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Electronics and Electrical Engineering

D-Index
35
Citations
4937
World Ranking
5587
National Ranking
237

Overview

Alberto Castellazzi is affiliated with Kyoto University of Advanced Science in Japan. Their research work is situated primarily within the field of Engineering, with a focus on Electrical and Electronic Engineering. Their contributions extend into subfields including Mechanical Engineering, Biomedical Engineering, Condensed Matter Physics, and Automotive Engineering.

The scientist's research topics cover a range of specialized areas including:

  • Silicon Carbide Semiconductor Technologies
  • Multilevel Inverters and Converters
  • Advanced DC-DC Converters
  • Electromagnetic Compatibility and Noise Suppression
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Electric Motor Design and Analysis

Alberto Castellazzi has contributed to several recent papers, reflecting expertise in power electronics and semiconductor device technology. Some notable publications include:

  • "Numerical Simulation and Analytical Modeling of the Thermal Behavior of Single- and Double-Sided Cooled Power Modules," 2020, IEEE Transactions on Components Packaging and Manufacturing Technology
  • "Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics," 2021, Energies
  • "Combined experimental-FEM investigation of electrical ruggedness in double-sided cooled power modules," 2020, Microelectronics Reliability
  • "Gate-damage accumulation and off-line recovery in SiC power MOSFETs with soft short-circuit failure mode," 2020, Microelectronics Reliability
  • "Study of Dual Active Bridge With Modified Modulation Techniques for Reduced Link Current Peak Stress and Harmonics Losses in Magnetics," 2020, IEEE Transactions on Industry Applications

The venues where Alberto Castellazzi frequently publishes include:

  • Microelectronics Reliability
  • Energies
  • Electronics
  • 2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)
  • 2021 24th International Conference on Electrical Machines and Systems (ICEMS)

Collaborative efforts are evident with frequent co-authors such as Andrea Irace, Antonio Pio Catalano, Ciro Scognamillo, Vincenzo d'Alessandro, and Michele Riccio. This collaborative network supports interdisciplinary approaches within the power electronics and semiconductor technology fields.

Best Publications

  • Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs

    Emre Gurpinar;Alberto Castellazzi

  • A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

    Gianpaolo Romano;Asad Fayyaz;Michele Riccio;Luca Maresca

  • Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

    Saeed Safari;Alberto Castellazzi;Patrick Wheeler

  • Performance Evaluation of a Three-Level ANPC Photovoltaic Grid-Connected Inverter With 650-V SiC Devices and Optimized PWM

    Davide Barater;Carlo Concari;Giampaolo Buticchi;Emre Gurpinar

  • SiC power MOSFETs performance, robustness and technology maturity

    Alberto Castellazzi;Asad Fayyaz;G. Romano;Li Yang

  • New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions

    Davide Barlini;Mauro Ciappa;Alberto Castellazzi;Michel Mermet-Guyennet

  • Electrothermal simulation of multichip-modules with novel transient thermal model and time-dependent boundary conditions

    Y.C. Gerstenmaier;A. Castellazzi;G.K.M. Wachutka

  • A Physics-Based Compact Model of SiC Power MOSFETs

    Rainer Kraus;Alberto Castellazzi

  • Short-circuit failure mechanism of SiC power MOSFETs

    G. Romano;L. Maresca;M. Riccio;V. d'Alessandro

  • Reliability analysis and modeling of power MOSFETs in the 42-V-PowerNet

    A. Castellazzi;Y.C. Gerstenmaier;R. Kraus;G.K.M. Wachutka

  • A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

    Jianfeng Li;Alberto Castellazzi;Mohd Amir Eleffendi;Emre Gurpinar

  • Automated Fast Extraction of Compact Thermal Models for Power Electronic Modules

    P. L. Evans;A. Castellazzi;C. M. Johnson

  • Short-circuit robustness of SiC Power MOSFETs: Experimental analysis

    Alberto Castellazzi;Asad Fayyaz;Li Yang;Michele Riccio

  • Transient robustness testing of silicon carbide (SiC) power MOSFETs

    Asad Fayyaz;Li Yang;Alberto Castellazzi

  • Design of Low-Inductance Switching Power Cell for GaN HEMT Based Inverter

    Emre Gurpinar;Francesco Iannuzzo;Yongheng Yang;Alberto Castellazzi

  • Experimental analysis of electro-thermal instability in SiC Power MOSFETs

    Michele Riccio;Alberto Castellazzi;G. De Falco;Andrea Irace

  • Thermal instability effects in SiC Power MOSFETs

    Alberto Castellazzi;Tsuyoshi Funaki;Tsunenobu Kimoto;Takashi Hikihara

  • High temperature gate-bias and reverse-bias tests on SiC MOSFETs

    Li Yang;Alberto Castellazzi

  • Statistical Analysis of the Electrothermal Imbalances of Mismatched Parallel SiC Power MOSFETs

    Alessandro Borghese;Michele Riccio;Asad Fayyaz;Alberto Castellazzi

  • UIS failure mechanism of SiC power MOSFETs

    Asad Fayyaz;Alberto Castellazzi;Gianpaolo Romano;Michele Riccio

  • An all SiC MOSFET high performance PV converter cell

    Dipankar De;Alberto Castellazzi;Adane Solomon;Andrew Trentin

Frequent Co-Authors

Patrick Wheeler
Patrick Wheeler University of Nottingham
Pericle Zanchetta
Pericle Zanchetta University of Nottingham
Takashi Hikihara
Takashi Hikihara Kyoto University
Jon Clare
Jon Clare University of Nottingham
Florin Udrea
Florin Udrea University of Cambridge
Giampaolo Buticchi
Giampaolo Buticchi University of Nottingham Ningbo China
Yongheng Yang
Yongheng Yang Zhejiang University
Frede Blaabjerg
Frede Blaabjerg Aalborg University
Tsunenobu Kimoto
Tsunenobu Kimoto Kyoto University

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