D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 64 Citations 12,428 313 World Ranking 772 National Ranking 370

Research.com Recognitions

Awards & Achievements

2005 - IEEE Fellow For contributions to radiation effects in microelectronics.

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Integrated circuit
  • Transistor

His primary areas of investigation include Electronic engineering, CMOS, Single event upset, Electrical engineering and Optoelectronics. Lloyd W. Massengill has included themes like Pulse-width modulation and Transient in his Electronic engineering study. Lloyd W. Massengill interconnects PMOS logic, Electronic circuit and Logic gate in the investigation of issues within CMOS.

His biological study spans a wide range of topics, including Radiation hardening and Charge sharing, Voltage. His work on Bipolar junction transistor, Integrated circuit and Field-effect transistor as part of general Electrical engineering study is frequently linked to Thermal conduction, bridging the gap between disciplines. As part of the same scientific family, Lloyd W. Massengill usually focuses on Optoelectronics, concentrating on Operational amplifier and intersecting with Circuit extraction, Frequency response, Equivalent circuit and Frequency compensation.

His most cited work include:

  • Basic mechanisms and modeling of single-event upset in digital microelectronics (807 citations)
  • Charge Collection and Charge Sharing in a 130 nm CMOS Technology (293 citations)
  • Single Event Transients in Digital CMOS—A Review (203 citations)

What are the main themes of his work throughout his whole career to date?

Lloyd W. Massengill mainly investigates Electronic engineering, CMOS, Electrical engineering, Optoelectronics and Single event upset. The various areas that Lloyd W. Massengill examines in his Electronic engineering study include Electronic circuit and Transient. Within one scientific family, he focuses on topics pertaining to PMOS logic under CMOS, and may sometimes address concerns connected to NMOS logic.

Electrical engineering and Silicon on insulator are frequently intertwined in his study. The concepts of his Optoelectronics study are interwoven with issues in Bipolar junction transistor, Irradiation, Threshold voltage, Alpha particle and Laser. The study incorporates disciplines such as Spice and Flip-flop in addition to Single event upset.

He most often published in these fields:

  • Electronic engineering (59.38%)
  • CMOS (34.37%)
  • Electrical engineering (30.00%)

What were the highlights of his more recent work (between 2015-2021)?

  • Electronic engineering (59.38%)
  • Voltage (16.56%)
  • Upset (17.50%)

In recent papers he was focusing on the following fields of study:

Lloyd W. Massengill focuses on Electronic engineering, Voltage, Upset, Logic gate and Electronic circuit. His work carried out in the field of Electronic engineering brings together such families of science as Digital electronics, Topology, Phase-locked loop, Algorithm and Radiation. His Voltage research is multidisciplinary, relying on both Optoelectronics, CMOS, Transient and Soft error.

His Optoelectronics research incorporates elements of Radiation hardening, Electrical engineering, Flip-flop and FLOPS. His work on Pulse-width modulation as part of general Electrical engineering research is often related to RL circuit, thus linking different fields of science. The Logic gate study combines topics in areas such as Function and Transistor.

Between 2015 and 2021, his most popular works were:

  • A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes (39 citations)
  • Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance (23 citations)
  • Analysis of Bulk FinFET Structural Effects on Single-Event Cross Sections (21 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Integrated circuit
  • Transistor

Lloyd W. Massengill mostly deals with Logic gate, Upset, Electrical engineering, Optoelectronics and Electronic circuit. His Logic gate study results in a more complete grasp of Electronic engineering. His Flip-flop, Threshold voltage, Integrated circuit and Phase-locked loop study, which is part of a larger body of work in Electrical engineering, is frequently linked to Planar, bridging the gap between disciplines.

He focuses mostly in the field of Optoelectronics, narrowing it down to topics relating to Transistor and, in certain cases, Single event upset. His biological study deals with issues like Neutron, which deal with fields such as Static random-access memory. His Transient research includes themes of Soft error, Bipolar transistor biasing, Integrated circuit design and Inverter, Voltage.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Basic mechanisms and modeling of single-event upset in digital microelectronics

P.E. Dodd;L.W. Massengill.
IEEE Transactions on Nuclear Science (2003)

1300 Citations

Charge Collection and Charge Sharing in a 130 nm CMOS Technology

O.A. Amusan;A.F. Witulski;L.W. Massengill;B.L. Bhuva.
IEEE Transactions on Nuclear Science (2006)

429 Citations

Single Event Transients in Digital CMOS—A Review

V. Ferlet-Cavrois;L. W. Massengill;P. Gouker.
IEEE Transactions on Nuclear Science (2013)

339 Citations

Monte Carlo Simulation of Single Event Effects

Robert A Weller;Marcus H Mendenhall;Robert A Reed;Ronald D Schrimpf.
IEEE Transactions on Nuclear Science (2010)

250 Citations

Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies

B. Narasimham;B.L. Bhuva;R.D. Schrimpf;L.W. Massengill.
IEEE Transactions on Nuclear Science (2007)

209 Citations

Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design

B.D. Olson;D.R. Ball;K.M. Warren;L.W. Massengill.
IEEE Transactions on Nuclear Science (2005)

205 Citations

Impact of scaling on soft-error rates in commercial microprocessors

N. Seifert;Xiaowei Zhu;L.W. Massengill.
IEEE Transactions on Nuclear Science (2002)

195 Citations

The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

K.M. Warren;R.A. Weller;M.H. Mendenhall;R.A. Reed.
IEEE Transactions on Nuclear Science (2005)

190 Citations

Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits

J.R. Ahlbin;L.W. Massengill;B.L. Bhuva;B. Narasimham.
IEEE Transactions on Nuclear Science (2009)

189 Citations

A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

J.S. Kauppila;A.L. Sternberg;M.L. Alles;A.M. Francis.
IEEE Transactions on Nuclear Science (2009)

168 Citations

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