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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
54
Citations
10865
World Ranking
2295
National Ranking
894

Overview

Sergey Rumyantsev is affiliated with the University of California, Riverside in the United States. Their research spans multiple fields of study, primarily focusing on physics and engineering.

The main areas of study for Sergey include:

  • Physics and Astronomy
  • Engineering

Their specialization further breaks down into several subfields, including:

  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Pulmonary and Respiratory Medicine
  • Biomedical Engineering

Sergey has contributed to the following main research topics:

  • GaN-based semiconductor devices and materials
  • Radio Frequency Integrated Circuit Design
  • Semiconductor Quantum Structures and Devices
  • Renal cell carcinoma treatment
  • Terahertz technology and applications
  • Plasmonic and Surface Plasmon Research

Their recent publications include:

  • "AlGaN/GaN Distributed Schottky Barrier Single-Pole Single-Throw Millimeter-Wave Switches" (2023) published in IEEE Access
  • "Computed tomography, angiographic and scintigraphic semiotics of diseases of the kidneys and adrenal glands" (2022) published in Kazan Medical Journal
  • "Effect of current on terahertz plasmons in AlGaN/GaN heterostructures" (2025) published in Applied Physics Letters

Sergey has collaborated frequently with several researchers including:

  • Pavlo Sai
  • Paweł Bajurko
  • Jakub Sobolewski
  • Yevhen Yashchyshyn
  • Teodor Narytnyk

Their work has appeared in a range of publication venues with multiple contributions in:

  • IEEE Access
  • Kazan Medical Journal
  • Applied Physics Letters

Best Publications

  • Handbook series on semiconductor parameters

    M Levinshtein;S Rumyantsev;M Shur

  • Nonresonant Detection of Terahertz Radiation in Field Effect Transistors

    W. Knap;V. Kachorovskii;Y. Deng;S. Rumyantsev

  • Selective gas sensing with a single pristine graphene transistor.

    Sergey Rumyantsev;Sergey Rumyantsev;Guanxiong Liu;Michael S. Shur;Radislav A. Potyrailo

  • Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

    R. Tauk;F. Teppe;S. Boubanga;D. Coquillat

  • Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors

    W. Knap;F. Teppe;Y. Meziani;N. Dyakonova

  • Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors

    W. Knap;Y. Deng;S. Rumyantsev;M. S. Shur

  • Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor

    W. Knap;Y. Deng;S. Rumyantsev;J.-Q. Lü

  • Resonant and voltage-tunable terahertz detection in InGaAs /InP nanometer transistors

    A. El Fatimy;F. Teppe;N. Dyakonova;W. Knap

  • Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor

    F. Teppe;W. Knap;D. Veksler;M. S. Shur

  • Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms.

    S Rumyantsev;S Rumyantsev;G Liu;W Stillman;M Shur

  • Low-noise top-gate graphene transistors

    G. Liu;W. Stillman;S. Rumyantsev;Q. Shao

  • Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts

    J. Renteria;R. Samnakay;S. L. Rumyantsev;C. Jiang

  • Flicker Noise in Bilayer Graphene Transistors

    Qinghui Shao;Guanxiong Liu;D. Teweldebrhan;A.A. Balandin

  • Origin of 1/f noise in graphene multilayers: Surface vs. volume

    Guanxiong Liu;Sergey Rumyantsev;Michael S. Shur;Alexander A. Balandin

  • Terahertz detection by GaN/AlGaN transistors

    A. El Fatimy;S. Boubanga Tombet;F. Teppe;W. Knap

  • AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

    M. E. Levinshtein;S. L. Rumyantsev;R. Gaska;J. W. Yang

  • Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor

    F. Teppe;D. Veksler;V. Yu. Kachorovski;A. P. Dmitriev

  • Nanometer size field effect transistors for terahertz detectors

    W Knap;S Rumyantsev;S Rumyantsev;M S Vitiello;D Coquillat

  • Selective Chemical Vapor Sensing with Few-Layer MoS2 Thin-Film Transistors

    R. Samnakay;C. Jiang;S. L. Rumyantsev;M.S. Shur

  • Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications

    Maxim A. Stolyarov;Guanxiong Liu;Matthew A. Bloodgood;Ece Aytan

  • "Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes

    M.E. Levinshtein;T.T. Mnatsakanov;P. Ivanov;J.W. Palmour

Frequent Co-Authors

Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Alexander A. Balandin
Alexander A. Balandin University of California, Los Angeles
Remis Gaska
Remis Gaska UVTON, Inc.
Grigory Simin
Grigory Simin University of South Carolina
Xiaobo Sharon Hu
Xiaobo Sharon Hu University of Notre Dame
M. Asif Khan
M. Asif Khan University of South Carolina
Anant K. Agarwal
Anant K. Agarwal The Ohio State University
M.A. Khan
M.A. Khan University of South Carolina
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Robert Vajtai
Robert Vajtai Rice University

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