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Kohei Sasaki

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 51 2602 2495 89 83 195 13924

Kohei Sasaki publications per year

The chart shows the history of publications by Kohei Sasaki between 1997 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Kohei Sasaki published across 29 years, from 1997 to 2025, averaging 10.1 papers a year. Output peaked at 35 publications in 2016. 18 of the 293 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1997 to 2025. Vertical axis: number of publications, 0 to 35. Peak 35 publications in 2016. 1997: 2 publications 1998: 0 publications 1999: 0 publications 2000: 1 publication 2001: 0 publications 2002: 0 publications 2003: 0 publications 2004: 0 publications 2005: 0 publications 2006: 0 publications 2007: 1 publication 2008: 2 publications 2009: 3 publications 2010: 5 publications 2011: 6 publications 2012: 11 publications 2013: 19 publications 2014: 18 publications 2015: 14 publications 2016: 35 publications 2017: 28 publications 2018: 31 publications 2019: 21 publications 2020: 17 publications 2021: 24 publications 2022: 13 publications 2023: 24 publications 2024: 11 publications 2025: 7 publications
1997 2025

293 publications in total across all disciplines

View publications per year as a table
Kohei Sasaki: publications per year, 1997 to 2025
Year Publications
1997 2
1998 0
1999 0
2000 1
2001 0
2002 0
2003 0
2004 0
2005 0
2006 0
2007 1
2008 2
2009 3
2010 5
2011 6
2012 11
2013 19
2014 18
2015 14
2016 35
2017 28
2018 31
2019 21
2020 17
2021 24
2022 13
2023 24
2024 11
2025 7
Total 293
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Kohei Sasaki publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Kohei Sasaki sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 194–213 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 195 publications — 28th percentile

28% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430 195
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Kohei Sasaki D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Kohei Sasaki sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 51 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 51 D-Index — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156 51
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Kohei Sasaki is affiliated with Novel Crystal Technology, Inc in Japan. Their research focuses extensively on materials science, with significant contributions to materials chemistry and electronic, optical, and magnetic materials. Their work also intersects with renewable energy, sustainability, electrical and electronic engineering, and condensed matter physics.

The scientist's main topics of study include:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • Electronic and structural properties of oxides
  • Advanced photocatalysis techniques
  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Perovskite materials and applications

Kohei Sasaki has contributed to numerous publications in various scientific venues. The most frequent publication venues for their work are:

  • Applied Physics Letters (14 publications)
  • Applied Physics Express (9 publications)
  • Japanese Journal of Applied Physics (8 publications)
  • Journal of Applied Physics (5 publications)
  • APL Materials (3 publications)

Their recent papers include:

  • β-Gallium oxide power electronics, 2022, APL Materials
  • Packaged Ga2O3 Schottky Rectifiers With Over 60-A Surge Current Capability, 2021, IEEE Transactions on Power Electronics
  • Recent progress of Ga2O3 power technology: large-area devices, packaging and applications, 2023, Japanese Journal of Applied Physics
  • 2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension, 2022, IEEE Electron Device Letters
  • Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio, 2021, Applied Physics Express

The frequent co-authors collaborating with Kohei Sasaki include:

  • Akito Kuramata (42 collaborations)
  • Yuhao Zhang (11 collaborations)
  • Makoto Kasu (11 collaborations)
  • Yongzhao Yao (11 collaborations)
  • Marko J. Tadjer (10 collaborations)

Best Publications

  • Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

    Masataka Higashiwaki;Kohei Sasaki;Akito Kuramata;Takekazu Masui

  • Recent progress in Ga2O3 power devices

    Masataka Higashiwaki;Kohei Sasaki;Hisashi Murakami;Yoshinao Kumagai

  • Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

    Masataka Higashiwaki;Kohei Sasaki;Takafumi Kamimura;Man Hoi Wong

  • Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

    Kohei Sasaki;Akito Kuramata;Takekazu Masui;Encarnación G. Víllora

  • Development of gallium oxide power devices

    Masataka Higashiwaki;Kohei Sasaki;Akito Kuramata;Takekazu Masui

  • $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $eta$ – $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

