Gerhard Pensl

Overview

Best Publications

• Intrinsic SiC/SiO2 Interface States

  Valeri Afanas'ev;M. Bassler;G. Pensl;M. J. Schulz

  880
  Citations

• Silicon carbide : recent major advances

  W. J. Choyke;弘之 松波;G. Pensl

  566
  Citations

• Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

  T. Dalibor;G. Pensl;H. Matsunami;T. Kimoto

  535
  Citations

• Insulating Films on Semiconductors

  Max J. Schulz;Gerhard Pensl

  474
  Citations

• Electrical and optical characterization of SiC

  G. Pensl;W.J. Choyke

  402
  Citations

• Doping of SiC by Implantation of Boron and Aluminum

  T. Troffer;M. Schadt;T. Frank;H. Itoh

  399
  Citations

• Band offsets and electronic structure of SiC/SiO2 interfaces

  Valeri Afanas'ev;M. Bassler;G. Pensl;M. Schulz

  325
  Citations

• Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation

  V. V. Afanas'ev;A. Stesmans;F. Ciobanu;G. Pensl

  276
  Citations

• Physical Properties of SiC

  Unknown

  255
  Citations

• Nitrogen donors in 4H‐silicon carbide

  W. Götz;A. Schöner;G. Pensl;W. Suttrop

  248
  Citations

• Properties of the oxygen vacancy in ZnO

  D.M. Hofmann;D. Pfisterer;J. Sann;B.K. Meyer

  213
  Citations

• Hall effect and infrared absorption measurements on nitrogen donors in 6H‐silicon carbide

  W. Suttrop;G. Pensl;W. J. Choyke;R. Stein

  210
  Citations

• Shallow electron traps at the 4H–SiC/SiO2 interface

  Valeri Afanas'ev;Andre Stesmans;M Bassler;G Pensl

  186
  Citations

• Band alignment and defect states at SiC/oxide interfaces

  Valeri Afanas'ev;F Ciobanu;S Dimitrijev;G Pensl

  181
  Citations

• Boron-related deep centers in 6H-SiC

  W. Suttrop;G. Pensl;P. Lanig

  176
  Citations

• Electrical activation of high concentrations of N+ and P+ ions implanted into 4H–SiC

  M. Laube;F. Schmid;G. Pensl;G. Wagner

  172
  Citations

• Photoluminescence and transport studies of boron in 4H SiC

  S. G. Sridhara;L. L. Clemen;R. P. Devaty;W. J. Choyke

  170
  Citations

• Elimination of SiC/SiO2 interface states by preoxidation ultraviolet‐ozone cleaning

  Valeri Afanas'ev;Andre Stesmans;M. Bassler;G. Pensl

  158
  Citations

• Nitrogen donors and deep levels in high‐quality 4H–SiC epilayers grown by chemical vapor deposition

  T. Kimoto;A. Itoh;H. Matsunami;S. Sridhara

  156
  Citations

• Al2O3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001)

  K. Y. Gao;T. Seyller;Lothar. Ley;F. Ciobanu

  152
  Citations

• Electrical and Optical Characterization of SiC

  Gerhard Pensl;Frank Schmid;Florin Ciobanu;Michael Laube

  33
  Citations