and DC/AC Performance Optimization

    R. Ritzenthaler;H. Mertens;V. Pena;G. Santoro

  • Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution

    D. Lin;G. Brammertz;S. Sioncke;C. Fleischmann

  • The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-passivated Ge pMOSFETs

    Matty R. Caymax;Frederik Leys;Jerome Mitard;Koen Martens

  • Germanium for advanced CMOS anno 2009: a SWOT analysis

    M. Caymax;G. Eneman;F. Bellenger;C. Merckling

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    M. Heyns;A. Alian;G. Brammertz;M. Caymax

  • Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition

    L. Witters;H. Arimura;F. Sebaai;A. Hikavyy

  • Gate-all-around nanowire device and method for manufacturing such a device

    Jerome Mitard

  • Understanding and modelling the PBTI reliability of thin-film IGZO transistors

    Unknown

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    Marc Heyns;Ali Reza Alian;Guy Brammertz;Matty Caymax

  • Understanding the suppressed charge trapping in relaxed- and strained-Ge/SiO 2 /HfO 2 pMOSFETs and implications for the screening of alternative high-mobility substrate/dielectric CMOS gate stacks

    J. Franco;B. Kaczer;Ph J. Roussel;J. Mitard

  • Geometry Dependence of Total-Dose Effects in Bulk FinFETs

    I. Chatterjee;E. X. Zhang;B. L. Bhuva;R. A. Reed

Frequent Co-Authors

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Related Online Degrees & Career Pathways

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