World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
4937
World Ranking
5587
National Ranking
237

Alberto Castellazzi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Alberto Castellazzi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 302 publications — 58th percentile

58% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Alberto Castellazzi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Alberto Castellazzi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 35 D-Index — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Alberto Castellazzi is affiliated with Kyoto University of Advanced Science in Japan. Their research work is situated primarily within the field of Engineering, with a focus on Electrical and Electronic Engineering. Their contributions extend into subfields including Mechanical Engineering, Biomedical Engineering, Condensed Matter Physics, and Automotive Engineering.

The scientist's research topics cover a range of specialized areas including:

  • Silicon Carbide Semiconductor Technologies
  • Multilevel Inverters and Converters
  • Advanced DC-DC Converters
  • Electromagnetic Compatibility and Noise Suppression
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Electric Motor Design and Analysis

Alberto Castellazzi has contributed to several recent papers, reflecting expertise in power electronics and semiconductor device technology. Some notable publications include:

  • "Numerical Simulation and Analytical Modeling of the Thermal Behavior of Single- and Double-Sided Cooled Power Modules," 2020, IEEE Transactions on Components Packaging and Manufacturing Technology
  • "Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics," 2021, Energies
  • "Combined experimental-FEM investigation of electrical ruggedness in double-sided cooled power modules," 2020, Microelectronics Reliability
  • "Gate-damage accumulation and off-line recovery in SiC power MOSFETs with soft short-circuit failure mode," 2020, Microelectronics Reliability
  • "Study of Dual Active Bridge With Modified Modulation Techniques for Reduced Link Current Peak Stress and Harmonics Losses in Magnetics," 2020, IEEE Transactions on Industry Applications

The venues where Alberto Castellazzi frequently publishes include:

  • Microelectronics Reliability
  • Energies
  • Electronics
  • 2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)
  • 2021 24th International Conference on Electrical Machines and Systems (ICEMS)

Collaborative efforts are evident with frequent co-authors such as Andrea Irace, Antonio Pio Catalano, Ciro Scognamillo, Vincenzo d'Alessandro, and Michele Riccio. This collaborative network supports interdisciplinary approaches within the power electronics and semiconductor technology fields.

Best Publications

  • Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs

    Emre Gurpinar;Alberto Castellazzi

  • A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

    Gianpaolo Romano;Asad Fayyaz;Michele Riccio;Luca Maresca

  • Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

    Saeed Safari;Alberto Castellazzi;Patrick Wheeler

  • Performance Evaluation of a Three-Level ANPC Photovoltaic Grid-Connected Inverter With 650-V SiC Devices and Optimized PWM

    Davide Barater;Carlo Concari;Giampaolo Buticchi;Emre Gurpinar

  • SiC power MOSFETs performance, robustness and technology maturity

    Alberto Castellazzi;Asad Fayyaz;G. Romano;Li Yang

  • New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions

    Davide Barlini;Mauro Ciappa;Alberto Castellazzi;Michel Mermet-Guyennet

  • Electrothermal simulation of multichip-modules with novel transient thermal model and time-dependent boundary conditions

    Y.C. Gerstenmaier;A. Castellazzi;G.K.M. Wachutka

  • A Physics-Based Compact Model of SiC Power MOSFETs

    Rainer Kraus;Alberto Castellazzi

  • Short-circuit failure mechanism of SiC power MOSFETs

    G. Romano;L. Maresca;M. Riccio;V. d'Alessandro

  • Reliability analysis and modeling of power MOSFETs in the 42-V-PowerNet

    A. Castellazzi;Y.C. Gerstenmaier;R. Kraus;G.K.M. Wachutka

  • A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

    Jianfeng Li;Alberto Castellazzi;Mohd Amir Eleffendi;Emre Gurpinar

  • Automated Fast Extraction of Compact Thermal Models for Power Electronic Modules

    P. L. Evans;A. Castellazzi;C. M. Johnson

  • Short-circuit robustness of SiC Power MOSFETs: Experimental analysis

    Alberto Castellazzi;Asad Fayyaz;Li Yang;Michele Riccio

  • Transient robustness testing of silicon carbide (SiC) power MOSFETs

    Asad Fayyaz;Li Yang;Alberto Castellazzi

  • Design of Low-Inductance Switching Power Cell for GaN HEMT Based Inverter

    Emre Gurpinar;Francesco Iannuzzo;Yongheng Yang;Alberto Castellazzi

  • Experimental analysis of electro-thermal instability in SiC Power MOSFETs

    Michele Riccio;Alberto Castellazzi;G. De Falco;Andrea Irace

  • Thermal instability effects in SiC Power MOSFETs

    Alberto Castellazzi;Tsuyoshi Funaki;Tsunenobu Kimoto;Takashi Hikihara

  • High temperature gate-bias and reverse-bias tests on SiC MOSFETs

    Li Yang;Alberto Castellazzi

  • Statistical Analysis of the Electrothermal Imbalances of Mismatched Parallel SiC Power MOSFETs

    Alessandro Borghese;Michele Riccio;Asad Fayyaz;Alberto Castellazzi

  • UIS failure mechanism of SiC power MOSFETs

    Asad Fayyaz;Alberto Castellazzi;Gianpaolo Romano;Michele Riccio

  • An all SiC MOSFET high performance PV converter cell

    Dipankar De;Alberto Castellazzi;Adane Solomon;Andrew Trentin

Frequent Co-Authors

Patrick Wheeler
Patrick Wheeler University of Nottingham
Pericle Zanchetta
Pericle Zanchetta University of Nottingham
Takashi Hikihara
Takashi Hikihara Kyoto University
Jon Clare
Jon Clare University of Nottingham
Vincenzo d'Alessandro
Vincenzo d'Alessandro Polytechnic University of Turin
Giampaolo Buticchi
Giampaolo Buticchi University of Nottingham Ningbo China
Florin Udrea
Florin Udrea University of Cambridge
Frede Blaabjerg
Frede Blaabjerg Aalborg University
Tsunenobu Kimoto
Tsunenobu Kimoto Kyoto University

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Related Online Degrees & Career Pathways

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Exploring these diverse educational and career pathways can help students and professionals tailor their journey in Electronics and Electrical Engineering to their personal goals and lifestyles.

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