World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
72
Citations
15538
World Ranking
827
National Ranking
352

Materials Science

D-Index
72
Citations
14874
World Ranking
4140
National Ranking
1110

Research.com Recognitions

  • 2013 - Member of the National Academy of Engineering For contributions to shared-memory and multicore computer architectures.
  • 2013 - Fellow of the American Academy of Arts and Sciences
  • 2012 - IEEE Fellow For contributions to silicon carbide power device technology
  • 2007 - ACM Fellow For contributions to parallel and reconfigurable computing.

Overview

Anant K. Agarwal is affiliated with The Ohio State University in the United States and has an extensive publication record in the field of engineering, particularly focused on silicon carbide semiconductor technologies and related areas.

The researcher's work primarily covers electrical and electronic engineering, with notable contributions to electronic, optical, and magnetic materials, as well as artificial intelligence and information systems. The main research topics include:

  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Electromagnetic Compatibility and Noise Suppression
  • Multilevel Inverters and Converters
  • Silicon and Solar Cell Technologies
  • Integrated Circuits and Semiconductor Failure Analysis

Significant publication venues where Anant K. Agarwal frequently contributes include:

  • IEEE Transactions on Electron Devices
  • Electronics
  • 2022 IEEE International Reliability Physics Symposium (IRPS)
  • Materials Science in Semiconductor Processing
  • Materials

Recent papers authored by this researcher demonstrate a focus on silicon carbide MOSFETs and power semiconductor reliability, with titles, years, and publication venues as follows:

  • Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs, 2021, IEEE Journal of the Electron Devices Society
  • Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs, 2021, IEEE Access
  • Developing 13-kV 4H-SiC MOSFETs: Significance of Implant Straggle, Channel Design, and MOS Process on Static Performance, 2020, IEEE Transactions on Electron Devices
  • 1200-V SiC MOSFET Short-Circuit Ruggedness Evaluation and Methods to Improve Withstand Time, 2022, IEEE Journal of Emerging and Selected Topics in Power Electronics
  • The Road to a Robust and Affordable SiC Power MOSFET Technology, 2021, Energies

Frequent co-authors collaborating with this scientist include:

  • Marvin H. White
  • Michael Jin
  • Monikuntala Bhattacharya
  • Hengyu Yu
  • Limeng Shi

The scientist has been recognized with several awards, including:

  • Fellow of the American Academy of Arts and Sciences, 2013
  • Member of the National Academy of Engineering, 2013, for contributions to shared-memory and multicore computer architectures
  • IEEE Fellow, 2012, for contributions to silicon carbide power device technology
  • ACM Fellow, 2007, for contributions to parallel and reconfigurable computing

Best Publications

  • Status and prospects for SiC power MOSFETs

    J.A. Cooper;M.R. Melloch;R. Singh;A. Agarwal

  • SiC power-switching devices-the second electronics revolution?

    J.A. Cooper;A. Agarwal

  • Advances in Silicon Carbide Processing and Applications

    Anant Agarwal;Stephen Saddow

  • Characterization, Modeling, and Application of 10-kV SiC MOSFET

    Jun Wang;Tiefu Zhao;Jun Li;A.Q. Huang

  • Carbon nanotubes/titanium dioxide (CNTs/TiO2) nanocomposites prepared by conventional and novel surfactant wrapping sol–gel methods exhibiting enhanced photocatalytic activity

    Unknown

  • A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

    A. Agarwal;H. Fatima;S. Haney;Sei-Hyung Ryu

  • Environmental Epidemiology, Volume 1: Public Health and Hazardous Wastes

    Unknown

  • Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors

    A.K. Agarwal;S. Seshadri;L.B. Rowland

  • 160 h of chemical-looping combustion in a 10 kW reactor system with a NiO-based oxygen carrier

    Unknown

  • GaN grown on hydrogen plasma cleaned 6H‐SiC substrates

    M. E. Lin;S. Strite;A. Agarwal;A. Salvador

  • 1800 V NPN bipolar junction transistors in 4H-SiC

    Sei-Hyung Ryu;A.K. Agarwal;R. Singh;J.W. Palmour

  • The response of wire rope strands to axial tensile loads—Part I. Experimental results and theoretical predictions

    Unknown

  • SiC Power Devices for Microgrids

    Qingchun Zhang;R Callanan;M K Das;Sei-Hyung Ryu

  • Li7PS6 and Li6PS5X (X: Cl, Br, I): Possible Three‐dimensional Diffusion Pathways for Lithium Ions and Temperature Dependence of the Ionic Conductivity by�…

    Unknown

  • Unequalisation of electrode capacitances for enhanced energy capacity in asymmetrical supercapacitors

    Unknown

  • Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems

    Tiefu Zhao;Jun Wang;A.Q. Huang;A. Agarwal

  • 1.1 kV 4H-SiC power UMOSFETs

    A.K. Agarwal;J.B. Casady;L.B. Rowland;W.F. Valek

  • Thermal desorption of ultraviolet–ozone oxidized Ge(001) for substrate cleaning

    X. J. Zhang;G. Xue;A. Agarwal;R. Tsu

  • Pushing AI to wireless network edge: an overview on integrated sensing, communication, and computation towards 6G

    Unknown

  • 10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation

    David Grider;Mrinal Das;Anant Agarwal;John Palmour

  • Non-volatile random access memory cell constructed of silicon carbide

    Anant K. Agarwal;Richard R. Siergiej;Charles D. Brandt;Marvin H. White

  • Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

    S. Dhar;S. Haney;L. Cheng;S.-R. Ryu

  • Recent progress in SiC DMOSFETs and JBS diodes at Cree

    R.J. Callanan;A. Agarwal;A. Burk;M. Das

Frequent Co-Authors

Sei-Hyung Ryu
Sei-Hyung Ryu Wolfspeed, Inc.
Pavel Ivanov
Pavel Ivanov Brigham and Women's Hospital
Sergey Rumyantsev
Sergey Rumyantsev University of California, Riverside
Alex Q. Huang
Alex Q. Huang The University of Texas at Austin
John W. Palmour
John W. Palmour Wolfspeed, Inc.
Subhashish Bhattacharya
Subhashish Bhattacharya North Carolina State University
Michael Shur
Michael Shur Rensselaer Polytechnic Institute
T.P. Chow
T.P. Chow Rensselaer Polytechnic Institute
John R. Williams
John R. Williams Auburn University
Veena Misra
Veena Misra North Carolina State University

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