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J.R. Schwank

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 67 1095 1044 461 425 222 15742

J.R. Schwank publications per year

The chart shows the history of publications by J.R. Schwank between 1981 and 2017, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. J.R. Schwank published across 37 years, from 1981 to 2017, averaging 6.1 papers a year. Output peaked at 14 publications in 2009. 1 of the 225 publications appeared in the last two years.

No. of publications
5 10
Bar chart. Horizontal axis: year, 1981 to 2017. Vertical axis: number of publications, 0 to 14. Peak 14 publications in 2009. 1981: 1 publication 1982: 0 publications 1983: 1 publication 1984: 2 publications 1985: 3 publications 1986: 8 publications 1987: 2 publications 1988: 5 publications 1989: 3 publications 1990: 7 publications 1991: 4 publications 1992: 9 publications 1993: 9 publications 1994: 9 publications 1995: 5 publications 1996: 7 publications 1997: 13 publications 1998: 5 publications 1999: 6 publications 2000: 6 publications 2001: 6 publications 2002: 8 publications 2003: 11 publications 2004: 13 publications 2005: 9 publications 2006: 5 publications 2007: 11 publications 2008: 12 publications 2009: 14 publications 2010: 6 publications 2011: 13 publications 2012: 2 publications 2013: 5 publications 2014: 4 publications 2015: 0 publications 2016: 0 publications 2017: 1 publication
1981 2017

225 publications in total across all disciplines

View publications per year as a table
J.R. Schwank: publications per year, 1981 to 2017
Year Publications
1981 1
1982 0
1983 1
1984 2
1985 3
1986 8
1987 2
1988 5
1989 3
1990 7
1991 4
1992 9
1993 9
1994 9
1995 5
1996 7
1997 13
1998 5
1999 6
2000 6
2001 6
2002 8
2003 11
2004 13
2005 9
2006 5
2007 11
2008 12
2009 14
2010 6
2011 13
2012 2
2013 5
2014 4
2015 0
2016 0
2017 1
Total 225
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J.R. Schwank publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where J.R. Schwank sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 214–233 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 222 publications — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431 222
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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J.R. Schwank D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where J.R. Schwank sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 67 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 67 D-Index — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69 67
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Research.com Recognitions

  • 1994 - IEEE Fellow For contributions to the field of radiation effects on electronic devices and integrated circuits.

Overview

J.R. Schwank is affiliated with Sandia National Laboratories in the United States. The scientist's work has notably contributed to the understanding of radiation effects on electronic devices and integrated circuits, a focus highlighted by recognition as an IEEE Fellow in 1994.

The award citation for IEEE Fellow specifically states the contribution was for advancements in the field of radiation effects on electronic devices and integrated circuits. This area of expertise indicates a focus on how radiation interacts with and impacts semiconductor devices and systems, which is crucial for applications in radiation-rich environments such as space or nuclear facilities.

There are no recent publications, co-authors, or specific research areas listed; however, the affiliation with a national laboratory suggests involvement in applied research and development related to electronics under extreme conditions.

This specialty aligns with broader fields of study in electronics, materials science, and radiation physics. The award and institutional affiliation imply a career engaged with both theoretical and experimental investigations into device behavior and resilience when exposed to ionizing radiation.

The absence of detailed publication and collaboration data limits further elaboration on specific projects or research outcomes. Nonetheless, the recognition by IEEE as a fellow confirms a standing within the professional community focused on electronic materials and device reliability under radiation exposure.

Best Publications

  • Radiation Effects in MOS Oxides

    J.R. Schwank;M.R. Shaneyfelt;D.M. Fleetwood;J.A. Felix

  • Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices

    D. M. Fleetwood;P. S. Winokur;R. A. Reber;T. L. Meisenheimer

  • Correlating the Radiation Response of MOS Capacitors and Transistors

    P. S. Winokur;J. R. Schwank;P. J. McWhorter;P. V. Dressendorfer

  • Radiation effects in SOI technologies

    J.R. Schwank;V. Ferlet-Cavrois;M.R. Shaneyfelt;P. Paillet

  • Device modeling of ferroelectric capacitors

    S. L. Miller;R. D. Nasby;J. R. Schwank;M. S. Rodgers

  • Physical Mechanisms Contributing to Device "Rebound"

    J. R. Schwank;P. S. Winokur;P. J. McWhorter;F. W. Sexton

  • Production and propagation of single-event transients in high-speed digital logic ICs

    P.E. Dodd;M.R. Shaneyfelt;J.A. Felix;J.R. Schwank

  • Current and Future Challenges in Radiation Effects on CMOS Electronics

    P E Dodd;M R Shaneyfelt;J R Schwank;J A Felix

  • Modeling ferroelectric capacitor switching with asymmetric nonperiodic input signals and arbitrary initial conditions

    S. L. Miller;J. R. Schwank;R. D. Nasby;M. S. Rodgers

  • Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments

    D.M. Fleetwood;P.S. Winokur;J.R. Schwank

  • Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices

    M.R. Shaneyfelt;D.M. Fleetwood;J.R. Schwank;K.L. Hughes

  • SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments

    P.E. Dodd;A.R. Shaneyfelt;K.M. Horn;D.S. Walsh

  • Border traps: issues for MOS radiation response and long-term reliability

    D.M. Fleetwood;M.R. Shaneyfelt;W.L. Warren;J.R. Schwank

  • Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance

    J. R. Schwank;M. R. Shaneyfelt;P. E. Dodd

  • Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides

    D.M. Fleetwood;L.C. Riewe;J.R. Schwank;S.C. Witczak

  • Non-volatile memory device based on mobile protons in SiO 2 thin films

    K. Vanheusden;W. L. Warren;R. A. B. Devine;D. M. Fleetwood

  • Correlation of Radiation Effects in Transistors and Integrated Circuits

    Fred W. Sexton;James R. Schwank

  • Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

    V. Ferlet-Cavrois;P. Paillet;M. Gaillardin;D. Lambert

  • Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

    D.F. Heidel;P.W. Marshall;J.A. Pellish;K.P. Rodbell

  • Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices

    M.R. Shaneyfelt;J.R. Schwank;D.M. Fleetwood;P.S. Winokur

  • Mechanisms for radiation dose-rate sensitivity of bipolar transistors

    H.P. Hjalmarson;R.L. Pease;S.C. Witczak;M.R. Shaneyfelt

Frequent Co-Authors

Marty R. Shaneyfelt
Marty R. Shaneyfelt Sandia National Laboratories
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Paul E. Dodd
Paul E. Dodd Sandia National Laboratories
P.S. Winokur
P.S. Winokur Sandia National Laboratories
P. Paillet
P. Paillet French Alternative Energies and Atomic Energy Commission (CEA)
William L. Warren
William L. Warren Sanofi Pasteur
F.W. Sexton
F.W. Sexton Sandia National Laboratories
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
R.L. Pease
R.L. Pease Independent Scientist / Consultant, US
Paul W. Marshall
Paul W. Marshall United States Naval Research Laboratory

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