The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ronald D. Schrimpf sits on this spectrum.
This scientist: 855 publications — 97th percentile
97% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ronald D. Schrimpf sits on this spectrum.
This scientist: 88 D-Index — 95th percentile
95% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Ronald D. Schrimpf is affiliated with Vanderbilt University in the United States. Their primary field of study is Engineering, with a focus on Electrical and Electronic Engineering as the predominant subfield. Additional subfields in their research portfolio include Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, and Atomic and Molecular Physics, and Optics.
The scientist's research explores various topics related to semiconductor technology and radiation effects in electronics. Key topics addressed in their work include:
They have contributed significantly to the literature on radiation effects and semiconductor devices, with notable recent publications including:
Frequent collaborators include Robert A. Reed, Daniel M. Fleetwood, En Xia Zhang, Michael L. Alles, and Dennis R. Ball. This network of coauthors reflects ongoing collaboration in the fields of semiconductor device reliability and radiation effects.
The most common publication venues for their research are:
Ronald D. Schrimpf's contributions have been recognized by the IEEE, who named them an IEEE Fellow in 2000 for their work advancing the understanding and modeling of physical mechanisms governing semiconductor device responses to radiation exposure.
O.A. Amusan;A.F. Witulski;L.W. Massengill;B.L. Bhuva
E.W. Enlow;R.L. Pease;W. Combs;R.D. Schrimpf
D.M. Fleetwood;S.L. Kosier;R.N. Nowlin;R.D. Schrimpf
S.N. Rashkeev;C.R. Cirba;D.M. Fleetwood;R.D. Schrimpf
Robert A Weller;Marcus H Mendenhall;Robert A Reed;Ronald D Schrimpf
R.L. Pease;R.D. Schrimpf;D.M. Fleetwood
B. Narasimham;B.L. Bhuva;R.D. Schrimpf;L.W. Massengill
B.D. Sierawski;J.A. Pellish;R.A. Reed;R.D. Schrimpf
D.M. Fleetwood;H.D. Xiong;Z.-Y. Lu;C.J. Nicklaw
D.M. Fleetwood;L.C. Riewe;J.R. Schwank;S.C. Witczak
M.J. Gadlage;R.D. Schrimpf;J.M. Benedetto;P.H. Eaton
S.L. Kosier;W.E. Combs;A. Wei;R.A. Schrimpf
K.M. Warren;R.A. Weller;M.H. Mendenhall;R.A. Reed
Xinwen Hu;A.P. Karmarkar;Bongim Jun;D.M. Fleetwood
S.T. Pantelides;S.N. Rashkeev;R. Buczko;D.M. Fleetwood
C.J. Nicklaw;Z.-Y. Lu;D.M. Fleetwood;R.D. Schrimpf
S.C. Witczak;R.D. Schrimpf;D.M. Fleetwood;K.F. Galloway
M. Turowski;A. Raman;R.D. Schrimpf
Ronald D. Schrimpf;Daniel M. Fleetwood
P. Adell;R.D. Schrimpf;H.J. Barnaby;R. Marec
D. M. Fleetwood;Sokrates T. Pantelides;Ronald D Schrimpf
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