World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
5343
World Ranking
5157
National Ranking
758

Hei Wong publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Hei Wong sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 334 publications — 64th percentile

64% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Hei Wong D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Hei Wong sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Hei Wong is affiliated with the City University of Hong Kong in China and has a research portfolio focused primarily on engineering, particularly within the fields of electrical and electronic engineering, materials chemistry, atomic and molecular physics, optics, biomedical engineering, and electronic, optical, and magnetic materials.

Their main research topics include semiconductor materials and devices, advancements in semiconductor devices and circuit design, advanced memory and neural computing, semiconductor materials and interfaces, nanowire synthesis and applications, electronic and structural properties of oxides, and copper interconnects and reliability.

Recent papers by Hei Wong include:

  • On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology Node, 2022, Nanomaterials
  • Contacts at the Nanoscale and for Nanomaterials, 2024, Nanomaterials
  • Effects of silicon surface defects on the graphene/silicon Schottky characteristics, 2021, Results in Physics
  • Characteristic Variabilities of Subnanometer EOT La2O3 Gate Dielectric Film of Nano CMOS Devices, 2021, Nanomaterials
  • Abridging CMOS Technology, 2022, Nanomaterials

The frequent coauthors collaborating with Hei Wong include Jieqiong Zhang, Shurong Dong, Kuniyuki Kakushima, Muhammad Abid Anwar, and Wenhan Bao.

Major publication venues where Hei Wong's work has appeared are:

  • Nanomaterials (9 publications)
  • ACS Applied Materials & Interfaces
  • Results in Physics
  • Journal of Circuits Systems and Computers
  • ACS Applied Energy Materials

The research contributions span multiple subfields, with particular emphasis on electrical and electronic engineering. This includes exploration of nanoscale transistors, semiconductor interfaces, and materials relevant to the development of advanced CMOS technologies.

Best Publications

  • On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

    Hei Wong;Hei Wong;Hiroshi Iwai

  • Low-frequency noise study in electron devices: review and update

    Hei Wong

  • Electronic structure and charge transport properties of amorphous Ta2O5 films

    V.A. Shvets;V.Sh. Aliev;D.V. Gritsenko;S.S. Shaimeev

  • Conduction mechanisms in MOS gate dielectric films

    Bing-Liang Yang;P. T. Lai;Hei Wong

  • Electronic structure of α-Al 2 O 3 : Ab initio simulations and comparison with experiment

    T. V. Perevalov;A. V. Shaposhnikov;V. A. Gritsenko;H. Wong

  • Defects in silicon oxynitride gate dielectric films

    Hei Wong;V.A. Gritsenko

  • Atomic and electronic structure of amorphous and crystalline hafnium oxide: X-ray photoelectron spectroscopy and density functional calculations

    T. V. Perevalov;V. A. Gritsenko;S. B. Erenburg;A. M. Badalyan

  • XPS Study of the Thermal Instability of HfO2 Prepared by Hf Sputtering in Oxygen with RTA

    Nian Zhan;M. C. Poon;C. W. Kok;K. L. Ng

  • The road to miniaturization

    Hei Wong;Hiroshi Iwai

  • Short-range order in non-stoichiometric amorphous silicon oxynitride and silicon-rich nitride

    V.A. Gritsenko;R.W.M. Kwok;Hei Wong;J.B. Xu

  • Gettering of gold and copper with implanted carbon in silicon

    H. Wong;N. W. Cheung;P. K. Chu

  • Recent developments in silicon optoelectronic devices

    Hei Wong

  • Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen

    Hei Wong;K. L. Ng;Nian Zhan;M. C. Poon

  • Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance

    V.A. Gritsenko;K.S. Zhuravlev;A.D. Milov;Hei Wong

  • X-ray photoelectron spectroscopy study of high-k CeO2/La2O3 stacked dielectrics

    Jieqiong Zhang;Hei Wong;Hei Wong;Danqun Yu;Kuniyuki Kakushima

  • Luminescence of intrinsic and extrinsic defects in hafnium oxide films

    A. A. Rastorguev;V. I. Belyi;T. P. Smirnova;L. V. Yakovkina

  • Material properties of interfacial silicate layer and its influence on the electrical characteristics of MOS devices using hafnia as the gate dielectric

    Hei Wong;B. Sen;V. Filip;M.C. Poon

  • Interface and oxide traps in high-κ hafnium oxide films

    H. Wong;N. Zhan;K.L. Ng;M.C. Poon

  • Nanometer CMOS

    Frank Schwierz;Hei Wong;Juin J. Liou

  • On the scaling of subnanometer EOT gate dielectrics for ultimate nano CMOS technology

    Hei Wong;Hiroshi Iwai

  • Preparation of Thin Dielectric Film for Nonvolatile Memory by Thermal Oxidation of Si-Rich LPCVD Nitride

    Hei Wong;M. C. Poon;Yong Gao;Ted C. W. Kok

  • Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing

    J. A. Ng;Y. Kuroki;N. Sugii;K. Kakushima

  • Trapping characteristics of lanthanum oxide gate dielectric film explored from temperature dependent current-voltage and capacitance-voltage measurements

    Banani Sen;Hei Wong;J. Molina;H. Iwai

  • Approximation of the length of velocity saturation region in MOSFET's

    H. Wong;M.C. Poon

Frequent Co-Authors

Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Shurong Dong
Shurong Dong Zhejiang University
Mansun Chan
Mansun Chan Hong Kong University of Science and Technology
Juin J. Liou
Juin J. Liou Shenzhen University
Paul K. Chu
Paul K. Chu City University of Hong Kong
Hao Jin
Hao Jin Hong Kong Polytechnic University
Jianbin Xu
Jianbin Xu Chinese University of Hong Kong
Yung-Chi Cheng
Yung-Chi Cheng Yale University
Yang Xu
Yang Xu Zhejiang University
Man Wong
Man Wong Hong Kong University of Science and Technology

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