World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
53
Citations
10602
World Ranking
9199
National Ranking
2233

Martin L. Green publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Martin L. Green sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 208 publications — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Martin L. Green D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Martin L. Green sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 53 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2011 - Fellow of the Materials Research Society

Overview

Martin L. Green is affiliated with the National Institute of Standards and Technology in the United States. Their professional work is recognized within the field of materials science.

In 2011, Martin L. Green was awarded the designation of Fellow of the Materials Research Society, highlighting their association with this scientific community.

Best Publications

  • Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

    M. L. Green;E. P. Gusev;R. Degraeve;Eric Garfunkel

  • Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates

    E. A. Fitzgerald;Y.‐H. Xie;M. L. Green;D. Brasen

  • The 2019 materials by design roadmap

    Kirstin Alberi;Marco Buongiorno Nardelli;Andriy Zakutayev;Lubos Mitas

  • Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films.

    M. L. Green;M. E. Gross;L. E. Papa;K. J. Schnoes

  • Fulfilling the promise of the materials genome initiative with high-throughput experimental methodologies

    M. L. Green;C. L. Choi;J. R. Hattrick-Simpers;A. M. Joshi

  • Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

    Martin L. Green;Ichiro Takeuchi;Jason R. Hattrick-Simpers

  • Growth and characterization of ultrathin nitrided silicon oxide films

    E. P. Gusev;H.-C. Lu;E. L. Garfunkel;T. Gustafsson

  • Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices

    M. L. Ostraat;J. W. De Blauwe;M. L. Green;L. D. Bell

  • Semiconductor heterostructure devices with strained semiconductor layers

    Daniel Brasen;Eugene A. Fitzgerald;Martin L. Green;Donald P. Monroe

  • The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

    J.M. Hergenrother;D. Monroe;F.P. Klemens;G.R. Weber

  • Rapid thermal oxidation of silicon in N2O between 800 and 1200°C: Incorporated nitrogen and interfacial roughness

    M. L. Green;D. Brasen;K. W. Evans‐Lutterodt;L. C. Feldman

  • A model for the FCC→HCP transformation, its applications, and experimental evidence

    S. Mahajan;M. L. Green;D. Brasen

  • Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition

    M.-Y. Ho;H. Gong;G. D. Wilk;B. W. Busch

  • Field effect devices and capacitors with improved thin film dielectrics and method for making same

    Daniel Brasen;Eric L. Garfunkel;Martin L. Green;Evgeni Petrovich Gusev

  • Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process

    Martin L. Green;Glen D. Wilk

  • Measurement, Standards, and Data Needs for CO2 Capture Materials: A Critical Review

    Laura Espinal;Dianne L. Poster;Winnie K. Wong-Ng;Andrew J. Allen

  • Multi-component high-K gate dielectrics for the silicon industry

    L Manchanda;M.D Morris;M.L Green;R.B van Dover

  • Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy

    J. P. Chang;J. P. Chang;M. L. Green;V. M. Donnelly;R. L. Opila

  • Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon

    Martin M. Frank;Yves Jean Chabal;Martin L. Green;Annelies Delabie

  • Ultraclean two-stage aerosol reactor for production of oxide-passivated silicon nanoparticles for novel memory devices

    Michele L. Ostraat;Jan W. De Blauwe;Martin L. Green;L. Douglas Bell

Frequent Co-Authors

Leonard C. Feldman
Leonard C. Feldman Rutgers, The State University of New Jersey
Evgeni Gusev
Evgeni Gusev Qualcomm (United States)
Eric Garfunkel
Eric Garfunkel Rutgers, The State University of New Jersey
Ichiro Takeuchi
Ichiro Takeuchi University of Maryland, College Park
B. E. Weir
B. E. Weir Broadcom (United States)
Toyohiro Chikyow
Toyohiro Chikyow National Institute for Materials Science
Kenji Shiraishi
Kenji Shiraishi Nagoya University
R. B. van Dover
R. B. van Dover Cornell University
David A. Muller
David A. Muller Cornell University
Harry A. Atwater
Harry A. Atwater California Institute of Technology

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