H-Index & Metrics Best Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Materials Science D-index 41 Citations 5,940 159 World Ranking 8396 National Ranking 2221


What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Oxygen
  • Hydrogen

The scientist’s investigation covers issues in Passivation, Annealing, Optoelectronics, Nitrogen and Wide-bandgap semiconductor. His Passivation research integrates issues from Inorganic chemistry and Hydrogen. His studies deal with areas such as Contact resistance, Ohmic contact and Analytical chemistry as well as Annealing.

His study in the fields of Auger electron spectroscopy under the domain of Analytical chemistry overlaps with other disciplines such as Order of magnitude. His study in Nitrogen is interdisciplinary in nature, drawing from both Phosphosilicate glass and Oxide. His work deals with themes such as Silicon carbide and Electron mobility, which intersect with Wide-bandgap semiconductor.

His most cited work include:

  • Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide (506 citations)
  • High‐temperature ohmic contact to n‐type 6H‐SiC using nickel (182 citations)
  • The Physics of Ohmic Contacts to SiC (177 citations)

What are the main themes of his work throughout his whole career to date?

Optoelectronics, Analytical chemistry, Annealing, Passivation and Oxide are his primary areas of study. John R. Williams combines subjects such as Silicon carbide and Capacitor with his study of Optoelectronics. The study incorporates disciplines such as Etching, Deep-level transient spectroscopy, Ohmic contact and Contact resistance in addition to Analytical chemistry.

His Annealing study combines topics in areas such as Conduction band and Metal. His work in Passivation addresses subjects such as Nitrogen, which are connected to disciplines such as Chemical physics, Electron injection and State density. Power MOSFET and Threshold voltage is closely connected to Electron mobility in his research, which is encompassed under the umbrella topic of Wide-bandgap semiconductor.

He most often published in these fields:

  • Optoelectronics (43.17%)
  • Analytical chemistry (31.15%)
  • Annealing (26.78%)

What were the highlights of his more recent work (between 2009-2015)?

  • Optoelectronics (43.17%)
  • Analytical chemistry (31.15%)
  • Passivation (22.40%)

In recent papers he was focusing on the following fields of study:

John R. Williams mostly deals with Optoelectronics, Analytical chemistry, Passivation, Annealing and Oxide. His Optoelectronics research incorporates elements of Transistor, MOSFET and Silicon carbide. His Analytical chemistry research includes elements of Etching, Wide-bandgap semiconductor, Deep-level transient spectroscopy and Molecular physics.

The various areas that John R. Williams examines in his Wide-bandgap semiconductor study include Ion, Secondary ion mass spectrometry, Crystallography and Electron mobility. His studies in Passivation integrate themes in fields like Phosphosilicate glass, Field effect and Nitrogen. His research in Annealing intersects with topics in Semiconductor, Metal and Density of states.

Between 2009 and 2015, his most popular works were:

  • Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs (95 citations)
  • Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation (83 citations)
  • High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer (67 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Oxygen
  • Organic chemistry

John R. Williams focuses on Optoelectronics, Annealing, Analytical chemistry, Nitrogen and Oxide. His research investigates the connection between Optoelectronics and topics such as Transistor that intersect with problems in Logic gate. His Annealing research is multidisciplinary, relying on both Semiconductor, Dopant and Antimony.

His Nitrogen study combines topics from a wide range of disciplines, such as Passivation and Trap density. His Passivation study combines topics from a wide range of disciplines, such as Phosphosilicate glass, Trench and Power MOSFET. His Oxide study frequently draws connections between related disciplines such as Wide-bandgap semiconductor.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

G.Y. Chung;C.C. Tin;J.R. Williams;K. McDonald.
IEEE Electron Device Letters (2001)

666 Citations

The Physics of Ohmic Contacts to SiC

J. Crofton;L. M. Porter;J. R. Williams.
Physica Status Solidi B-basic Solid State Physics (1997)

278 Citations

High‐temperature ohmic contact to n‐type 6H‐SiC using nickel

J. Crofton;P. G. McMullin;J. R. Williams;M. J. Bozack.
Journal of Applied Physics (1995)

275 Citations

Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen.

Sanwu Wang;S. Dhar;Shu Rui Wang;A. C. Ahyi.
Physical Review Letters (2007)

225 Citations

Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

John Rozen;John Rozen;Sarit Dhar;Sarit Dhar;M. E. Zvanut;J. R. Williams.
Journal of Applied Physics (2009)

215 Citations

Contact resistance measurements on p‐type 6H‐SiC

J. Crofton;P. A. Barnes;J. R. Williams;J. A. Edmond.
Applied Physics Letters (1993)

171 Citations

Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

Chao-Yang Lu;J.A. Cooper;T. Tsuji;Gilyong Chung.
IEEE Transactions on Electron Devices (2003)

170 Citations

Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures

R. K. Chanana;K. McDonald;M. Di Ventra;S. T. Pantelides;S. T. Pantelides.
Applied Physics Letters (2000)

143 Citations

Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

J. Rozen;A. C. Ahyi;Xingguang Zhu;J. R. Williams.
IEEE Transactions on Electron Devices (2011)

140 Citations

Titanium and aluminum-titanium ohmic contacts to p-type SiC

J. Crofton;L. Beyer;J.R. Williams;E.D. Luckowski.
Solid-state Electronics (1997)

130 Citations

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