World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
69
Citations
14938
World Ranking
977
National Ranking
415

Robert W. Dutton publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Robert W. Dutton sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 553 publications — 88th percentile

88% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Robert W. Dutton D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Robert W. Dutton sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 69 D-Index — 86th percentile

86% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2016 - ASM Fellow "For outstanding scientific and engineering achievements in the processing of metallic and composite materials, and for national leadership in the development of integrated computational materials science and engineering."
  • 2005 - Semiconductor Industry Association University Researcher Award
  • 1991 - Member of the National Academy of Engineering For pioneering contributions to the development of computer-aided modeling of semiconductor devices and fabrication processes.
  • 1988 - Fellow of John Simon Guggenheim Memorial Foundation
  • 1984 - IEEE Fellow For contributions to computer-aided modeling of silicon devices and fabrication processes.

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electrical engineering
  • Semiconductor

His primary areas of investigation include Electronic engineering, Optoelectronics, Electrical engineering, Silicon and Transistor. The study incorporates disciplines such as Numerical analysis and Transient in addition to Electronic engineering. His Optoelectronics research incorporates elements of Capacitance, Electronic circuit and Gate oxide.

Robert W. Dutton has researched Silicon in several fields, including Inorganic chemistry, Ion implantation, Oxide and Thermal diffusivity. His study in Transistor is interdisciplinary in nature, drawing from both Parasitic capacitance, Electrophoresis and Network analysis. His Semiconductor device modeling research is multidisciplinary, incorporating perspectives in Equivalent circuit, Semiconductor device and Circuit design.

His most cited work include:

  • A charge-oriented model for MOS transistor capacitances (341 citations)
  • VLSI Process modeling—SUPREM III (209 citations)
  • Electrostatic micromechanical actuator with extended range of travel (197 citations)

What are the main themes of his work throughout his whole career to date?

Robert W. Dutton spends much of his time researching Electronic engineering, Optoelectronics, Electrical engineering, MOSFET and Transistor. His Electronic engineering study combines topics in areas such as Equivalent circuit, Electronic circuit and Integrated circuit. His studies in Optoelectronics integrate themes in fields like Capacitance, Substrate and Voltage.

His Electrical engineering research includes elements of Parasitic capacitance and Silicon on insulator. His research in Transistor is mostly focused on NMOS logic. His Silicon research is multidisciplinary, incorporating elements of Oxide and Condensed matter physics.

He most often published in these fields:

  • Electronic engineering (37.73%)
  • Optoelectronics (26.77%)
  • Electrical engineering (17.47%)

What were the highlights of his more recent work (between 2004-2016)?

  • Electronic engineering (37.73%)
  • Optoelectronics (26.77%)
  • Nanotechnology (5.39%)

In recent papers he was focusing on the following fields of study:

Robert W. Dutton mainly focuses on Electronic engineering, Optoelectronics, Nanotechnology, Electrical engineering and Electrostatic discharge. His Electronic engineering research includes themes of Electronic circuit, RF power amplifier and Integrated circuit. His work in Optoelectronics tackles topics such as Optics which are related to areas like Finite difference method.

His research on Electrical engineering often connects related topics like Characterization. His study on Electrostatic discharge also encompasses disciplines like

  • Silicon on insulator which intersects with area such as Capacitance and Thermal,
  • Logic gate, which have a strong connection to Robustness. His biological study spans a wide range of topics, including Field-effect transistor, Noise, Electrostatics and Metal gate.

Between 2004 and 2016, his most popular works were:

  • Minimum achievable phase noise of RC oscillators (121 citations)
  • Impact of Scaling on Analog Performance and Associated Modeling Needs (102 citations)
  • Model dispersive media in finite-difference time-domain method with complex-conjugate pole-residue pairs (76 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electrical engineering
  • Semiconductor

His primary scientific interests are in Electronic engineering, Condensed matter physics, Optoelectronics, Chemical physics and Nanotechnology. His study in Electronic engineering focuses on Integrated circuit design in particular. His work investigates the relationship between Condensed matter physics and topics such as Silicon that intersect with problems in Phonon, Thermal conductivity, Joule heating and Ballistic conduction.

