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Juin J. Liou

Juin J. Liou

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 41 4228 4059 645 643 539 8782

Juin J. Liou publications per year

The chart shows the history of publications by Juin J. Liou between 1987 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Juin J. Liou published across 39 years, from 1987 to 2025, averaging 15 papers a year. Output peaked at 24 publications in 2010. 36 of the 586 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 1987 to 2025. Vertical axis: number of publications, 0 to 24. Peak 24 publications in 2010. 1987: 5 publications 1988: 14 publications 1989: 12 publications 1990: 17 publications 1991: 11 publications 1992: 16 publications 1993: 13 publications 1994: 20 publications 1995: 22 publications 1996: 23 publications 1997: 10 publications 1998: 18 publications 1999: 8 publications 2000: 19 publications 2001: 14 publications 2002: 10 publications 2003: 10 publications 2004: 11 publications 2005: 10 publications 2006: 13 publications 2007: 19 publications 2008: 13 publications 2009: 12 publications 2010: 24 publications 2011: 14 publications 2012: 11 publications 2013: 16 publications 2014: 20 publications 2015: 18 publications 2016: 15 publications 2017: 15 publications 2018: 12 publications 2019: 20 publications 2020: 11 publications 2021: 21 publications 2022: 14 publications 2023: 19 publications 2024: 12 publications 2025: 24 publications
1987 2025

586 publications in total across all disciplines

View publications per year as a table
Juin J. Liou: publications per year, 1987 to 2025
Year Publications
1987 5
1988 14
1989 12
1990 17
1991 11
1992 16
1993 13
1994 20
1995 22
1996 23
1997 10
1998 18
1999 8
2000 19
2001 14
2002 10
2003 10
2004 11
2005 10
2006 13
2007 19
2008 13
2009 12
2010 24
2011 14
2012 11
2013 16
2014 20
2015 18
2016 15
2017 15
2018 12
2019 20
2020 11
2021 21
2022 14
2023 19
2024 12
2025 24
Total 586
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Juin J. Liou publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Juin J. Liou sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 534–553 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 539 publications — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92 539
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Juin J. Liou D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Juin J. Liou sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 41 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 41 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187 41
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Juin J. Liou is affiliated with Shenzhen University in China. Their research primarily centers on engineering and materials science, focusing extensively on electrical and electronic engineering as well as condensed matter physics and materials chemistry. Their interdisciplinary approach spans several subfields, including electronic, optical and magnetic materials and biomedical engineering.

The scientist's research encompasses key topics related to semiconductor technology and device innovation. These include GaN-based semiconductor devices and materials, Ga2O3 and related materials, photocathodes and microchannel plates, advancements in semiconductor devices and circuit design, semiconductor materials and devices, electrostatic discharge in electronics, and integrated circuits and semiconductor failure analysis.

Their coauthorship network reflects frequent collaboration with researchers such as Fang Wang, Yuhuai Liu, Aoxiang Zhang, Zhongqiu Xing, and Yipu Qu. This collaborative dimension aligns with their publication history in several specialized venues.

Frequent publication venues include:

  • IEEE Transactions on Electron Devices
  • Optics Express
  • Optical Engineering
  • IEEE Electron Device Letters
  • Advanced Electronic Materials

Their notable recent papers are:

  • "Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility" (2022, Nano-Micro Letters)
  • "Self-assembling SiC nanoflakes/MXenes composites embedded in polymers towards efficient electromagnetic wave attenuation" (2021, Applied Surface Science)
  • "p-AlInN electron blocking layer for AlGaN-based deep-ultraviolet light-emitting diode" (2021, Superlattices and Microstructures)
  • "Defect engineering of two-dimensional materials towards next-generation electronics and optoelectronics" (2022, Nano Research)
  • "Augmented DTSCR With Fast Turn-On Speed for Nanoscale ESD Protection Applications" (2020, IEEE Transactions on Electron Devices)

Best Publications

  • A review of recent MOSFET threshold voltage extraction methods

    A. Ortiz-Conde;F.J. Garcı́a Sánchez;J.J. Liou;A. Cerdeira

  • Revisiting MOSFET threshold voltage extraction methods

    Adelmo Ortiz-Conde;Francisco J. García-Sánchez;Juan Muci;Alberto Terán Barrios

  • Modern Microwave Transistors: Theory, Design, and Performance

    Frank Schwierz;Juin J. Liou

  • Electrostatic discharge in semiconductor devices: an overview

    J.E. Vinson;J.J. Liou

  • An improved electrostatic discharge protection structure for reducing triggering voltage and parasitic capacitance

    Xiaofang Gao;Juin J. Liou;Waisum Wong;Satya Vishwanathan

  • A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs

    A. Ortiz-Conde;F.J. Garcia-Sanchez;J. Muci;S. Malobabic

  • Advanced semiconductor device physics and modeling

    Juin J. Liou

  • RF transistors: Recent developments and roadmap toward terahertz applications

    Frank Schwierz;Juin J. Liou

  • Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction

    Juin J. Liou;Adelmo Ortiz-Conde;F. Garcia-Sanchez

  • On-chip structure for electrostatic discharge (ESD) protection

    Javier A. Salcedo;Juin J. Liou;Joseph C. Bernier;Donald K. Whitney

  • Electrostatic discharge protection device for digital circuits and for applications with input/output bipolar voltage much higher than the core circuit power supply

    Javier A. Salcedo;Juin J. Liou;Joseph C. Bernier;Donald K. Whitney

  • On-Chip Spiral Inductors for RF Applications: An Overview

    Ji Chen;Juin J. Liou

  • Semiconductor devices for RF applications: evolution and current status

    F. Schwierz;Juin J. Liou

  • Novel Silicon-Controlled Rectifier (SCR) for High-Voltage Electrostatic Discharge (ESD) Applications

    Zhiwei Liu;J.J. Liou;J. Vinson

  • Comparison and optimization of the performance of Si and GaAs solar cells

    J.J. Liou;W.W. Wong

  • Direct extraction of semiconductor device parameters using lateral optimization method

    A Ortiz-Conde;Yuansheng Ma;J Thomson;E Santos

  • RF MOSFET: recent advances, current status and future trends

    Juin J Liou;Frank Schwierz

  • A Low-Power High-Speed Dynamic Comparator With a Transconductance-Enhanced Latching Stage

    Yao Wang;Mengmeng Yao;Benqing Guo;Zhaolei Wu

  • Forward-voltage capacitance and thickness of p-n junction space-charge regions

    J.J. Liou;F.A. Lindholm;J.S. Park

  • An Improved Bidirectional SCR Structure for Low-Triggering ESD Protection Applications

    Zhiwei Liu;J. Vinson;Lifang Lou;J.J. Liou

  • Semiconductor Device Physics and Simulation

    Juin J. Liou;J. S. Yuan

Frequent Co-Authors

Shurong Dong
Shurong Dong Zhejiang University
Hei Wong
Hei Wong City University of Hong Kong
Frank Schwierz
Frank Schwierz Ilmenau University of Technology
Hao Jin
Hao Jin Hong Kong Polytechnic University
Tsuyoshi Sekitani
Tsuyoshi Sekitani Osaka University
Takao Someya
Takao Someya University of Tokyo
Kenjiro Fukuda
Kenjiro Fukuda Osaka University
Denis Flandre
Denis Flandre Université Catholique de Louvain
Jun Yuan
Jun Yuan University of York
Tomoyuki Yokota
Tomoyuki Yokota University of Tokyo

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