World's Best Scientists 2026 revealed!
Michel Houssa

Michel Houssa

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 60 6982 6746 74 72 424 14595

Michel Houssa publications per year

The chart shows the history of publications by Michel Houssa between 1993 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Michel Houssa published across 33 years, from 1993 to 2025, averaging 13.8 papers a year. Output peaked at 27 publications in 2007. 14 of the 454 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1993 to 2025. Vertical axis: number of publications, 0 to 27. Peak 27 publications in 2007. 1993: 1 publication 1994: 4 publications 1995: 2 publications 1996: 12 publications 1997: 9 publications 1998: 9 publications 1999: 21 publications 2000: 11 publications 2001: 16 publications 2002: 12 publications 2003: 12 publications 2004: 19 publications 2005: 19 publications 2006: 25 publications 2007: 27 publications 2008: 16 publications 2009: 24 publications 2010: 9 publications 2011: 17 publications 2012: 14 publications 2013: 18 publications 2014: 20 publications 2015: 14 publications 2016: 23 publications 2017: 14 publications 2018: 9 publications 2019: 11 publications 2020: 14 publications 2021: 16 publications 2022: 8 publications 2023: 14 publications 2024: 11 publications 2025: 3 publications
1993 2025

454 publications in total across all disciplines

View publications per year as a table
Michel Houssa: publications per year, 1993 to 2025
Year Publications
1993 1
1994 4
1995 2
1996 12
1997 9
1998 9
1999 21
2000 11
2001 16
2002 12
2003 12
2004 19
2005 19
2006 25
2007 27
2008 16
2009 24
2010 9
2011 17
2012 14
2013 18
2014 20
2015 14
2016 23
2017 14
2018 9
2019 11
2020 14
2021 16
2022 8
2023 14
2024 11
2025 3
Total 454
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Michel Houssa publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Michel Houssa sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 410–429 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 424 publications — 80th percentile

80% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256 424
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Michel Houssa D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Michel Houssa sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 60–61 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 60 D-Index — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587 60
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Research.com Recognitions

  • 2020 - Fellow of American Physical Society (APS) Citation For contributions to the understanding and reliability of ultrathin gate dielectrics and interfaces for nanoscale devices
  • 2018 - IEEE Fellow For contributions to materials characterization for advanced MOSFETs

Overview

Michel Houssa is affiliated with KU Leuven in Belgium and has contributed extensively to the fields of materials science, engineering, and physics and astronomy. Their research spans several subfields, including materials chemistry, electrical and electronic engineering, atomic and molecular physics and optics, as well as electronic, optical, and magnetic materials.

The primary focus of their work lies in materials science, with a strong emphasis on 2D materials and applications. Key research topics also include graphene research and applications, topological materials and phenomena, electronic and structural properties of oxides, MXene and MAX phase materials, quantum and electron transport phenomena, and advancements in semiconductor devices and circuit design.

Michel Houssa has published in a variety of venues, with frequent publications appearing in:

  • arXiv (Cornell University)
  • ACS Applied Materials & Interfaces
  • Physical Review Materials
  • Journal of Physics Materials
  • Research Square (Research Square)

Notable recent papers include:

  • Advanced DFT-NEGF Transport Techniques for Novel 2-D Material and Device Exploration Including HfS2/WSe2 van der Waals Heterojunction TFET and WTe2/WS2 Metal/Semiconductor Contact (2021, IEEE Transactions on Electron Devices)
  • Hole-doping induced ferromagnetism in 2D materials (2022, npj Computational Materials)
  • On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides (2020, ACS Applied Materials & Interfaces)
  • Two-dimensional honeycomb-kagome V2O3: a robust room-temperature magnetic Chern insulator interfaced with graphene (2021, arXiv (Cornell University))
  • Graphene based Van der Waals contacts on MoS 2 field effect transistors (2020, 2D Materials)

Frequent collaborators include Ruishen Meng, Jean-Pierre Locquet, Aryan Afzalian, Jin Won Seo, and Geoffrey Pourtois, reflecting a diverse range of coauthorship across multiple publications.

Michel Houssa has been recognized with honors such as the Fellow of American Physical Society (APS) in 2020, noted for contributions to the understanding and reliability of ultrathin gate dielectrics and interfaces for nanoscale devices. Additionally, they were named an IEEE Fellow in 2018 for contributions to materials characterization for advanced MOSFETs.

Best Publications

  • Buckled two-dimensional Xene sheets

    Alessandro Molle;Joshua Goldberger;Michel Houssa;Yong Xu

  • Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

    Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;Valery Afanas’ev

  • Electronic properties of hydrogenated silicene and germanene

    Michel Houssa;Emilio Scalise;Kiroubanand Sankaran;Geoffrey Pourtois

  • Trap-assisted tunneling in high permittivity gate dielectric stacks

    Michel Houssa;M Tuominen;M Naili;Valeri Afanas'ev

  • High k Gate Dielectrics

    Michel Houssa

  • Two-dimensional Si nanosheets with local hexagonal structure on a MoS(2) surface.

    Daniele Chiappe;Emilio Scalise;Eugenio Cinquanta;Carlo Grazianetti;Carlo Grazianetti

  • Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

    D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard

  • Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

    M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve

  • Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

    Annelies Delabie;Florence Bellenger;Michel Houssa;Thierry Conard

  • Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2

    Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns

  • Can silicon behave like graphene? A first-principles study

    Michel Houssa;Geoffrey Pourtois;Valeri Afanas'ev;Andre Stesmans

  • Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

    Michel Houssa;Valeri Afanas'ev;Andre Stesmans;MM Heyns

  • Silicene: a review of recent experimental and theoretical investigations

    Michel Houssa;A Dimoulas;A Molle

  • Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks

    Zhen Xu;Michel Houssa;Stefan De Gendt;Marc Heyns

  • Vibrational properties of silicene and germanene

    Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;B. van den Broek

  • HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition

    A Dimoulas;G Mavrou;G Vellianitis;E Evangelou

  • Getting through the Nature of Silicene: An sp2–sp3 Two-Dimensional Silicon Nanosheet

    Eugenio Cinquanta;Emilio Scalise;Daniele Chiappe;Carlo Grazianetti;Carlo Grazianetti

  • Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators

    Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns

  • Getting through the nature of silicene: sp2-sp3 two-dimensional silicon nanosheet

    E. Cinquanta;E. Scalise;D. Chiappe;C. Grazianetti

  • Passivation of Ge ( 100 ) ∕ GeO2 ∕ high-κ Gate Stacks Using Thermal Oxide Treatments

    F. Bellenger;M. Houssa;A. Delabie;V. Afanasiev

  • Modeling Soft Breakdown of Ultra-Thin Gate Oxide Layers

    Michel Houssa;Paul Mertens;Marc Heyns

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