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Juin J. Liou

Juin J. Liou

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
41
Citations
8782
World Ranking
4228
National Ranking
644

Overview

Juin J. Liou is affiliated with Shenzhen University in China. Their research primarily centers on engineering and materials science, focusing extensively on electrical and electronic engineering as well as condensed matter physics and materials chemistry. Their interdisciplinary approach spans several subfields, including electronic, optical and magnetic materials and biomedical engineering.

The scientist's research encompasses key topics related to semiconductor technology and device innovation. These include GaN-based semiconductor devices and materials, Ga2O3 and related materials, photocathodes and microchannel plates, advancements in semiconductor devices and circuit design, semiconductor materials and devices, electrostatic discharge in electronics, and integrated circuits and semiconductor failure analysis.

Their coauthorship network reflects frequent collaboration with researchers such as Fang Wang, Yuhuai Liu, Aoxiang Zhang, Zhongqiu Xing, and Yipu Qu. This collaborative dimension aligns with their publication history in several specialized venues.

Frequent publication venues include:

  • IEEE Transactions on Electron Devices
  • Optics Express
  • Optical Engineering
  • IEEE Electron Device Letters
  • Advanced Electronic Materials

Their notable recent papers are:

  • "Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility" (2022, Nano-Micro Letters)
  • "Self-assembling SiC nanoflakes/MXenes composites embedded in polymers towards efficient electromagnetic wave attenuation" (2021, Applied Surface Science)
  • "p-AlInN electron blocking layer for AlGaN-based deep-ultraviolet light-emitting diode" (2021, Superlattices and Microstructures)
  • "Defect engineering of two-dimensional materials towards next-generation electronics and optoelectronics" (2022, Nano Research)
  • "Augmented DTSCR With Fast Turn-On Speed for Nanoscale ESD Protection Applications" (2020, IEEE Transactions on Electron Devices)

Best Publications

  • A review of recent MOSFET threshold voltage extraction methods

    A. Ortiz-Conde;F.J. Garcı́a Sánchez;J.J. Liou;A. Cerdeira

  • Revisiting MOSFET threshold voltage extraction methods

    Adelmo Ortiz-Conde;Francisco J. García-Sánchez;Juan Muci;Alberto Terán Barrios

  • Modern Microwave Transistors: Theory, Design, and Performance

    Frank Schwierz;Juin J. Liou

  • Electrostatic discharge in semiconductor devices: an overview

    J.E. Vinson;J.J. Liou

  • An improved electrostatic discharge protection structure for reducing triggering voltage and parasitic capacitance

    Xiaofang Gao;Juin J. Liou;Waisum Wong;Satya Vishwanathan

  • A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs

    A. Ortiz-Conde;F.J. Garcia-Sanchez;J. Muci;S. Malobabic

  • Advanced semiconductor device physics and modeling

    Juin J. Liou

  • RF transistors: Recent developments and roadmap toward terahertz applications

    Frank Schwierz;Juin J. Liou

  • Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction

    Juin J. Liou;Adelmo Ortiz-Conde;F. Garcia-Sanchez

  • On-chip structure for electrostatic discharge (ESD) protection

    Javier A. Salcedo;Juin J. Liou;Joseph C. Bernier;Donald K. Whitney

  • Electrostatic discharge protection device for digital circuits and for applications with input/output bipolar voltage much higher than the core circuit power supply

    Javier A. Salcedo;Juin J. Liou;Joseph C. Bernier;Donald K. Whitney

  • On-Chip Spiral Inductors for RF Applications: An Overview

    Ji Chen;Juin J. Liou

  • Semiconductor devices for RF applications: evolution and current status

    F. Schwierz;Juin J. Liou

  • Novel Silicon-Controlled Rectifier (SCR) for High-Voltage Electrostatic Discharge (ESD) Applications

    Zhiwei Liu;J.J. Liou;J. Vinson

  • Comparison and optimization of the performance of Si and GaAs solar cells

    J.J. Liou;W.W. Wong

  • Direct extraction of semiconductor device parameters using lateral optimization method

    A Ortiz-Conde;Yuansheng Ma;J Thomson;E Santos

  • RF MOSFET: recent advances, current status and future trends

    Juin J Liou;Frank Schwierz

  • A Low-Power High-Speed Dynamic Comparator With a Transconductance-Enhanced Latching Stage

    Yao Wang;Mengmeng Yao;Benqing Guo;Zhaolei Wu

  • Forward-voltage capacitance and thickness of p-n junction space-charge regions

    J.J. Liou;F.A. Lindholm;J.S. Park

  • An Improved Bidirectional SCR Structure for Low-Triggering ESD Protection Applications

    Zhiwei Liu;J. Vinson;Lifang Lou;J.J. Liou

  • Semiconductor Device Physics and Simulation

    Juin J. Liou;J. S. Yuan

Frequent Co-Authors

Shurong Dong
Shurong Dong Zhejiang University
Hei Wong
Hei Wong City University of Hong Kong
Tsuyoshi Sekitani
Tsuyoshi Sekitani Osaka University
Takao Someya
Takao Someya University of Tokyo
Jun Yuan
Jun Yuan University of York
Kenjiro Fukuda
Kenjiro Fukuda Osaka University
Denis Flandre
Denis Flandre Université Catholique de Louvain
Navab Singh
Navab Singh Agency for Science, Technology and Research
Huili Grace Xing
Huili Grace Xing Cornell University
Tomoyuki Yokota
Tomoyuki Yokota University of Tokyo

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