2020 - Fellow of American Physical Society (APS) Citation For contributions to the understanding and reliability of ultrathin gate dielectrics and interfaces for nanoscale devices
2018 - IEEE Fellow For contributions to materials characterization for advanced MOSFETs
His main research concerns Condensed matter physics, Optoelectronics, Gate dielectric, Dielectric and Germanium. His Condensed matter physics study incorporates themes from Density functional theory, Graphene, Silicene and Capacitor. His studies in Optoelectronics integrate themes in fields like Layer, Atomic layer deposition, Analytical chemistry and Oxide.
His Gate dielectric research incorporates elements of Gate oxide, Annealing, MOSFET, Quantum tunnelling and Gate stack. His Dielectric research includes elements of Metalorganic vapour phase epitaxy and Vacuum deposition. Michel Houssa focuses mostly in the field of Germanium, narrowing it down to matters related to Passivation and, in some cases, Hysteresis.
His scientific interests lie mostly in Condensed matter physics, Optoelectronics, Dielectric, Analytical chemistry and Gate dielectric. His Condensed matter physics research integrates issues from Thermal conductivity, Electron and Density functional theory. His Density functional theory research focuses on subjects like Graphene, which are linked to Electronic structure.
Michel Houssa has included themes like Passivation and MOSFET in his Optoelectronics study. His study in Analytical chemistry is interdisciplinary in nature, drawing from both Hydrogen, Oxide, Annealing and Metal. He studied Gate dielectric and Capacitor that intersect with Stress.
The scientist’s investigation covers issues in Condensed matter physics, Density functional theory, Semiconductor, Graphene and Monolayer. His research in Condensed matter physics intersects with topics in Silicene and Contact resistance. His research investigates the link between Density functional theory and topics such as Stacking that cross with problems in Epitaxy and Molecular beam epitaxy.
His Semiconductor research is multidisciplinary, incorporating perspectives in Electron and Aluminium. The study incorporates disciplines such as Electronic structure and Electric field in addition to Graphene. His Nanotechnology study combines topics from a wide range of disciplines, such as Crystallographic defect, Optoelectronics and Electronic properties.
His primary areas of study are Condensed matter physics, Density functional theory, Graphene, Nanotechnology and Electronic structure. His research in Condensed matter physics is mostly focused on Doping. His work carried out in the field of Graphene brings together such families of science as Heterojunction, Electric field and Semiconductor.
When carried out as part of a general Nanotechnology research project, his work on Nanoelectronics, Gate dielectric and Equivalent oxide thickness is frequently linked to work in Formalism, therefore connecting diverse disciplines of study. The various areas that Michel Houssa examines in his Electronic structure study include Stanene and Silicene. His Topological insulator study integrates concerns from other disciplines, such as Optoelectronics and Spintronics.
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Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2
Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;Valery Afanas’ev.
Nano Research (2012)
Buckled two-dimensional Xene sheets
Alessandro Molle;Joshua Goldberger;Michel Houssa;Yong Xu.
Nature Materials (2017)
Electronic properties of hydrogenated silicene and germanene
Michel Houssa;Emilio Scalise;Kiroubanand Sankaran;Geoffrey Pourtois.
Applied Physics Letters (2011)
Trap-assisted tunneling in high permittivity gate dielectric stacks
Michel Houssa;M Tuominen;M Naili;Valeri Afanas'ev.
Journal of Applied Physics (2000)
High k Gate Dielectrics
Two-dimensional Si nanosheets with local hexagonal structure on a MoS(2) surface.
Daniele Chiappe;Emilio Scalise;Eugenio Cinquanta;Carlo Grazianetti;Carlo Grazianetti.
Advanced Materials (2014)
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard.
Journal of The Electrochemical Society (2008)
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve.
Materials Science & Engineering R-reports (2006)
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
Annelies Delabie;Florence Bellenger;Michel Houssa;Thierry Conard.
Applied Physics Letters (2007)
Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2
Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns.
Journal of Applied Physics (2002)
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