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Jerome Mitard

Jerome Mitard

Imec
Belgium

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 36 5300 5090 113 109 383 6245

Jerome Mitard publications per year

The chart shows the history of publications by Jerome Mitard between 1989 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Jerome Mitard published across 37 years, from 1989 to 2025, averaging 10.9 papers a year. Output peaked at 38 publications in 2011. 23 of the 403 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1989 to 2025. Vertical axis: number of publications, 0 to 38. Peak 38 publications in 2011. 1989: 1 publication 1990: 0 publications 1991: 0 publications 1992: 0 publications 1993: 0 publications 1994: 0 publications 1995: 0 publications 1996: 0 publications 1997: 0 publications 1998: 0 publications 1999: 0 publications 2000: 0 publications 2001: 0 publications 2002: 0 publications 2003: 0 publications 2004: 4 publications 2005: 3 publications 2006: 11 publications 2007: 5 publications 2008: 13 publications 2009: 28 publications 2010: 29 publications 2011: 38 publications 2012: 32 publications 2013: 30 publications 2014: 22 publications 2015: 27 publications 2016: 38 publications 2017: 17 publications 2018: 13 publications 2019: 16 publications 2020: 17 publications 2021: 17 publications 2022: 10 publications 2023: 9 publications 2024: 8 publications 2025: 15 publications
1989 2025

403 publications in total across all disciplines

View publications per year as a table
Jerome Mitard: publications per year, 1989 to 2025
Year Publications
1989 1
1990 0
1991 0
1992 0
1993 0
1994 0
1995 0
1996 0
1997 0
1998 0
1999 0
2000 0
2001 0
2002 0
2003 0
2004 4
2005 3
2006 11
2007 5
2008 13
2009 28
2010 29
2011 38
2012 32
2013 30
2014 22
2015 27
2016 38
2017 17
2018 13
2019 16
2020 17
2021 17
2022 10
2023 9
2024 8
2025 15
Total 403
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Jerome Mitard publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jerome Mitard sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 374–393 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 383 publications — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187 383
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Jerome Mitard D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jerome Mitard sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 36 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211 36
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Jerome Mitard is affiliated with Imec in Belgium and specializes in the field of Engineering, with a specific focus on Electrical and Electronic Engineering. Their research work primarily addresses advancements in semiconductor devices and circuit design, semiconductor materials and devices, as well as integrated circuits and semiconductor failure analysis.

Their range of research topics includes:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Thin-Film Transistor Technologies
  • Semiconductor materials and interfaces
  • Ferroelectric and Negative Capacitance Devices
  • Silicon Carbide Semiconductor Technologies

Jerome Mitard has contributed extensively to scholarly literature with multiple papers published in prominent venues. Some of their recent works are:

  • Understanding and modelling the PBTI reliability of thin-film IGZO transistors (2021), published in the 2021 IEEE International Electron Devices Meeting (IEDM)
  • Buried Power Rail Integration With FinFETs for Ultimate CMOS Scaling (2020), published in IEEE Transactions on Electron Devices
  • Comparison of Electrical Performance of Co-Integrated Forksheets and Nanosheets Transistors for the 2nm Technological Node and Beyond (2021), published in the 2021 IEEE International Electron Devices Meeting (IEDM)
  • Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors (2021), published in IEEE Transactions on Nuclear Science
  • Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB (2021), published in the 2021 IEEE International Electron Devices Meeting (IEDM)

Collaboration plays an important role in their research, with frequent co-authors including:

  • Naoto Horiguchi
  • Adrian Chasin
  • En Xia Zhang
  • Ronald D. Schrimpf
  • Robert A. Reed

Their publications are often featured in specialized venues, with multiple contributions to:

  • IEEE Transactions on Electron Devices
  • IEEE Transactions on Nuclear Science
  • 2021 IEEE International Electron Devices Meeting (IEDM)
  • Advanced Intelligent Systems
  • ECS Transactions

Jerome Mitard's work situates them at the intersection of materials science and applied electrical engineering, focusing on innovative semiconductor technologies and transistor scaling challenges relevant to emerging technological nodes.

Best Publications

  • Review on high-k dielectrics reliability issues

    G. Ribes;J. Mitard;M. Denais;S. Bruyere

  • Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

    D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard

  • Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters

    M. Casse;L. Thevenod;B. Guillaumot;L. Tosti

  • Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

    A. Belmonte;H. Oh;N. Rassoul;G.L. Donadio

  • Characterization and modeling of hysteresis phenomena in high K dielectrics

    C. Leroux;J. Mitard;G. Ghibaudo;X. Garros

  • Record I ON /I OFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

    J. Mitard;B. De Jaeger;F.E. Leys;G. Hellings

  • Electrical TCAD Simulations of a Germanium pMOSFET Technology

    Geert Hellings;Geert Eneman;Raymond Krom;B De Jaeger

  • Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs

    J. Franco;B. Kaczer;M. Toledano-Luque;Ph. J. Roussel

  • SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices—Part I: NBTI

    J. Franco;B. Kaczer;P. J. Roussel;J. Mitard

  • An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

    N. Waldron;C. Merckling;W. Guo;P. Ong

  • Challenges and opportunities in advanced Ge pMOSFETs

    E Simoen;J Mitard;Geert Hellings;Geert Eneman

  • Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects

    Eddy Simoen;Dennis Han-Chung Lin;A. Alian;G. Brammertz

  • Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors with Reduced Vertical Nanowires Separation, New Work Function Metal Gate Solutions, and DC/AC Performance Optimization

