The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Michel Houssa sits on this spectrum.
This scientist: 424 publications — 80th percentile
80% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Michel Houssa sits on this spectrum.
This scientist: 60 D-Index — 46th percentile
46% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Michel Houssa is affiliated with KU Leuven in Belgium and has contributed extensively to the fields of materials science, engineering, and physics and astronomy. Their research spans several subfields, including materials chemistry, electrical and electronic engineering, atomic and molecular physics and optics, as well as electronic, optical, and magnetic materials.
The primary focus of their work lies in materials science, with a strong emphasis on 2D materials and applications. Key research topics also include graphene research and applications, topological materials and phenomena, electronic and structural properties of oxides, MXene and MAX phase materials, quantum and electron transport phenomena, and advancements in semiconductor devices and circuit design.
Michel Houssa has published in a variety of venues, with frequent publications appearing in:
Notable recent papers include:
Frequent collaborators include Ruishen Meng, Jean-Pierre Locquet, Aryan Afzalian, Jin Won Seo, and Geoffrey Pourtois, reflecting a diverse range of coauthorship across multiple publications.
Michel Houssa has been recognized with honors such as the Fellow of American Physical Society (APS) in 2020, noted for contributions to the understanding and reliability of ultrathin gate dielectrics and interfaces for nanoscale devices. Additionally, they were named an IEEE Fellow in 2018 for contributions to materials characterization for advanced MOSFETs.
Alessandro Molle;Joshua Goldberger;Michel Houssa;Yong Xu
Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;Valery Afanas’ev
Michel Houssa;Emilio Scalise;Kiroubanand Sankaran;Geoffrey Pourtois
Michel Houssa;M Tuominen;M Naili;Valeri Afanas'ev
Michel Houssa
Daniele Chiappe;Emilio Scalise;Eugenio Cinquanta;Carlo Grazianetti;Carlo Grazianetti
D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard
M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve
Annelies Delabie;Florence Bellenger;Michel Houssa;Thierry Conard
Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns
Michel Houssa;Geoffrey Pourtois;Valeri Afanas'ev;Andre Stesmans
Michel Houssa;Valeri Afanas'ev;Andre Stesmans;MM Heyns
Michel Houssa;A Dimoulas;A Molle
Zhen Xu;Michel Houssa;Stefan De Gendt;Marc Heyns
Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;B. van den Broek
A Dimoulas;G Mavrou;G Vellianitis;E Evangelou
Eugenio Cinquanta;Emilio Scalise;Daniele Chiappe;Carlo Grazianetti;Carlo Grazianetti
Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns
E. Cinquanta;E. Scalise;D. Chiappe;C. Grazianetti
F. Bellenger;M. Houssa;A. Delabie;V. Afanasiev
Michel Houssa;Paul Mertens;Marc Heyns
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