2026 Valeri Afanas'ev: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	67	5063	4900	51	49	548	17981

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

5063

4900

548

17981

Overview

Valeri Afanas'ev is a researcher affiliated with KU Leuven in Belgium, specializing in fields that bridge engineering and materials science. Their work significantly focuses on electrical and electronic engineering as well as materials chemistry, with additional contributions in atomic and molecular physics, optics, nuclear and high energy physics, and the mechanics of materials.

The scientific topics in their research include ferroelectric and negative capacitance devices, graphene research and applications, 2D materials and their applications, semiconductor materials and devices, topological materials and phenomena, ferroelectric and piezoelectric materials, and advanced condensed matter physics.

Valeri Afanas'ev has contributed to numerous scholarly publications, with some of the frequent venues for their research including arXiv (Cornell University), Journal of Applied Physics, IEEE Electron Device Letters, Mining Journal of Kryvyi Rih National University, and npj 2D Materials and Applications.

Selected recent papers authored or co-authored by Afanas'ev include:

Search for sterile neutrinos with the Neutrino-4 experiment and measurement results, 2021, Physical review. D/Physical review. D.
Two-dimensional honeycomb-kagome V2O3: a robust room-temperature magnetic Chern insulator interfaced with graphene, 2021, arXiv (Cornell University)
Ferromagnetism and half-metallicity in two-dimensional M O (M=Ga, In) monolayers induced by hole doping, 2020, Physical Review Materials
Two-dimensional gallium and indium oxides from global structure searching: Ferromagnetism and half metallicity via hole doping, 2020, Journal of Applied Physics
Quarter-filled Kane-Mele Hubbard model: Dirac half metals, 2021, Physical review. B./Physical review. B

Collaborations form a distinctive part of Afanas'ev's scientific output. Frequent co-authors include Michel Houssa, Ruishen Meng, Jean-Pierre Locquet, Gouri Sankar Kar, and Jan Van Houdt.

Best Publications

Intrinsic SiC/SiO2 Interface States

Valeri Afanas'ev;M. Bassler;G. Pensl;M. J. Schulz

880
Citations
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;Valery Afanas’ev

750
Citations
Electronic properties of hydrogenated silicene and germanene

Michel Houssa;Emilio Scalise;Kiroubanand Sankaran;Geoffrey Pourtois

505
Citations
Trap-assisted tunneling in high permittivity gate dielectric stacks

Michel Houssa;M Tuominen;M Naili;Valeri Afanas'ev

451
Citations
High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

326
Citations
Band offsets and electronic structure of SiC/SiO2 interfaces

Valeri Afanas'ev;M. Bassler;G. Pensl;M. Schulz

325
Citations
Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2

Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns

282
Citations
Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation

V. V. Afanas'ev;A. Stesmans;F. Ciobanu;G. Pensl

276
Citations
Can silicon behave like graphene? A first-principles study

Michel Houssa;Geoffrey Pourtois;Valeri Afanas'ev;Andre Stesmans

273
Citations
Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

Michel Houssa;Valeri Afanas'ev;Andre Stesmans;MM Heyns

271
Citations
Internal photoemission of electrons and holes from (100)Si into HfO2

Valeri Afanas'ev;Andre Stesmans;F Chen;X Shi

267
Citations
Vibrational properties of silicene and germanene

Emilio Scalise;Michel Houssa;Geoffrey Pourtois;Geoffrey Pourtois;B. van den Broek

227
Citations
Electron spin resonance features of interface defects in thermal (100)Si/SiO2

Andre Stesmans;Valeri Afanas'ev

212
Citations
Band alignment between (100)Si and complex rare earth∕transition metal oxides

Valeri Afanas'ev;Andre Stesmans;C Zhao;M Caymax

202
Citations
Ternary rare-earth metal oxide high-k layers on silicon oxide

C Zhao;T Witters;B Brijs;H Bender

197
Citations
Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators

Valeri Afanas'ev;Michel Houssa;Andre Stesmans;MM Heyns

192
Citations
Shallow electron traps at the 4H–SiC/SiO2 interface

Valeri Afanas'ev;Andre Stesmans;M Bassler;G Pensl

186
Citations
Interface traps and dangling-bond defects in (100)Ge/HfO2

Valeri Afanas'ev;YG Fedorenko;Andre Stesmans

181
Citations
Band alignment and defect states at SiC/oxide interfaces

Valeri Afanas'ev;F Ciobanu;S Dimitrijev;G Pensl

181
Citations
Passivation of Ge ( 100 ) ∕ GeO2 ∕ high-κ Gate Stacks Using Thermal Oxide Treatments

F. Bellenger;M. Houssa;A. Delabie;V. Afanasiev

162
Citations
Electrical activity of interfacial paramagnetic defects in thermal (100) Si/SiO2

Andre Stesmans;Valeri Afanas'ev

160
Citations