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Lloyd W. Massengill

Lloyd W. Massengill

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
68
Citations
14774
World Ranking
1037
National Ranking
438

Lloyd W. Massengill publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Lloyd W. Massengill sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 343 publications — 66th percentile

66% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Lloyd W. Massengill D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Lloyd W. Massengill sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 68 D-Index — 86th percentile

86% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2005 - IEEE Fellow For contributions to radiation effects in microelectronics.

Overview

Lloyd W. Massengill is affiliated with Vanderbilt University in the United States and has contributed significantly to the field of engineering, particularly focusing on electrical and electronic engineering.

Their research spans several subfields, including hardware and architecture, materials chemistry, computer networks and communications, and information systems. The main emphasis of Massengill's work is within the domain of radiation effects in electronics and semiconductor materials and devices, extending to advancements in semiconductor devices and circuit design. Investigations further cover integrated circuits and semiconductor failure analysis as well as VLSI design and testing methods, including low-power high-performance VLSI and analog circuit testing. There is also work related to advancements in phase-locked loop (PLL) and voltage-controlled oscillator (VCO) technologies.

Massengill has a considerable publication record, predominantly appearing in IEEE Transactions on Nuclear Science, with 18 publications in this venue. Their notable recent papers include:

  • "Analysis of Single-Event Transients (SETs) Using Machine Learning (ML) and Ionizing Radiation Effects Spectroscopy (IRES)", 2021, IEEE Transactions on Nuclear Science
  • "Single-Event Latchup in a 7-nm Bulk FinFET Technology", 2021, IEEE Transactions on Nuclear Science
  • "Single-Event Upsets in a 7-nm Bulk FinFET Technology With Analysis of Threshold Voltage Dependence", 2021, IEEE Transactions on Nuclear Science
  • "Mitigating Total-Ionizing-Dose-Induced Threshold-Voltage Shifts Using Back-Gate Biasing in 22-nm FD-SOI Transistors", 2022, IEEE Transactions on Nuclear Science
  • "Radiation Hardened by Design Subsampling Phase-Locked Loop Techniques in PD-SOI", 2020, IEEE Transactions on Nuclear Science

Massengill collaborates frequently with several co-authors, reflecting research partnerships in related fields:

  • J. S. Kauppila
  • Dennis R. Ball
  • Michael L. Alles
  • James M. Trippe
  • T. D. Haeffner

The scientist was recognized as an IEEE Fellow in 2005 for contributions to radiation effects in microelectronics.

Best Publications

  • Basic mechanisms and modeling of single-event upset in digital microelectronics

    P.E. Dodd;L.W. Massengill

  • Charge Collection and Charge Sharing in a 130 nm CMOS Technology

    O.A. Amusan;A.F. Witulski;L.W. Massengill;B.L. Bhuva

  • Single Event Transients in Digital CMOS—A Review

    V. Ferlet-Cavrois;L. W. Massengill;P. Gouker

  • Monte Carlo Simulation of Single Event Effects

    Robert A Weller;Marcus H Mendenhall;Robert A Reed;Ronald D Schrimpf

  • Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies

    B. Narasimham;B.L. Bhuva;R.D. Schrimpf;L.W. Massengill

  • Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design

    B.D. Olson;D.R. Ball;K.M. Warren;L.W. Massengill

  • The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

    K.M. Warren;R.A. Weller;M.H. Mendenhall;R.A. Reed

  • Impact of scaling on soft-error rates in commercial microprocessors

    N. Seifert;Xiaowei Zhu;L.W. Massengill

  • Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits

    J.R. Ahlbin;L.W. Massengill;B.L. Bhuva;B. Narasimham

  • A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

    J.S. Kauppila;A.L. Sternberg;M.L. Alles;A.M. Francis

  • Models and Algorithmic Limits for an ECC-Based Approach to Hardening Sub-100-nm SRAMs

    M.A. Bajura;Y.. Boulghassoul;R.. Naseer;S.. DasGupta

  • Comparison of Combinational and Sequential Error Rates for a Deep Submicron Process

    N. N. Mahatme;S. Jagannathan;T. D. Loveless;L. W. Massengill

  • RHBD techniques for mitigating effects of single-event hits using guard-gates

    A. Balasubramanian;B.L. Bhuva;J.D. Black;L.W. Massengill

  • Neutron- and Proton-Induced Single Event Upsets for D- and DICE-Flip/Flop Designs at a 40 nm Technology Node

    T D Loveless;S Jagannathan;T Reece;J Chetia

  • On-Chip Characterization of Single-Event Transient Pulsewidths

    B. Narasimham;V. Ramachandran;B.L. Bhuva;R.D. Schrimpf

  • Impact of Ion Energy and Species on Single Event Effects Analysis

    R.A. Reed;R.A. Weller;M.H. Mendenhall;J.-M. Lauenstein

  • Single Event Upsets in Deep-Submicrometer Technologies Due to Charge Sharing

    O.A. Amusan;L.W. Massengill;M.P. Baze;A.L. Sternberg

  • A Hardened-by-Design Technique for RF Digital Phase-Locked Loops

    T.D. Loveless;L.W. Massengill;B.L. Bhuva;W.T. Holman

  • Mitigation Techniques for Single-Event-Induced Charge Sharing in a 90-nm Bulk CMOS Process

    O.A. Amusan;L.W. Massengill;M.P. Baze;B.L. Bhuva

  • HBD layout isolation techniques for multiple node charge collection mitigation

    J.D. Black;A.L. Sternberg;M.L. Alles;A.F. Witulski

Frequent Co-Authors

Bharat L. Bhuva
Bharat L. Bhuva Vanderbilt University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Robert A. Reed
Robert A. Reed Vanderbilt University
Arthur F. Witulski
Arthur F. Witulski Vanderbilt University
Dale McMorrow
Dale McMorrow United States Naval Research Laboratory
Robert A. Weller
Robert A. Weller Woods Hole Oceanographic Institution
M. L. Alles
M. L. Alles Vanderbilt University
Andrew L. Sternberg
Andrew L. Sternberg Vanderbilt University
S. P. Buchner
S. P. Buchner United States Naval Research Laboratory
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University

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