World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
51
Citations
13924
World Ranking
2602
National Ranking
89

Kohei Sasaki publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Kohei Sasaki sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 195 publications — 28th percentile

28% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Kohei Sasaki D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Kohei Sasaki sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 51 D-Index — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Kohei Sasaki is affiliated with Novel Crystal Technology, Inc in Japan. Their research focuses extensively on materials science, with significant contributions to materials chemistry and electronic, optical, and magnetic materials. Their work also intersects with renewable energy, sustainability, electrical and electronic engineering, and condensed matter physics.

The scientist's main topics of study include:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • Electronic and structural properties of oxides
  • Advanced photocatalysis techniques
  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Perovskite materials and applications

Kohei Sasaki has contributed to numerous publications in various scientific venues. The most frequent publication venues for their work are:

  • Applied Physics Letters (14 publications)
  • Applied Physics Express (9 publications)
  • Japanese Journal of Applied Physics (8 publications)
  • Journal of Applied Physics (5 publications)
  • APL Materials (3 publications)

Their recent papers include:

  • β-Gallium oxide power electronics, 2022, APL Materials
  • Packaged Ga2O3 Schottky Rectifiers With Over 60-A Surge Current Capability, 2021, IEEE Transactions on Power Electronics
  • Recent progress of Ga2O3 power technology: large-area devices, packaging and applications, 2023, Japanese Journal of Applied Physics
  • 2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension, 2022, IEEE Electron Device Letters
  • Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio, 2021, Applied Physics Express

The frequent co-authors collaborating with Kohei Sasaki include:

  • Akito Kuramata (42 collaborations)
  • Yuhao Zhang (11 collaborations)
  • Makoto Kasu (11 collaborations)
  • Yongzhao Yao (11 collaborations)
  • Marko J. Tadjer (10 collaborations)

Best Publications

  • Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

    Masataka Higashiwaki;Kohei Sasaki;Akito Kuramata;Takekazu Masui

  • Recent progress in Ga2O3 power devices

    Masataka Higashiwaki;Kohei Sasaki;Hisashi Murakami;Yoshinao Kumagai

  • Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

    Masataka Higashiwaki;Kohei Sasaki;Takafumi Kamimura;Man Hoi Wong

  • Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

    Kohei Sasaki;Akito Kuramata;Takekazu Masui;Encarnación G. Víllora

  • Development of gallium oxide power devices

    Masataka Higashiwaki;Kohei Sasaki;Akito Kuramata;Takekazu Masui

  • $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $eta$ – $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

    K. Sasaki;M. Higashiwaki;A. Kuramata;T. Masui

  • Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

    Masataka Higashiwaki;Keita Konishi;Kohei Sasaki;Ken Goto

  • Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals

    T. Onuma;S. Fujioka;T. Yamaguchi;M. Higashiwaki

  • Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts

    Kohei Sasaki;Masataka Higashiwaki;Akito Kuramata;Takekazu Masui

  • MBE grown Ga2O3 and its power device applications

    Kohei Sasaki;Masataka Higashiwaki;Masataka Higashiwaki;Akito Kuramata;Takekazu Masui

  • Enhancement-Mode Ga 2 O 3 Vertical Transistors With Breakdown Voltage >1 kV

    Zongyang Hu;Kazuki Nomoto;Wenshen Li;Nicholas Tanen

  • First Demonstration of Ga 2 O 3 Trench MOS-Type Schottky Barrier Diodes

    Kohei Sasaki;Daiki Wakimoto;Quang Tu Thieu;Yuki Koishikawa

  • Recessed-Gate Enhancement-Mode $eta $ -Ga2O3 MOSFETs

    Kelson D. Chabak;Jonathan P. McCandless;Neil A. Moser;Andrew J. Green

  • Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

    Takafumi Kamimura;Kohei Sasaki;Man Hoi Wong;Daivasigamani Krishnamurthy

  • Vertical Ga 2 O 3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm 2

    Noah Allen;Ming Xiao;Xiaodong Yan;Kohei Sasaki

  • Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy

    Hironori Okumura;Masao Kita;Kohei Sasaki;Akito Kuramata

  • Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

    Zongyang Hu;Kazuki Nomoto;Wenshen Li;Zexuan Zhang

  • Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy

    Kohei Sasaki;Masataka Higashiwaki;Akito Kuramata;Takekazu Masui

  • 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2

    Wenshen Li;Zongyang Hu;Kazuki Nomoto;Zexuan Zhang

  • Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer

    Man Hoi Wong;Kohei Sasaki;Akito Kuramata;Shigenobu Yamakoshi

Frequent Co-Authors

Akito Kuramata
Akito Kuramata Novel Crystal Technology, Inc
Masataka Higashiwaki
Masataka Higashiwaki Osaka Metropolitan University
Shigenobu Yamakoshi
Shigenobu Yamakoshi Fujitsu (Japan)
Man Hoi Wong
Man Hoi Wong Hong Kong University of Science and Technology
Makoto Kasu
Makoto Kasu Saga University
Yoshinao Kumagai
Yoshinao Kumagai Tokyo University of Agriculture and Technology
Akira Ohtomo
Akira Ohtomo Tokyo Institute of Technology
Yoshiaki Nakata
Yoshiaki Nakata University of Tokyo
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
Bo Monemar
Bo Monemar Linköping University

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