World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
64
Citations
17285
World Ranking
1285
National Ranking
37

Research.com Recognitions

  • 1997 - IEEE Fellow For contributions to ultra-small geometry CMOS BiCMOS devices.

Overview

Hiroshi Iwai is affiliated with the Tokyo Institute of Technology in Japan and has a substantial body of work centered on materials science and engineering. Their research primarily focuses on materials chemistry, electrical and electronic engineering, and catalysis.

Their main research topics include advancements in solid oxide fuel cells, fuel cells and related materials, catalytic processes in materials science, catalysis and oxidation reactions, electrocatalysts for energy conversion, electronic and structural properties of oxides, and the application of machine learning in materials science.

Notable recent publications by Iwai include:

  • Development of 1 kW-class Ammonia-fueled Solid Oxide Fuel Cell Stack, 2020, Fuel Cells
  • Microextrusion printing for increasing electrode-electrolyte interface in anode-supported solid oxide fuel cells, 2020, Journal of Power Sources
  • A microstructure-oriented mathematical model of a direct internal reforming solid oxide fuel cell, 2020, Energy Conversion and Management
  • Experimental investigation of temperature distribution of planar solid oxide fuel cell: Effects of gas flow, power generation, and direct internal reforming, 2020, International Journal of Hydrogen Energy
  • Mechanism of improved electrochemical performance of anode-supported solid oxide fuel cells by mesostructural modification of electrode-electrolyte interface, 2021, Journal of Power Sources

Their frequent coauthors are:

  • Masashi Kishimoto
  • Hideo Yoshida
  • Haewon Seo
  • Yuting Guo
  • Grzegorz Brus

Hiroshi Iwai's publications predominantly appear in the following venues:

  • Journal of Power Sources
  • The Proceedings of the Thermal Engineering Conference
  • International Journal of Hydrogen Energy
  • Doryoku, Enerugi Gijutsu Shinpojiumu koen ronbunshu/Doryoku, enerugi gijutsu no saizensen koen ronbunshu
  • ECS Meeting Abstracts

Iwai's work spans 61 publications in materials science and 37 in engineering, with specific subfields including 59 publications in materials chemistry, 20 in electrical and electronic engineering, 11 in catalysis, 8 in renewable energy, sustainability and the environment, and 5 in biomedical engineering.

Among their recognitions is the IEEE Fellow award received in 1997 for contributions to ultra-small geometry CMOS BiCMOS devices.

Best Publications

  • NiSi salicide technology for scaled CMOS

    Hiroshi Iwai;Tatsuya Ohguro;Shun-ichiro Ohmi

  • On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

    Hei Wong;Hei Wong;Hiroshi Iwai

  • 1.5 nm direct-tunneling gate oxide Si MOSFET's

    H. Sasaki;M. Ono;T. Yoshitomi;T. Ohguro

  • Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI

    T. Morimoto;T. Ohguro;S. Momose;T. Iinuma

  • Roadmap for 22nm and beyond (Invited Paper)

    H. Iwai

  • Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films

    T. Ohguro;S. Nakamura;M. Koike;T. Morimoto

  • Characterization of La2O3 and Yb2O3 thin films for high-k gate insulator application

    S. Ohmi;C. Kobayashi;I. Kashiwagi;C. Ohshima

  • Scaling the MOS transistor below 0.1 /spl mu/m: methodology, device structures, and technology requirements

    C. Fiegna;H. Iwai;T. Wada;M. Saito

  • CMOS technology-year 2010 and beyond

    Unknown

  • Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions

    M. Ono;M. Saito;T. Yoshitomi;C. Fiegna

  • A 40 nm gate length n-MOSFET

    M. Ono;M. Saito;T. Yoshitomi;C. Fiegna

  • Advanced gate dielectric materials for sub-100 nm CMOS

    H. Iwai;S. Ohmi;S. Akama;C. Ohshima

  • Silicon integrated circuit technology from past to future

    Hiroshi Iwai;Shu N.ichiro Ohmi

  • Future of nano CMOS technology

    Hiroshi Iwai

  • Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide

    H.S. Momose;S.-I. Nakamura;T. Ohguro;T. Yoshitomi

  • Future perspective and scaling down roadmap for RF CMOS

    E. Morifuji;H.S. Momose;T. Ohguro;T. Yoshitomi

  • A new charge pumping method for determining the spatial distribution of hot-carrier-induced fixed charge in p-MOSFETs

    M. Tsuchiaki;H. Hara;T. Morimoto;H. Iwai

  • Composition, chemical structure, and electronic band structure of rare earth Oxide/Si(100) interfacial transition layer

    T. Hattori;T. Yoshida;T. Shiraishi;K. Takahashi

  • Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETs

    H.S. Momose;M. Ono;T. Yoshitomi;T. Ohguro

  • A NiSi salicide technology for advanced logic devices

    T. Morimoto;H.S. Momose;T. Iinuma;I. Kunishima

  • High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs

    H.S. Momose;E. Morifuji;T. Yoshitomi;I. Saito

Frequent Co-Authors

Hei Wong
Hei Wong City University of Hong Kong
Kenji Shiraishi
Kenji Shiraishi Nagoya University
Enrique Miranda
Enrique Miranda Autonomous University of Barcelona
Robert W. Dutton
Robert W. Dutton Stanford University
Toshiro Hiramoto
Toshiro Hiramoto University of Tokyo
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Toyohiro Chikyow
Toyohiro Chikyow National Institute for Materials Science
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Yoshio Nishi
Yoshio Nishi Stanford University
Naoto Umezawa
Naoto Umezawa Samsung (South Korea)

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