    R. Ritzenthaler;H. Mertens;V. Pena;G. Santoro

  • Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution

    D. Lin;G. Brammertz;S. Sioncke;C. Fleischmann

  • The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-passivated Ge pMOSFETs

    Matty R. Caymax;Frederik Leys;Jerome Mitard;Koen Martens

  • Germanium for advanced CMOS anno 2009: a SWOT analysis

    M. Caymax;G. Eneman;F. Bellenger;C. Merckling

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    M. Heyns;A. Alian;G. Brammertz;M. Caymax

  • Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition

    L. Witters;H. Arimura;F. Sebaai;A. Hikavyy

  • Gate-all-around nanowire device and method for manufacturing such a device

    Jerome Mitard

  • Understanding and modelling the PBTI reliability of thin-film IGZO transistors

    Unknown

  • Advancing CMOS beyond the Si roadmap with Ge and III/V devices

    Marc Heyns;Ali Reza Alian;Guy Brammertz;Matty Caymax

  • Understanding the suppressed charge trapping in relaxed- and strained-Ge/SiO 2 /HfO 2 pMOSFETs and implications for the screening of alternative high-mobility substrate/dielectric CMOS gate stacks

    J. Franco;B. Kaczer;Ph J. Roussel;J. Mitard

  • Geometry Dependence of Total-Dose Effects in Bulk FinFETs

    I. Chatterjee;E. X. Zhang;B. L. Bhuva;R. A. Reed

Frequent Co-Authors

Geert Eneman
Geert Eneman Imec
Nadine Collaert
Nadine Collaert Imec
Naoto Horiguchi
Naoto Horiguchi Imec
Roger Loo
Roger Loo Imec
Aaron Thean
Aaron Thean National University of Singapore
Eddy Simoen
Eddy Simoen Ghent University
Guido Groeseneken
Guido Groeseneken Imec
Jacopo Franco
Jacopo Franco Imec
Marc Meuris
Marc Meuris Hasselt University
Hugo Bender
Hugo Bender Imec

External Links

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Related Online Degrees & Career Pathways

For those interested in expanding their knowledge beyond traditional Electronics and Electrical Engineering, exploring the best online instructional design master's programs offers a pathway into the educational technology and training sectors. These programs blend technical expertise with teaching methodologies, ideal for engineers seeking roles in curriculum development or corporate training.

Many students benefit from competency based programs, which focus on mastering specific skills rather than traditional credit hours. This approach is particularly effective for professionals balancing work and study, as it allows for a personalized pace and practical application of knowledge in fields related to electrical technology and innovation.

The flexibility of online education is further enhanced by institutions recognized as the best online college for military spouses, offering support and adaptable scheduling for families on the move. This can be crucial for engineers connected to military communities seeking consistent educational opportunities.

Additionally, online schools with multiple start dates provide increased accessibility, allowing students to begin their studies at intervals that best suit their personal and professional timelines. This model supports continuous learning without long waiting periods, an advantage for quickly advancing careers in the electrical engineering domain.

Best Scientists Citing Jerome Mitard

Eddy Simoen

Eddy Simoen

Ghent University

Publications: 80

Naoto Horiguchi

Naoto Horiguchi

Imec

Publications: 69

Guido Groeseneken

Guido Groeseneken

Imec

Publications: 64

Jacopo Franco

Jacopo Franco

Imec

Publications: 60

Nadine Collaert

Nadine Collaert

Imec

Publications: 60

Ben Kaczer

Ben Kaczer

Imec

Publications: 57

Aaron Thean

Aaron Thean

National University of Singapore

Publications: 53

Tibor Grasser

Tibor Grasser

TU Wien

Publications: 49

Roger Loo

Roger Loo

Imec

Publications: 32

Geert Eneman

Geert Eneman

Imec

Publications: 31

Wilfried Vandervorst

Wilfried Vandervorst

Imec

Publications: 30

Daniel M. Fleetwood

Daniel M. Fleetwood

Vanderbilt University

Publications: 30

Dimitri Linten

Dimitri Linten

Imec

Publications: 30

Cor Claeys

Cor Claeys

KU Leuven

Publications: 30

Asen Asenov

Asen Asenov

University of Glasgow

Publications: 27

Matty Caymax

Matty Caymax

Imec

Publications: 25

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