R. Gaska mainly investigates Optoelectronics, Wide-bandgap semiconductor, Heterojunction, Field-effect transistor and Transistor. His Optoelectronics research is mostly focused on the topic Light-emitting diode. His Wide-bandgap semiconductor study combines topics in areas such as Metalorganic vapour phase epitaxy, Semiconductor, Quantum well, Photoluminescence and Nitride.
The study incorporates disciplines such as Electron mobility, Doping, Voltage, Electron density and Microwave in addition to Heterojunction. His research in Field-effect transistor intersects with topics in Algan gan, Terahertz radiation, Threshold voltage, Biasing and MOSFET. He has researched Transistor in several fields, including Radio frequency and Wafer.
His primary areas of study are Optoelectronics, Wide-bandgap semiconductor, Heterojunction, Photoluminescence and Field-effect transistor. His work deals with themes such as Gallium nitride, Transistor, Sapphire and Optics, which intersect with Optoelectronics. R. Gaska combines subjects such as Metalorganic vapour phase epitaxy, Spectroscopy, Semiconductor, MOSFET and Electron with his study of Wide-bandgap semiconductor.
In Heterojunction, he works on issues like Doping, which are connected to Electron density. His Photoluminescence study combines topics from a wide range of disciplines, such as Exciton, Condensed matter physics, Carrier lifetime, Quantum well and Excitation. R. Gaska has included themes like Algan gan, Current and Noise in his Field-effect transistor study.
R. Gaska mostly deals with Optoelectronics, Photoluminescence, Wide-bandgap semiconductor, Heterojunction and Spectroscopy. His research on Optoelectronics frequently connects to adjacent areas such as Monolithic microwave integrated circuit. The various areas that R. Gaska examines in his Photoluminescence study include Quantum well, Condensed matter physics and Epitaxy.
His Wide-bandgap semiconductor research incorporates elements of Electron mobility and Doping. He studied Heterojunction and Contact resistance that intersect with Heterostructure field effect transistors, Algan gan and Electron. R. Gaska interconnects Molecular physics and Band gap in the investigation of issues within Spectroscopy.
His scientific interests lie mostly in Photoluminescence, Wide-bandgap semiconductor, Optoelectronics, Spectroscopy and Stimulated emission. In his research on the topic of Photoluminescence, Photoexcitation is strongly related with Condensed matter physics. As part of his studies on Wide-bandgap semiconductor, R. Gaska frequently links adjacent subjects like Heterojunction.
His research brings together the fields of Power density and Optoelectronics. His Spectroscopy research includes elements of Near-field scanning optical microscope, Band gap and Analytical chemistry. Within one scientific family, he focuses on topics pertaining to Quantum well under Stimulated emission, and may sometimes address concerns connected to Atomic physics.
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Nonresonant Detection of Terahertz Radiation in Field Effect Transistors
W. Knap;V. Kachorovskii;Y. Deng;S. Rumyantsev.
Journal of Applied Physics (2002)
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
M. Asif Khan;X. Hu;A. Tarakji;Grigory Simin.
Applied Physics Letters (2000)
Si 3 N 4 /AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors
X. Hu;A. Koudymov;Grigory Simin;J. Yang.
Applied Physics Letters (2001)
Self-heating in high-power AlGaN-GaN HFETs
R. Gaska;A. Osinsky;J.W. Yang;M.S. Shur.
IEEE Electron Device Letters (1998)
Deep-Ultraviolet Light-Emitting Diodes
M.S. Shur;R. Gaska.
IEEE Transactions on Electron Devices (2010)
Low noise p-π-n GaN ultraviolet photodetectors
A. Osinsky;S. Gangopadhyay;R. Gaska;B. Williams.
Applied Physics Letters (1997)
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
R. Gaska;J. W. Yang;A. Osinsky;Q. Chen.
Applied Physics Letters (1998)
High-temperature performance of AlGaN/GaN HFETs on SiC substrates
R. Gaska;Q. Chen;J. Yang;A. Osinsky.
IEEE Electron Device Letters (1997)
Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate
X. Hu;G. Simin;J. Yang;M. Asif Khan.
Electronics Letters (2000)
Electron mobility in modulation-doped AlGaN-GaN heterostructures
R. Gaska;M. S. Shur;A. D. Bykhovski;A. O. Orlov.
Applied Physics Letters (1999)
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