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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
6169
World Ranking
5950
National Ranking
118

Overview

Amador Pérez-Tomás is affiliated with the Institute of Microelectronics of Barcelona in Spain. Their research primarily focuses on the study and development of materials within the fields of Materials Science and Engineering.

Their work spans several subfields, including:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Biomedical Engineering

The main topics explored by Pérez-Tomás include:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • Advanced Photocatalysis Techniques
  • Semiconductor materials and devices
  • Electronic and Structural Properties of Oxides
  • Ferroelectric and Piezoelectric Materials
  • Acoustic Wave Resonator Technologies

Pérez-Tomás has contributed to various publication venues, with a particular presence in:

  • Materials Today Physics
  • Advanced Electronic Materials
  • Materials
  • Journal of Alloys and Compounds
  • SSRN Electronic Journal

Frequent co-authors in Pérez-Tomás's research include:

  • E. Chikoidze
  • Zeyu Chi
  • Yves Dumont
  • Corinne Sartel
  • Vincent Sallet

Significant recent papers authored or co-authored by Pérez-Tomás showcase the breadth of their research interests:

  • p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics, 2020, Crystal Growth & Design
  • Origin of large negative electrocaloric effect in antiferroelectric PbZrO3, 2021, Physical Review. B
  • Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation, 2022, Materials
  • Bipolar self-doping in ultra-wide bandgap spinel ZnGa2O4, 2021, Materials Today Physics
  • Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3, 2020, Materials Today Physics

Best Publications

  • A Survey of Wide Bandgap Power Semiconductor Devices

    Jose Millan;Philippe Godignon;Xavier Perpina;Amador Perez-Tomas

  • P-type β-gallium oxide: A new perspective for power and optoelectronic devices

    Ekaterine Chikoidze;Adel Fellous;Amador Perez-Tomas;Guillaume Sauthier

  • Inhibiting the absorber/Mo-back contact decomposition reaction in Cu2ZnSnSe4 solar cells: the role of a ZnO intermediate nanolayer

    Simón López-Marino;Marcel Placidi;Amador Pérez-Tomás;Jordi Llobet

  • Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors

    Amador Pérez-Tomás;P. Brosselard;P. Godignon;J. Millan

  • Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes

    R. Perez;D. Tournier;A. Perez-Tomas;P. Godignon

  • p-Type Ultrawide-Band-Gap Spinel ZnGa2O4 : New Perspectives for Energy Electronics

    Ekaterine Chikoidze;Corinne Sartel;Ismail Madaci;Hagar Mohamed

  • Modelling the inhomogeneous SiC Schottky interface

    P. M. Gammon;Amador Pérez-Tomás;V. A. Shah;O. Vavasour

  • GaN transistor characteristics at elevated temperatures

    A. Pérez-Tomás;M. Placidi;N. Baron;S. Chenot

  • Characterization and modeling of n-n Si∕SiC heterojunction diodes

    Amador Pérez-Tomás;M. R. Jennings;M. C. Davis;James A. Covington

  • Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor

    Ekaterine Chikoidze;Corinne Sartel;Hagar Mohamed;Ismail Madaci

  • Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

    A. Pérez-Tomás;A. Fontserè;J. Llobet;M. Placidi

  • A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface

    A. Pérez-Tomás;P. Godignon;N. Mestres;J. Millán

  • Metal Oxides in Photovoltaics: All-Oxide, Ferroic, and Perovskite Solar Cells

    Amador Pérez-Tomás;Alba Mingorance;David M. Tanenbaum;Mónica Lira-Cantú

  • Origin of large negative electrocaloric effect in antiferroelectric PbZr O 3

    Pablo Vales-Castro;Romain Faye;Miquel Vellvehi;Youri Nouchokgwe

  • Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

    A. Fontserè;Amador Pérez-Tomás;M. Placidi;J. Llobet

  • Heteroepitaxial Beta-Ga 2 O 3 on 4H-SiC for an FET With Reduced Self Heating

    Stephen A. O. Russell;Amador Perez-Tomas;Christopher F. McConville;Craig A. Fisher

  • Bipolar self-doping in ultra-wide bandgap spinel ZnGa2O4

    Z. Chi;Fu-Gow Tarntair;M. Frégnaux;Wan-Yu Wu

  • $1.62\mu \mathrm{m}$ Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared

    Unknown

  • Above-Bandgap Photovoltages in Antiferroelectrics

    Amador Pérez-Tomás;Monica Lira-Cantú;Gustau Catalan

  • Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

    Amador Pérez‐Tomás

  • GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling

    A. Pérez-Tomás;M. Placidi;X. Perpiñà;A. Constant

  • Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC

    M. R. Jennings;Amador Pérez-Tomás;M. Davies;David Walker

Frequent Co-Authors

Gustau Catalan
Gustau Catalan Institut Català de Nanociència i Nanotecnologia
Alejandro Pérez-Rodríguez
Alejandro Pérez-Rodríguez University of Barcelona
Montserrat Nafría
Montserrat Nafría Autonomous University of Barcelona
Ana M. Sanchez
Ana M. Sanchez University of Warwick
Victor Izquierdo-Roca
Victor Izquierdo-Roca Catalonia Energy Research Institute
Mario Lanza
Mario Lanza National University of Singapore
T.P. Chow
T.P. Chow Rensselaer Polytechnic Institute
Neil R. Wilson
Neil R. Wilson University of Warwick
Shaik M. Zakeeruddin
Shaik M. Zakeeruddin École Polytechnique Fédérale de Lausanne
Anders Hagfeldt
Anders Hagfeldt Uppsala University

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