1997 - IEEE Fellow For contributions to ultra-small geometry CMOS BiCMOS devices.
His scientific interests lie mostly in Optoelectronics, High-κ dielectric, CMOS, Electrical engineering and Analytical chemistry. He has included themes like Voltage, Gate oxide and MOSFET in his Optoelectronics study. Hiroshi Iwai combines subjects such as Lanthanum oxide, Oxide, Thin film, Annealing and Gate dielectric with his study of High-κ dielectric.
Hiroshi Iwai has researched CMOS in several fields, including Transistor and Nanowire, Nanotechnology. His work in the fields of Electrical engineering, such as Integrated circuit and Gate length, intersects with other areas such as Integrated injection logic. His studies in Analytical chemistry integrate themes in fields like Doping, BCL3 and Dielectric.
His primary areas of investigation include Optoelectronics, Analytical chemistry, Annealing, Electronic engineering and MOSFET. His research integrates issues of Transistor, Gate dielectric, Gate oxide and Electrical engineering in his study of Optoelectronics. His is doing research in CMOS and Voltage, both of which are found in Electrical engineering.
As a member of one scientific family, Hiroshi Iwai mostly works in the field of Analytical chemistry, focusing on Silicon and, on occasion, Field-effect transistor. The various areas that Hiroshi Iwai examines in his Annealing study include Electrode, Silicate and Capacitor. His MOSFET research is multidisciplinary, relying on both Nanowire and Electron mobility.
Hiroshi Iwai focuses on Optoelectronics, Annealing, Electrode, Analytical chemistry and Dielectric. His study in Optoelectronics is interdisciplinary in nature, drawing from both High-electron-mobility transistor, Logic gate and Gate oxide. His studies deal with areas such as High-κ dielectric and Gate dielectric as well as Gate oxide.
His Gate dielectric research incorporates themes from Silicon and Leakage. His work carried out in the field of Annealing brings together such families of science as Inorganic chemistry, Electronic engineering, Electrical resistivity and conductivity and Sputter deposition. His work deals with themes such as Layer, Molecular physics, Capacitance and Voltage, which intersect with Analytical chemistry.
His primary areas of study are Optoelectronics, Transistor, Annealing, Dielectric and Nanotechnology. Hiroshi Iwai interconnects Substrate, High-electron-mobility transistor and Voltage in the investigation of issues within Optoelectronics. Many of his studies involve connections with topics such as CMOS and Transistor.
His Annealing study combines topics in areas such as Electrode and Analytical chemistry. The study incorporates disciplines such as Gate dielectric, Equivalent oxide thickness and X-ray photoelectron spectroscopy in addition to Dielectric. Many of his studies on High-κ dielectric apply to Silicon as well.
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NiSi salicide technology for scaled CMOS
Hiroshi Iwai;Tatsuya Ohguro;Shun-ichiro Ohmi.
Microelectronic Engineering (2002)
On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors
Hei Wong;Hei Wong;Hiroshi Iwai.
Microelectronic Engineering (2006)
Roadmap for 22nm and beyond (Invited Paper)
Microelectronic Engineering (2009)
Characterization of La2O3 and Yb2O3 thin films for high-k gate insulator application
S. Ohmi;C. Kobayashi;I. Kashiwagi;C. Ohshima.
Journal of The Electrochemical Society (2003)
Advanced gate dielectric materials for sub-100 nm CMOS
H. Iwai;S. Ohmi;S. Akama;C. Ohshima.
international electron devices meeting (2002)
Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide
H.S. Momose;S.-I. Nakamura;T. Ohguro;T. Yoshitomi.
IEEE Transactions on Electron Devices (1998)
Future perspective and scaling down roadmap for RF CMOS
E. Morifuji;H.S. Momose;T. Ohguro;T. Yoshitomi.
symposium on vlsi technology (1999)
Silicon integrated circuit technology from past to future
Hiroshi Iwai;Shu N.ichiro Ohmi.
Microelectronics Reliability (2002)
Composition, chemical structure, and electronic band structure of rare earth Oxide/Si(100) interfacial transition layer
T. Hattori;T. Yoshida;T. Shiraishi;K. Takahashi.
Microelectronic Engineering (2004)
Future of nano CMOS technology
Solid-state Electronics (2015)
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