World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
69
Citations
14938
World Ranking
977
National Ranking
414

Research.com Recognitions

  • 2016 - ASM Fellow "For outstanding scientific and engineering achievements in the processing of metallic and composite materials, and for national leadership in the development of integrated computational materials science and engineering."
  • 2005 - Semiconductor Industry Association University Researcher Award
  • 1991 - Member of the National Academy of Engineering For pioneering contributions to the development of computer-aided modeling of semiconductor devices and fabrication processes.
  • 1988 - Fellow of John Simon Guggenheim Memorial Foundation
  • 1984 - IEEE Fellow For contributions to computer-aided modeling of silicon devices and fabrication processes.

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electrical engineering
  • Semiconductor

His primary areas of investigation include Electronic engineering, Optoelectronics, Electrical engineering, Silicon and Transistor. The study incorporates disciplines such as Numerical analysis and Transient in addition to Electronic engineering. His Optoelectronics research incorporates elements of Capacitance, Electronic circuit and Gate oxide.

Robert W. Dutton has researched Silicon in several fields, including Inorganic chemistry, Ion implantation, Oxide and Thermal diffusivity. His study in Transistor is interdisciplinary in nature, drawing from both Parasitic capacitance, Electrophoresis and Network analysis. His Semiconductor device modeling research is multidisciplinary, incorporating perspectives in Equivalent circuit, Semiconductor device and Circuit design.

His most cited work include:

  • A charge-oriented model for MOS transistor capacitances (341 citations)
  • VLSI Process modeling—SUPREM III (209 citations)
  • Electrostatic micromechanical actuator with extended range of travel (197 citations)

What are the main themes of his work throughout his whole career to date?

Robert W. Dutton spends much of his time researching Electronic engineering, Optoelectronics, Electrical engineering, MOSFET and Transistor. His Electronic engineering study combines topics in areas such as Equivalent circuit, Electronic circuit and Integrated circuit. His studies in Optoelectronics integrate themes in fields like Capacitance, Substrate and Voltage.

His Electrical engineering research includes elements of Parasitic capacitance and Silicon on insulator. His research in Transistor is mostly focused on NMOS logic. His Silicon research is multidisciplinary, incorporating elements of Oxide and Condensed matter physics.

He most often published in these fields:

  • Electronic engineering (37.73%)
  • Optoelectronics (26.77%)
  • Electrical engineering (17.47%)

What were the highlights of his more recent work (between 2004-2016)?

  • Electronic engineering (37.73%)
  • Optoelectronics (26.77%)
  • Nanotechnology (5.39%)

In recent papers he was focusing on the following fields of study:

Robert W. Dutton mainly focuses on Electronic engineering, Optoelectronics, Nanotechnology, Electrical engineering and Electrostatic discharge. His Electronic engineering research includes themes of Electronic circuit, RF power amplifier and Integrated circuit. His work in Optoelectronics tackles topics such as Optics which are related to areas like Finite difference method.

His research on Electrical engineering often connects related topics like Characterization. His study on Electrostatic discharge also encompasses disciplines like

  • Silicon on insulator which intersects with area such as Capacitance and Thermal,
  • Logic gate, which have a strong connection to Robustness. His biological study spans a wide range of topics, including Field-effect transistor, Noise, Electrostatics and Metal gate.

Between 2004 and 2016, his most popular works were:

  • Minimum achievable phase noise of RC oscillators (121 citations)
  • Impact of Scaling on Analog Performance and Associated Modeling Needs (102 citations)
  • Model dispersive media in finite-difference time-domain method with complex-conjugate pole-residue pairs (76 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electrical engineering
  • Semiconductor

His primary scientific interests are in Electronic engineering, Condensed matter physics, Optoelectronics, Chemical physics and Nanotechnology. His study in Electronic engineering focuses on Integrated circuit design in particular. His work investigates the relationship between Condensed matter physics and topics such as Silicon that intersect with problems in Phonon, Thermal conductivity, Joule heating and Ballistic conduction.

