What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Photon
- Silicon
Gerhard Pensl focuses on Analytical chemistry, Silicon carbide, Ion implantation, Annealing and Wide-bandgap semiconductor.
The various areas that he examines in his Analytical chemistry study include Hall effect, Doping and Chemical vapor deposition.
His work in Doping addresses issues such as Silicon, which are connected to fields such as Atomic physics, Semiconductor materials, Acceptor and Wafer.
Gerhard Pensl interconnects Titanium, Capacitor, Semiconductor and Thermal oxidation in the investigation of issues within Silicon carbide.
His work in Ion implantation covers topics such as Inorganic chemistry which are related to areas like Shallow donor and Atmospheric temperature range.
His study focuses on the intersection of Wide-bandgap semiconductor and fields such as Oxide with connections in the field of Nanotechnology and Passivation.
His most cited work include:
- Intrinsic SiC/SiO2 Interface States (538 citations)
- Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy (334 citations)
- Insulating Films on Semiconductors (306 citations)
What are the main themes of his work throughout his whole career to date?
His primary areas of study are Analytical chemistry, Optoelectronics, Deep-level transient spectroscopy, Silicon and Silicon carbide.
His Analytical chemistry research is multidisciplinary, incorporating elements of Hall effect, Ion implantation, Annealing and Doping.
The study incorporates disciplines such as Oxide and Admittance spectroscopy in addition to Optoelectronics.
His Deep-level transient spectroscopy study combines topics from a wide range of disciplines, such as Band gap and Atomic physics.
Gerhard Pensl has included themes like Crystallography, Passivation and Activation energy in his Silicon study.
His research in Silicon carbide intersects with topics in Wide-bandgap semiconductor, Nanotechnology, Semiconductor and Sublimation.
He most often published in these fields:
- Analytical chemistry (35.94%)
- Optoelectronics (22.06%)
- Deep-level transient spectroscopy (18.15%)
What were the highlights of his more recent work (between 2008-2014)?
- Analytical chemistry (35.94%)
- Deep-level transient spectroscopy (18.15%)
- Optoelectronics (22.06%)
In recent papers he was focusing on the following fields of study:
Gerhard Pensl focuses on Analytical chemistry, Deep-level transient spectroscopy, Optoelectronics, Atomic physics and Electron beam processing.
The Analytical chemistry study combines topics in areas such as Doping, Annealing, Hall effect, Conductivity and Band gap.
His work investigates the relationship between Band gap and topics such as Thermal oxidation that intersect with problems in Ion implantation and Deep level.
His work is dedicated to discovering how Deep-level transient spectroscopy, Schottky diode are connected with Epitaxy, Activation energy, Poole–Frenkel effect and Vacancy defect and other disciplines.
His Optoelectronics research includes themes of Power and Silicon carbide.
His study in Silicon carbide is interdisciplinary in nature, drawing from both Nanotechnology, Semiconductor, Volume and Power semiconductor device.
Between 2008 and 2014, his most popular works were:
- Reduction of deep levels generated by ion implantation into n- and p-type 4H–SiC (29 citations)
- Silicon Carbide: Volume 2: Power Devices and Sensors (22 citations)
- Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications (18 citations)
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