2005 - IEEE Fellow For contributions to radiation effects in microelectronics.
His primary areas of investigation include Electronic engineering, CMOS, Single event upset, Electrical engineering and Optoelectronics. Lloyd W. Massengill has included themes like Pulse-width modulation and Transient in his Electronic engineering study. Lloyd W. Massengill interconnects PMOS logic, Electronic circuit and Logic gate in the investigation of issues within CMOS.
His biological study spans a wide range of topics, including Radiation hardening and Charge sharing, Voltage. His work on Bipolar junction transistor, Integrated circuit and Field-effect transistor as part of general Electrical engineering study is frequently linked to Thermal conduction, bridging the gap between disciplines. As part of the same scientific family, Lloyd W. Massengill usually focuses on Optoelectronics, concentrating on Operational amplifier and intersecting with Circuit extraction, Frequency response, Equivalent circuit and Frequency compensation.
Lloyd W. Massengill mainly investigates Electronic engineering, CMOS, Electrical engineering, Optoelectronics and Single event upset. The various areas that Lloyd W. Massengill examines in his Electronic engineering study include Electronic circuit and Transient. Within one scientific family, he focuses on topics pertaining to PMOS logic under CMOS, and may sometimes address concerns connected to NMOS logic.
Electrical engineering and Silicon on insulator are frequently intertwined in his study. The concepts of his Optoelectronics study are interwoven with issues in Bipolar junction transistor, Irradiation, Threshold voltage, Alpha particle and Laser. The study incorporates disciplines such as Spice and Flip-flop in addition to Single event upset.
Lloyd W. Massengill focuses on Electronic engineering, Voltage, Upset, Logic gate and Electronic circuit. His work carried out in the field of Electronic engineering brings together such families of science as Digital electronics, Topology, Phase-locked loop, Algorithm and Radiation. His Voltage research is multidisciplinary, relying on both Optoelectronics, CMOS, Transient and Soft error.
His Optoelectronics research incorporates elements of Radiation hardening, Electrical engineering, Flip-flop and FLOPS. His work on Pulse-width modulation as part of general Electrical engineering research is often related to RL circuit, thus linking different fields of science. The Logic gate study combines topics in areas such as Function and Transistor.
Lloyd W. Massengill mostly deals with Logic gate, Upset, Electrical engineering, Optoelectronics and Electronic circuit. His Logic gate study results in a more complete grasp of Electronic engineering. His Flip-flop, Threshold voltage, Integrated circuit and Phase-locked loop study, which is part of a larger body of work in Electrical engineering, is frequently linked to Planar, bridging the gap between disciplines.
He focuses mostly in the field of Optoelectronics, narrowing it down to topics relating to Transistor and, in certain cases, Single event upset. His biological study deals with issues like Neutron, which deal with fields such as Static random-access memory. His Transient research includes themes of Soft error, Bipolar transistor biasing, Integrated circuit design and Inverter, Voltage.
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Basic mechanisms and modeling of single-event upset in digital microelectronics
P.E. Dodd;L.W. Massengill.
IEEE Transactions on Nuclear Science (2003)
Charge Collection and Charge Sharing in a 130 nm CMOS Technology
O.A. Amusan;A.F. Witulski;L.W. Massengill;B.L. Bhuva.
IEEE Transactions on Nuclear Science (2006)
Single Event Transients in Digital CMOS—A Review
V. Ferlet-Cavrois;L. W. Massengill;P. Gouker.
IEEE Transactions on Nuclear Science (2013)
Monte Carlo Simulation of Single Event Effects
Robert A Weller;Marcus H Mendenhall;Robert A Reed;Ronald D Schrimpf.
IEEE Transactions on Nuclear Science (2010)
Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies
B. Narasimham;B.L. Bhuva;R.D. Schrimpf;L.W. Massengill.
IEEE Transactions on Nuclear Science (2007)
Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design
B.D. Olson;D.R. Ball;K.M. Warren;L.W. Massengill.
IEEE Transactions on Nuclear Science (2005)
Impact of scaling on soft-error rates in commercial microprocessors
N. Seifert;Xiaowei Zhu;L.W. Massengill.
IEEE Transactions on Nuclear Science (2002)
The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM
K.M. Warren;R.A. Weller;M.H. Mendenhall;R.A. Reed.
IEEE Transactions on Nuclear Science (2005)
Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits
J.R. Ahlbin;L.W. Massengill;B.L. Bhuva;B. Narasimham.
IEEE Transactions on Nuclear Science (2009)
A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit
J.S. Kauppila;A.L. Sternberg;M.L. Alles;A.M. Francis.
IEEE Transactions on Nuclear Science (2009)
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