World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
5009
World Ranking
4774
National Ranking
1669

Overview

F.W. Sexton is affiliated with Sandia National Laboratories in the United States. Their professional background and activities are centered around this institution, which is known for its research and development in national security, energy, and technology innovation.

There are no recent papers, co-authors, or publication venues listed for F.W. Sexton. Additionally, no information on book publications, main fields or subfields of study, or main topics of work is available. Similarly, there are no recorded awards associated with this researcher.

Due to the limited data on research contributions, publications, and collaborations, details on Sexton's specific areas of expertise or academic focus cannot be further described beyond the known institutional affiliation.

Best Publications

  • Physical Mechanisms Contributing to Device "Rebound"

    J. R. Schwank;P. S. Winokur;P. J. McWhorter;F. W. Sexton

  • Destructive single-event effects in semiconductor devices and ICs

    F.W. Sexton

  • SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments

    P.E. Dodd;A.R. Shaneyfelt;K.M. Horn;D.S. Walsh

  • Critical charge concepts for CMOS SRAMs

    P.E. Dodd;F.W. Sexton

  • Correlation of Radiation Effects in Transistors and Integrated Circuits

    Fred W. Sexton;James R. Schwank

  • Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices

    M.R. Shaneyfelt;J.R. Schwank;D.M. Fleetwood;P.S. Winokur

  • Impact of technology trends on SEU in CMOS SRAMs

    P.E. Dodd;F.W. Sexton;G.L. Hash;M.R. Shaneyfelt

  • Three-dimensional simulation of charge collection and multiple-bit upset in Si devices

    P.E. Dodd;F.W. Sexton;P.S. Winokur

  • Single event gate rupture in thin gate oxides

    F.W. Sexton;D.M. Fleetwood;M.R. Shaneyfelt;P.E. Dodd

  • Precursor ion damage and angular dependence of single event gate rupture in thin oxides

    F.W. Sexton;D.M. Fleetwood;M.R. Shaneyfelt;P.E. Dodd

  • Effects of particle energy on proton-induced single-event latchup

    J.R. Schwank;M.R. Shaneyfelt;J. Baggio;P.E. Dodd

  • Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing

    P. S. Winokur;F. W. Sexton;J. R. Schwank;D. M. Fleetwood

  • Impact of ion energy on single-event upset

    P.E. Dodd;O. Musseau;M.R. Shaneyfelt;F.W. Sexton

  • Total-Dose Failure Mechanisms of Integrated Circuits in Laboratory and Space Environments

    P. S. Winokur;F. W. Sexton;G. L. Hash;D. C. Turpin

  • Radiation-Induced Interface-State Generation in MOS Devices

    J. R. Schwank;P. S. Winokur;F. W. Sexton;D. M. Fleetwood

  • The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate

    N. A. Dodds;M. J. Martinez;P. E. Dodd;M. R. Shaneyfelt

  • Microbeam studies of single-event effects

    F.W. Sexton

  • Theory and application of dual-transistor charge separation analysis

    D.M. Fleetwood;M.R. Shaneyfelt;J.R. Schwank;P.S. Winokur

  • Nuclear microprobe imaging of single-event upsets

    K.M. Horn;B.L. Doyle;F.W. Sexton

  • Charge collection and SEU from angled ion strikes

    P.E. Dodd;M.R. Shaneyfelt;F.W. Sexton

Frequent Co-Authors

P.S. Winokur
P.S. Winokur Sandia National Laboratories
Marty R. Shaneyfelt
Marty R. Shaneyfelt Sandia National Laboratories
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
J.R. Schwank
J.R. Schwank Sandia National Laboratories
Paul E. Dodd
Paul E. Dodd Sandia National Laboratories
Robert A. Reed
Robert A. Reed Vanderbilt University
P. Paillet
P. Paillet French Alternative Energies and Atomic Energy Commission (CEA)
Mark B. H. Breese
Mark B. H. Breese National University of Singapore
Lloyd W. Massengill
Lloyd W. Massengill Vanderbilt University
Martin L. Green
Martin L. Green National Institute of Standards and Technology

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