World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
88
Citations
27683
World Ranking
330
National Ranking
155

Research.com Recognitions

  • 2000 - IEEE Fellow For contributions to the understanding and the modeling of physical mechanisms governing the response of semiconductor devices to radiation exposure.

Overview

Ronald D. Schrimpf is affiliated with Vanderbilt University in the United States. Their primary field of study is Engineering, with a focus on Electrical and Electronic Engineering as the predominant subfield. Additional subfields in their research portfolio include Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, and Atomic and Molecular Physics, and Optics.

The scientist's research explores various topics related to semiconductor technology and radiation effects in electronics. Key topics addressed in their work include:

  • Semiconductor materials and devices
  • Radiation Effects in Electronics
  • Advancements in Semiconductor Devices and Circuit Design
  • Integrated Circuits and Semiconductor Failure Analysis
  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Silicon Carbide Semiconductor Technologies

They have contributed significantly to the literature on radiation effects and semiconductor devices, with notable recent publications including:

  • "Radiation Effects in AlGaN/GaN HEMTs," 2022, IEEE Transactions on Nuclear Science
  • "Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs," 2021, IEEE Transactions on Nuclear Science
  • "Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes," 2023, IEEE Transactions on Nuclear Science
  • "Atomic-displacement threshold energies and defect generation in irradiated β-Ga2O3: A first-principles investigation," 2023, Journal of Applied Physics
  • "Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes," 2023, IEEE Transactions on Nuclear Science

Frequent collaborators include Robert A. Reed, Daniel M. Fleetwood, En Xia Zhang, Michael L. Alles, and Dennis R. Ball. This network of coauthors reflects ongoing collaboration in the fields of semiconductor device reliability and radiation effects.

The most common publication venues for their research are:

  • IEEE Transactions on Nuclear Science
  • Journal of Applied Physics
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • IEEE Transactions on Device and Materials Reliability

Ronald D. Schrimpf's contributions have been recognized by the IEEE, who named them an IEEE Fellow in 2000 for their work advancing the understanding and modeling of physical mechanisms governing semiconductor device responses to radiation exposure.

Best Publications

  • Charge Collection and Charge Sharing in a 130 nm CMOS Technology

    O.A. Amusan;A.F. Witulski;L.W. Massengill;B.L. Bhuva

  • Response of advanced bipolar processes to ionizing radiation

    E.W. Enlow;R.L. Pease;W. Combs;R.D. Schrimpf

  • Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates

    D.M. Fleetwood;S.L. Kosier;R.N. Nowlin;R.D. Schrimpf

  • Physical model for enhanced interface-trap formation at low dose rates

    S.N. Rashkeev;C.R. Cirba;D.M. Fleetwood;R.D. Schrimpf

  • Monte Carlo Simulation of Single Event Effects

    Robert A Weller;Marcus H Mendenhall;Robert A Reed;Ronald D Schrimpf

  • ELDRS in Bipolar Linear Circuits: A Review

    R.L. Pease;R.D. Schrimpf;D.M. Fleetwood

  • Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies

    B. Narasimham;B.L. Bhuva;R.D. Schrimpf;L.W. Massengill

  • Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions

    B.D. Sierawski;J.A. Pellish;R.A. Reed;R.D. Schrimpf

  • Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices

    D.M. Fleetwood;H.D. Xiong;Z.-Y. Lu;C.J. Nicklaw

  • Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides

    D.M. Fleetwood;L.C. Riewe;J.R. Schwank;S.C. Witczak

  • Single event transient pulse widths in digital microcircuits

    M.J. Gadlage;R.D. Schrimpf;J.M. Benedetto;P.H. Eaton

  • Trends in the total-dose response of modern bipolar transistors

    S.L. Kosier;W.E. Combs;A. Wei;R.A. Schrimpf

  • The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

    K.M. Warren;R.A. Weller;M.H. Mendenhall;R.A. Reed

  • Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors

    Xinwen Hu;A.P. Karmarkar;Bongim Jun;D.M. Fleetwood

  • Reactions of hydrogen with Si-SiO/sub 2/ interfaces

    S.T. Pantelides;S.N. Rashkeev;R. Buczko;D.M. Fleetwood

  • The structure, properties, and dynamics of oxygen vacancies in amorphous SiO/sub 2/

    C.J. Nicklaw;Z.-Y. Lu;D.M. Fleetwood;R.D. Schrimpf

  • Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures

    S.C. Witczak;R.D. Schrimpf;D.M. Fleetwood;K.F. Galloway

  • Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides

    M. Turowski;A. Raman;R.D. Schrimpf

  • Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices

    Ronald D. Schrimpf;Daniel M. Fleetwood

  • Analysis of single-event transients in analog circuits

    P. Adell;R.D. Schrimpf;H.J. Barnaby;R. Marec

  • Defects in microelectronic materials and devices

    D. M. Fleetwood;Sokrates T. Pantelides;Ronald D Schrimpf

Frequent Co-Authors

Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Robert A. Reed
Robert A. Reed Vanderbilt University
Sokrates T. Pantelides
Sokrates T. Pantelides Vanderbilt University
Kenneth F. Galloway
Kenneth F. Galloway Vanderbilt University
Lloyd W. Massengill
Lloyd W. Massengill Vanderbilt University
Bharat L. Bhuva
Bharat L. Bhuva Vanderbilt University
Arthur F. Witulski
Arthur F. Witulski Vanderbilt University
Hugh J. Barnaby
Hugh J. Barnaby Arizona State University
R.L. Pease
R.L. Pease Independent Scientist / Consultant, US
John D. Cressler
John D. Cressler Georgia Institute of Technology

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