D-Index & Metrics Best Publications

D-Index & Metrics

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 59 Citations 10,368 295 World Ranking 627 National Ranking 313
Materials Science D-index 58 Citations 10,073 298 World Ranking 3655 National Ranking 1071

Research.com Recognitions

Awards & Achievements

2013 - Fellow of the American Academy of Arts and Sciences

2013 - Member of the National Academy of Engineering For contributions to shared-memory and multicore computer architectures.

2012 - IEEE Fellow For contributions to silicon carbide power device technology

2007 - ACM Fellow For contributions to parallel and reconfigurable computing.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Transistor

Optoelectronics, Electrical engineering, Silicon carbide, Wide-bandgap semiconductor and Power MOSFET are his primary areas of study. His work carried out in the field of Optoelectronics brings together such families of science as Layer and Transistor, Bipolar junction transistor, Voltage. Power semiconductor device, Insulated-gate bipolar transistor, MOSFET, Diode and Power electronics are the subjects of his Electrical engineering studies.

His Power semiconductor device research includes themes of Schottky diode, Power module and Carrier lifetime. The study incorporates disciplines such as Field-effect transistor, Silicon, Electronic engineering and Semiconductor in addition to Silicon carbide. The various areas that Anant K. Agarwal examines in his Wide-bandgap semiconductor study include Metal gate and Band gap.

His most cited work include:

  • Status and prospects for SiC power MOSFETs (327 citations)
  • SiC power-switching devices-the second electronics revolution? (258 citations)
  • Characterization, Modeling, and Application of 10-kV SiC MOSFET (253 citations)

What are the main themes of his work throughout his whole career to date?

Anant K. Agarwal spends much of his time researching Optoelectronics, Electrical engineering, Silicon carbide, Voltage and High voltage. His Optoelectronics study integrates concerns from other disciplines, such as Transistor, Bipolar junction transistor, MOSFET and Power semiconductor device. His Power semiconductor device study combines topics in areas such as Power electronics and Engineering physics.

His study looks at the relationship between Electrical engineering and fields such as Layer, as well as how they intersect with chemical problems. His studies in Silicon carbide integrate themes in fields like Semiconductor device, Doping, Silicon, Semiconductor and Electronic engineering. His Wide-bandgap semiconductor research is multidisciplinary, incorporating perspectives in Electron mobility and Band gap.

He most often published in these fields:

  • Optoelectronics (72.32%)
  • Electrical engineering (46.63%)
  • Silicon carbide (40.15%)

What were the highlights of his more recent work (between 2011-2021)?

  • Optoelectronics (72.32%)
  • Electrical engineering (46.63%)
  • Silicon carbide (40.15%)

In recent papers he was focusing on the following fields of study:

Optoelectronics, Electrical engineering, Silicon carbide, Voltage and Transistor are his primary areas of study. His Optoelectronics study incorporates themes from Layer, Semiconductor device, Thyristor, Power semiconductor device and MOSFET. His biological study spans a wide range of topics, including Electronic engineering and Doping.

His Silicon carbide study also includes

  • Base and Common emitter most often made with reference to Bipolar junction transistor,
  • PIN diode which is related to area like Schottky diode. His study in Transistor is interdisciplinary in nature, drawing from both Diode and Short circuit. As a part of the same scientific study, Anant K. Agarwal usually deals with the Insulated-gate bipolar transistor, concentrating on Wide-bandgap semiconductor and frequently concerns with Power electronics.

Between 2011 and 2021, his most popular works were:

  • Characterization of 15 kV SiC n-IGBT and its application considerations for high power converters (71 citations)
  • Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs (49 citations)
  • Comparison study of 12kV n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications (45 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Transistor

His primary areas of study are Optoelectronics, Electrical engineering, Thyristor, Insulated-gate bipolar transistor and Voltage. His research in Optoelectronics intersects with topics in Layer, Blocking and Anode. His Electrical engineering research focuses on Field-effect transistor and PIN diode.

He has included themes like Power factor, Switched-mode power supply, Voltage optimisation, Silicon carbide and Power semiconductor device in his Insulated-gate bipolar transistor study. His studies deal with areas such as Bipolar junction transistor and Power MOSFET, MOSFET as well as Silicon carbide. His Power semiconductor device research is multidisciplinary, relying on both Wide-bandgap semiconductor and Electronic engineering.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Status and prospects for SiC power MOSFETs

J.A. Cooper;M.R. Melloch;R. Singh;A. Agarwal.
IEEE Transactions on Electron Devices (2002)

453 Citations

Advances in Silicon Carbide Processing and Applications

Anant Agarwal;Stephen Saddow.
(2004)

414 Citations

SiC power-switching devices-the second electronics revolution?

J.A. Cooper;A. Agarwal.
Proceedings of the IEEE (2002)

355 Citations

Characterization, Modeling, and Application of 10-kV SiC MOSFET

Jun Wang;Tiefu Zhao;Jun Li;A.Q. Huang.
IEEE Transactions on Electron Devices (2008)

302 Citations

Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy

G. Martin;S. Strite;A. Botchkarev;A. Agarwal.
Applied Physics Letters (1994)

270 Citations

Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors

A.K. Agarwal;S. Seshadri;L.B. Rowland.
IEEE Electron Device Letters (1997)

249 Citations

GaN grown on hydrogen plasma cleaned 6H‐SiC substrates

M. E. Lin;S. Strite;A. Agarwal;A. Salvador.
Applied Physics Letters (1993)

231 Citations

1800 V NPN bipolar junction transistors in 4H-SiC

Sei-Hyung Ryu;A.K. Agarwal;R. Singh;J.W. Palmour.
IEEE Electron Device Letters (2001)

224 Citations

A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

A. Agarwal;H. Fatima;S. Haney;Sei-Hyung Ryu.
IEEE Electron Device Letters (2007)

208 Citations

Interface trap profile near the band edges at the 4H-SiC/SiO2 interface

N. S. Saks;S. S. Mani;A. K. Agarwal.
Applied Physics Letters (2000)

200 Citations

Best Scientists Citing Anant K. Agarwal

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Tsunenobu Kimoto

Kyoto University

Publications: 132

Jun Suda

Jun Suda

Nagoya University

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Subhashish Bhattacharya

Subhashish Bhattacharya

North Carolina State University

Publications: 67

Alex Q. Huang

Alex Q. Huang

The University of Texas at Austin

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Sei-Hyung Ryu

Sei-Hyung Ryu

Cree (China)

Publications: 62

Mikael Östling

Mikael Östling

Royal Institute of Technology

Publications: 54

Hajime Okumura

Hajime Okumura

National Institute of Advanced Industrial Science and Technology

Publications: 41

Leonard C. Feldman

Leonard C. Feldman

Rutgers, The State University of New Jersey

Publications: 40

John R. Williams

John R. Williams

Auburn University

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Fan Ren

Fan Ren

University of Florida

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Dushan Boroyevich

Dushan Boroyevich

Virginia Tech

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Stephen J. Pearton

Stephen J. Pearton

University of Florida

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Leon M. Tolbert

Leon M. Tolbert

University of Tennessee at Knoxville

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Fabrizio Roccaforte

Fabrizio Roccaforte

National Research Council (CNR)

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T.P. Chow

T.P. Chow

Rensselaer Polytechnic Institute

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Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking d-index is inferred from publications deemed to belong to the considered discipline.

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