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Electronics and Electrical Engineering

D-Index
67
Citations
15742
World Ranking
1095
National Ranking
460

Research.com Recognitions

  • 1994 - IEEE Fellow For contributions to the field of radiation effects on electronic devices and integrated circuits.

Overview

J.R. Schwank is affiliated with Sandia National Laboratories in the United States. The scientist's work has notably contributed to the understanding of radiation effects on electronic devices and integrated circuits, a focus highlighted by recognition as an IEEE Fellow in 1994.

The award citation for IEEE Fellow specifically states the contribution was for advancements in the field of radiation effects on electronic devices and integrated circuits. This area of expertise indicates a focus on how radiation interacts with and impacts semiconductor devices and systems, which is crucial for applications in radiation-rich environments such as space or nuclear facilities.

There are no recent publications, co-authors, or specific research areas listed; however, the affiliation with a national laboratory suggests involvement in applied research and development related to electronics under extreme conditions.

This specialty aligns with broader fields of study in electronics, materials science, and radiation physics. The award and institutional affiliation imply a career engaged with both theoretical and experimental investigations into device behavior and resilience when exposed to ionizing radiation.

The absence of detailed publication and collaboration data limits further elaboration on specific projects or research outcomes. Nonetheless, the recognition by IEEE as a fellow confirms a standing within the professional community focused on electronic materials and device reliability under radiation exposure.

Best Publications

  • Radiation Effects in MOS Oxides

    J.R. Schwank;M.R. Shaneyfelt;D.M. Fleetwood;J.A. Felix

  • Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices

    D. M. Fleetwood;P. S. Winokur;R. A. Reber;T. L. Meisenheimer

  • Correlating the Radiation Response of MOS Capacitors and Transistors

    P. S. Winokur;J. R. Schwank;P. J. McWhorter;P. V. Dressendorfer

  • Radiation effects in SOI technologies

    J.R. Schwank;V. Ferlet-Cavrois;M.R. Shaneyfelt;P. Paillet

  • Device modeling of ferroelectric capacitors

    S. L. Miller;R. D. Nasby;J. R. Schwank;M. S. Rodgers

  • Physical Mechanisms Contributing to Device "Rebound"

    J. R. Schwank;P. S. Winokur;P. J. McWhorter;F. W. Sexton

  • Production and propagation of single-event transients in high-speed digital logic ICs

    P.E. Dodd;M.R. Shaneyfelt;J.A. Felix;J.R. Schwank

  • Current and Future Challenges in Radiation Effects on CMOS Electronics

    P E Dodd;M R Shaneyfelt;J R Schwank;J A Felix

  • Modeling ferroelectric capacitor switching with asymmetric nonperiodic input signals and arbitrary initial conditions

    S. L. Miller;J. R. Schwank;R. D. Nasby;M. S. Rodgers

  • Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments

    D.M. Fleetwood;P.S. Winokur;J.R. Schwank

  • Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices

    M.R. Shaneyfelt;D.M. Fleetwood;J.R. Schwank;K.L. Hughes

  • SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments

    P.E. Dodd;A.R. Shaneyfelt;K.M. Horn;D.S. Walsh

  • Border traps: issues for MOS radiation response and long-term reliability

    D.M. Fleetwood;M.R. Shaneyfelt;W.L. Warren;J.R. Schwank

  • Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance

    J. R. Schwank;M. R. Shaneyfelt;P. E. Dodd

  • Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides

    D.M. Fleetwood;L.C. Riewe;J.R. Schwank;S.C. Witczak

  • Non-volatile memory device based on mobile protons in SiO 2 thin films

    K. Vanheusden;W. L. Warren;R. A. B. Devine;D. M. Fleetwood

  • Correlation of Radiation Effects in Transistors and Integrated Circuits

    Fred W. Sexton;James R. Schwank

  • Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

    V. Ferlet-Cavrois;P. Paillet;M. Gaillardin;D. Lambert

  • Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

    D.F. Heidel;P.W. Marshall;J.A. Pellish;K.P. Rodbell

  • Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices

    M.R. Shaneyfelt;J.R. Schwank;D.M. Fleetwood;P.S. Winokur

  • Mechanisms for radiation dose-rate sensitivity of bipolar transistors

    H.P. Hjalmarson;R.L. Pease;S.C. Witczak;M.R. Shaneyfelt

Frequent Co-Authors

Marty R. Shaneyfelt
Marty R. Shaneyfelt Sandia National Laboratories
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Paul E. Dodd
Paul E. Dodd Sandia National Laboratories
P.S. Winokur
P.S. Winokur Sandia National Laboratories
P. Paillet
P. Paillet French Alternative Energies and Atomic Energy Commission (CEA)
William L. Warren
William L. Warren Sanofi Pasteur
F.W. Sexton
F.W. Sexton Sandia National Laboratories
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
R.L. Pease
R.L. Pease Independent Scientist / Consultant, US
Paul W. Marshall
Paul W. Marshall United States Naval Research Laboratory

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