The scientist’s investigation covers issues in Analytical chemistry, Oxide, Dielectric, Silicon and Nanotechnology. Eric Garfunkel specializes in Analytical chemistry, namely X-ray photoelectron spectroscopy. The concepts of his Oxide study are interwoven with issues in Oxygen evolution, Inorganic chemistry, Chemical state, Annealing and Torr.
His work deals with themes such as Gate dielectric, Chemical engineering and Engineering physics, which intersect with Dielectric. His work investigates the relationship between Silicon and topics such as Atomic physics that intersect with problems in Quantum chemical and Nanostructure. His work on Chemical vapor deposition, Graphene and Drug carrier as part of general Nanotechnology study is frequently connected to Förster resonance energy transfer, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them.
Analytical chemistry, Oxide, Silicon, Inorganic chemistry and Optoelectronics are his primary areas of study. His work carried out in the field of Analytical chemistry brings together such families of science as Ion, Thin film, Scattering and Annealing. The Oxide study which covers Nanotechnology that intersects with Conductivity.
His Silicon research is multidisciplinary, relying on both Hydrogen, Substrate, Vacancy defect and Dielectric. His Dielectric research includes themes of Gate dielectric and Condensed matter physics, Band gap. His Inorganic chemistry research integrates issues from Nickel, Adsorption, Catalysis, Oxygen and Alkali metal.
Eric Garfunkel focuses on Catalysis, Oxide, Graphene, Nanotechnology and Inorganic chemistry. His study in Oxide is interdisciplinary in nature, drawing from both Thin film, Hydroxide, Analytical chemistry, Substrate and Aqueous solution. Eric Garfunkel has researched Analytical chemistry in several fields, including Etching, Wide-bandgap semiconductor, Ion and Physical vapor deposition.
In the subject of general Graphene, his work in Graphene oxide paper is often linked to Microwave chemistry, thereby combining diverse domains of study. His studies in Nanotechnology integrate themes in fields like Hybrid solar cell, Electron paramagnetic resonance and Hydrogen atom. His biological study spans a wide range of topics, including Carbon, Manganese, Chemical engineering and Nitrogen.
His scientific interests lie mostly in Catalysis, Inorganic chemistry, Oxide, Graphene and Nanotechnology. The various areas that Eric Garfunkel examines in his Inorganic chemistry study include Carbon, Electrochemistry, Manganese and Nickel. His studies deal with areas such as High-resolution transmission electron microscopy, Nitrogen, Powder diffraction, Analytical chemistry and Aqueous solution as well as Oxide.
His Analytical chemistry research is multidisciplinary, incorporating elements of Etching, Tetramethylammonium hydroxide, Wide-bandgap semiconductor and Substrate, Gate oxide. His work in Graphene addresses subjects such as Doping, which are connected to disciplines such as Nitrification and Work function. His study in the fields of Graphene oxide paper and Drug delivery under the domain of Nanotechnology overlaps with other disciplines such as Mesoporous silica and Biophysics.
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Evolution of Electrical, Chemical, and Structural Properties of Transparent and Conducting Chemically Derived Graphene Thin Films
Cecilia Mattevi;Goki Eda;Stefano Agnoli;Steve Miller.
Advanced Functional Materials (2009)
Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
M. L. Green;E. P. Gusev;R. Degraeve;Eric Garfunkel.
Journal of Applied Physics (2001)
Photochemical Water Oxidation by Crystalline Polymorphs of Manganese Oxides: Structural Requirements for Catalysis
David M. Robinson;Yong Bok Go;Michelle Mui;Graeme Gardner.
Journal of the American Chemical Society (2013)
Effect of nitrogen on band alignment in HfSiON gate dielectrics
S. Sayan;N. V. Nguyen;J. Ehrstein;J. J. Chambers.
Applied Physics Letters (2005)
HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition
Martin M. Frank;Glen D. Wilk;Dmitri Starodub;Torgny Gustafsson.
Applied Physics Letters (2005)
Intermixing at the tantalum oxide/silicon interface in gate dielectric structures
G. B. Alers;D. J. Werder;Y. Chabal;H. C. Lu.
Applied Physics Letters (1998)
Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3(001) heterojunction
Scott A. Chambers;Mark H. Engelhard;V. Shutthanandan;Zihua Zhu.
Surface Science Reports (2010)
TITANIUM AND REDUCED TITANIA OVERLAYERS ON TITANIUM DIOXIDE (110)
J.T. Mayer;U. Diebold;T.E. Madey;E. Garfunkel.
Journal of Electron Spectroscopy and Related Phenomena (1995)
High temperature stability in lanthanum and zirconia-based gate dielectrics
J.-P. Maria;D. Wicaksana;A. I. Kingon;B. Busch.
Journal of Applied Physics (2001)
Band offsets of ultrathin high- κ oxide films with Si
Eric Bersch;Sylvie Rangan;Robert Allen Bartynski;Eric Garfunkel.
Physical Review B (2008)
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