D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 53 Citations 7,119 229 World Ranking 1539 National Ranking 691
Materials Science D-index 54 Citations 7,195 233 World Ranking 6091 National Ranking 1674

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electron

R. Gaska mainly investigates Optoelectronics, Wide-bandgap semiconductor, Heterojunction, Field-effect transistor and Transistor. His Optoelectronics research is mostly focused on the topic Light-emitting diode. His Wide-bandgap semiconductor study combines topics in areas such as Metalorganic vapour phase epitaxy, Semiconductor, Quantum well, Photoluminescence and Nitride.

The study incorporates disciplines such as Electron mobility, Doping, Voltage, Electron density and Microwave in addition to Heterojunction. His research in Field-effect transistor intersects with topics in Algan gan, Terahertz radiation, Threshold voltage, Biasing and MOSFET. He has researched Transistor in several fields, including Radio frequency and Wafer.

His most cited work include:

  • Nonresonant Detection of Terahertz Radiation in Field Effect Transistors (329 citations)
  • AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates (324 citations)
  • Self-heating in high-power AlGaN-GaN HFETs (247 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of study are Optoelectronics, Wide-bandgap semiconductor, Heterojunction, Photoluminescence and Field-effect transistor. His work deals with themes such as Gallium nitride, Transistor, Sapphire and Optics, which intersect with Optoelectronics. R. Gaska combines subjects such as Metalorganic vapour phase epitaxy, Spectroscopy, Semiconductor, MOSFET and Electron with his study of Wide-bandgap semiconductor.

In Heterojunction, he works on issues like Doping, which are connected to Electron density. His Photoluminescence study combines topics from a wide range of disciplines, such as Exciton, Condensed matter physics, Carrier lifetime, Quantum well and Excitation. R. Gaska has included themes like Algan gan, Current and Noise in his Field-effect transistor study.

He most often published in these fields:

  • Optoelectronics (79.15%)
  • Wide-bandgap semiconductor (38.61%)
  • Heterojunction (27.03%)

What were the highlights of his more recent work (between 2010-2016)?

  • Optoelectronics (79.15%)
  • Photoluminescence (21.62%)
  • Wide-bandgap semiconductor (38.61%)

In recent papers he was focusing on the following fields of study:

R. Gaska mostly deals with Optoelectronics, Photoluminescence, Wide-bandgap semiconductor, Heterojunction and Spectroscopy. His research on Optoelectronics frequently connects to adjacent areas such as Monolithic microwave integrated circuit. The various areas that R. Gaska examines in his Photoluminescence study include Quantum well, Condensed matter physics and Epitaxy.

His Wide-bandgap semiconductor research incorporates elements of Electron mobility and Doping. He studied Heterojunction and Contact resistance that intersect with Heterostructure field effect transistors, Algan gan and Electron. R. Gaska interconnects Molecular physics and Band gap in the investigation of issues within Spectroscopy.

Between 2010 and 2016, his most popular works were:

  • Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy (47 citations)
  • Internal quantum efficiency in AlGaN with strong carrier localization (45 citations)
  • Correlation between carrier localization and efficiency droop in AlGaN epilayers (38 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electron

His scientific interests lie mostly in Photoluminescence, Wide-bandgap semiconductor, Optoelectronics, Spectroscopy and Stimulated emission. In his research on the topic of Photoluminescence, Photoexcitation is strongly related with Condensed matter physics. As part of his studies on Wide-bandgap semiconductor, R. Gaska frequently links adjacent subjects like Heterojunction.

His research brings together the fields of Power density and Optoelectronics. His Spectroscopy research includes elements of Near-field scanning optical microscope, Band gap and Analytical chemistry. Within one scientific family, he focuses on topics pertaining to Quantum well under Stimulated emission, and may sometimes address concerns connected to Atomic physics.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Nonresonant Detection of Terahertz Radiation in Field Effect Transistors

W. Knap;V. Kachorovskii;Y. Deng;S. Rumyantsev.
Journal of Applied Physics (2002)

468 Citations

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

M. Asif Khan;X. Hu;A. Tarakji;Grigory Simin.
Applied Physics Letters (2000)

420 Citations

Si 3 N 4 /AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

X. Hu;A. Koudymov;Grigory Simin;J. Yang.
Applied Physics Letters (2001)

372 Citations

Self-heating in high-power AlGaN-GaN HFETs

R. Gaska;A. Osinsky;J.W. Yang;M.S. Shur.
IEEE Electron Device Letters (1998)

345 Citations

Deep-Ultraviolet Light-Emitting Diodes

M.S. Shur;R. Gaska.
IEEE Transactions on Electron Devices (2010)

333 Citations

Low noise p-π-n GaN ultraviolet photodetectors

A. Osinsky;S. Gangopadhyay;R. Gaska;B. Williams.
Applied Physics Letters (1997)

311 Citations

Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

R. Gaska;J. W. Yang;A. Osinsky;Q. Chen.
Applied Physics Letters (1998)

308 Citations

High-temperature performance of AlGaN/GaN HFETs on SiC substrates

R. Gaska;Q. Chen;J. Yang;A. Osinsky.
IEEE Electron Device Letters (1997)

271 Citations

Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate

X. Hu;G. Simin;J. Yang;M. Asif Khan.
Electronics Letters (2000)

239 Citations

Electron mobility in modulation-doped AlGaN-GaN heterostructures

R. Gaska;M. S. Shur;A. D. Bykhovski;A. O. Orlov.
Applied Physics Letters (1999)

225 Citations

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