Martin L. Green

Research.com Recognitions

• 2011 - Fellow of the Materials Research Society

Overview

Best Publications

• Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

  M. L. Green;E. P. Gusev;R. Degraeve;Eric Garfunkel

  1142
  Citations

• Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates

  E. A. Fitzgerald;Y.‐H. Xie;M. L. Green;D. Brasen

  951
  Citations

• The 2019 materials by design roadmap

  Kirstin Alberi;Marco Buongiorno Nardelli;Andriy Zakutayev;Lubos Mitas

  344
  Citations

• Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films.

  M. L. Green;M. E. Gross;L. E. Papa;K. J. Schnoes

  321
  Citations

• Fulfilling the promise of the materials genome initiative with high-throughput experimental methodologies

  M. L. Green;C. L. Choi;J. R. Hattrick-Simpers;A. M. Joshi

  309
  Citations

• Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

  Martin L. Green;Ichiro Takeuchi;Jason R. Hattrick-Simpers

  290
  Citations

• Growth and characterization of ultrathin nitrided silicon oxide films

  E. P. Gusev;H.-C. Lu;E. L. Garfunkel;T. Gustafsson

  279
  Citations

• Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices

  M. L. Ostraat;J. W. De Blauwe;M. L. Green;L. D. Bell

  259
  Citations

• Semiconductor heterostructure devices with strained semiconductor layers

  Daniel Brasen;Eugene A. Fitzgerald;Martin L. Green;Donald P. Monroe

  234
  Citations

• The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

  J.M. Hergenrother;D. Monroe;F.P. Klemens;G.R. Weber

  204
  Citations

• Rapid thermal oxidation of silicon in N2O between 800 and 1200°C: Incorporated nitrogen and interfacial roughness

  M. L. Green;D. Brasen;K. W. Evans‐Lutterodt;L. C. Feldman

  199
  Citations

• A model for the FCC→HCP transformation, its applications, and experimental evidence

  S. Mahajan;M. L. Green;D. Brasen

  196
  Citations

• Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition

  M.-Y. Ho;H. Gong;G. D. Wilk;B. W. Busch

  193
  Citations

• Field effect devices and capacitors with improved thin film dielectrics and method for making same

  Daniel Brasen;Eric L. Garfunkel;Martin L. Green;Evgeni Petrovich Gusev

  191
  Citations

• Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process

  Martin L. Green;Glen D. Wilk

  181
  Citations

• Measurement, Standards, and Data Needs for CO2 Capture Materials: A Critical Review

  Laura Espinal;Dianne L. Poster;Winnie K. Wong-Ng;Andrew J. Allen

  179
  Citations

• Multi-component high-K gate dielectrics for the silicon industry

  L Manchanda;M.D Morris;M.L Green;R.B van Dover

  174
  Citations

• Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy

  J. P. Chang;J. P. Chang;M. L. Green;V. M. Donnelly;R. L. Opila

  162
  Citations

• Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon

  Martin M. Frank;Yves Jean Chabal;Martin L. Green;Annelies Delabie

  158
  Citations

• Ultraclean two-stage aerosol reactor for production of oxide-passivated silicon nanoparticles for novel memory devices

  Michele L. Ostraat;Jan W. De Blauwe;Martin L. Green;L. Douglas Bell

  154
  Citations