2011 - Fellow of the Materials Research Society
Martin L. Green focuses on Silicon, Gate oxide, Analytical chemistry, Chemical vapor deposition and Oxide. He combines subjects such as Field-effect transistor, Monolayer, Nanotechnology and Boron with his study of Silicon. His Gate oxide research is multidisciplinary, relying on both Optoelectronics, Dielectric and MOSFET.
His research in Optoelectronics intersects with topics in Substrate, Gate dielectric, Electrical engineering and Capacitor. Martin L. Green combines subjects such as Nuclear reaction analysis, Atmospheric temperature range, Polycrystalline silicon and Thermal oxidation with his study of Analytical chemistry. His Chemical vapor deposition study combines topics from a wide range of disciplines, such as Thin film, Atomic layer deposition, Electron beam-induced current, Annealing and Dislocation.
Martin L. Green mainly focuses on Optoelectronics, Analytical chemistry, Silicon, Dielectric and Thin film. His studies deal with areas such as Pulsed laser deposition, MOSFET, Electronic engineering, Electrical engineering and Gate oxide as well as Optoelectronics. His Analytical chemistry study integrates concerns from other disciplines, such as Oxide, Nitrogen, Seebeck coefficient, Annealing and Nuclear reaction analysis.
His research investigates the connection with Silicon and areas like Inorganic chemistry which intersect with concerns in Chemical engineering and Oxide thin-film transistor. Martin L. Green has included themes like Amorphous solid, Rapid thermal processing, Gate dielectric and Nanotechnology in his Dielectric study. As a member of one scientific family, Martin L. Green mostly works in the field of Thin film, focusing on Chemical vapor deposition and, on occasion, Atomic layer deposition.
Martin L. Green mostly deals with Thin film, Optoelectronics, Throughput, Thermochromism and Analytical chemistry. His work carried out in the field of Thin film brings together such families of science as Ionic bonding, Crystallinity, Dielectric and Monoclinic crystal system. The concepts of his Optoelectronics study are interwoven with issues in Impurity, Ultraviolet visible spectroscopy and Near-infrared spectroscopy.
In his study, Infrared reflectivity, Telecommunications, Metal–insulator transition, Energy and Tetragonal crystal system is strongly linked to Phase transition, which falls under the umbrella field of Thermochromism. His Analytical chemistry research incorporates themes from Instrumentation, Thermoelectric effect and Oxide. His research investigates the link between Nanotechnology and topics such as Electrical resistivity and conductivity that cross with problems in Electrical resistance and conductance and Thermal conductivity.
His primary scientific interests are in Analytical chemistry, Systems engineering, Characterization, Materials informatics and Materials design. Martin L. Green focuses mostly in the field of Analytical chemistry, narrowing it down to matters related to Instrumentation and, in some cases, Thermal contact. Systems engineering and Experimental data are frequently intertwined in his study.
His Characterization studies intersect with other subjects such as Genome, Lower cost and Throughput. His Measure research includes a combination of various areas of study, such as Stability, Nuclear engineering, Semiconductor materials, Metrology and Electronic engineering. His Stability study frequently links to other fields, such as Thermoelectric materials.
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Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
M. L. Green;E. P. Gusev;R. Degraeve;Eric Garfunkel.
Journal of Applied Physics (2001)
Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates
E. A. Fitzgerald;Y.‐H. Xie;M. L. Green;D. Brasen.
Applied Physics Letters (1991)
Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films
M. L. Green;M. E. Gross;L. E. Papa;K. J. Schnoes.
Journal of The Electrochemical Society (1985)
Growth and characterization of ultrathin nitrided silicon oxide films
E. P. Gusev;H.-C. Lu;E. L. Garfunkel;T. Gustafsson.
Ibm Journal of Research and Development (1999)
Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices
M. L. Ostraat;J. W. De Blauwe;M. L. Green;L. D. Bell.
Applied Physics Letters (2001)
Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials
Martin L. Green;Ichiro Takeuchi;Jason R. Hattrick-Simpers.
Journal of Applied Physics (2013)
Semiconductor heterostructure devices with strained semiconductor layers
Daniel Brasen;Eugene A. Fitzgerald;Martin L. Green;Donald P. Monroe.
The 2019 materials by design roadmap
Kirstin Alberi;Marco Buongiorno Nardelli;Andriy Zakutayev;Lubos Mitas.
Journal of Physics D (2019)
Fulfilling the promise of the materials genome initiative with high-throughput experimental methodologies
M. L. Green;C. L. Choi;J. R. Hattrick-Simpers;A. M. Joshi.
Applied physics reviews (2017)
The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length
J.M. Hergenrother;D. Monroe;F.P. Klemens;G.R. Weber.
international electron devices meeting (1999)
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