World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
72
Citations
15538
World Ranking
827
National Ranking
353

Materials Science

D-Index
72
Citations
14874
World Ranking
4138
National Ranking
1108

Anant K. Agarwal publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Anant K. Agarwal sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 518 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Anant K. Agarwal D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Anant K. Agarwal sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 72 D-Index — 89th percentile

89% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2013 - Member of the National Academy of Engineering For contributions to shared-memory and multicore computer architectures.
  • 2013 - Fellow of the American Academy of Arts and Sciences
  • 2012 - IEEE Fellow For contributions to silicon carbide power device technology
  • 2007 - ACM Fellow For contributions to parallel and reconfigurable computing.

Overview

Anant K. Agarwal is affiliated with The Ohio State University in the United States and has an extensive publication record in the field of engineering, particularly focused on silicon carbide semiconductor technologies and related areas.

The researcher's work primarily covers electrical and electronic engineering, with notable contributions to electronic, optical, and magnetic materials, as well as artificial intelligence and information systems. The main research topics include:

  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Electromagnetic Compatibility and Noise Suppression
  • Multilevel Inverters and Converters
  • Silicon and Solar Cell Technologies
  • Integrated Circuits and Semiconductor Failure Analysis

Significant publication venues where Anant K. Agarwal frequently contributes include:

  • IEEE Transactions on Electron Devices
  • Electronics
  • 2022 IEEE International Reliability Physics Symposium (IRPS)
  • Materials Science in Semiconductor Processing
  • Materials

Recent papers authored by this researcher demonstrate a focus on silicon carbide MOSFETs and power semiconductor reliability, with titles, years, and publication venues as follows:

  • Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs, 2021, IEEE Journal of the Electron Devices Society
  • Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs, 2021, IEEE Access
  • Developing 13-kV 4H-SiC MOSFETs: Significance of Implant Straggle, Channel Design, and MOS Process on Static Performance, 2020, IEEE Transactions on Electron Devices
  • 1200-V SiC MOSFET Short-Circuit Ruggedness Evaluation and Methods to Improve Withstand Time, 2022, IEEE Journal of Emerging and Selected Topics in Power Electronics
  • The Road to a Robust and Affordable SiC Power MOSFET Technology, 2021, Energies

Frequent co-authors collaborating with this scientist include:

  • Marvin H. White
  • Michael Jin
  • Monikuntala Bhattacharya
  • Hengyu Yu
  • Limeng Shi

The scientist has been recognized with several awards, including:

  • Fellow of the American Academy of Arts and Sciences, 2013
  • Member of the National Academy of Engineering, 2013, for contributions to shared-memory and multicore computer architectures
  • IEEE Fellow, 2012, for contributions to silicon carbide power device technology
  • ACM Fellow, 2007, for contributions to parallel and reconfigurable computing

Best Publications

  • Status and prospects for SiC power MOSFETs

    J.A. Cooper;M.R. Melloch;R. Singh;A. Agarwal

  • SiC power-switching devices-the second electronics revolution?

    J.A. Cooper;A. Agarwal

  • Advances in Silicon Carbide Processing and Applications

    Anant Agarwal;Stephen Saddow

  • Characterization, Modeling, and Application of 10-kV SiC MOSFET

    Jun Wang;Tiefu Zhao;Jun Li;A.Q. Huang

  • Carbon nanotubes/titanium dioxide (CNTs/TiO2) nanocomposites prepared by conventional and novel surfactant wrapping sol–gel methods exhibiting enhanced photocatalytic activity

    Unknown

  • A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

    A. Agarwal;H. Fatima;S. Haney;Sei-Hyung Ryu

  • Environmental Epidemiology, Volume 1: Public Health and Hazardous Wastes

    Unknown

  • Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors

    A.K. Agarwal;S. Seshadri;L.B. Rowland

  • 160 h of chemical-looping combustion in a 10 kW reactor system with a NiO-based oxygen carrier

    Unknown

  • GaN grown on hydrogen plasma cleaned 6H‐SiC substrates

    M. E. Lin;S. Strite;A. Agarwal;A. Salvador

  • 1800 V NPN bipolar junction transistors in 4H-SiC

    Sei-Hyung Ryu;A.K. Agarwal;R. Singh;J.W. Palmour

  • The response of wire rope strands to axial tensile loads—Part I. Experimental results and theoretical predictions

    Unknown

  • SiC Power Devices for Microgrids

    Qingchun Zhang;R Callanan;M K Das;Sei-Hyung Ryu

  • Li7PS6 and Li6PS5X (X: Cl, Br, I): Possible Three‐dimensional Diffusion Pathways for Lithium Ions and Temperature Dependence of the Ionic Conductivity by�…

    Unknown

  • Unequalisation of electrode capacitances for enhanced energy capacity in asymmetrical supercapacitors

    Unknown

  • Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems

    Tiefu Zhao;Jun Wang;A.Q. Huang;A. Agarwal

  • 1.1 kV 4H-SiC power UMOSFETs

    A.K. Agarwal;J.B. Casady;L.B. Rowland;W.F. Valek

  • Thermal desorption of ultraviolet–ozone oxidized Ge(001) for substrate cleaning

    X. J. Zhang;G. Xue;A. Agarwal;R. Tsu

  • Pushing AI to wireless network edge: an overview on integrated sensing, communication, and computation towards 6G

    Unknown

  • 10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation

    David Grider;Mrinal Das;Anant Agarwal;John Palmour

  • Non-volatile random access memory cell constructed of silicon carbide

    Anant K. Agarwal;Richard R. Siergiej;Charles D. Brandt;Marvin H. White

  • Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

    S. Dhar;S. Haney;L. Cheng;S.-R. Ryu

  • Recent progress in SiC DMOSFETs and JBS diodes at Cree

    R.J. Callanan;A. Agarwal;A. Burk;M. Das

Frequent Co-Authors

Sei-Hyung Ryu
Sei-Hyung Ryu Wolfspeed, Inc.
Pavel Ivanov
Pavel Ivanov Brigham and Women's Hospital
Sergey Rumyantsev
Sergey Rumyantsev University of California, Riverside
Alex Q. Huang
Alex Q. Huang The University of Texas at Austin
John W. Palmour
John W. Palmour Wolfspeed, Inc.
Subhashish Bhattacharya
Subhashish Bhattacharya North Carolina State University
Michael Shur
Michael Shur Rensselaer Polytechnic Institute
T.P. Chow
T.P. Chow Rensselaer Polytechnic Institute
John R. Williams
John R. Williams Auburn University
Veena Misra
Veena Misra North Carolina State University

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