2026 Frank Schwierz: Engineering and Technology Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Engineering and Technology	35	8854	8535	297	286	197	11414

Overview

Frank Schwierz is affiliated with the Ilmenau University of Technology in Germany, with a research focus primarily in the fields of Engineering and Materials Science. Their work spans several subfields including Electrical and Electronic Engineering, Materials Chemistry, Cellular and Molecular Neuroscience, Atomic and Molecular Physics and Optics, and Polymers and Plastics.

The scientist's research covers a range of topics, emphasizing 2D Materials and Applications, Advanced Memory and Neural Computing, Graphene research and applications, Ferroelectric and Negative Capacitance Devices, MXene and MAX Phase Materials, Photoreceptor and optogenetics research, and semiconductor materials and devices.

Recent publications authored by Frank Schwierz include:

"Six Decades of Research on 2D Materials: Progress, Dead Ends, and New Horizons," 2022, IEEE Journal of the Electron Devices Society
"Insulators for 2D nanoelectronics: the gap to bridge," 2020, Nature Communications
"Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation," 2022, Nature Electronics
"The Role of Vacancy Dynamics in Two-Dimensional Memristive Devices," 2023, Advanced Electronic Materials
"Gigahertz and terahertz transistors for 5G, 6G, and beyond mobile communication systems," 2024, Applied Physics Reviews

The frequent publication venues for their work include:

Nature Electronics
Advanced Electronic Materials
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
Nature Communications
Applied Physics Reviews

Collaborative efforts have been a notable part of Frank Schwierz's academic profile, with several frequent co-authors contributing to their research. These include Martin Ziegler, Benjamin Spetzler, Dilara Abdel, Patricio Farrell, and Juin J. Liou.

Best Publications

Graphene transistors.

Unknown

3719
Citations
Two-dimensional materials and their prospects in transistor electronics

Frank Pd Dr.-Ing. habil. Schwierz;Jörg rer. nat. Pezoldt;Ralf Dr.-Ing. Granzner

785
Citations
Graphene Transistors: Status, Prospects, and Problems

F. Schwierz

637
Citations
Insulators for 2D nanoelectronics: the gap to bridge.

Yury Yu. Illarionov;Theresia Knobloch;Markus Jech;Mario Lanza

484
Citations
Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]

M. Roschke;F. Schwierz

434
Citations
Low-field electron mobility in wurtzite InN

V. M. Polyakov;F. Schwierz

283
Citations
Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels

S. A. Thiele;J. A. Schaefer;F. Schwierz

274
Citations
Modern Microwave Transistors: Theory, Design, and Performance

Frank Schwierz;Juin J. Liou

255
Citations
An electron mobility model for wurtzite GaN

Frank Schwierz

187
Citations
RF transistors: Recent developments and roadmap toward terahertz applications

Frank Schwierz;Juin J. Liou

154
Citations
Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results

R. Granzner;V. M. Polyakov;F. Schwierz;M. Kittler

147
Citations
Electronics: Industry-compatible graphene transistors

Frank Schwierz

141
Citations
Two-dimensional materials for electronic applications

Max C. Lemme;Lain-Jong Li;Tomás Palacios;Frank Schwierz

136
Citations
Nanoelectronics: Flat transistors get off the ground.

Frank Schwierz

99
Citations
Semiconductor devices for RF applications: evolution and current status

F. Schwierz;Juin J. Liou

98
Citations
Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation

Stephan Maroldt;Christian Haupt;Wilfried Pletschen;Stefan Müller

93
Citations
RF MOSFET: recent advances, current status and future trends

Juin J Liou;Frank Schwierz

86
Citations
On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs

Ralf Granzner;V.M Polyakov;F Schwierz;M Kittler

83
Citations
Formation of two-dimensional electron gases in polytypic SiC heterostructures

V. M. Polyakov;F. Schwierz

83
Citations
Subthreshold behavior of triple-gate MOSFETs on SOI material

Max C. Lemme;T. Mollenhauer;W. Henschel;T. Wahlbrink

71
Citations
Modeling of the steady state characteristics of large-area graphene field-effect transistors

S. Thiele;F. Schwierz

67
Citations

Frequent Co-Authors

Oliver Ambacher University of Freiburg

Juin J. Liou Shenzhen University

Max C. Lemme RWTH Aachen University

Heinrich Kurz RWTH Aachen University

Gianluca Fiori University of Pisa

Gengchiau Liang National Yang Ming Chiao Tung University

David Esseni University of Udine

Stefan Müller Otto-von-Guericke University Magdeburg

William J. Schaff Cornell University

Deji Akinwande The University of Texas at Austin

External Links

Personal website of Frank Schwierz

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