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Hiroshi Iwai

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 64 1285 1226 37 35 930 17285

Hiroshi Iwai publications per year

The chart shows the history of publications by Hiroshi Iwai between 1970 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Hiroshi Iwai published across 56 years, from 1970 to 2025, averaging 17.7 papers a year. Output peaked at 67 publications in 2011. 9 of the 990 publications appeared in the last two years.

No. of publications
20 40 60
Bar chart. Horizontal axis: year, 1970 to 2025. Vertical axis: number of publications, 0 to 67. Peak 67 publications in 2011. 1970: 1 publication 1971: 0 publications 1972: 0 publications 1973: 0 publications 1974: 0 publications 1975: 0 publications 1976: 1 publication 1977: 0 publications 1978: 1 publication 1979: 3 publications 1980: 3 publications 1981: 2 publications 1982: 5 publications 1983: 2 publications 1984: 3 publications 1985: 5 publications 1986: 2 publications 1987: 8 publications 1988: 6 publications 1989: 12 publications 1990: 17 publications 1991: 8 publications 1992: 12 publications 1993: 22 publications 1994: 20 publications 1995: 23 publications 1996: 14 publications 1997: 11 publications 1998: 23 publications 1999: 20 publications 2000: 14 publications 2001: 17 publications 2002: 19 publications 2003: 26 publications 2004: 27 publications 2005: 30 publications 2006: 58 publications 2007: 27 publications 2008: 46 publications 2009: 43 publications 2010: 58 publications 2011: 67 publications 2012: 45 publications 2013: 62 publications 2014: 39 publications 2015: 40 publications 2016: 27 publications 2017: 33 publications 2018: 27 publications 2019: 18 publications 2020: 14 publications 2021: 6 publications 2022: 4 publications 2023: 10 publications 2024: 6 publications 2025: 3 publications
1970 2025

990 publications in total across all disciplines

View publications per year as a table
Hiroshi Iwai: publications per year, 1970 to 2025
Year Publications
1970 1
1971 0
1972 0
1973 0
1974 0
1975 0
1976 1
1977 0
1978 1
1979 3
1980 3
1981 2
1982 5
1983 2
1984 3
1985 5
1986 2
1987 8
1988 6
1989 12
1990 17
1991 8
1992 12
1993 22
1994 20
1995 23
1996 14
1997 11
1998 23
1999 20
2000 14
2001 17
2002 19
2003 26
2004 27
2005 30
2006 58
2007 27
2008 46
2009 43
2010 58
2011 67
2012 45
2013 62
2014 39
2015 40
2016 27
2017 33
2018 27
2019 18
2020 14
2021 6
2022 4
2023 10
2024 6
2025 3
Total 990
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Hiroshi Iwai publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Hiroshi Iwai sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 914–933 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 930 publications — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16 930
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

Hiroshi Iwai D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Hiroshi Iwai sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 64 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 64 D-Index — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77 64
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Research.com Recognitions

  • 1997 - IEEE Fellow For contributions to ultra-small geometry CMOS BiCMOS devices.

Overview

Hiroshi Iwai is affiliated with the Tokyo Institute of Technology in Japan and has a substantial body of work centered on materials science and engineering. Their research primarily focuses on materials chemistry, electrical and electronic engineering, and catalysis.

Their main research topics include advancements in solid oxide fuel cells, fuel cells and related materials, catalytic processes in materials science, catalysis and oxidation reactions, electrocatalysts for energy conversion, electronic and structural properties of oxides, and the application of machine learning in materials science.

Notable recent publications by Iwai include:

  • Development of 1 kW-class Ammonia-fueled Solid Oxide Fuel Cell Stack, 2020, Fuel Cells
  • Microextrusion printing for increasing electrode-electrolyte interface in anode-supported solid oxide fuel cells, 2020, Journal of Power Sources
  • A microstructure-oriented mathematical model of a direct internal reforming solid oxide fuel cell, 2020, Energy Conversion and Management
  • Experimental investigation of temperature distribution of planar solid oxide fuel cell: Effects of gas flow, power generation, and direct internal reforming, 2020, International Journal of Hydrogen Energy
  • Mechanism of improved electrochemical performance of anode-supported solid oxide fuel cells by mesostructural modification of electrode-electrolyte interface, 2021, Journal of Power Sources

