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John R. Williams

John R. Williams

Auburn University
United States

D-Index & Metrics

Discipline name D-Index World Ranking National Ranking Publications Citations
Materials Science 48 10852 2560 201 8264

John R. Williams publications per year

The chart shows the history of publications by John R. Williams between 1978 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. John R. Williams published across 48 years, from 1978 to 2025, averaging 5.1 papers a year. Output peaked at 17 publications in 2006. 17 of the 243 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1978 to 2025. Vertical axis: number of publications, 0 to 17. Peak 17 publications in 2006. 1978: 1 publication 1979: 1 publication 1980: 0 publications 1981: 0 publications 1982: 1 publication 1983: 0 publications 1984: 0 publications 1985: 3 publications 1986: 1 publication 1987: 2 publications 1988: 2 publications 1989: 1 publication 1990: 2 publications 1991: 5 publications 1992: 3 publications 1993: 3 publications 1994: 4 publications 1995: 5 publications 1996: 4 publications 1997: 2 publications 1998: 5 publications 1999: 1 publication 2000: 16 publications 2001: 6 publications 2002: 16 publications 2003: 9 publications 2004: 10 publications 2005: 16 publications 2006: 17 publications 2007: 13 publications 2008: 12 publications 2009: 5 publications 2010: 10 publications 2011: 7 publications 2012: 10 publications 2013: 4 publications 2014: 9 publications 2015: 1 publication 2016: 0 publications 2017: 0 publications 2018: 0 publications 2019: 0 publications 2020: 0 publications 2021: 0 publications 2022: 10 publications 2023: 9 publications 2024: 3 publications 2025: 14 publications
1978 2025

243 publications in total across all disciplines

View publications per year as a table
John R. Williams: publications per year, 1978 to 2025
Year Publications
1978 1
1979 1
1980 0
1981 0
1982 1
1983 0
1984 0
1985 3
1986 1
1987 2
1988 2
1989 1
1990 2
1991 5
1992 3
1993 3
1994 4
1995 5
1996 4
1997 2
1998 5
1999 1
2000 16
2001 6
2002 16
2003 9
2004 10
2005 16
2006 17
2007 13
2008 12
2009 5
2010 10
2011 7
2012 10
2013 4
2014 9
2015 1
2016 0
2017 0
2018 0
2019 0
2020 0
2021 0
2022 10
2023 9
2024 3
2025 14
Total 243
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John R. Williams publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where John R. Williams sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 190–209 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 201 publications — 31st percentile

31% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891 201
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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John R. Williams D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where John R. Williams sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 48–49 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 48 D-Index — 17th percentile

17% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598 48
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

John R. Williams is affiliated with Auburn University in the United States. Their research spans several fields with a primary focus on Medicine and notable work in subfields such as Sociology and Political Science, Epidemiology, Neurology, Public Health, Environmental and Occupational Health, and Infectious Diseases.

The scientist's recent publications cover a range of topics, including both medical and technical subjects. Notable papers include:

  • Current systematic reviews and meta-analyses of COVID-19 (2021) published in World Journal of Virology
  • Advanced Emission Controls and E-fuels on a Gasoline Car for Zero-Impact Emissions (2022) published in SAE International Journal of Advances and Current Practices in Mobility
  • United States Medicolegal Progress and Innovation in Telemedicine in the Age of COVID-19: A Primer for Neurosurgeons (2021) published in Neurosurgery
  • Fracture shearing of polycrystalline material simulations using the material point method (2020) published in Computational Particle Mechanics
  • Social contact data for Zimbabwe (2020) published in Zenodo (CERN European Organization for Nuclear Research)

Their frequent co-authors include Kassoum Kayentao, Sheick Oumar Coulibaly, Kalifa Bojang, Harry Tagbor, and Brian Greenwood, each having collaborated on multiple occasions.

John R. Williams has contributed extensively to various publication venues, with the highest number of works appearing in Studies in Religion/Sciences Religieuses and UNC Libraries. Other repeat publication venues include Abstracts with programs - Geological Society of America, Neurosurgery, and Zenodo (CERN European Organization for Nuclear Research).

Main research topics covered in their work highlight interdisciplinary interests and include:

  • Fluid Dynamics Simulations and Interactions
  • Traumatic Brain Injury and Neurovascular Disturbances
  • Chinese history and philosophy
  • Child Nutrition and Water Access
  • Religion and Society Interactions
  • Respiratory viral infections research
  • Malaria Research and Control

Best Publications

  • Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

    G.Y. Chung;C.C. Tin;J.R. Williams;K. McDonald

  • Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

    G. Y. Chung;C. C. Tin;J. R. Williams;K. McDonald

  • Modified Deal Grove model for the thermal oxidation of silicon carbide

    Y. Song;S. Dhar;L. C. Feldman;G. Chung

  • The Physics of Ohmic Contacts to SiC

    J. Crofton;L. M. Porter;J. R. Williams

  • High‐temperature ohmic contact to n‐type 6H‐SiC using nickel

    J. Crofton;P. G. McMullin;J. R. Williams;M. J. Bozack

  • Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

    John Rozen;John Rozen;Sarit Dhar;Sarit Dhar;M. E. Zvanut;J. R. Williams

  • Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

    Chao-Yang Lu;J.A. Cooper;T. Tsuji;Gilyong Chung

  • Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen.

