World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
65
Citations
12672
World Ranking
1243
National Ranking
507

Materials Science

D-Index
65
Citations
12768
World Ranking
5725
National Ranking
1478

Overview

Remis Gaska is affiliated with UVTON, Inc. in the United States. Their professional focus and research contributions are connected to this institution.

There are no recorded recent papers, co-authors, or frequent publication venues available for Remis Gaska. Likewise, information regarding book publications, main fields and subfields of study, and main research topics has not been documented.

No awards have been reported in relation to Remis Gaska.

Best Publications

  • AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

    Max Shatalov;Wenhong Sun;Alex Lunev;Xuhong Hu

  • Nonresonant Detection of Terahertz Radiation in Field Effect Transistors

    W. Knap;V. Kachorovskii;Y. Deng;S. Rumyantsev

  • Self-heating in high-power AlGaN-GaN HFETs

    R. Gaska;A. Osinsky;J.W. Yang;M.S. Shur

  • Si 3 N 4 /AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

    X. Hu;A. Koudymov;Grigory Simin;J. Yang

  • Deep-Ultraviolet Light-Emitting Diodes

    M.S. Shur;R. Gaska

  • Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate

    X. Hu;G. Simin;J. Yang;M. Asif Khan

  • Visible-blind GaN Schottky barrier detectors grown on Si(111)

    A. Osinsky;S. Gangopadhyay;J. W. Yang;R. Gaska

  • Optimization of white polychromatic semiconductor lamps

    A. Žukauskas;R. Vaicekauskas;F. Ivanauskas;R. Gaska

  • High power AlGaN ultraviolet light emitters

    Max Shatalov;Wenhong Sun;Rakesh Jain;Alex Lunev

  • Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures

    A. V. Muravjov;D. B. Veksler;V. V. Popov;O. V. Polischuk

  • Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates

    J. W. Yang;A. Lunev;Grigory Simin;A. Chitnis

  • Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

    Grigory Simin;A. Koudymov;A. Tarakji;X. Hu

  • AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor

    Grigory Simin;Xuhong Hu;Ahmad Tarakji;Jianping Zhang

  • AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA

    J. P. Zhang;X. Hu;Yu. Bilenko;J. Deng

  • AlGaN Deep-Ultraviolet Light-Emitting Diodes

    Jianping Zhang;Xuhong Hu;Alex Lunev;Jianyu Deng

  • TEMPERATURE DEPENDENCE OF IMPACT IONIZATION IN ALGAN-GAN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS

    N. Dyakonova;A. Dickens;M. S. Shur;R. Gaska

  • SiO 2 -Passivated Lateral-Geometry GaN Transparent Schottky-Barrier Detectors

    V. Adivarahan;G. Simin;J. W. Yang;A. Lunev

  • SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs

    G. Simin;A. Koudymov;H. Fatima;Jianping Zhang

  • Terahertz detection by GaN/AlGaN transistors

    A. El Fatimy;S. Boubanga Tombet;F. Teppe;W. Knap

  • Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power

    W. Sun;M. Shatalov;J. Deng;X. Hu

Frequent Co-Authors

Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Grigory Simin
Grigory Simin University of South Carolina
M. Asif Khan
M. Asif Khan University of South Carolina
M.A. Khan
M.A. Khan University of South Carolina
Sergey Rumyantsev
Sergey Rumyantsev University of California, Riverside
Nezih Pala
Nezih Pala Florida International University
Vinod Adivarahan
Vinod Adivarahan Nitek (United States)
Xiaobo Sharon Hu
Xiaobo Sharon Hu University of Notre Dame
Michael Wraback
Michael Wraback United States Army Research Laboratory
Andrei Osinsky
Andrei Osinsky Corning (United States)

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Best Scientists Citing Remis Gaska