D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 46 Citations 8,595 162 World Ranking 8151 National Ranking 2134

Research.com Recognitions

Awards & Achievements

2011 - Fellow of the Materials Research Society

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Organic chemistry
  • Oxygen

Martin L. Green focuses on Silicon, Gate oxide, Analytical chemistry, Chemical vapor deposition and Oxide. He combines subjects such as Field-effect transistor, Monolayer, Nanotechnology and Boron with his study of Silicon. His Gate oxide research is multidisciplinary, relying on both Optoelectronics, Dielectric and MOSFET.

His research in Optoelectronics intersects with topics in Substrate, Gate dielectric, Electrical engineering and Capacitor. Martin L. Green combines subjects such as Nuclear reaction analysis, Atmospheric temperature range, Polycrystalline silicon and Thermal oxidation with his study of Analytical chemistry. His Chemical vapor deposition study combines topics from a wide range of disciplines, such as Thin film, Atomic layer deposition, Electron beam-induced current, Annealing and Dislocation.

His most cited work include:

  • Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates (701 citations)
  • Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits (682 citations)
  • Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films (232 citations)

What are the main themes of his work throughout his whole career to date?

Martin L. Green mainly focuses on Optoelectronics, Analytical chemistry, Silicon, Dielectric and Thin film. His studies deal with areas such as Pulsed laser deposition, MOSFET, Electronic engineering, Electrical engineering and Gate oxide as well as Optoelectronics. His Analytical chemistry study integrates concerns from other disciplines, such as Oxide, Nitrogen, Seebeck coefficient, Annealing and Nuclear reaction analysis.

His research investigates the connection with Silicon and areas like Inorganic chemistry which intersect with concerns in Chemical engineering and Oxide thin-film transistor. Martin L. Green has included themes like Amorphous solid, Rapid thermal processing, Gate dielectric and Nanotechnology in his Dielectric study. As a member of one scientific family, Martin L. Green mostly works in the field of Thin film, focusing on Chemical vapor deposition and, on occasion, Atomic layer deposition.

He most often published in these fields:

  • Optoelectronics (33.95%)
  • Analytical chemistry (32.10%)
  • Silicon (24.69%)

What were the highlights of his more recent work (between 2013-2021)?

  • Thin film (19.75%)
  • Optoelectronics (33.95%)
  • Throughput (4.32%)

In recent papers he was focusing on the following fields of study:

Martin L. Green mostly deals with Thin film, Optoelectronics, Throughput, Thermochromism and Analytical chemistry. His work carried out in the field of Thin film brings together such families of science as Ionic bonding, Crystallinity, Dielectric and Monoclinic crystal system. The concepts of his Optoelectronics study are interwoven with issues in Impurity, Ultraviolet visible spectroscopy and Near-infrared spectroscopy.

In his study, Infrared reflectivity, Telecommunications, Metal–insulator transition, Energy and Tetragonal crystal system is strongly linked to Phase transition, which falls under the umbrella field of Thermochromism. His Analytical chemistry research incorporates themes from Instrumentation, Thermoelectric effect and Oxide. His research investigates the link between Nanotechnology and topics such as Electrical resistivity and conductivity that cross with problems in Electrical resistance and conductance and Thermal conductivity.

Between 2013 and 2021, his most popular works were:

  • Fulfilling the promise of the materials genome initiative with high-throughput experimental methodologies (127 citations)
  • The 2019 materials by design roadmap (122 citations)
  • High-Throughput Measurements of Thermochromic Behavior in V1–xNbxO2 Combinatorial Thin Film Libraries (17 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Organic chemistry
  • Oxygen

His primary scientific interests are in Analytical chemistry, Systems engineering, Characterization, Materials informatics and Materials design. Martin L. Green focuses mostly in the field of Analytical chemistry, narrowing it down to matters related to Instrumentation and, in some cases, Thermal contact. Systems engineering and Experimental data are frequently intertwined in his study.

His Characterization studies intersect with other subjects such as Genome, Lower cost and Throughput. His Measure research includes a combination of various areas of study, such as Stability, Nuclear engineering, Semiconductor materials, Metrology and Electronic engineering. His Stability study frequently links to other fields, such as Thermoelectric materials.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

M. L. Green;E. P. Gusev;R. Degraeve;Eric Garfunkel.
Journal of Applied Physics (2001)

1111 Citations

Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates

E. A. Fitzgerald;Y.‐H. Xie;M. L. Green;D. Brasen.
Applied Physics Letters (1991)

933 Citations

Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films

M. L. Green;M. E. Gross;L. E. Papa;K. J. Schnoes.
Journal of The Electrochemical Society (1985)

301 Citations

Growth and characterization of ultrathin nitrided silicon oxide films

E. P. Gusev;H.-C. Lu;E. L. Garfunkel;T. Gustafsson.
Ibm Journal of Research and Development (1999)

276 Citations

Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices

M. L. Ostraat;J. W. De Blauwe;M. L. Green;L. D. Bell.
Applied Physics Letters (2001)

253 Citations

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

Martin L. Green;Ichiro Takeuchi;Jason R. Hattrick-Simpers.
Journal of Applied Physics (2013)

235 Citations

Semiconductor heterostructure devices with strained semiconductor layers

Daniel Brasen;Eugene A. Fitzgerald;Martin L. Green;Donald P. Monroe.
(1993)

234 Citations

The 2019 materials by design roadmap

Kirstin Alberi;Marco Buongiorno Nardelli;Andriy Zakutayev;Lubos Mitas.
Journal of Physics D (2019)

227 Citations

Fulfilling the promise of the materials genome initiative with high-throughput experimental methodologies

M. L. Green;C. L. Choi;J. R. Hattrick-Simpers;A. M. Joshi.
Applied physics reviews (2017)

213 Citations

The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

J.M. Hergenrother;D. Monroe;F.P. Klemens;G.R. Weber.
international electron devices meeting (1999)

203 Citations

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