D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 55 Citations 11,765 367 World Ranking 5630 National Ranking 58

Research.com Recognitions

Awards & Achievements

2020 - Fellow of American Physical Society (APS) Citation For contributions to the understanding and reliability of ultrathin gate dielectrics and interfaces for nanoscale devices

2018 - IEEE Fellow For contributions to materials characterization for advanced MOSFETs

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

His main research concerns Condensed matter physics, Optoelectronics, Gate dielectric, Dielectric and Germanium. His Condensed matter physics study incorporates themes from Density functional theory, Graphene, Silicene and Capacitor. His studies in Optoelectronics integrate themes in fields like Layer, Atomic layer deposition, Analytical chemistry and Oxide.

His Gate dielectric research incorporates elements of Gate oxide, Annealing, MOSFET, Quantum tunnelling and Gate stack. His Dielectric research includes elements of Metalorganic vapour phase epitaxy and Vacuum deposition. Michel Houssa focuses mostly in the field of Germanium, narrowing it down to matters related to Passivation and, in some cases, Hysteresis.

His most cited work include:

  • Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 (449 citations)
  • Buckled two-dimensional Xene sheets (359 citations)
  • Electronic properties of hydrogenated silicene and germanene (329 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Condensed matter physics, Optoelectronics, Dielectric, Analytical chemistry and Gate dielectric. His Condensed matter physics research integrates issues from Thermal conductivity, Electron and Density functional theory. His Density functional theory research focuses on subjects like Graphene, which are linked to Electronic structure.

Michel Houssa has included themes like Passivation and MOSFET in his Optoelectronics study. His study in Analytical chemistry is interdisciplinary in nature, drawing from both Hydrogen, Oxide, Annealing and Metal. He studied Gate dielectric and Capacitor that intersect with Stress.

He most often published in these fields:

  • Condensed matter physics (38.77%)
  • Optoelectronics (28.34%)
  • Dielectric (16.31%)

What were the highlights of his more recent work (between 2015-2021)?

  • Condensed matter physics (38.77%)
  • Density functional theory (8.56%)
  • Semiconductor (9.09%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Condensed matter physics, Density functional theory, Semiconductor, Graphene and Monolayer. His research in Condensed matter physics intersects with topics in Silicene and Contact resistance. His research investigates the link between Density functional theory and topics such as Stacking that cross with problems in Epitaxy and Molecular beam epitaxy.

His Semiconductor research is multidisciplinary, incorporating perspectives in Electron and Aluminium. The study incorporates disciplines such as Electronic structure and Electric field in addition to Graphene. His Nanotechnology study combines topics from a wide range of disciplines, such as Crystallographic defect, Optoelectronics and Electronic properties.

Between 2015 and 2021, his most popular works were:

  • Buckled two-dimensional Xene sheets (359 citations)
  • 2D Materials for Nanoelectronics (35 citations)
  • Intrinsic point defects in buckled and puckered arsenene: a first-principles study (28 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

His primary areas of study are Condensed matter physics, Density functional theory, Graphene, Nanotechnology and Electronic structure. His research in Condensed matter physics is mostly focused on Doping. His work carried out in the field of Graphene brings together such families of science as Heterojunction, Electric field and Semiconductor.

When carried out as part of a general Nanotechnology research project, his work on Nanoelectronics, Gate dielectric and Equivalent oxide thickness is frequently linked to work in Formalism, therefore connecting diverse disciplines of study. The various areas that Michel Houssa examines in his Electronic structure study include Stanene and Silicene. His Topological insulator study integrates concerns from other disciplines, such as Optoelectronics and Spintronics.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;Valery Afanas’ev.
Nano Research (2012)

646 Citations

Buckled two-dimensional Xene sheets

Alessandro Molle;Joshua Goldberger;Michel Houssa;Yong Xu.
Nature Materials (2017)

586 Citations

Electronic properties of hydrogenated silicene and germanene

Michel Houssa;Emilio Scalise;Kiroubanand Sankaran;Geoffrey Pourtois.
Applied Physics Letters (2011)

428 Citations

Trap-assisted tunneling in high permittivity gate dielectric stacks

Michel Houssa;M Tuominen;M Naili;Valeri Afanas'ev.
Journal of Applied Physics (2000)

427 Citations

High k Gate Dielectrics

Michel Houssa.
(2003)

392 Citations

Two-dimensional Si nanosheets with local hexagonal structure on a MoS(2) surface.

Daniele Chiappe;Emilio Scalise;Eugenio Cinquanta;Carlo Grazianetti;Carlo Grazianetti.
Advanced Materials (2014)

332 Citations

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard.
Journal of The Electrochemical Society (2008)

314 Citations

Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve.
Materials Science & Engineering R-reports (2006)

310 Citations

Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

Annelies Delabie;Florence Bellenger;Michel Houssa;Thierry Conard.
Applied Physics Letters (2007)

285 Citations

Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2

Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns.
Journal of Applied Physics (2002)

265 Citations

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