D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 38 Citations 7,036 505 World Ranking 3085 National Ranking 120

Research.com Recognitions

Awards & Achievements

1997 - IEEE Fellow For contributions to ultra-small geometry CMOS BiCMOS devices.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Electrical engineering

His scientific interests lie mostly in Optoelectronics, High-κ dielectric, CMOS, Electrical engineering and Analytical chemistry. He has included themes like Voltage, Gate oxide and MOSFET in his Optoelectronics study. Hiroshi Iwai combines subjects such as Lanthanum oxide, Oxide, Thin film, Annealing and Gate dielectric with his study of High-κ dielectric.

Hiroshi Iwai has researched CMOS in several fields, including Transistor and Nanowire, Nanotechnology. His work in the fields of Electrical engineering, such as Integrated circuit and Gate length, intersects with other areas such as Integrated injection logic. His studies in Analytical chemistry integrate themes in fields like Doping, BCL3 and Dielectric.

His most cited work include:

  • NiSi salicide technology for scaled CMOS (305 citations)
  • On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors (285 citations)
  • Roadmap for 22nm and beyond (Invited Paper) (207 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Analytical chemistry, Annealing, Electronic engineering and MOSFET. His research integrates issues of Transistor, Gate dielectric, Gate oxide and Electrical engineering in his study of Optoelectronics. His is doing research in CMOS and Voltage, both of which are found in Electrical engineering.

As a member of one scientific family, Hiroshi Iwai mostly works in the field of Analytical chemistry, focusing on Silicon and, on occasion, Field-effect transistor. The various areas that Hiroshi Iwai examines in his Annealing study include Electrode, Silicate and Capacitor. His MOSFET research is multidisciplinary, relying on both Nanowire and Electron mobility.

He most often published in these fields:

  • Optoelectronics (49.29%)
  • Analytical chemistry (24.44%)
  • Annealing (20.81%)

What were the highlights of his more recent work (between 2013-2021)?

  • Optoelectronics (49.29%)
  • Annealing (20.81%)
  • Electrode (9.09%)

In recent papers he was focusing on the following fields of study:

Hiroshi Iwai focuses on Optoelectronics, Annealing, Electrode, Analytical chemistry and Dielectric. His study in Optoelectronics is interdisciplinary in nature, drawing from both High-electron-mobility transistor, Logic gate and Gate oxide. His studies deal with areas such as High-κ dielectric and Gate dielectric as well as Gate oxide.

His Gate dielectric research incorporates themes from Silicon and Leakage. His work carried out in the field of Annealing brings together such families of science as Inorganic chemistry, Electronic engineering, Electrical resistivity and conductivity and Sputter deposition. His work deals with themes such as Layer, Molecular physics, Capacitance and Voltage, which intersect with Analytical chemistry.

Between 2013 and 2021, his most popular works were:

  • CMOS Logic Device and Circuit Performance of Si Gate All Around Nanowire MOSFET (42 citations)
  • Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs (31 citations)
  • X-ray photoelectron spectroscopy study of high-k CeO2/La2O3 stacked dielectrics (29 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Electrical engineering

His primary areas of study are Optoelectronics, Transistor, Annealing, Dielectric and Nanotechnology. Hiroshi Iwai interconnects Substrate, High-electron-mobility transistor and Voltage in the investigation of issues within Optoelectronics. Many of his studies involve connections with topics such as CMOS and Transistor.

His Annealing study combines topics in areas such as Electrode and Analytical chemistry. The study incorporates disciplines such as Gate dielectric, Equivalent oxide thickness and X-ray photoelectron spectroscopy in addition to Dielectric. Many of his studies on High-κ dielectric apply to Silicon as well.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

NiSi salicide technology for scaled CMOS

Hiroshi Iwai;Tatsuya Ohguro;Shun-ichiro Ohmi.
Microelectronic Engineering (2002)

490 Citations

On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

Hei Wong;Hei Wong;Hiroshi Iwai.
Microelectronic Engineering (2006)

453 Citations

Roadmap for 22nm and beyond (Invited Paper)

H. Iwai.
Microelectronic Engineering (2009)

327 Citations

Characterization of La2O3 and Yb2O3 thin films for high-k gate insulator application

S. Ohmi;C. Kobayashi;I. Kashiwagi;C. Ohshima.
Journal of The Electrochemical Society (2003)

164 Citations

Advanced gate dielectric materials for sub-100 nm CMOS

H. Iwai;S. Ohmi;S. Akama;C. Ohshima.
international electron devices meeting (2002)

145 Citations

Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide

H.S. Momose;S.-I. Nakamura;T. Ohguro;T. Yoshitomi.
IEEE Transactions on Electron Devices (1998)

143 Citations

Future perspective and scaling down roadmap for RF CMOS

E. Morifuji;H.S. Momose;T. Ohguro;T. Yoshitomi.
symposium on vlsi technology (1999)

133 Citations

Silicon integrated circuit technology from past to future

Hiroshi Iwai;Shu N.ichiro Ohmi.
Microelectronics Reliability (2002)

131 Citations

Composition, chemical structure, and electronic band structure of rare earth Oxide/Si(100) interfacial transition layer

T. Hattori;T. Yoshida;T. Shiraishi;K. Takahashi.
Microelectronic Engineering (2004)

130 Citations

Future of nano CMOS technology

Hiroshi Iwai.
Solid-state Electronics (2015)

122 Citations

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