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Michel Houssa

Michel Houssa

D-Index & Metrics

Materials Science

D-Index
60
Citations
14595
World Ranking
6984
National Ranking
74

Research.com Recognitions

  • 2020 - Fellow of American Physical Society (APS) Citation For contributions to the understanding and reliability of ultrathin gate dielectrics and interfaces for nanoscale devices
  • 2018 - IEEE Fellow For contributions to materials characterization for advanced MOSFETs

Overview

Michel Houssa is affiliated with KU Leuven in Belgium and has contributed extensively to the fields of materials science, engineering, and physics and astronomy. Their research spans several subfields, including materials chemistry, electrical and electronic engineering, atomic and molecular physics and optics, as well as electronic, optical, and magnetic materials.

The primary focus of their work lies in materials science, with a strong emphasis on 2D materials and applications. Key research topics also include graphene research and applications, topological materials and phenomena, electronic and structural properties of oxides, MXene and MAX phase materials, quantum and electron transport phenomena, and advancements in semiconductor devices and circuit design.

Michel Houssa has published in a variety of venues, with frequent publications appearing in:

  • arXiv (Cornell University)
  • ACS Applied Materials & Interfaces
  • Physical Review Materials
  • Journal of Physics Materials
  • Research Square (Research Square)

Notable recent papers include:

  • Advanced DFT-NEGF Transport Techniques for Novel 2-D Material and Device Exploration Including HfS2/WSe2 van der Waals Heterojunction TFET and WTe2/WS2 Metal/Semiconductor Contact (2021, IEEE Transactions on Electron Devices)
  • Hole-doping induced ferromagnetism in 2D materials (2022, npj Computational Materials)
  • On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides (2020, ACS Applied Materials & Interfaces)
  • Two-dimensional honeycomb-kagome V2O3: a robust room-temperature magnetic Chern insulator interfaced with graphene (2021, arXiv (Cornell University))
  • Graphene based Van der Waals contacts on MoS 2 field effect transistors (2020, 2D Materials)

Frequent collaborators include Ruishen Meng, Jean-Pierre Locquet, Aryan Afzalian, Jin Won Seo, and Geoffrey Pourtois, reflecting a diverse range of coauthorship across multiple publications.

Michel Houssa has been recognized with honors such as the Fellow of American Physical Society (APS) in 2020, noted for contributions to the understanding and reliability of ultrathin gate dielectrics and interfaces for nanoscale devices. Additionally, they were named an IEEE Fellow in 2018 for contributions to materials characterization for advanced MOSFETs.

Best Publications

  • Buckled two-dimensional Xene sheets

    Alessandro Molle;Joshua Goldberger;Michel Houssa;Yong Xu

  • Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

    Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;Valery Afanas’ev

  • Electronic properties of hydrogenated silicene and germanene

    Michel Houssa;Emilio Scalise;Kiroubanand Sankaran;Geoffrey Pourtois

  • Trap-assisted tunneling in high permittivity gate dielectric stacks

    Michel Houssa;M Tuominen;M Naili;Valeri Afanas'ev

  • High k Gate Dielectrics

    Michel Houssa

  • Two-dimensional Si nanosheets with local hexagonal structure on a MoS(2) surface.

    Daniele Chiappe;Emilio Scalise;Eugenio Cinquanta;Carlo Grazianetti;Carlo Grazianetti

  • Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

    D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard

  • Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

    M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve

  • Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

    Annelies Delabie;Florence Bellenger;Michel Houssa;Thierry Conard

  • Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2

    Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns

  • Can silicon behave like graphene? A first-principles study

    Michel Houssa;Geoffrey Pourtois;Valeri Afanas'ev;Andre Stesmans

  • Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

    Michel Houssa;Valeri Afanas'ev;Andre Stesmans;MM Heyns

  • Silicene: a review of recent experimental and theoretical investigations

    Michel Houssa;A Dimoulas;A Molle

  • Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks

    Zhen Xu;Michel Houssa;Stefan De Gendt;Marc Heyns

  • Vibrational properties of silicene and germanene

    Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;B. van den Broek

  • HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition

    A Dimoulas;G Mavrou;G Vellianitis;E Evangelou

  • Getting through the Nature of Silicene: An sp2–sp3 Two-Dimensional Silicon Nanosheet

    Eugenio Cinquanta;Emilio Scalise;Daniele Chiappe;Carlo Grazianetti;Carlo Grazianetti

  • Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators

    Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns

  • Getting through the nature of silicene: sp2-sp3 two-dimensional silicon nanosheet

    E. Cinquanta;E. Scalise;D. Chiappe;C. Grazianetti

  • Passivation of Ge ( 100 ) ∕ GeO2 ∕ high-κ Gate Stacks Using Thermal Oxide Treatments

    F. Bellenger;M. Houssa;A. Delabie;V. Afanasiev

  • Modeling Soft Breakdown of Ultra-Thin Gate Oxide Layers

    Michel Houssa;Paul Mertens;Marc Heyns

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