World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
54
Citations
10865
World Ranking
2295
National Ranking
895

Sergey Rumyantsev publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sergey Rumyantsev sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 264 publications — 49th percentile

49% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Sergey Rumyantsev D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sergey Rumyantsev sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 54 D-Index — 68th percentile

68% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Sergey Rumyantsev is affiliated with the University of California, Riverside in the United States. Their research spans multiple fields of study, primarily focusing on physics and engineering.

The main areas of study for Sergey include:

  • Physics and Astronomy
  • Engineering

Their specialization further breaks down into several subfields, including:

  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Pulmonary and Respiratory Medicine
  • Biomedical Engineering

Sergey has contributed to the following main research topics:

  • GaN-based semiconductor devices and materials
  • Radio Frequency Integrated Circuit Design
  • Semiconductor Quantum Structures and Devices
  • Renal cell carcinoma treatment
  • Terahertz technology and applications
  • Plasmonic and Surface Plasmon Research

Their recent publications include:

  • "AlGaN/GaN Distributed Schottky Barrier Single-Pole Single-Throw Millimeter-Wave Switches" (2023) published in IEEE Access
  • "Computed tomography, angiographic and scintigraphic semiotics of diseases of the kidneys and adrenal glands" (2022) published in Kazan Medical Journal
  • "Effect of current on terahertz plasmons in AlGaN/GaN heterostructures" (2025) published in Applied Physics Letters

Sergey has collaborated frequently with several researchers including:

  • Pavlo Sai
  • Paweł Bajurko
  • Jakub Sobolewski
  • Yevhen Yashchyshyn
  • Teodor Narytnyk

Their work has appeared in a range of publication venues with multiple contributions in:

  • IEEE Access
  • Kazan Medical Journal
  • Applied Physics Letters

Best Publications

  • Handbook series on semiconductor parameters

    M Levinshtein;S Rumyantsev;M Shur

  • Nonresonant Detection of Terahertz Radiation in Field Effect Transistors

    W. Knap;V. Kachorovskii;Y. Deng;S. Rumyantsev

  • Selective gas sensing with a single pristine graphene transistor.

    Sergey Rumyantsev;Sergey Rumyantsev;Guanxiong Liu;Michael S. Shur;Radislav A. Potyrailo

  • Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

    R. Tauk;F. Teppe;S. Boubanga;D. Coquillat

  • Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors

    W. Knap;F. Teppe;Y. Meziani;N. Dyakonova

  • Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors

    W. Knap;Y. Deng;S. Rumyantsev;M. S. Shur

  • Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor

    W. Knap;Y. Deng;S. Rumyantsev;J.-Q. Lü

  • Resonant and voltage-tunable terahertz detection in InGaAs /InP nanometer transistors

    A. El Fatimy;F. Teppe;N. Dyakonova;W. Knap

  • Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor

    F. Teppe;W. Knap;D. Veksler;M. S. Shur

  • Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms.

    S Rumyantsev;S Rumyantsev;G Liu;W Stillman;M Shur

  • Low-noise top-gate graphene transistors

    G. Liu;W. Stillman;S. Rumyantsev;Q. Shao

  • Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts

    J. Renteria;R. Samnakay;S. L. Rumyantsev;C. Jiang

  • Flicker Noise in Bilayer Graphene Transistors

    Qinghui Shao;Guanxiong Liu;D. Teweldebrhan;A.A. Balandin

  • Origin of 1/f noise in graphene multilayers: Surface vs. volume

    Guanxiong Liu;Sergey Rumyantsev;Michael S. Shur;Alexander A. Balandin

  • Terahertz detection by GaN/AlGaN transistors

    A. El Fatimy;S. Boubanga Tombet;F. Teppe;W. Knap

  • AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

    M. E. Levinshtein;S. L. Rumyantsev;R. Gaska;J. W. Yang

  • Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor

    F. Teppe;D. Veksler;V. Yu. Kachorovski;A. P. Dmitriev

  • Nanometer size field effect transistors for terahertz detectors

    W Knap;S Rumyantsev;S Rumyantsev;M S Vitiello;D Coquillat

  • Selective Chemical Vapor Sensing with Few-Layer MoS2 Thin-Film Transistors

    R. Samnakay;C. Jiang;S. L. Rumyantsev;M.S. Shur

  • Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications

    Maxim A. Stolyarov;Guanxiong Liu;Matthew A. Bloodgood;Ece Aytan

  • "Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes

    M.E. Levinshtein;T.T. Mnatsakanov;P. Ivanov;J.W. Palmour

Frequent Co-Authors

Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Alexander A. Balandin
Alexander A. Balandin University of California, Los Angeles
Nezih Pala
Nezih Pala Florida International University
Remis Gaska
Remis Gaska UVTON, Inc.
Grigory Simin
Grigory Simin University of South Carolina
Xiaobo Sharon Hu
Xiaobo Sharon Hu University of Notre Dame
Wojciech Knap
Wojciech Knap Warsaw University of Technology
M. Asif Khan
M. Asif Khan University of South Carolina
Anant K. Agarwal
Anant K. Agarwal The Ohio State University
M.A. Khan
M.A. Khan University of South Carolina

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