2026 Sergey Rumyantsev: Engineering and Technology Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Engineering and Technology	58	2460	2351	4	4	322	13889

Research.com Recognitions

2025 - Research.com Engineering and Technology in Poland Leader Award

Overview

Sergey Rumyantsev is affiliated with the Polish Academy of Sciences in Poland, contributing extensively to multiple fields within science and engineering. Their research spans materials science, engineering, and physics and astronomy, with a significant output across interdisciplinary subfields.

The main fields of study covered in their work include:

Materials Science
Engineering
Physics and Astronomy

Within these broader disciplines, they focus on subfields such as:

Electrical and Electronic Engineering
Materials Chemistry
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Rumyantsev's key research topics highlight the depth of their specialization, including:

GaN-based semiconductor devices and materials
2D Materials and Applications
Graphene research and applications
Gas Sensing Nanomaterials and Sensors
Quantum and electron transport phenomena
Organic and Molecular Conductors Research
Semiconductor Quantum Structures and Devices

Their published works have appeared in several prominent journals and venues with frequent publications in:

arXiv (Cornell University)
Applied Physics Letters
SSRN Electronic Journal
Sensors and Actuators B Chemical
ACS Sensors

Some recent papers authored by or co-authored with Sergey Rumyantsev include:

Electrically Insulating Flexible Films with Quasi-1D van der Waals Fillers as Efficient Electromagnetic Shields in the GHz and Sub-THz Frequency Bands (2021, Advanced Materials)
Graphene Epoxy-Based Composites as Efficient Electromagnetic Absorbers in the Extremely High-Frequency Band (2020, ACS Applied Materials & Interfaces)
Nature of the 1/f noise in graphene-direct evidence for the mobility fluctuation mechanism (2022, Nanoscale)
Effects of UV light irradiation on fluctuation enhanced gas sensing by carbon nanotube networks (2021, Sensors and Actuators B Chemical)
The road to the Second Karabakh War: the role of ethno-centric narratives in the Nagorno-Karabakh conflict (2021, Caucasus Survey)

Rumyantsev has collaborated regularly with a number of frequent co-authors, such as:

G. Cywiński
Alexander A. Balandin
W. Knap
Adil Rehman
Pavlo Sai

Best Publications

Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe

M. E. Levinshteĭn;S. L. Rumyantsev;Michael Shur

1197
Citations
Handbook series on semiconductor parameters

M Levinshtein;S Rumyantsev;M Shur

1147
Citations
Nonresonant Detection of Terahertz Radiation in Field Effect Transistors

W. Knap;V. Kachorovskii;Y. Deng;S. Rumyantsev

500
Citations
Selective gas sensing with a single pristine graphene transistor.

Sergey Rumyantsev;Sergey Rumyantsev;Guanxiong Liu;Michael S. Shur;Radislav A. Potyrailo

453
Citations
Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

R. Tauk;F. Teppe;S. Boubanga;D. Coquillat

432
Citations
Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors

W. Knap;F. Teppe;Y. Meziani;N. Dyakonova

397
Citations
Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors

W. Knap;Y. Deng;S. Rumyantsev;M. S. Shur

394
Citations
Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor

W. Knap;Y. Deng;S. Rumyantsev;J.-Q. Lü

294
Citations
Resonant and voltage-tunable terahertz detection in InGaAs /InP nanometer transistors

A. El Fatimy;F. Teppe;N. Dyakonova;W. Knap

277
Citations
Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor

F. Teppe;W. Knap;D. Veksler;M. S. Shur

217
Citations
Low-frequency electronic noise in the double-gate single-layer graphene transistors

G. Liu;W. Stillman;S. Rumyantsev;Q. Shao

202
Citations
Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms.

S Rumyantsev;S Rumyantsev;G Liu;W Stillman;M Shur

192
Citations
Low-noise top-gate graphene transistors

G. Liu;W. Stillman;S. Rumyantsev;Q. Shao

185
Citations
Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts

J. Renteria;R. Samnakay;S. L. Rumyantsev;C. Jiang

158
Citations
Flicker Noise in Bilayer Graphene Transistors

Qinghui Shao;Guanxiong Liu;D. Teweldebrhan;A.A. Balandin

156
Citations
Origin of 1/f noise in graphene multilayers: Surface vs. volume

Guanxiong Liu;Sergey Rumyantsev;Michael S. Shur;Alexander A. Balandin

154
Citations
Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices

R. Samnakay;C. Jiang;S. L. Rumyantsev;M. S. Shur

151
Citations
Terahertz detection by GaN/AlGaN transistors

A. El Fatimy;S. Boubanga Tombet;F. Teppe;W. Knap

141
Citations
AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

M. E. Levinshtein;S. L. Rumyantsev;R. Gaska;J. W. Yang

136
Citations
SiC materials and devices

Michael Shur;Sergey Rumyantsev;M. E. Levinshteĭn

134
Citations