World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
51
Citations
13924
World Ranking
2602
National Ranking
89

Overview

Kohei Sasaki is affiliated with Novel Crystal Technology, Inc in Japan. Their research focuses extensively on materials science, with significant contributions to materials chemistry and electronic, optical, and magnetic materials. Their work also intersects with renewable energy, sustainability, electrical and electronic engineering, and condensed matter physics.

The scientist's main topics of study include:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • Electronic and structural properties of oxides
  • Advanced photocatalysis techniques
  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Perovskite materials and applications

Kohei Sasaki has contributed to numerous publications in various scientific venues. The most frequent publication venues for their work are:

  • Applied Physics Letters (14 publications)
  • Applied Physics Express (9 publications)
  • Japanese Journal of Applied Physics (8 publications)
  • Journal of Applied Physics (5 publications)
  • APL Materials (3 publications)

Their recent papers include:

  • β-Gallium oxide power electronics, 2022, APL Materials
  • Packaged Ga2O3 Schottky Rectifiers With Over 60-A Surge Current Capability, 2021, IEEE Transactions on Power Electronics
  • Recent progress of Ga2O3 power technology: large-area devices, packaging and applications, 2023, Japanese Journal of Applied Physics
  • 2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension, 2022, IEEE Electron Device Letters
  • Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio, 2021, Applied Physics Express

The frequent co-authors collaborating with Kohei Sasaki include:

  • Akito Kuramata (42 collaborations)
  • Yuhao Zhang (11 collaborations)
  • Makoto Kasu (11 collaborations)
  • Yongzhao Yao (11 collaborations)
  • Marko J. Tadjer (10 collaborations)

Best Publications

  • Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

    Masataka Higashiwaki;Kohei Sasaki;Akito Kuramata;Takekazu Masui

  • Recent progress in Ga2O3 power devices

    Masataka Higashiwaki;Kohei Sasaki;Hisashi Murakami;Yoshinao Kumagai

  • Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

    Masataka Higashiwaki;Kohei Sasaki;Takafumi Kamimura;Man Hoi Wong

  • Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

    Kohei Sasaki;Akito Kuramata;Takekazu Masui;Encarnación G. Víllora

  • Development of gallium oxide power devices

    Masataka Higashiwaki;Kohei Sasaki;Akito Kuramata;Takekazu Masui

  • $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $eta$ – $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

    K. Sasaki;M. Higashiwaki;A. Kuramata;T. Masui

  • Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

    Masataka Higashiwaki;Keita Konishi;Kohei Sasaki;Ken Goto

  • Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals

    T. Onuma;S. Fujioka;T. Yamaguchi;M. Higashiwaki

  • Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts

    Kohei Sasaki;Masataka Higashiwaki;Akito Kuramata;Takekazu Masui

  • MBE grown Ga2O3 and its power device applications

    Kohei Sasaki;Masataka Higashiwaki;Masataka Higashiwaki;Akito Kuramata;Takekazu Masui

  • Enhancement-Mode Ga 2 O 3 Vertical Transistors With Breakdown Voltage >1 kV

    Zongyang Hu;Kazuki Nomoto;Wenshen Li;Nicholas Tanen

  • First Demonstration of Ga 2 O 3 Trench MOS-Type Schottky Barrier Diodes

    Kohei Sasaki;Daiki Wakimoto;Quang Tu Thieu;Yuki Koishikawa

  • Recessed-Gate Enhancement-Mode $eta $ -Ga2O3 MOSFETs

    Kelson D. Chabak;Jonathan P. McCandless;Neil A. Moser;Andrew J. Green

  • Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

    Takafumi Kamimura;Kohei Sasaki;Man Hoi Wong;Daivasigamani Krishnamurthy

  • Vertical Ga 2 O 3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm 2

    Noah Allen;Ming Xiao;Xiaodong Yan;Kohei Sasaki

  • Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy

    Hironori Okumura;Masao Kita;Kohei Sasaki;Akito Kuramata

  • Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

    Zongyang Hu;Kazuki Nomoto;Wenshen Li;Zexuan Zhang

  • Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy

    Kohei Sasaki;Masataka Higashiwaki;Akito Kuramata;Takekazu Masui

  • 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2

    Wenshen Li;Zongyang Hu;Kazuki Nomoto;Zexuan Zhang

  • Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer

    Man Hoi Wong;Kohei Sasaki;Akito Kuramata;Shigenobu Yamakoshi

Frequent Co-Authors

Akito Kuramata
Akito Kuramata Novel Crystal Technology, Inc
Masataka Higashiwaki
Masataka Higashiwaki Osaka Metropolitan University
Shigenobu Yamakoshi
Shigenobu Yamakoshi Fujitsu (Japan)
Man Hoi Wong
Man Hoi Wong Hong Kong University of Science and Technology
Makoto Kasu
Makoto Kasu Saga University
Yoshinao Kumagai
Yoshinao Kumagai Tokyo University of Agriculture and Technology
Akira Ohtomo
Akira Ohtomo Tokyo Institute of Technology
Yoshiaki Nakata
Yoshiaki Nakata University of Tokyo
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
Bo Monemar
Bo Monemar Linköping University

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