His Optoelectronics research incorporates themes from Microfluidics, Mode-locking, Laser linewidth and Optics. Robert W. Dutton interconnects Field effect, Biomolecule, Charge, Electrostatics and Aqueous solution in the investigation of issues within Chemical physics. His Nanotechnology study integrates concerns from other disciplines, such as Field, Radius and Electrode.

Best Publications

  • A charge-oriented model for MOS transistor capacitances

    D.E. Ward;R.W. Dutton

  • VLSI Process modeling—SUPREM III

    C.P. Ho;J.D. Plummer;S.E. Hansen;R.W. Dutton

  • Transient analysis of MOS transistors

    Soo-Young Oh;D.E. Ward;R.W. Dutton

  • Electrostatic micromechanical actuator with extended range of travel

    E.K. Chan;R.W. Dutton

  • Analytic band Monte Carlo model for electron transport in Si including acoustic and optical phonon dispersion

    Eric Pop;Robert W. Dutton;Kenneth E. Goodson

  • Comprehensive study of noise processes in electrode electrolyte interfaces

    Arjang Hassibi;Reza Navid;Robert W. Dutton;Thomas H. Lee

  • An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects

    D. Chen;E.C. Kan;U. Ravaioli;C.-W. Shu

  • Models for computer simulation of complete IC fabrication process

    D.A. Antoniadis;R.W. Dutton

  • Nonplanar VLSI Device Analysis Using the Solution of Poisson's Equation

    J.A. Greenfield;R.W. Dutton

  • A noise optimization technique for integrated low-noise amplifiers

    Jung-Suk Goo;Hee-Tae Ahn;D.J. Ladwig;Zhiping Yu

  • Impact of gate direct tunneling current on circuit performance: a simulation study

    Chang-Hoon Choi;Ki-Young Nam;Zhiping Yu;R.W. Dutton

  • Minimum achievable phase noise of RC oscillators

    R. Navid;T.H. Lee;R.W. Dutton

  • Characterization of contact electromechanics through capacitance-voltage measurements and simulations

    E.K. Chan;K. Garikipati;R.W. Dutton

  • Iterative Methods in Semiconductor Device Simulation

    C.S. Rafferty;M.R. Pinto;R.W. Dutton

  • Boron in Near‐Intrinsic and Silicon under Inert and Oxidizing Ambients—Diffusion and Segregation

    Dimitri A. Antoniadis;Adalberto G. Gonzalez;Robert W. Dutton

  • Impact of Scaling on Analog Performance and Associated Modeling Needs

    B. Murmann;P. Nikaeen;D.J. Connelly;R.W. Dutton

  • Metastability of CMOS latch/flip-flop

    L.-S. Kim;R.W. Dutton

  • Method for sensitivity analysis of photonic crystal devices.

    Georgios Veronis;Robert W. Dutton;Shanhui Fan

  • The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si ‐ SiO Interface during Thermal Oxidation of Silicon

    A. Miin‐Ron Lin;Robert W. Dutton;Dimitri A. Antoniadis;William A. Tiller

  • Diffusion of arsenic in polycrystalline silicon

    B. Swaminathan;K. C. Saraswat;R. W. Dutton;T. I. Kamins

  • Current transport mechanisms in atomically abrupt metal-semiconductor interfaces

    K. Shenai;R.W. Dutton

Frequent Co-Authors

Thomas H. Lee
Thomas H. Lee Stanford University
Edwin C. Kan
Edwin C. Kan Cornell University
Kaustav Banerjee
Kaustav Banerjee University of California, Santa Barbara
Krishna C. Saraswat
Krishna C. Saraswat Stanford University
Ronald W. Davis
Ronald W. Davis Stanford University
Kenneth E. Goodson
Kenneth E. Goodson Stanford University
James D. Plummer
James D. Plummer Stanford University
Eric Pop
Eric Pop Stanford University
James D. Meindl
James D. Meindl Georgia Institute of Technology

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