His Optoelectronics research incorporates themes from Microfluidics, Mode-locking, Laser linewidth and Optics. Robert W. Dutton interconnects Field effect, Biomolecule, Charge, Electrostatics and Aqueous solution in the investigation of issues within Chemical physics. His Nanotechnology study integrates concerns from other disciplines, such as Field, Radius and Electrode.

Best Publications

  • A charge-oriented model for MOS transistor capacitances

    D.E. Ward;R.W. Dutton

  • VLSI Process modeling—SUPREM III

    C.P. Ho;J.D. Plummer;S.E. Hansen;R.W. Dutton

  • Transient analysis of MOS transistors

    Soo-Young Oh;D.E. Ward;R.W. Dutton

  • Electrostatic micromechanical actuator with extended range of travel

    E.K. Chan;R.W. Dutton

  • Analytic band Monte Carlo model for electron transport in Si including acoustic and optical phonon dispersion

    Eric Pop;Robert W. Dutton;Kenneth E. Goodson

  • Comprehensive study of noise processes in electrode electrolyte interfaces

    Arjang Hassibi;Reza Navid;Robert W. Dutton;Thomas H. Lee

  • An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects

    D. Chen;E.C. Kan;U. Ravaioli;C.-W. Shu

  • Models for computer simulation of complete IC fabrication process

    D.A. Antoniadis;R.W. Dutton

  • Nonplanar VLSI Device Analysis Using the Solution of Poisson's Equation

    J.A. Greenfield;R.W. Dutton

  • A noise optimization technique for integrated low-noise amplifiers

    Jung-Suk Goo;Hee-Tae Ahn;D.J. Ladwig;Zhiping Yu

  • Impact of gate direct tunneling current on circuit performance: a simulation study

    Chang-Hoon Choi;Ki-Young Nam;Zhiping Yu;R.W. Dutton

  • Minimum achievable phase noise of RC oscillators

    R. Navid;T.H. Lee;R.W. Dutton

  • Characterization of contact electromechanics through capacitance-voltage measurements and simulations

    E.K. Chan;K. Garikipati;R.W. Dutton

  • Iterative Methods in Semiconductor Device Simulation

    C.S. Rafferty;M.R. Pinto;R.W. Dutton

  • Boron in Near‐Intrinsic and Silicon under Inert and Oxidizing Ambients—Diffusion and Segregation

    Dimitri A. Antoniadis;Adalberto G. Gonzalez;Robert W. Dutton

  • Impact of Scaling on Analog Performance and Associated Modeling Needs

    B. Murmann;P. Nikaeen;D.J. Connelly;R.W. Dutton

  • Metastability of CMOS latch/flip-flop

    L.-S. Kim;R.W. Dutton

  • Method for sensitivity analysis of photonic crystal devices.

    Georgios Veronis;Robert W. Dutton;Shanhui Fan

  • The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si ‐ SiO Interface during Thermal Oxidation of Silicon

    A. Miin‐Ron Lin;Robert W. Dutton;Dimitri A. Antoniadis;William A. Tiller

  • Diffusion of arsenic in polycrystalline silicon

    B. Swaminathan;K. C. Saraswat;R. W. Dutton;T. I. Kamins

  • Current transport mechanisms in atomically abrupt metal-semiconductor interfaces

    K. Shenai;R.W. Dutton

Frequent Co-Authors

Thomas H. Lee
Thomas H. Lee Stanford University
Kaustav Banerjee
Kaustav Banerjee University of California, Santa Barbara
Krishna C. Saraswat
Krishna C. Saraswat Stanford University
Ronald W. Davis
Ronald W. Davis Stanford University
James D. Plummer
James D. Plummer Stanford University
Kenneth E. Goodson
Kenneth E. Goodson Stanford University
Eric Pop
Eric Pop Stanford University
James D. Meindl
James D. Meindl Georgia Institute of Technology
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology

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