Their frequent coauthors are:

  • Masashi Kishimoto
  • Hideo Yoshida
  • Haewon Seo
  • Yuting Guo
  • Grzegorz Brus

Hiroshi Iwai's publications predominantly appear in the following venues:

  • Journal of Power Sources
  • The Proceedings of the Thermal Engineering Conference
  • International Journal of Hydrogen Energy
  • Doryoku, Enerugi Gijutsu Shinpojiumu koen ronbunshu/Doryoku, enerugi gijutsu no saizensen koen ronbunshu
  • ECS Meeting Abstracts

Iwai's work spans 61 publications in materials science and 37 in engineering, with specific subfields including 59 publications in materials chemistry, 20 in electrical and electronic engineering, 11 in catalysis, 8 in renewable energy, sustainability and the environment, and 5 in biomedical engineering.

Among their recognitions is the IEEE Fellow award received in 1997 for contributions to ultra-small geometry CMOS BiCMOS devices.

Best Publications

  • NiSi salicide technology for scaled CMOS

    Hiroshi Iwai;Tatsuya Ohguro;Shun-ichiro Ohmi

  • On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

    Hei Wong;Hei Wong;Hiroshi Iwai

  • 1.5 nm direct-tunneling gate oxide Si MOSFET's

    H. Sasaki;M. Ono;T. Yoshitomi;T. Ohguro

  • Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

    T. Morimoto;T. Ohguro;S. Momose;T. Iinuma

  • Roadmap for 22nm and beyond (Invited Paper)

    H. Iwai

  • Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films

    T. Ohguro;S. Nakamura;M. Koike;T. Morimoto

  • Characterization of La2O3 and Yb2O3 thin films for high-k gate insulator application

    S. Ohmi;C. Kobayashi;I. Kashiwagi;C. Ohshima

  • Scaling the MOS transistor below 0.1 /spl mu/m: methodology, device structures, and technology requirements

    C. Fiegna;H. Iwai;T. Wada;M. Saito

  • CMOS technology-year 2010 and beyond

    Unknown

  • Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions

    M. Ono;M. Saito;T. Yoshitomi;C. Fiegna

  • A 40 nm gate length n-MOSFET

    M. Ono;M. Saito;T. Yoshitomi;C. Fiegna

  • Advanced gate dielectric materials for sub-100 nm CMOS

    H. Iwai;S. Ohmi;S. Akama;C. Ohshima

  • Silicon integrated circuit technology from past to future

    Hiroshi Iwai;Shu N.ichiro Ohmi

  • Future of nano CMOS technology

    Hiroshi Iwai

  • Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide

    H.S. Momose;S.-I. Nakamura;T. Ohguro;T. Yoshitomi

  • Future perspective and scaling down roadmap for RF CMOS

    E. Morifuji;H.S. Momose;T. Ohguro;T. Yoshitomi

  • A new charge pumping method for determining the spatial distribution of hot-carrier-induced fixed charge in p-MOSFETs

    M. Tsuchiaki;H. Hara;T. Morimoto;H. Iwai

  • Composition, chemical structure, and electronic band structure of rare earth Oxide/Si(100) interfacial transition layer

    T. Hattori;T. Yoshida;T. Shiraishi;K. Takahashi

  • Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETs

    H.S. Momose;M. Ono;T. Yoshitomi;T. Ohguro

  • A NiSi salicide technology for advanced logic devices

    T. Morimoto;H.S. Momose;T. Iinuma;I. Kunishima

  • High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs

    H.S. Momose;E. Morifuji;T. Yoshitomi;I. Saito

Frequent Co-Authors

Hei Wong
Hei Wong City University of Hong Kong
Kenji Shiraishi
Kenji Shiraishi Nagoya University
Hiromichi Ohashi
Hiromichi Ohashi Tokyo Institute of Technology
Enrique Miranda
Enrique Miranda Autonomous University of Barcelona
Robert W. Dutton
Robert W. Dutton Stanford University
Toshiro Hiramoto
Toshiro Hiramoto University of Tokyo
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Toyohiro Chikyow
Toyohiro Chikyow National Institute for Materials Science
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Yoshio Nishi
Yoshio Nishi Stanford University

External Links

Personal website of Hiroshi Iwai

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