2013 - Fellow of the American Academy of Arts and Sciences
2013 - Member of the National Academy of Engineering For contributions to shared-memory and multicore computer architectures.
2012 - IEEE Fellow For contributions to silicon carbide power device technology
2007 - ACM Fellow For contributions to parallel and reconfigurable computing.
Optoelectronics, Electrical engineering, Silicon carbide, Wide-bandgap semiconductor and Power MOSFET are his primary areas of study. His work carried out in the field of Optoelectronics brings together such families of science as Layer and Transistor, Bipolar junction transistor, Voltage. Power semiconductor device, Insulated-gate bipolar transistor, MOSFET, Diode and Power electronics are the subjects of his Electrical engineering studies.
His Power semiconductor device research includes themes of Schottky diode, Power module and Carrier lifetime. The study incorporates disciplines such as Field-effect transistor, Silicon, Electronic engineering and Semiconductor in addition to Silicon carbide. The various areas that Anant K. Agarwal examines in his Wide-bandgap semiconductor study include Metal gate and Band gap.
Anant K. Agarwal spends much of his time researching Optoelectronics, Electrical engineering, Silicon carbide, Voltage and High voltage. His Optoelectronics study integrates concerns from other disciplines, such as Transistor, Bipolar junction transistor, MOSFET and Power semiconductor device. His Power semiconductor device study combines topics in areas such as Power electronics and Engineering physics.
His study looks at the relationship between Electrical engineering and fields such as Layer, as well as how they intersect with chemical problems. His studies in Silicon carbide integrate themes in fields like Semiconductor device, Doping, Silicon, Semiconductor and Electronic engineering. His Wide-bandgap semiconductor research is multidisciplinary, incorporating perspectives in Electron mobility and Band gap.
Optoelectronics, Electrical engineering, Silicon carbide, Voltage and Transistor are his primary areas of study. His Optoelectronics study incorporates themes from Layer, Semiconductor device, Thyristor, Power semiconductor device and MOSFET. His biological study spans a wide range of topics, including Electronic engineering and Doping.
His Silicon carbide study also includes
His primary areas of study are Optoelectronics, Electrical engineering, Thyristor, Insulated-gate bipolar transistor and Voltage. His research in Optoelectronics intersects with topics in Layer, Blocking and Anode. His Electrical engineering research focuses on Field-effect transistor and PIN diode.
He has included themes like Power factor, Switched-mode power supply, Voltage optimisation, Silicon carbide and Power semiconductor device in his Insulated-gate bipolar transistor study. His studies deal with areas such as Bipolar junction transistor and Power MOSFET, MOSFET as well as Silicon carbide. His Power semiconductor device research is multidisciplinary, relying on both Wide-bandgap semiconductor and Electronic engineering.
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Status and prospects for SiC power MOSFETs
J.A. Cooper;M.R. Melloch;R. Singh;A. Agarwal.
IEEE Transactions on Electron Devices (2002)
Advances in Silicon Carbide Processing and Applications
Anant Agarwal;Stephen Saddow.
SiC power-switching devices-the second electronics revolution?
J.A. Cooper;A. Agarwal.
Proceedings of the IEEE (2002)
Characterization, Modeling, and Application of 10-kV SiC MOSFET
Jun Wang;Tiefu Zhao;Jun Li;A.Q. Huang.
IEEE Transactions on Electron Devices (2008)
Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy
G. Martin;S. Strite;A. Botchkarev;A. Agarwal.
Applied Physics Letters (1994)
Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors
A.K. Agarwal;S. Seshadri;L.B. Rowland.
IEEE Electron Device Letters (1997)
A New Degradation Mechanism in High-Voltage SiC Power MOSFETs
A. Agarwal;H. Fatima;S. Haney;Sei-Hyung Ryu.
IEEE Electron Device Letters (2007)
GaN grown on hydrogen plasma cleaned 6H‐SiC substrates
M. E. Lin;S. Strite;A. Agarwal;A. Salvador.
Applied Physics Letters (1993)
1800 V NPN bipolar junction transistors in 4H-SiC
Sei-Hyung Ryu;A.K. Agarwal;R. Singh;J.W. Palmour.
IEEE Electron Device Letters (2001)
Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
N. S. Saks;S. S. Mani;A. K. Agarwal.
Applied Physics Letters (2000)
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