2026 John R. Williams: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	National Ranking	Publications	Citations
Materials Science	48	10854	2563	201	8264

Discipline name

D-Index

World Ranking

National Ranking

Publications

Citations

Materials Science

10854

2563

201

8264

Overview

John R. Williams is affiliated with Auburn University in the United States. Their research spans several fields with a primary focus on Medicine and notable work in subfields such as Sociology and Political Science, Epidemiology, Neurology, Public Health, Environmental and Occupational Health, and Infectious Diseases.

The scientist's recent publications cover a range of topics, including both medical and technical subjects. Notable papers include:

Current systematic reviews and meta-analyses of COVID-19 (2021) published in World Journal of Virology
Advanced Emission Controls and E-fuels on a Gasoline Car for Zero-Impact Emissions (2022) published in SAE International Journal of Advances and Current Practices in Mobility
United States Medicolegal Progress and Innovation in Telemedicine in the Age of COVID-19: A Primer for Neurosurgeons (2021) published in Neurosurgery
Fracture shearing of polycrystalline material simulations using the material point method (2020) published in Computational Particle Mechanics
Social contact data for Zimbabwe (2020) published in Zenodo (CERN European Organization for Nuclear Research)

Their frequent co-authors include Kassoum Kayentao, Sheick Oumar Coulibaly, Kalifa Bojang, Harry Tagbor, and Brian Greenwood, each having collaborated on multiple occasions.

John R. Williams has contributed extensively to various publication venues, with the highest number of works appearing in Studies in Religion/Sciences Religieuses and UNC Libraries. Other repeat publication venues include Abstracts with programs - Geological Society of America, Neurosurgery, and Zenodo (CERN European Organization for Nuclear Research).

Main research topics covered in their work highlight interdisciplinary interests and include:

Fluid Dynamics Simulations and Interactions
Traumatic Brain Injury and Neurovascular Disturbances
Chinese history and philosophy
Child Nutrition and Water Access
Religion and Society Interactions
Respiratory viral infections research
Malaria Research and Control

Best Publications

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

G.Y. Chung;C.C. Tin;J.R. Williams;K. McDonald

870
Citations
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

G. Y. Chung;C. C. Tin;J. R. Williams;K. McDonald

606
Citations
Modified Deal Grove model for the thermal oxidation of silicon carbide

Y. Song;S. Dhar;L. C. Feldman;G. Chung

335
Citations
The Physics of Ohmic Contacts to SiC

J. Crofton;L. M. Porter;J. R. Williams

287
Citations
High‐temperature ohmic contact to n‐type 6H‐SiC using nickel

J. Crofton;P. G. McMullin;J. R. Williams;M. J. Bozack

286
Citations
Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

John Rozen;John Rozen;Sarit Dhar;Sarit Dhar;M. E. Zvanut;J. R. Williams

249
Citations
Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

Chao-Yang Lu;J.A. Cooper;T. Tsuji;Gilyong Chung

200
Citations
Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen.

Sanwu Wang;S. Dhar;Shu Rui Wang;A. C. Ahyi

182
Citations
Contact resistance measurements on p‐type 6H‐SiC

J. Crofton;P. A. Barnes;J. R. Williams;J. A. Edmond

176
Citations
Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

J. Rozen;A. C. Ahyi;Xingguang Zhu;J. R. Williams

163
Citations
Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures

R. K. Chanana;K. McDonald;M. Di Ventra;S. T. Pantelides;S. T. Pantelides

150
Citations
Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

Gang Liu;A. C. Ahyi;Yi Xu;T. Isaacs-Smith

145
Citations
Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC

K. McDonald;K. McDonald;R. A. Weller;S. T. Pantelides;L. C. Feldman

138
Citations
Lasing in whispering gallery mode in ZnO nanonails

D. Wang;H. W. Seo;C.-C. Tin;M. J. Bozack

137
Citations
Titanium and aluminum-titanium ohmic contacts to p-type SiC

J. Crofton;L. Beyer;J.R. Williams;E.D. Luckowski

134
Citations
Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC

J. Crofton;J. Crofton;S.E. Mohney;J.R. Williams;T. Isaacs-Smith

108
Citations
Effects of postgrowth annealing treatment on the photoluminescence of zinc oxide nanorods

D. Wang;H. W. Seo;C. C. Tin;M. J. Bozack

105
Citations
Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(112̄0) 4H–SiC interface

S. Dhar;Y. W. Song;L. C. Feldman;T. Isaacs-Smith

101
Citations
Interface trap passivation for SiO2∕(0001¯) C-terminated 4H-SiC

S. Dhar;L. C. Feldman;S. Wang;T. Isaacs-Smith

99
Citations
High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer

Y. K. Sharma;A. C. Ahyi;T. Isaacs-Smith;A. Modic

98
Citations