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Lloyd W. Massengill

Lloyd W. Massengill

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
68
Citations
14774
World Ranking
1037
National Ranking
437

Research.com Recognitions

  • 2005 - IEEE Fellow For contributions to radiation effects in microelectronics.

Overview

Lloyd W. Massengill is affiliated with Vanderbilt University in the United States and has contributed significantly to the field of engineering, particularly focusing on electrical and electronic engineering.

Their research spans several subfields, including hardware and architecture, materials chemistry, computer networks and communications, and information systems. The main emphasis of Massengill's work is within the domain of radiation effects in electronics and semiconductor materials and devices, extending to advancements in semiconductor devices and circuit design. Investigations further cover integrated circuits and semiconductor failure analysis as well as VLSI design and testing methods, including low-power high-performance VLSI and analog circuit testing. There is also work related to advancements in phase-locked loop (PLL) and voltage-controlled oscillator (VCO) technologies.

Massengill has a considerable publication record, predominantly appearing in IEEE Transactions on Nuclear Science, with 18 publications in this venue. Their notable recent papers include:

  • "Analysis of Single-Event Transients (SETs) Using Machine Learning (ML) and Ionizing Radiation Effects Spectroscopy (IRES)", 2021, IEEE Transactions on Nuclear Science
  • "Single-Event Latchup in a 7-nm Bulk FinFET Technology", 2021, IEEE Transactions on Nuclear Science
  • "Single-Event Upsets in a 7-nm Bulk FinFET Technology With Analysis of Threshold Voltage Dependence", 2021, IEEE Transactions on Nuclear Science
  • "Mitigating Total-Ionizing-Dose-Induced Threshold-Voltage Shifts Using Back-Gate Biasing in 22-nm FD-SOI Transistors", 2022, IEEE Transactions on Nuclear Science
  • "Radiation Hardened by Design Subsampling Phase-Locked Loop Techniques in PD-SOI", 2020, IEEE Transactions on Nuclear Science

Massengill collaborates frequently with several co-authors, reflecting research partnerships in related fields:

  • J. S. Kauppila
  • Dennis R. Ball
  • Michael L. Alles
  • James M. Trippe
  • T. D. Haeffner

The scientist was recognized as an IEEE Fellow in 2005 for contributions to radiation effects in microelectronics.

Best Publications

  • Basic mechanisms and modeling of single-event upset in digital microelectronics

    P.E. Dodd;L.W. Massengill

  • Charge Collection and Charge Sharing in a 130 nm CMOS Technology

    O.A. Amusan;A.F. Witulski;L.W. Massengill;B.L. Bhuva

  • Single Event Transients in Digital CMOS—A Review

    V. Ferlet-Cavrois;L. W. Massengill;P. Gouker

  • Monte Carlo Simulation of Single Event Effects

    Robert A Weller;Marcus H Mendenhall;Robert A Reed;Ronald D Schrimpf

  • Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies

    B. Narasimham;B.L. Bhuva;R.D. Schrimpf;L.W. Massengill

  • Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design

    B.D. Olson;D.R. Ball;K.M. Warren;L.W. Massengill

  • The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

    K.M. Warren;R.A. Weller;M.H. Mendenhall;R.A. Reed

  • Impact of scaling on soft-error rates in commercial microprocessors

    N. Seifert;Xiaowei Zhu;L.W. Massengill

  • Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits

    J.R. Ahlbin;L.W. Massengill;B.L. Bhuva;B. Narasimham

  • A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

    J.S. Kauppila;A.L. Sternberg;M.L. Alles;A.M. Francis

  • Models and Algorithmic Limits for an ECC-Based Approach to Hardening Sub-100-nm SRAMs

    M.A. Bajura;Y.. Boulghassoul;R.. Naseer;S.. DasGupta

  • Comparison of Combinational and Sequential Error Rates for a Deep Submicron Process

    N. N. Mahatme;S. Jagannathan;T. D. Loveless;L. W. Massengill

  • RHBD techniques for mitigating effects of single-event hits using guard-gates

    A. Balasubramanian;B.L. Bhuva;J.D. Black;L.W. Massengill

  • Neutron- and Proton-Induced Single Event Upsets for D- and DICE-Flip/Flop Designs at a 40 nm Technology Node

    T D Loveless;S Jagannathan;T Reece;J Chetia

  • On-Chip Characterization of Single-Event Transient Pulsewidths

    B. Narasimham;V. Ramachandran;B.L. Bhuva;R.D. Schrimpf

  • Impact of Ion Energy and Species on Single Event Effects Analysis

    R.A. Reed;R.A. Weller;M.H. Mendenhall;J.-M. Lauenstein

  • Single Event Upsets in Deep-Submicrometer Technologies Due to Charge Sharing

    O.A. Amusan;L.W. Massengill;M.P. Baze;A.L. Sternberg

  • A Hardened-by-Design Technique for RF Digital Phase-Locked Loops

    T.D. Loveless;L.W. Massengill;B.L. Bhuva;W.T. Holman

  • Mitigation Techniques for Single-Event-Induced Charge Sharing in a 90-nm Bulk CMOS Process

    O.A. Amusan;L.W. Massengill;M.P. Baze;B.L. Bhuva

  • HBD layout isolation techniques for multiple node charge collection mitigation

    J.D. Black;A.L. Sternberg;M.L. Alles;A.F. Witulski

Frequent Co-Authors

Bharat L. Bhuva
Bharat L. Bhuva Vanderbilt University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Robert A. Reed
Robert A. Reed Vanderbilt University
Arthur F. Witulski
Arthur F. Witulski Vanderbilt University
Dale McMorrow
Dale McMorrow United States Naval Research Laboratory
S. P. Buchner
S. P. Buchner United States Naval Research Laboratory
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
R.L. Pease
R.L. Pease Independent Scientist / Consultant, US
Paul E. Dodd
Paul E. Dodd Sandia National Laboratories
Marty R. Shaneyfelt
Marty R. Shaneyfelt Sandia National Laboratories

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