World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
6169
World Ranking
5950
National Ranking
118

Amador Pérez-Tomás publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Amador Pérez-Tomás sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 156 publications — 16th percentile

16% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Amador Pérez-Tomás D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Amador Pérez-Tomás sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Amador Pérez-Tomás is affiliated with the Institute of Microelectronics of Barcelona in Spain. Their research primarily focuses on the study and development of materials within the fields of Materials Science and Engineering.

Their work spans several subfields, including:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Biomedical Engineering

The main topics explored by Pérez-Tomás include:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • Advanced Photocatalysis Techniques
  • Semiconductor materials and devices
  • Electronic and Structural Properties of Oxides
  • Ferroelectric and Piezoelectric Materials
  • Acoustic Wave Resonator Technologies

Pérez-Tomás has contributed to various publication venues, with a particular presence in:

  • Materials Today Physics
  • Advanced Electronic Materials
  • Materials
  • Journal of Alloys and Compounds
  • SSRN Electronic Journal

Frequent co-authors in Pérez-Tomás's research include:

  • E. Chikoidze
  • Zeyu Chi
  • Yves Dumont
  • Corinne Sartel
  • Vincent Sallet

Significant recent papers authored or co-authored by Pérez-Tomás showcase the breadth of their research interests:

  • p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics, 2020, Crystal Growth & Design
  • Origin of large negative electrocaloric effect in antiferroelectric PbZrO3, 2021, Physical Review. B
  • Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation, 2022, Materials
  • Bipolar self-doping in ultra-wide bandgap spinel ZnGa2O4, 2021, Materials Today Physics
  • Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3, 2020, Materials Today Physics

Best Publications

  • A Survey of Wide Bandgap Power Semiconductor Devices

    Jose Millan;Philippe Godignon;Xavier Perpina;Amador Perez-Tomas

  • P-type β-gallium oxide: A new perspective for power and optoelectronic devices

    Ekaterine Chikoidze;Adel Fellous;Amador Perez-Tomas;Guillaume Sauthier

  • Inhibiting the absorber/Mo-back contact decomposition reaction in Cu2ZnSnSe4 solar cells: the role of a ZnO intermediate nanolayer

    Simón López-Marino;Marcel Placidi;Amador Pérez-Tomás;Jordi Llobet

  • Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors

    Amador Pérez-Tomás;P. Brosselard;P. Godignon;J. Millan

  • Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes

    R. Perez;D. Tournier;A. Perez-Tomas;P. Godignon

  • p-Type Ultrawide-Band-Gap Spinel ZnGa2O4 : New Perspectives for Energy Electronics

    Ekaterine Chikoidze;Corinne Sartel;Ismail Madaci;Hagar Mohamed

  • Modelling the inhomogeneous SiC Schottky interface

    P. M. Gammon;Amador Pérez-Tomás;V. A. Shah;O. Vavasour

  • GaN transistor characteristics at elevated temperatures

    A. Pérez-Tomás;M. Placidi;N. Baron;S. Chenot

  • Characterization and modeling of n-n Si∕SiC heterojunction diodes

    Amador Pérez-Tomás;M. R. Jennings;M. C. Davis;James A. Covington

  • Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor

    Ekaterine Chikoidze;Corinne Sartel;Hagar Mohamed;Ismail Madaci

  • Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

    A. Pérez-Tomás;A. Fontserè;J. Llobet;M. Placidi

  • A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface

    A. Pérez-Tomás;P. Godignon;N. Mestres;J. Millán

  • Metal Oxides in Photovoltaics: All-Oxide, Ferroic, and Perovskite Solar Cells

    Amador Pérez-Tomás;Alba Mingorance;David M. Tanenbaum;Mónica Lira-Cantú

  • Origin of large negative electrocaloric effect in antiferroelectric PbZr O 3

    Pablo Vales-Castro;Romain Faye;Miquel Vellvehi;Youri Nouchokgwe

  • Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

    A. Fontserè;Amador Pérez-Tomás;M. Placidi;J. Llobet

  • Heteroepitaxial Beta-Ga 2 O 3 on 4H-SiC for an FET With Reduced Self Heating

    Stephen A. O. Russell;Amador Perez-Tomas;Christopher F. McConville;Craig A. Fisher

  • Bipolar self-doping in ultra-wide bandgap spinel ZnGa2O4

    Z. Chi;Fu-Gow Tarntair;M. Frégnaux;Wan-Yu Wu

  • $1.62\mu \mathrm{m}$ Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared

    Unknown

  • Above-Bandgap Photovoltages in Antiferroelectrics

    Amador Pérez-Tomás;Monica Lira-Cantú;Gustau Catalan

  • Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

    Amador Pérez‐Tomás

  • GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling

    A. Pérez-Tomás;M. Placidi;X. Perpiñà;A. Constant

  • Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC

    M. R. Jennings;Amador Pérez-Tomás;M. Davies;David Walker

Frequent Co-Authors

Monica Lira-Cantu
Monica Lira-Cantu Institut Català de Nanociència i Nanotecnologia
Gustau Catalan
Gustau Catalan Institut Català de Nanociència i Nanotecnologia
Alejandro Pérez-Rodríguez
Alejandro Pérez-Rodríguez University of Barcelona
Montserrat Nafría
Montserrat Nafría Autonomous University of Barcelona
Ana M. Sanchez
Ana M. Sanchez University of Warwick
Mario Lanza
Mario Lanza National University of Singapore
Victor Izquierdo-Roca
Victor Izquierdo-Roca Catalonia Energy Research Institute
Neil R. Wilson
Neil R. Wilson University of Warwick
T.P. Chow
T.P. Chow Rensselaer Polytechnic Institute
Anders Hagfeldt
Anders Hagfeldt Uppsala University

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