    Sanwu Wang;S. Dhar;Shu Rui Wang;A. C. Ahyi

  • Contact resistance measurements on p‐type 6H‐SiC

    J. Crofton;P. A. Barnes;J. R. Williams;J. A. Edmond

  • Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

    J. Rozen;A. C. Ahyi;Xingguang Zhu;J. R. Williams

  • Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures

    R. K. Chanana;K. McDonald;M. Di Ventra;S. T. Pantelides;S. T. Pantelides

  • Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

    Gang Liu;A. C. Ahyi;Yi Xu;T. Isaacs-Smith

  • Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC

    K. McDonald;K. McDonald;R. A. Weller;S. T. Pantelides;L. C. Feldman

  • Lasing in whispering gallery mode in ZnO nanonails

    D. Wang;H. W. Seo;C.-C. Tin;M. J. Bozack

  • Titanium and aluminum-titanium ohmic contacts to p-type SiC

    J. Crofton;L. Beyer;J.R. Williams;E.D. Luckowski

  • Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC

    J. Crofton;J. Crofton;S.E. Mohney;J.R. Williams;T. Isaacs-Smith

  • Effects of postgrowth annealing treatment on the photoluminescence of zinc oxide nanorods

    D. Wang;H. W. Seo;C. C. Tin;M. J. Bozack

  • Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(112̄0) 4H–SiC interface

    S. Dhar;Y. W. Song;L. C. Feldman;T. Isaacs-Smith

  • Interface trap passivation for SiO2∕(0001¯) C-terminated 4H-SiC

    S. Dhar;L. C. Feldman;S. Wang;T. Isaacs-Smith

  • High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer

    Y. K. Sharma;A. C. Ahyi;T. Isaacs-Smith;A. Modic

Frequent Co-Authors

Leonard C. Feldman
Leonard C. Feldman Rutgers, The State University of New Jersey
Sokrates T. Pantelides
Sokrates T. Pantelides Vanderbilt University
Suzanne E. Mohney
Suzanne E. Mohney Pennsylvania State University
Robert A. Weller
Robert A. Weller Woods Hole Oceanographic Institution
Patricia M. Mooney
Patricia M. Mooney Simon Fraser University
John D. Cressler
John D. Cressler Georgia Institute of Technology
Eric Garfunkel
Eric Garfunkel Rutgers, The State University of New Jersey
Paul W. Marshall
Paul W. Marshall United States Naval Research Laboratory
Fan Ren
Fan Ren University of Florida
Stephen J. Pearton
Stephen J. Pearton University of Florida

External Links

Personal website of John R. Williams

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Best Scientists Citing John R. Williams

Tsunenobu Kimoto

Tsunenobu Kimoto

Kyoto University

Publications: 76

Fabrizio Roccaforte

Fabrizio Roccaforte

National Research Council (CNR)

Publications: 63

Anant K. Agarwal

Anant K. Agarwal

The Ohio State University

Publications: 44

Filippo Giannazzo

Filippo Giannazzo

National Research Council (CNR)

Publications: 41

Sei-Hyung Ryu

Sei-Hyung Ryu

Wolfspeed, Inc.

Publications: 40

Patrick Fiorenza

Patrick Fiorenza

National Research Council (CNR)

Publications: 38

Sima Dimitrijev

Sima Dimitrijev

Griffith University

Publications: 35

Fan Ren

Fan Ren

University of Florida

Publications: 34

Carl-Mikael Zetterling

Carl-Mikael Zetterling

Royal Institute of Technology

Publications: 34

Jun Suda

Jun Suda

Nagoya University

Publications: 33

Sokrates T. Pantelides

Sokrates T. Pantelides

Vanderbilt University

Publications: 30

Mikael Östling

Mikael Östling

Royal Institute of Technology

Publications: 27

Leonard C. Feldman

Leonard C. Feldman

Rutgers, The State University of New Jersey

Publications: 25

Stephen J. Pearton

Stephen J. Pearton

University of Florida

Publications: 22

Amador Pérez-Tomás

Amador Pérez-Tomás

Institute of Microelectronics of Barcelona

Publications: 22

Hajime Okumura

Hajime Okumura

National Institute of Advanced Industrial Science and Technology

Publications: 20

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