World's Best Scientists 2026 revealed!
Award Badge
Engineering and Technology
Poland
2025

D-Index & Metrics

Engineering and Technology

D-Index
58
Citations
13889
World Ranking
2462
National Ranking
4

Sergey Rumyantsev publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Sergey Rumyantsev sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 322 publications — 80th percentile

80% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Sergey Rumyantsev D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Sergey Rumyantsev sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 58 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Research.com Recognitions

  • 2025 - Research.com Engineering and Technology in Poland Leader Award

Overview

Sergey Rumyantsev is affiliated with the Polish Academy of Sciences in Poland, contributing extensively to multiple fields within science and engineering. Their research spans materials science, engineering, and physics and astronomy, with a significant output across interdisciplinary subfields.

The main fields of study covered in their work include:

  • Materials Science
  • Engineering
  • Physics and Astronomy

Within these broader disciplines, they focus on subfields such as:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Rumyantsev's key research topics highlight the depth of their specialization, including:

  • GaN-based semiconductor devices and materials
  • 2D Materials and Applications
  • Graphene research and applications
  • Gas Sensing Nanomaterials and Sensors
  • Quantum and electron transport phenomena
  • Organic and Molecular Conductors Research
  • Semiconductor Quantum Structures and Devices

Their published works have appeared in several prominent journals and venues with frequent publications in:

  • arXiv (Cornell University)
  • Applied Physics Letters
  • SSRN Electronic Journal
  • Sensors and Actuators B Chemical
  • ACS Sensors

Some recent papers authored by or co-authored with Sergey Rumyantsev include:

  • Electrically Insulating Flexible Films with Quasi-1D van der Waals Fillers as Efficient Electromagnetic Shields in the GHz and Sub-THz Frequency Bands (2021, Advanced Materials)
  • Graphene Epoxy-Based Composites as Efficient Electromagnetic Absorbers in the Extremely High-Frequency Band (2020, ACS Applied Materials & Interfaces)
  • Nature of the 1/f noise in graphene-direct evidence for the mobility fluctuation mechanism (2022, Nanoscale)
  • Effects of UV light irradiation on fluctuation enhanced gas sensing by carbon nanotube networks (2021, Sensors and Actuators B Chemical)
  • The road to the Second Karabakh War: the role of ethno-centric narratives in the Nagorno-Karabakh conflict (2021, Caucasus Survey)

Rumyantsev has collaborated regularly with a number of frequent co-authors, such as:

  • G. Cywiński
  • Alexander A. Balandin
  • W. Knap
  • Adil Rehman
  • Pavlo Sai

Best Publications

  • Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe

    M. E. Levinshteĭn;S. L. Rumyantsev;Michael Shur

  • Handbook series on semiconductor parameters

    M Levinshtein;S Rumyantsev;M Shur

  • Nonresonant Detection of Terahertz Radiation in Field Effect Transistors

    W. Knap;V. Kachorovskii;Y. Deng;S. Rumyantsev

  • Selective gas sensing with a single pristine graphene transistor.

    Sergey Rumyantsev;Sergey Rumyantsev;Guanxiong Liu;Michael S. Shur;Radislav A. Potyrailo

  • Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

    R. Tauk;F. Teppe;S. Boubanga;D. Coquillat

  • Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors

    W. Knap;F. Teppe;Y. Meziani;N. Dyakonova

  • Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors

    W. Knap;Y. Deng;S. Rumyantsev;M. S. Shur

  • Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor

    W. Knap;Y. Deng;S. Rumyantsev;J.-Q. Lü

  • Resonant and voltage-tunable terahertz detection in InGaAs /InP nanometer transistors

    A. El Fatimy;F. Teppe;N. Dyakonova;W. Knap

  • Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor

    F. Teppe;W. Knap;D. Veksler;M. S. Shur

  • Low-frequency electronic noise in the double-gate single-layer graphene transistors

    G. Liu;W. Stillman;S. Rumyantsev;Q. Shao

  • Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms.

    S Rumyantsev;S Rumyantsev;G Liu;W Stillman;M Shur

  • Low-noise top-gate graphene transistors

    G. Liu;W. Stillman;S. Rumyantsev;Q. Shao

  • Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts

    J. Renteria;R. Samnakay;S. L. Rumyantsev;C. Jiang

  • Flicker Noise in Bilayer Graphene Transistors

    Qinghui Shao;Guanxiong Liu;D. Teweldebrhan;A.A. Balandin

  • Origin of 1/f noise in graphene multilayers: Surface vs. volume

    Guanxiong Liu;Sergey Rumyantsev;Michael S. Shur;Alexander A. Balandin

  • Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices

    R. Samnakay;C. Jiang;S. L. Rumyantsev;M. S. Shur

  • Terahertz detection by GaN/AlGaN transistors

    A. El Fatimy;S. Boubanga Tombet;F. Teppe;W. Knap

  • AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

    M. E. Levinshtein;S. L. Rumyantsev;R. Gaska;J. W. Yang

  • SiC materials and devices

    Michael Shur;Sergey Rumyantsev;M. E. Levinshteĭn

Frequent Co-Authors

Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Wojciech Knap
Wojciech Knap Warsaw University of Technology
Alexander A. Balandin
Alexander A. Balandin University of California, Los Angeles
John W. Palmour
John W. Palmour Wolfspeed, Inc.
Pavel Ivanov
Pavel Ivanov Brigham and Women's Hospital
Anant K. Agarwal
Anant K. Agarwal The Ohio State University
Remis Gaska
Remis Gaska UVTON, Inc.
Grigory Simin
Grigory Simin University of South Carolina
Nezih Pala
Nezih Pala Florida International University
M. Asif Khan
M. Asif Khan University of South Carolina

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Sergey Rumyantsev

Trending Scientists

Recently Published Articles