John R. Williams

John R. Williams publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where John R. Williams sits on this spectrum.

John R. Williams D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where John R. Williams sits on this spectrum.

Overview

Best Publications

• Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

  G.Y. Chung;C.C. Tin;J.R. Williams;K. McDonald

  870
  Citations

• Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

  G. Y. Chung;C. C. Tin;J. R. Williams;K. McDonald

  606
  Citations

• Modified Deal Grove model for the thermal oxidation of silicon carbide

  Y. Song;S. Dhar;L. C. Feldman;G. Chung

  335
  Citations

• The Physics of Ohmic Contacts to SiC

  J. Crofton;L. M. Porter;J. R. Williams

  287
  Citations

• High‐temperature ohmic contact to n‐type 6H‐SiC using nickel

  J. Crofton;P. G. McMullin;J. R. Williams;M. J. Bozack

  286
  Citations

• Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

  John Rozen;John Rozen;Sarit Dhar;Sarit Dhar;M. E. Zvanut;J. R. Williams

  249
  Citations

• Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

  Chao-Yang Lu;J.A. Cooper;T. Tsuji;Gilyong Chung

  200
  Citations

• Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen.

  Sanwu Wang;S. Dhar;Shu Rui Wang;A. C. Ahyi

  182
  Citations

• Contact resistance measurements on p‐type 6H‐SiC

  J. Crofton;P. A. Barnes;J. R. Williams;J. A. Edmond

  176
  Citations

• Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

  J. Rozen;A. C. Ahyi;Xingguang Zhu;J. R. Williams

  163
  Citations

• Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures

  R. K. Chanana;K. McDonald;M. Di Ventra;S. T. Pantelides;S. T. Pantelides

  150
  Citations

• Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

  Gang Liu;A. C. Ahyi;Yi Xu;T. Isaacs-Smith

  145
  Citations

• Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC

  K. McDonald;K. McDonald;R. A. Weller;S. T. Pantelides;L. C. Feldman

  138
  Citations

• Lasing in whispering gallery mode in ZnO nanonails

  D. Wang;H. W. Seo;C.-C. Tin;M. J. Bozack

  137
  Citations

• Titanium and aluminum-titanium ohmic contacts to p-type SiC

  J. Crofton;L. Beyer;J.R. Williams;E.D. Luckowski

  134
  Citations

• Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC

  J. Crofton;J. Crofton;S.E. Mohney;J.R. Williams;T. Isaacs-Smith

  108
  Citations

• Effects of postgrowth annealing treatment on the photoluminescence of zinc oxide nanorods

  D. Wang;H. W. Seo;C. C. Tin;M. J. Bozack

  105
  Citations

• Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(112̄0) 4H–SiC interface

  S. Dhar;Y. W. Song;L. C. Feldman;T. Isaacs-Smith

  101
  Citations

• Interface trap passivation for SiO2∕(0001¯) C-terminated 4H-SiC

  S. Dhar;L. C. Feldman;S. Wang;T. Isaacs-Smith

  99
  Citations

• High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer

  Y. K. Sharma;A. C. Ahyi;T. Isaacs-Smith;A. Modic

  98
  Citations