    K. Sasaki;M. Higashiwaki;A. Kuramata;T. Masui

  • Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

    Masataka Higashiwaki;Keita Konishi;Kohei Sasaki;Ken Goto

  • Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals

    T. Onuma;S. Fujioka;T. Yamaguchi;M. Higashiwaki

  • Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts

    Kohei Sasaki;Masataka Higashiwaki;Akito Kuramata;Takekazu Masui

  • MBE grown Ga2O3 and its power device applications

    Kohei Sasaki;Masataka Higashiwaki;Masataka Higashiwaki;Akito Kuramata;Takekazu Masui

  • Enhancement-Mode Ga 2 O 3 Vertical Transistors With Breakdown Voltage >1 kV

    Zongyang Hu;Kazuki Nomoto;Wenshen Li;Nicholas Tanen

  • First Demonstration of Ga 2 O 3 Trench MOS-Type Schottky Barrier Diodes

    Kohei Sasaki;Daiki Wakimoto;Quang Tu Thieu;Yuki Koishikawa

  • Recessed-Gate Enhancement-Mode $eta $ -Ga2O3 MOSFETs

    Kelson D. Chabak;Jonathan P. McCandless;Neil A. Moser;Andrew J. Green

  • Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

    Takafumi Kamimura;Kohei Sasaki;Man Hoi Wong;Daivasigamani Krishnamurthy

  • Vertical Ga 2 O 3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm 2

    Noah Allen;Ming Xiao;Xiaodong Yan;Kohei Sasaki

  • Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy

    Hironori Okumura;Masao Kita;Kohei Sasaki;Akito Kuramata

  • Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

    Zongyang Hu;Kazuki Nomoto;Wenshen Li;Zexuan Zhang

  • Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy

    Kohei Sasaki;Masataka Higashiwaki;Akito Kuramata;Takekazu Masui

  • 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2

    Wenshen Li;Zongyang Hu;Kazuki Nomoto;Zexuan Zhang

  • Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer

    Man Hoi Wong;Kohei Sasaki;Akito Kuramata;Shigenobu Yamakoshi

Frequent Co-Authors

Akito Kuramata
Akito Kuramata Novel Crystal Technology, Inc
Masataka Higashiwaki
Masataka Higashiwaki Osaka Metropolitan University
Shigenobu Yamakoshi
Shigenobu Yamakoshi Fujitsu (Japan)
Man Hoi Wong
Man Hoi Wong Hong Kong University of Science and Technology
Makoto Kasu
Makoto Kasu Saga University
Yoshinao Kumagai
Yoshinao Kumagai Tokyo University of Agriculture and Technology
Akira Ohtomo
Akira Ohtomo Tokyo Institute of Technology
Yoshiaki Nakata
Yoshiaki Nakata University of Tokyo
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
Bo Monemar
Bo Monemar Linköping University

External Links

Personal website of Kohei Sasaki

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Best Scientists Citing Kohei Sasaki

Fan Ren

Fan Ren

University of Florida

Publications: 77

Akito Kuramata

Akito Kuramata

Novel Crystal Technology, Inc

Publications: 69

Yue Hao

Yue Hao

Xidian University

Publications: 59

Jincheng Zhang

Jincheng Zhang

Xidian University

Publications: 55

Stephen J. Pearton

Stephen J. Pearton

University of Florida

Publications: 55

Masataka Higashiwaki

Masataka Higashiwaki

Osaka Metropolitan University

Publications: 55

Sriram Krishnamoorthy

Sriram Krishnamoorthy

University of California, Santa Barbara

Publications: 52

Hong Zhou

Hong Zhou

Xidian University

Publications: 45

Marko J. Tadjer

Marko J. Tadjer

United States Naval Research Laboratory

Publications: 44

Siddharth Rajan

Siddharth Rajan

The Ohio State University

Publications: 44

Hongping Zhao

Hongping Zhao

The Ohio State University

Publications: 43

Ji Hyun Kim

Ji Hyun Kim

Seoul National University

Publications: 43

Marius Grundmann

Marius Grundmann

Leipzig University

Publications: 42

Yoshinao Kumagai

Yoshinao Kumagai

Tokyo University of Agriculture and Technology

Publications: 37

Weihua Tang

Weihua Tang

Nanjing University of Posts and Telecommunications

Publications: 36

James S. Speck

James S. Speck

University of California, Santa Barbara

Publications: 36

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