2018 - IEEE Fellow For development of materials and packaging technologies for power electronics modules
The scientist’s investigation covers issues in Composite material, Sintering, Electronic packaging, Soldering and Metallurgy. His work on Microstructure, Thermal conductivity, Ultimate tensile strength and Semiconductor device as part of his general Composite material study is frequently connected to Lattice diffusion coefficient, thereby bridging the divide between different branches of science. His Microstructure research includes themes of Porosity, Nanoelectronics, Semiconductor and Nanomaterials.
His studies deal with areas such as Nanoparticle, Scanning electron microscope, Elastic modulus, Die and Substrate as well as Sintering. His Electronic packaging research is multidisciplinary, incorporating elements of Silicon carbide, Power module and Power electronics. His Copper, Aluminium, Recrystallization and Ceramic study in the realm of Metallurgy interacts with subjects such as dBc.
His scientific interests lie mostly in Composite material, Sintering, Metallurgy, Microstructure and Power module. His work on Soldering, Electronic packaging, Shear strength and Stress as part of general Composite material research is frequently linked to Permeability, thereby connecting diverse disciplines of science. His work carried out in the field of Sintering brings together such families of science as Nanoparticle, Scanning electron microscope, Die, Thermal resistance and Substrate.
His work is dedicated to discovering how Metallurgy, Silver nanoparticle are connected with Metallic bonding and other disciplines. His Microstructure research is multidisciplinary, incorporating perspectives in Porosity, Delamination and Grain size. The various areas that he examines in his Power module study include Optoelectronics, Insulated-gate bipolar transistor, Electronic engineering, Electrical engineering and Junction temperature.
Guo-Quan Lu focuses on Composite material, Sintering, Optoelectronics, Inductance and Power module. His Composite material research incorporates elements of Metallic bonding and Copper. His Sintering research entails a greater understanding of Metallurgy.
His work deals with themes such as Junction temperature, Die and Interposer, which intersect with Optoelectronics. Guo-Quan Lu interconnects Power semiconductor device, MOSFET, Power density and Insulated-gate bipolar transistor in the investigation of issues within Power module. Guo-Quan Lu studied Thermal resistance and Substrate that intersect with Die.
His primary areas of study are Composite material, Sintering, Permeability, Inductance and Inductor. His Composite material study combines topics from a wide range of disciplines, such as Metallic bonding and Copper. His study in Sintering is interdisciplinary in nature, drawing from both Microstructure, Grain boundary, Scanning electron microscope, Insulated-gate bipolar transistor and Thermal resistance.
The various areas that Guo-Quan Lu examines in his Microstructure study include Die, Power module, Grain size and Nickel. His studies deal with areas such as Plating, Nanoparticle, Surface force, Nano- and Metallurgy as well as Thermal resistance. His biological study deals with issues like Electromagnetic coil, which deal with fields such as Magnetic flux.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Low-Temperature Sintered Nanoscale Silver as a Novel Semiconductor Device-Metallized Substrate Interconnect Material
J.G. Bai;Zhiye Zach Zhang;J.N. Calata;Guo-Quan Lu.
IEEE Transactions on Components and Packaging Technologies (2006)
Low-Temperature Sintering with Nano-Silver Paste in Die-Attached Interconnection
Tao Wang;Xu Chen;Guo-Quan Lu;Guang-Yin Lei.
Journal of Electronic Materials (2007)
Pressure-assisted low-temperature sintering of silver paste as an alternative die-attach solution to solder reflow
Z. Zhang;Guo-Quan Lu.
IEEE Transactions on Electronics Packaging Manufacturing (2002)
Thermomechanical Reliability of Low-Temperature Sintered Silver Die Attached SiC Power Device Assembly
J.G. Bai;Guo-Quan Lu.
IEEE Transactions on Device and Materials Reliability (2006)
The Activation Strain Tensor: Nonhydrostatic Stress Effects on Crystal-Growth Kinetics
Michael J. Aziz;Paul C. Sabin;Guo-Quan Lu.
Physical Review B (1991)
Pressure‐enhanced crystallization kinetics of amorphous Si and Ge: Implications for point‐defect mechanisms
Guo‐Quan Lu;Eric Nygren;Michael J. Aziz.
Journal of Applied Physics (1991)
Low-Temperature Sintering of Nanoscale Silver Paste for Attaching Large-Area $({>}100~{ m mm}^{2})$ Chips
T.G. Lei;J.N. Calata;Guo-Quan Lu;Xu Chen.
IEEE Transactions on Components and Packaging Technologies (2010)
High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment
J. Guofeng Bai;Jian Yin;Zhiye Zhang;Guo-Quan Lu.
IEEE Transactions on Advanced Packaging (2007)
Nanoscale metal paste for interconnect and method of use
Guo-Quan Lu;Guangyin Lei;Jesus N. Calata.
(2005)
Applying Anand model to low-temperature sintered nanoscale silver paste chip attachment
Dun-ji Yu;Xu Chen;Gang Chen;Guo-quan Lu.
Materials & Design (2009)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:
Virginia Tech
Tianjin University
Virginia Tech
Virginia Tech
Novel Crystal Technology, Inc
Harvard University
University of Johannesburg
Virginia Tech
University of Tennessee at Knoxville
Virginia Tech
IBM (United States)
Utrecht University
University of Porto
University of Zurich
Goethe University Frankfurt
University of Hawaii at Hilo
Colorado State University
University of California, Davis
Hungarian Academy of Sciences
Lund University
Washington State University
Harvard University
Kaiser Permanente
Imperial College London
Finnish Institute for Health and Welfare (THL)
King's College London