2007 - IEEE Fellow For contributions to smart power semiconductor devices
His scientific interests lie mostly in Optoelectronics, Electrical engineering, Wide-bandgap semiconductor, Silicon and High voltage. His Optoelectronics study combines topics from a wide range of disciplines, such as Transistor, Voltage and Gallium nitride. His study involves MOSFET and Threshold voltage, a branch of Electrical engineering.
His Wide-bandgap semiconductor research is multidisciplinary, incorporating perspectives in Chemical vapor deposition, Diode, Semiconductor, Capacitor and Silicon dioxide. His Silicon research is multidisciplinary, relying on both Silicon bandgap temperature sensor, Silicon carbide, Electrical resistivity and conductivity and Electronic engineering. His work in Doping addresses subjects such as Breakdown voltage, which are connected to disciplines such as Safe operating area.
T.P. Chow mainly investigates Optoelectronics, Electrical engineering, Wide-bandgap semiconductor, Voltage and High voltage. His Optoelectronics study integrates concerns from other disciplines, such as Transistor, Bipolar junction transistor, Silicon carbide and Breakdown voltage. As part of the same scientific family, T.P. Chow usually focuses on Bipolar junction transistor, concentrating on Power semiconductor device and intersecting with Silicon and Electronic engineering.
His study looks at the relationship between Wide-bandgap semiconductor and fields such as Semiconductor, as well as how they intersect with chemical problems. His Voltage research incorporates elements of Blocking and Anode. His High voltage study integrates concerns from other disciplines, such as Schottky diode and Diamond.
His primary areas of investigation include Optoelectronics, Electrical engineering, Transistor, MOSFET and Breakdown voltage. His biological study spans a wide range of topics, including Field-effect transistor, High-electron-mobility transistor and High voltage, Voltage. The various areas that T.P. Chow examines in his Electrical engineering study include Figure of merit and Silicon.
He interconnects Wide-bandgap semiconductor, Gallium nitride and Capacitance in the investigation of issues within MOSFET. His research investigates the connection between Wide-bandgap semiconductor and topics such as Etching that intersect with problems in Aluminum gallium nitride. The concepts of his Breakdown voltage study are interwoven with issues in Trench and Power MOSFET.
His main research concerns Optoelectronics, Electrical engineering, High voltage, Breakdown voltage and Schottky diode. T.P. Chow studies Optoelectronics, focusing on Doping in particular. T.P. Chow combines Electrical engineering and AND gate in his research.
He has researched Breakdown voltage in several fields, including Gallium nitride and MOSFET. In his study, Spreading resistance profiling, Quantum tunnelling and Schottky barrier is strongly linked to Rectifier, which falls under the umbrella field of Schottky diode. His studies in High-electron-mobility transistor integrate themes in fields like Layer, Wide-bandgap semiconductor, Heterojunction and Integrated circuit.
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Wide bandgap compound semiconductors for superior high-voltage power devices
T.P. Chow;R. Tyagi.
international symposium on power semiconductor devices and ic's (1993)
Wide bandgap compound semiconductors for superior high-voltage power devices
T.P. Chow;R. Tyagi.
international symposium on power semiconductor devices and ic's (1993)
Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
T.P. Chow;R. Tyagi.
IEEE Transactions on Electron Devices (1994)
Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
T.P. Chow;R. Tyagi.
IEEE Transactions on Electron Devices (1994)
Silicon carbide benefits and advantages for power electronics circuits and systems
A. Elasser;T.P. Chow.
Proceedings of the IEEE (2002)
Silicon carbide benefits and advantages for power electronics circuits and systems
A. Elasser;T.P. Chow.
Proceedings of the IEEE (2002)
Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates
W. Huang;T. Khan;T.P. Chow.
international symposium on power semiconductor devices and ic's (2006)
Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates
W. Huang;T. Khan;T.P. Chow.
international symposium on power semiconductor devices and ic's (2006)
SiC power Schottky and PiN diodes
R. Singh;J.A. Cooper;M.R. Melloch;T.P. Chow.
IEEE Transactions on Electron Devices (2002)
SiC power Schottky and PiN diodes
R. Singh;J.A. Cooper;M.R. Melloch;T.P. Chow.
IEEE Transactions on Electron Devices (2002)
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