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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
48
Citations
11019
World Ranking
3038
National Ranking
1143

Research.com Recognitions

  • 2007 - IEEE Fellow For contributions to smart power semiconductor devices

Overview

T.P. Chow is affiliated with Rensselaer Polytechnic Institute in the United States and focuses on research within the field of Engineering, specifically Electrical and Electronic Engineering. Their work spans several subfields, including Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, and Industrial and Manufacturing Engineering.

The main research topics covered in their publications include:

  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Radiation Effects in Electronics
  • Ga2O3 and related materials
  • Multilevel Inverters and Converters
  • Electromagnetic Compatibility and Noise Suppression
  • HVDC Systems and Fault Protection

Their recent papers reflect a focus on power devices and semiconductor technology advancements. Notable publications include:

  • "Ion-Induced Mesoplasma Formation and Thermal Destruction in 4H-SiC Power MOSFET Devices," 2021, IEEE Transactions on Nuclear Science
  • "Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs," 2020, Materials Science Forum
  • "Scalable Ultrahigh Voltage SiC Superjunction Device Technologies for Power Electronics Applications," 2022, 2022 International Electron Devices Meeting (IEDM)
  • "Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT," 2020, AIP Advances
  • "Simulation-based study of single-event burnout in 4H-SiC high-voltage vertical superjunction DMOSFET: Physical failure mechanism and robustness vs performance tradeoffs," 2022, Applied Physics Letters

Frequent coauthors collaborating with T.P. Chow include:

  • Collin Hitchcock
  • Mohamed Torky
  • Joseph A. McPherson
  • Wei Ji
  • Andrew A. Woodworth

Publication venues where T.P. Chow has contributed multiple works are:

  • Materials Science Forum
  • Diamond and Related Materials
  • AIP Advances
  • Diffusion and Defect Data, Solid State Data. Part B, Solid State Phenomena/Solid State Phenomena
  • physica status solidi (a)

In 2007, T.P. Chow was recognized as an IEEE Fellow for contributions to smart power semiconductor devices.

Best Publications

  • Wide bandgap compound semiconductors for superior high-voltage unipolar power devices

    T.P. Chow;R. Tyagi

  • Wide bandgap compound semiconductors for superior high-voltage power devices

    T.P. Chow;R. Tyagi

  • Silicon carbide benefits and advantages for power electronics circuits and systems

    A. Elasser;T.P. Chow

  • Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates

    W. Huang;T. Khan;T.P. Chow

  • SiC power Schottky and PiN diodes

    R. Singh;J.A. Cooper;M.R. Melloch;T.P. Chow

  • Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method

    Hsueh-Rong Chang;Bantval J. Baliga;Tat-Sing P. Chow

  • High-voltage normally off GaN MOSFETs on sapphire substrates

    K. Matocha;T.P. Chow;R.J. Gutmann

  • Method of fabricating a self-aligned DMOS transistor device using SiC and spacers

    Mario Ghezzo;Tat-Sing P. Chow;James W. Kretchmer;Richard J. Saia

  • Analytical modeling and experimental evaluation of interconnect parasitic inductance on MOSFET switching characteristics

    Y. Xiao;H. Shah;T.P. Chow;R.J. Gutmann

  • Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

    T. Paul Chow;Ichiro Omura;Masataka Higashiwaki;Hiroshi Kawarada

  • SiC and GaN bipolar power devices

    T.P. Chow;V. Khemka;J. Fedison;N. Ramungul

  • A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications

    A. Elasser;M. Kheraluwala;M. Ghezzo;R. Steigerwald

  • Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

    Z. Li;J. Waldron;T. Detchprohm;C. Wetzel

  • Electrical characteristics of magnesium-doped gallium nitride junction diodes

    J. B. Fedison;T. P. Chow;H. Lu;I. B. Bhat

  • Refractory metal silicides: Thin-film properties and processing technology

    T.P. Chow;A.J. Steckl

  • Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area

    Bantval J. Baliga;Tat-Sing P. Chow;Hsueh-Rong Chang

  • 1000-V, 30-A 4H-SiC BJTs with high current gain

    S. Krishnaswami;A. Agarwal;Sei-Hyung Ryu;C. Capell

  • SiC Power Devices

    T. P. Chow;M. Ghezzo

  • Modification of Schottky barriers in silicon by reactive ion etching with NF3

    S. Ashok;T. P. Chow;B. J. Baliga

  • Contact and via structures with copper interconnects fabricated using dual Damascene technology

    S. Lakshminarayanan;J. Steigerwald;D.T. Price;M. Bourgeois

  • Wide bandgap semiconductor power devices for energy efficient systems

    Unknown

Frequent Co-Authors

Bantval J. Baliga
Bantval J. Baliga North Carolina State University
Anant K. Agarwal
Anant K. Agarwal The Ohio State University
Sei-Hyung Ryu
Sei-Hyung Ryu Wolfspeed, Inc.
Andrew J. Steckl
Andrew J. Steckl University of Cincinnati
John W. Palmour
John W. Palmour Wolfspeed, Inc.
Robert L. Steigerwald
Robert L. Steigerwald General Electric (United States)
Jong Kyu Kim
Jong Kyu Kim Pohang University of Science and Technology
James E. Butler
James E. Butler Euclid TechLabs, LLC
E. F. Schubert
E. F. Schubert Rensselaer Polytechnic Institute
Michael R. Melloch
Michael R. Melloch Purdue University West Lafayette

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