What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Electrical engineering
- Transistor
Optoelectronics, Electrical engineering, Silicon carbide, Wide-bandgap semiconductor and Power MOSFET are his primary areas of study.
His work carried out in the field of Optoelectronics brings together such families of science as Layer and Transistor, Bipolar junction transistor, Voltage.
Power semiconductor device, Insulated-gate bipolar transistor, MOSFET, Diode and Power electronics are the subjects of his Electrical engineering studies.
His Power semiconductor device research includes themes of Schottky diode, Power module and Carrier lifetime.
The study incorporates disciplines such as Field-effect transistor, Silicon, Electronic engineering and Semiconductor in addition to Silicon carbide.
The various areas that Anant K. Agarwal examines in his Wide-bandgap semiconductor study include Metal gate and Band gap.
His most cited work include:
- Status and prospects for SiC power MOSFETs (327 citations)
- SiC power-switching devices-the second electronics revolution? (258 citations)
- Characterization, Modeling, and Application of 10-kV SiC MOSFET (253 citations)
What are the main themes of his work throughout his whole career to date?
Anant K. Agarwal spends much of his time researching Optoelectronics, Electrical engineering, Silicon carbide, Voltage and High voltage.
His Optoelectronics study integrates concerns from other disciplines, such as Transistor, Bipolar junction transistor, MOSFET and Power semiconductor device.
His Power semiconductor device study combines topics in areas such as Power electronics and Engineering physics.
His study looks at the relationship between Electrical engineering and fields such as Layer, as well as how they intersect with chemical problems.
His studies in Silicon carbide integrate themes in fields like Semiconductor device, Doping, Silicon, Semiconductor and Electronic engineering.
His Wide-bandgap semiconductor research is multidisciplinary, incorporating perspectives in Electron mobility and Band gap.
He most often published in these fields:
- Optoelectronics (72.32%)
- Electrical engineering (46.63%)
- Silicon carbide (40.15%)
What were the highlights of his more recent work (between 2011-2021)?
- Optoelectronics (72.32%)
- Electrical engineering (46.63%)
- Silicon carbide (40.15%)
In recent papers he was focusing on the following fields of study:
Optoelectronics, Electrical engineering, Silicon carbide, Voltage and Transistor are his primary areas of study.
His Optoelectronics study incorporates themes from Layer, Semiconductor device, Thyristor, Power semiconductor device and MOSFET.
His biological study spans a wide range of topics, including Electronic engineering and Doping.
His Silicon carbide study also includes
- Base and Common emitter most often made with reference to Bipolar junction transistor,
- PIN diode which is related to area like Schottky diode.
His study in Transistor is interdisciplinary in nature, drawing from both Diode and Short circuit.
As a part of the same scientific study, Anant K. Agarwal usually deals with the Insulated-gate bipolar transistor, concentrating on Wide-bandgap semiconductor and frequently concerns with Power electronics.
Between 2011 and 2021, his most popular works were:
- Characterization of 15 kV SiC n-IGBT and its application considerations for high power converters (71 citations)
- Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs (49 citations)
- Comparison study of 12kV n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications (45 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Electrical engineering
- Transistor
His primary areas of study are Optoelectronics, Electrical engineering, Thyristor, Insulated-gate bipolar transistor and Voltage.
His research in Optoelectronics intersects with topics in Layer, Blocking and Anode.
His Electrical engineering research focuses on Field-effect transistor and PIN diode.
He has included themes like Power factor, Switched-mode power supply, Voltage optimisation, Silicon carbide and Power semiconductor device in his Insulated-gate bipolar transistor study.
His studies deal with areas such as Bipolar junction transistor and Power MOSFET, MOSFET as well as Silicon carbide.
His Power semiconductor device research is multidisciplinary, relying on both Wide-bandgap semiconductor and Electronic engineering.
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