The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where J.R. Schwank sits on this spectrum.
This scientist: 222 publications — 37th percentile
37% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where J.R. Schwank sits on this spectrum.
This scientist: 67 D-Index — 85th percentile
85% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
J.R. Schwank is affiliated with Sandia National Laboratories in the United States. The scientist's work has notably contributed to the understanding of radiation effects on electronic devices and integrated circuits, a focus highlighted by recognition as an IEEE Fellow in 1994.
The award citation for IEEE Fellow specifically states the contribution was for advancements in the field of radiation effects on electronic devices and integrated circuits. This area of expertise indicates a focus on how radiation interacts with and impacts semiconductor devices and systems, which is crucial for applications in radiation-rich environments such as space or nuclear facilities.
There are no recent publications, co-authors, or specific research areas listed; however, the affiliation with a national laboratory suggests involvement in applied research and development related to electronics under extreme conditions.
This specialty aligns with broader fields of study in electronics, materials science, and radiation physics. The award and institutional affiliation imply a career engaged with both theoretical and experimental investigations into device behavior and resilience when exposed to ionizing radiation.
The absence of detailed publication and collaboration data limits further elaboration on specific projects or research outcomes. Nonetheless, the recognition by IEEE as a fellow confirms a standing within the professional community focused on electronic materials and device reliability under radiation exposure.
J.R. Schwank;M.R. Shaneyfelt;D.M. Fleetwood;J.A. Felix
D. M. Fleetwood;P. S. Winokur;R. A. Reber;T. L. Meisenheimer
P. S. Winokur;J. R. Schwank;P. J. McWhorter;P. V. Dressendorfer
J.R. Schwank;V. Ferlet-Cavrois;M.R. Shaneyfelt;P. Paillet
S. L. Miller;R. D. Nasby;J. R. Schwank;M. S. Rodgers
J. R. Schwank;P. S. Winokur;P. J. McWhorter;F. W. Sexton
P.E. Dodd;M.R. Shaneyfelt;J.A. Felix;J.R. Schwank
P E Dodd;M R Shaneyfelt;J R Schwank;J A Felix
S. L. Miller;J. R. Schwank;R. D. Nasby;M. S. Rodgers
D.M. Fleetwood;P.S. Winokur;J.R. Schwank
M.R. Shaneyfelt;D.M. Fleetwood;J.R. Schwank;K.L. Hughes
P.E. Dodd;A.R. Shaneyfelt;K.M. Horn;D.S. Walsh
D.M. Fleetwood;M.R. Shaneyfelt;W.L. Warren;J.R. Schwank
J. R. Schwank;M. R. Shaneyfelt;P. E. Dodd
D.M. Fleetwood;L.C. Riewe;J.R. Schwank;S.C. Witczak
K. Vanheusden;W. L. Warren;R. A. B. Devine;D. M. Fleetwood
Fred W. Sexton;James R. Schwank
V. Ferlet-Cavrois;P. Paillet;M. Gaillardin;D. Lambert
D.F. Heidel;P.W. Marshall;J.A. Pellish;K.P. Rodbell
M.R. Shaneyfelt;J.R. Schwank;D.M. Fleetwood;P.S. Winokur
H.P. Hjalmarson;R.L. Pease;S.C. Witczak;M.R. Shaneyfelt
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