Tor A. Fjeldly

Research.com Recognitions

• 2000 - IEEE Fellow For contributions to semiconductor device modeling and the development of AIM spice.

Overview

Best Publications

• Semiconductor Device Modeling For VLSI

  Kwyro Lee;Michael Shur;Tor A. Fjeldly;Trond Ytterdal

  354
  Citations

• Conducting laboratory experiments over the Internet

  Hong Shen;Zheng Xu;B. Dalager;V. Kristiansen

  311
  Citations

• A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices

  S. Khandelwal;N. Goyal;T. A. Fjeldly

  253
  Citations

• Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETs

  T.A. Fjeldly;M. Shur

  212
  Citations

• Introduction to Device Modeling and Circuit Simulation

  Tor A. Fjeldly;Michael Shur;Trond Ytterdal

  201
  Citations

• Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

  S. Khandelwal;Y. S. Chauhan;T. A. Fjeldly

  187
  Citations

• Device Modeling for Analog and RF CMOS Circuit Design

  Trond Ytterdal;Yuhua Cheng;Tor A. Fjeldly

  168
  Citations

• A physics based compact model of I–V and C–V characteristics in AlGaN/GaN HEMT devices

  Sourabh Khandelwal;T.A. Fjeldly

  152
  Citations

• Device Modeling for Analog and RF CMOS Circuit Design: Ytterdal/Device

  Trond Ytterdal;Yuhua Cheng;Tor A. Fjeldly

  149
  Citations

• Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

  Sourabh Khandelwal;Chandan Yadav;Shantanu Agnihotri;Yogesh Singh Chauhan

  146
  Citations

• ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model

  Sourabh Khandelwal;Yogesh Singh Chauhan;Tor A. Fjeldly;Sudip Ghosh

  142
  Citations

• Compact-Modeling Solutions For Nanoscale Double-Gate and Gate-All-Around MOSFETs

  B. Iniguez;T.A. Fjeldly;A. Lazaro;F. Danneville

  134
  Citations

• Unified MOSFET model

  M. Shur;T.A. Fjeldly;T.A. Fjeldly;T. Ytterdal;K. Lee

  116
  Citations

• Interaction between electronic and vibronic Raman scattering in heavily doped silicon

  Fernando Cerdeira;Tor A. Fjeldly;Manuel Cardona

  113
  Citations

• Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs

  Fetene Mulugeta Yigletu;Sourabh Khandelwal;Tor A. Fjeldly;Benjamin Iniguez

  112
  Citations

• Scattering rates for holes near the valence-band edge in semiconductors

  T. Brudevoll;T. A. Fjeldly;J. Baek;M. S. Shur

  109
  Citations

• Raman study of the interaction between localized vibrations and electronic excitations in boron-doped silicon

  F. Cerdeira;T. A. Fjeldly;M. Cardona

  94
  Citations

• Approximate analytical solution of generalized diode equation

  T.A. Fjeldly;B.-J. Moon;M. Shur

  93
  Citations

• Unified model for short-channel poly-Si TFTs

  Benjamı́n Iñiguez;Zheng Xu;Tor A. Fjeldly;Tor A. Fjeldly;Michael S. Shur

  88
  Citations

• Self-heating and kink effects in a-Si:H thin film transistors

  Ling Wang;T.A. Fjeldly;B. Iniguez;H.C. Slade

  85
  Citations

• Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications

  R. Gaska;M. S. Shur;T. A. Fjeldly;A. D. Bykhovski

  85
  Citations